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1. 发明授权

US10757353B2 Photoelectric conversion apparatus and imaging system 有权
公开(公告)号：US10757353B2
公开(公告)日：2020-08-25
申请号：US15462589
申请日：2017-03-17
申请人： CANON KABUSHIKI KAISHA
发明人： Yojiro Matsuda , Hidekazu Takahashi , Kazuaki Tashiro
IPC分类号： H04N5/369 , H01L51/42 , H01G9/20 , H01L27/30 , H01L51/44 , H04N5/376 , H04N9/07
摘要： The present disclosure provides a photoelectric conversion apparatus which includes a semiconductor substrate, signal output units disposed on the semiconductor substrate, a plurality of photoelectric conversion layers disposed on a surface of the substrate, and an upper electrode in this order. The photoelectric conversion apparatus further includes insulation layers which are disposed between the plurality of photoelectric conversion layers and which have lines connected to power supply units. The upper electrode and the lines are electrically connected to each other on side surfaces of the insulation layers.

2. 发明授权

US10734422B2 Semiconductor apparatus having a reset transistor for resetting a potential in a semiconductor region 有权
公开(公告)号：US10734422B2
公开(公告)日：2020-08-04
申请号：US16241251
申请日：2019-01-07
申请人： CANON KABUSHIKI KAISHA
发明人： Tomoya Sasago , Kazuaki Tashiro
IPC分类号： H01L27/146 , H04N5/378 , H04N5/3745 , H04N5/374
摘要： There is provided a semiconductor apparatus including a first semiconductor region of a first conductive type in which a potential to be detected appears, a second semiconductor region of a second conductive type forming a p-n junction with the first semiconductor region, an amplification transistor including a gate to which the first semiconductor region is connected, and a reset transistor configured to reset a potential of the first semiconductor region. In the semiconductor apparatus, one of a source and a drain of the reset transistor is connected to the first semiconductor region, and the other one of the source and the drain of the reset transistor is connected to the second semiconductor region.

3. 发明申请

US20180019363A1 PHOTOELECTRIC CONVERSION DEVICE, IMAGING ELEMENT, AND IMAGING DEVICE 审中-公开
公开(公告)号：US20180019363A1
公开(公告)日：2018-01-18
申请号：US15647007
申请日：2017-07-11
申请人： CANON KABUSHIKI KAISHA
发明人： Tetsuo Takahashi , Hidekazu Takahashi , Naoki Yamada , Yojiro Matsuda , Masumi Itabashi , Hirokazu Miyashita , Kazuaki Tashiro
IPC分类号： H01L31/153 , H01L31/0232 , H01L31/0216 , H01L31/0224 , H01L33/38 , H01L31/102
CPC分类号： H01L31/153 , H01L31/02164 , H01L31/022408 , H01L31/02327 , H01L31/102 , H01L33/38
摘要： A device uses a light-emitting material. The device includes an upper and a lower electrode, a first photoelectric conversion portion disposed between the upper electrode and the lower electrode, a second photoelectric conversion portion, a first readout circuit connected to the first photoelectric conversion portion, and a second readout circuit connected to the second photoelectric conversion portion. The second photoelectric conversion portion converts light emitted from the light-emitting material into electrical charges.

4. 发明授权

US09571768B2 Photoelectric conversion device and imaging system 有权
标题翻译：光电转换装置及成像系统
公开(公告)号：US09571768B2
公开(公告)日：2017-02-14
申请号：US14794653
申请日：2015-07-08
申请人： CANON KABUSHIKI KAISHA
发明人： Kazuaki Tashiro , Noriyuki Kaifu , Hidekazu Takahashi
IPC分类号： H04N3/14 , H04N5/335 , H04N5/374 , H04N5/357 , H04N5/378 , H04N5/369 , H04N5/376 , H04N5/3745 , H04N5/355
CPC分类号： H04N5/363 , H04N5/355 , H04N5/35572 , H04N5/3559 , H04N5/357 , H04N5/3698 , H04N5/374 , H04N5/3741 , H04N5/37455 , H04N5/3765 , H04N5/378
摘要： A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit, a reset transistor, and an amplifier transistor that outputs a signal from the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode. The photoelectric conversion unit alternately performs an accumulation operation and a discharge operation in accordance with the voltage between the first electrode and the second electrode. In a period between two consecutive discharge operations among a plurality of discharge operations, a reset operation in which the reset transistor resets the voltage on the second electrode is performed a plurality of times.
摘要翻译：根据示例性实施例的光电转换装置包括包括光电转换单元，复位晶体管和输出来自光电转换单元的信号的放大器晶体管的像素。光电转换单元包括第一电极，第二电极，光电转换层和设置在光电转换层和第二电极之间的绝缘层。光电转换单元根据第一电极和第二电极之间的电压交替地执行累积操作和放电操作。在多个放电操作中的两个连续放电操作之间的时段中，执行复位晶体管复位第二电极上的电压的复位操作多次。

5. 发明申请

US20140333814A1 SOLID-STATE IMAGE SENSOR AND CAMERA 有权
标题翻译：固态图像传感器和摄像机
公开(公告)号：US20140333814A1
公开(公告)日：2014-11-13
申请号：US14255109
申请日：2014-04-17
申请人： CANON KABUSHIKI KAISHA
发明人： Kazuaki Tashiro
IPC分类号： H01L27/146 , H04N5/378
CPC分类号： H01L27/14621 , H01L27/14609 , H01L27/14641 , H01L27/14643 , H01L27/14645 , H01L27/14649 , H04N5/374 , H04N9/045
摘要： A solid-state image sensor includes a plurality of first pixels and a plurality of second pixels. Each of the plurality of first pixels includes a first filter having a visible light transmittance higher than an infrared light transmittance, and a first photoelectric converter configured to receive visible light transmitted through the first filter, and each of the plurality of second pixels includes a second filter having an infrared light transmittance higher than a visible light transmittance, and a second photoelectric converter configured to receive infrared light transmitted through the second filter. The plurality of second pixels are divided into a plurality of groups each includes at least two second pixels. The solid-state image sensor includes a synthesizer configured to synthesize a signal from signals of the at least two second pixels included in each group.
摘要翻译：固态图像传感器包括多个第一像素和多个第二像素。多个第一像素中的每一个包括具有比红外光透射率高的可见光透射率的第一滤光器，以及被配置为接收透过第一滤光器的可见光的第一光电转换器，并且多个第二像素中的每一个包括第二具有比可见光透射率高的红外光透射率的滤光器和被配置为接收透过第二滤光器的红外光的第二光电转换器。多个第二像素被分成多个组，每组包括至少两个第二像素。固态图像传感器包括合成器，被配置为从包括在每个组中的至少两个第二像素的信号合成信号。

6. 发明申请

US20130161701A1 IMAGE PICKUP DEVICE 有权
公开(公告)号：US20130161701A1
公开(公告)日：2013-06-27
申请号：US13725336
申请日：2012-12-21
申请人： CANON KABUSHIKI KAISHA
发明人： Kazuaki Tashiro , Shin Kikuchi
IPC分类号： H01L31/02
CPC分类号： H01L27/14603 , H01L27/14616 , H01L27/1463 , H01L29/66 , H01L31/02
摘要： An image pickup device according to the present invention is an image pickup device in which a plurality of pixel are arranged in a semiconductor substrate. Each of the plurality of pixels includes a photoelectric conversion element, a floating diffusion (FD) region, a transfer gate that transfers charges in the first semiconductor region to the FD region, and an amplification transistor whose gate is electrically connected to the FD region. The photoelectric conversion element has an outer edge which has a recessed portion in plan view, a source region and a drain region of the amplification transistor are located in the recessed portion, and the FD region is surrounded by the photoelectric conversion region or is located in the recessed portion in plan view.

7. 发明申请

US20180249104A1 PHOTOELECTRIC CONVERSION DEVICE, IMAGING SYSTEM, AND MOBILE APPARATUS 有权
公开(公告)号：US20180249104A1
公开(公告)日：2018-08-30
申请号：US15892889
申请日：2018-02-09
申请人： CANON KABUSHIKI KAISHA
发明人： Tomoya Sasago , Kazuaki Tashiro
IPC分类号： H04N5/355 , H01L27/146 , H04N5/3745 , G06T7/55
摘要： Provided is a photoelectric conversion device including: a pixel array including a plurality of pixels each including a first electrode, a second electrode, and a photoelectric conversion layer arranged between the first and second electrodes, in which the pixels include a first pixel having a first color filter and a second pixel having a second color filter different from the first color filter; a potential supply line that supplies an electric potential to the first electrodes of the first pixel and the second pixel; and control lines configured to supply different electric potentials to the second electrodes of the first pixel and the second pixel, respectively, to compensate a difference between a dependency of a sensitivity of the first pixel on a bias voltage applied to the photoelectric conversion layer and a dependency of a sensitivity of the second pixel on a bias voltage applied to the photoelectric conversion layer.

8. 发明授权

US10027915B2 Photoelectric conversion device and imaging system 有权
公开(公告)号：US10027915B2
公开(公告)日：2018-07-17
申请号：US14794695
申请日：2015-07-08
申请人： CANON KABUSHIKI KAISHA
发明人： Kazuaki Tashiro , Noriyuki Kaifu , Hidekazu Takahashi
IPC分类号： H01L31/062 , H04N5/3745 , H04N5/357 , H04N5/359 , H04N5/374 , H01L27/146
摘要： A photoelectric conversion device according to an exemplary embodiment includes a pixel which includes a photoelectric conversion unit and an amplifier transistor configured to output a signal generated by the photoelectric conversion unit. The photoelectric conversion unit includes a first electrode, a second electrode electrically connected to the amplifier transistor, a photoelectric conversion layer, and an insulating layer disposed between the photoelectric conversion layer and the second electrode. The photoelectric conversion layer includes quantum dots.

9. 发明申请

US20180184017A1 PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM 审中-公开
公开(公告)号：US20180184017A1
公开(公告)日：2018-06-28
申请号：US15845995
申请日：2017-12-18
申请人： CANON KABUSHIKI KAISHA
发明人： Kazuaki Tashiro
IPC分类号： H04N5/345 , H01L27/146 , H04N5/3745 , G01C3/08
摘要： A photoelectric conversion device includes a voltage control unit connected to a first node of a capacitive element and a transistor via the same piece of wiring and configured to output a plurality of voltages having different values to the same piece of wiring.

10. 发明申请

US20180151620A1 PHOTOELECTRIC CONVERSION APPARATUS AND PHOTOELECTRIC CONVERSION SYSTEM 审中-公开
公开(公告)号：US20180151620A1
公开(公告)日：2018-05-31
申请号：US15809899
申请日：2017-11-10
申请人： CANON KABUSHIKI KAISHA
发明人： Kazuaki Tashiro
IPC分类号： H01L27/146 , H04N5/3745 , H04N5/378
CPC分类号： H01L27/14667 , H01L27/14621 , H01L27/14627 , H01L27/14636 , H01L31/03762 , H04N5/374 , H04N5/37457 , H04N5/378
摘要： A photoelectric conversion apparatus includes a plurality of pixels including a pixel electrode having a first electrode and a second electrode, an upper electrode, a photoelectric conversion layer, a first signal output circuit, and a second signal output circuit, and a control unit. During a first period in which the first signal output circuit outputs a signal, the second electrode collects signal charges.

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