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1. 发明授权

US10937822B2 Photoelectric conversion device and manufacturing method of the photoelectric conversion device 有权
公开(公告)号：US10937822B2
公开(公告)日：2021-03-02
申请号：US16286284
申请日：2019-02-26
申请人： CANON KABUSHIKI KAISHA
发明人： Mineo Shimotsusa , Masatsugu Itahashi , Yusuke Onuki , Nobuaki Kakinuma , Masato Fujita
IPC分类号： H01L27/146
摘要： A manufacturing method includes a first process for forming a first gate electrode for a first MOS transistor and a second gate electrode for a second MOS transistor on a substrate including a semiconductor region defined by an insulator region for element isolation, a second process for masking a portion located above the semiconductor region of the first gate electrode to introduce an impurity to a source-drain region of the first MOS transistor, and a third process for forming a first conductor member being in contact with the portion of the first gate electrode through a first hole disposed on an insulator member covering the substrate and a second conductor member being in contact with the second gate electrode through a second hole disposed on the insulator member.

2. 发明申请

US20190068903A1 SOLID-STATE IMAGING APPARATUS AND IMAGING SYSTEM 审中-公开
公开(公告)号：US20190068903A1
公开(公告)日：2019-02-28
申请号：US16170433
申请日：2018-10-25
申请人： CANON KABUSHIKI KAISHA
发明人： Mineo Shimotsusa , Masatsugu Itahashi , Masahiro Kobayashi , Kazunari Kawabata , Takeshi Ichikawa
IPC分类号： H04N5/369 , H04N5/238 , H01L27/146 , H04N5/3745
摘要： Provided is a solid-state imaging apparatus, including pixels each including: a photoelectric conversion unit; a charge accumulation unit; a transistor including a control electrode; a waveguide; and a light-shielding portion. The waveguide includes an incident portion and an output portion, the light-shielding portion includes a first portion that covers the control electrode of the transistor and a second portion that covers a part of the photoelectric conversion unit, the output portion and the photoelectric conversion unit are arranged with an interval therebetween, the interval between the output portion and the photoelectric conversion unit is larger than an interval between a lower end of the second portion of the light-shielding portion and the photoelectric conversion unit, and the interval between the output portion and the photoelectric conversion unit is smaller than an interval between an upper end of the second portion of the light-shielding portion and the photoelectric conversion unit.

3. 发明申请

US20160037117A1 SOLID-STATE IMAGE PICKUP ELEMENT AND IMAGE PICKUP SYSTEM 审中-公开
标题翻译：固态图像拾取元件和图像拾取系统
公开(公告)号：US20160037117A1
公开(公告)日：2016-02-04
申请号：US14809753
申请日：2015-07-27
申请人： CANON KABUSHIKI KAISHA
发明人： Toshiaki Ono , Masatsugu Itahashi , Naoki Inatani , Yu Maehashi , Hidekazu Takahashi
IPC分类号： H04N5/3745 , H04N5/217
CPC分类号： H04N5/3745 , H01L27/14667 , H04N5/2173
摘要： At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode. In one or more embodiments, each of the plurality of pixels also includes a microlens disposed on the plurality of photoelectric conversion units.
摘要翻译：至少一个固态图像拾取元件包括以二维方式布置的多个像素。多个像素中的每一个包括多个光电转换单元，每个光电转换单元包括像素电极，设置在像素电极上的光电转换层和配置为使得光电转换层夹在像素电极和对置电极之间的对置电极。在一个或多个实施例中，多个像素中的每一个还包括设置在多个光电转换单元上的微透镜。

4. 发明申请

US20150364517A1 METHOD OF MANUFACTURING SOLID-STATE IMAGE SENSOR AND SOLID-STATE IMAGE SENSOR 有权
标题翻译：制造固态图像传感器和固态图像传感器的方法
公开(公告)号：US20150364517A1
公开(公告)日：2015-12-17
申请号：US14722681
申请日：2015-05-27
申请人： CANON KABUSHIKI KAISHA
发明人： Yusuke Onuki , Masatsugu Itahashi , Nobuaki Kakinuma , Mineo Shimotsusa , Masato Fujita , Takumi Ogino , Keita Torii
IPC分类号： H01L27/146 , H01L21/78
CPC分类号： H01L27/14689 , H01L21/78 , H01L27/14612 , H01L27/14632 , H01L27/14636 , H01L27/14641 , H01L27/14687
摘要： A method of manufacturing a solid-state image sensor including preparing a wafer including a pixel region where a photoelectric conversion element is provided, a peripheral circuit region where a gate electrode of a peripheral MOS transistor for constituting a peripheral circuit is provided, and a scribe region. The method includes forming an insulating film covering the pixel region, the peripheral circuit region, and the scribe region, and forming a sidewall spacer on a side surface of the gate electrode by etching the insulating film so that portions of the insulating film remains to cover the pixel region and the scribe region, and forming a metal silicide layer in the peripheral circuit region by using, as a mask for protection from silicidation, the insulating film covering the pixel region and the scribe region.
摘要翻译：包括制备包括设置有光电转换元件的像素区域的晶片的固态图像传感器的制造方法，设置用于构成外围电路的外围MOS晶体管的栅电极的外围电路区域和划线地区。该方法包括：形成覆盖像素区域，外围电路区域和划线区域的绝缘膜，并且通过蚀刻绝缘膜在栅电极的侧表面上形成侧壁间隔物，使得绝缘膜的一部分保持覆盖像素区域和划线区域，并且通过使用覆盖像素区域和划线区域的绝缘膜作为防止硅化的掩模，在外围电路区域中形成金属硅化物层。

5. 发明申请

US20150270301A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD 审中-公开
标题翻译：半导体器件制造方法
公开(公告)号：US20150270301A1
公开(公告)日：2015-09-24
申请号：US14731077
申请日：2015-06-04
申请人： CANON KABUSHIKI KAISHA
发明人： Sho Suzuki , Takehito Okabe , Masatsugu Itahashi
IPC分类号： H01L27/146
CPC分类号： H01L27/14625 , H01L27/14609 , H01L27/14627 , H01L27/14629 , H01L27/14636 , H01L27/14687
摘要： A first waveguide member is formed, as viewed from above, in an image pickup region and a peripheral region of a semiconductor substrate. A part of the first waveguide member, which part is disposed in the peripheral region, is removed. A flattening step is then performed to flatten a surface of the first waveguide member on the side opposite to the semiconductor substrate.
摘要翻译：从上方观察，在半导体衬底的图像拾取区域和周边区域中形成第一波导构件。去除部分设置在周边区域中的第一波导构件的一部分。然后进行平坦化步骤，使第一波导构件的与半导体衬底相对的一侧的表面变平。

6. 发明授权

US08852987B2 Method of manufacturing image pickup device 有权
标题翻译：图像拾取装置的制造方法
公开(公告)号：US08852987B2
公开(公告)日：2014-10-07
申请号：US13958840
申请日：2013-08-05
申请人： Canon Kabushiki Kaisha
发明人： Yusuke Tsukagoshi , Tadashi Sawayama , Akihiro Kawano , Sho Suzuki , Takehito Okabe , Masatsugu Itahashi
IPC分类号： H01L21/00 , H01L31/0232 , H01L27/146
CPC分类号： H01L31/02327 , H01L27/14621 , H01L27/14623 , H01L27/14629 , H01L27/14685
摘要： A method of manufacturing an image pickup device includes a step of forming a filling member such that the filling member covers a light guiding part and a peripheral part provided in a film. The light guiding part is positioned on an image pickup region of the image pickup device and has openings that correspond to respective photoelectric conversion portions. The peripheral part is positioned on a peripheral region of the image pickup device. The filling member fills in the openings. The method includes a step of processing the filling member. The method includes a step of forming light guiding members, which is performed after the step of processing filling member has been performed, by a polishing process performed on the filling member so that the light guiding part is exposed. The light guiding members are part of the filling member and disposed in the openings.
摘要翻译：制造图像拾取装置的方法包括形成填充构件的步骤，使得填充构件覆盖设置在膜中的导光部和周边部。导光部位于图像摄取装置的摄像区域上，具有与各光电转换部对应的开口部。周边部分位于图像拾取装置的外围区域上。填充构件填充开口。该方法包括处理填充构件的步骤。该方法包括：通过在填充构件上进行的抛光处理，在进行处理填充构件的步骤之后进行的导光构件的形成步骤，使得导光部露出。导光构件是填充构件的一部分并且设置在开口中。

7. 发明申请

US20130087838A1 PHOTOELECTRIC CONVERSION DEVICE AND IMAGING SYSTEM 有权
标题翻译：光电转换器和成像系统
公开(公告)号：US20130087838A1
公开(公告)日：2013-04-11
申请号：US13632733
申请日：2012-10-01
申请人： CANON KABUSHIKI KAISHA
发明人： Ryuichi Mishima , Hideaki Ishino , Kenji Togo , Masatsugu Itahashi , Takehito Okabe
IPC分类号： H01L27/146
CPC分类号： H01L27/1462 , H01L27/14621 , H01L27/14627 , H01L27/14643
摘要： A photoelectric conversion device includes a film that covers the photoelectric conversion part and a transfer gate electrode, wherein a first region having a refractive index lower than refractive indices of the film and the photoelectric conversion part, is provided between the film and the photoelectric conversion part, and a second region having a refractive index lower than the refractive indices of the transfer gate electrode and the film, is provided between the film and the top surface of the transfer gate electrode, and wherein T1
摘要翻译：光电转换装置包括覆盖光电转换部分和传输栅电极的膜，其中在膜和光电转换部分之间设置折射率低于膜和光电转换部分的折射率的第一区域，并且在所述膜和所述传输栅电极的顶表面之间设置折射率低于所述传输栅极和所述膜的折射率的第二区域，并且其中T1

8. 发明授权

US11159756B2 Solid-state image pickup element and image pickup system 有权
公开(公告)号：US11159756B2
公开(公告)日：2021-10-26
申请号：US16148490
申请日：2018-10-01
申请人： CANON KABUSHIKI KAISHA
发明人： Toshiaki Ono , Masatsugu Itahashi , Naoki Inatani , Yu Maehashi , Hidekazu Takahashi
IPC分类号： H04N5/3745 , H04N5/217 , H01L27/146
摘要： At least one solid-state image pickup element includes a plurality of pixels that are arranged in a two-dimensional manner. Each of the plurality of pixels includes a plurality of photoelectric conversion units each including a pixel electrode, a photoelectric conversion layer disposed on the pixel electrode, and a counter electrode disposed such that the photoelectric conversion layer is sandwiched between the pixel electrode and the counter electrode. In one or more embodiments, each of the plurality of pixels also includes a microlens disposed on the plurality of photoelectric conversion units.

9. 发明授权

US10381389B2 Solid state imaging device, manufacturing method of solid state imaging device, and imaging system 有权
公开(公告)号：US10381389B2
公开(公告)日：2019-08-13
申请号：US15897940
申请日：2018-02-15
申请人： CANON KABUSHIKI KAISHA
发明人： Mari Isobe , Shunsuke Nakatsuka , Masatsugu Itahashi , Yasuhiro Sekine , Sho Suzuki
IPC分类号： H01L27/146 , H04N5/378
摘要： A manufacturing method of a solid state imaging device according to one embodiment includes the steps of forming, on a substrate, a gate electrode of a first transistor and a gate electrode of a second transistor adjacent to the first transistor; forming an insulator film covering the gate electrode of the first transistor and the gate electrode of the second transistor such that a void is formed between the gate electrode of the first transistor and the gate electrode of the second transistor; forming a film on the insulator film; and forming a light shielding member by removing a part of the film by an etching.

10. 发明授权

US09935140B2 Solid state imaging device, manufacturing method of solid state imaging device, and imaging system 有权
公开(公告)号：US09935140B2
公开(公告)日：2018-04-03
申请号：US15152982
申请日：2016-05-12
申请人： CANON KABUSHIKI KAISHA
发明人： Mari Isobe , Shunsuke Nakatsuka , Masatsugu Itahashi , Yasuhiro Sekine , Sho Suzuki
IPC分类号： H01L27/148 , H01L27/146 , H04N5/378
CPC分类号： H01L27/14612 , H01L27/14603 , H01L27/14621 , H01L27/14623 , H01L27/14627 , H01L27/14636 , H01L27/14643 , H01L27/14645 , H01L27/14685 , H01L27/14689 , H04N5/378
摘要： A manufacturing method of a solid state imaging device according to one embodiment includes the steps of forming, on a substrate, a gate electrode of a first transistor and a gate electrode of a second transistor adjacent to the first transistor; forming an insulator film covering the gate electrode of the first transistor and the gate electrode of the second transistor such that a void is formed between the gate electrode of the first transistor and the gate electrode of the second transistor; forming a film on the insulator film; and forming a light shielding member by removing a part of the film by an etching.

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