专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09437637B2 Semiconductor device manufacturing method and resist pattern forming method 有权
标题翻译：半导体器件制造方法和抗蚀剂图案形成方法
公开(公告)号：US09437637B2
公开(公告)日：2016-09-06
申请号：US14681350
申请日：2015-04-08
申请人： CANON KABUSHIKI KAISHA
发明人： Atsushi Kanome , Nobutaka Ukigaya , Koji Hara , Satoshi Yoshizaki , Masahiko Kondo
IPC分类号： H01L21/266 , H01L27/146 , G03F7/00 , G03F7/40
CPC分类号： H01L27/1463 , G03F7/0035 , G03F7/40 , H01L21/26513 , H01L27/1461 , H01L27/14643 , H01L27/14689
摘要： A method for manufacturing a semiconductor device comprising, forming a first photoresist pattern by exposing and then developing a first photoresist film formed on a substrate, irradiating the first photoresist pattern with UV light to cure its surface, forming a second photoresist film so as to cover the substrate and the first photoresist pattern, forming a second photoresist pattern and performing ion implantation in the substrate using the second photoresist pattern. The second photoresist pattern is not subjected to UV irradiation after the second photoresist film has been developed and before the ion implantation is performed, or is irradiated with the UV light, after the second photoresist film has been developed and before the ion implantation is performed, under a reduced condition relative to that for the first photoresist pattern.
摘要翻译：一种半导体器件的制造方法，其特征在于，包括：通过使形成在基板上的第一光致抗蚀剂膜曝光然后显影而形成第一光致抗蚀剂图案，用紫外光照射第一光致抗蚀剂图案以固化其表面，形成第二光致抗蚀剂膜以覆盖所述基板和所述第一光致抗蚀剂图案形成第二光致抗蚀剂图案，并使用所述第二光致抗蚀剂图案在所述基板中进行离子注入。第二光致抗蚀剂图案在第二光致抗蚀剂膜已经被显影之后并且在进行离子注入之前或在被UV照射之后不经受UV照射，在第二光致抗蚀剂膜已被显影之后并且在离子注入之前，在相对于第一光致抗蚀剂图案的条件下降低。

2. 发明授权

US09583347B2 Manufacturing method for semiconductor device using resist patterns and impurity injections 有权
标题翻译：使用抗蚀剂图案和杂质注入的半导体器件的制造方法
公开(公告)号：US09583347B2
公开(公告)日：2017-02-28
申请号：US15072585
申请日：2016-03-17
申请人： CANON KABUSHIKI KAISHA
发明人： Mikio Arakawa , Satoshi Yoshizaki
IPC分类号： H01L21/266 , H01L27/146 , H01L21/027 , H01L21/761
CPC分类号： H01L21/266 , H01L21/0274 , H01L21/761 , H01L27/1463 , H01L27/14689
摘要： A manufacturing method for a semiconductor device, the method, comprising forming, on a substrate, a first resist pattern including a plurality of line patterns extending in a predetermined direction, injecting an impurity into the substrate by using the first resist pattern, removing the first resist pattern, forming a second resist pattern including a plurality of second line patterns extending in the predetermined direction, and injecting an impurity into the substrate by using the second resist pattern, wherein, in the forming the second resist pattern, the plurality of second line patterns are respectively formed between places where the adjacent first line patterns are formed.
摘要翻译：一种半导体器件的制造方法，所述方法包括在基板上形成包括沿预定方向延伸的多个线图案的第一抗蚀剂图案，通过使用所述第一抗蚀剂图案将杂质注入到所述基板中，形成第二抗蚀剂图案，该第二抗蚀剂图案包括沿预定方向延伸的多个第二线图案，并且通过使用第二抗蚀剂图案将杂质注入到所述基板中，其中，在形成所述第二抗蚀剂图案时，所述多个第二线图案分别形成在形成相邻的第一线图案的位置之间。

3. 发明申请

US20160284550A1 MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20160284550A1
公开(公告)日：2016-09-29
申请号：US15072585
申请日：2016-03-17
申请人： CANON KABUSHIKI KAISHA
发明人： Mikio Arakawa , Satoshi Yoshizaki
IPC分类号： H01L21/266 , H01L27/146
CPC分类号： H01L21/266 , H01L21/0274 , H01L21/761 , H01L27/1463 , H01L27/14689
摘要： A manufacturing method for a semiconductor device, the method, comprising forming, on a substrate, a first resist pattern including a plurality of line patterns extending in a predetermined direction, injecting an impurity into the substrate by using the first resist pattern, removing the first resist pattern, forming a second resist pattern including a plurality of second line patterns extending in the predetermined direction, and injecting an impurity into the substrate by using the second resist pattern, wherein, in the forming the second resist pattern, the plurality of second line patterns are respectively formed between places where the adjacent first line patterns are formed.
摘要翻译：一种半导体器件的制造方法，所述方法包括在基板上形成包括沿预定方向延伸的多个线图案的第一抗蚀剂图案，通过使用所述第一抗蚀剂图案将杂质注入到所述基板中，形成第二抗蚀剂图案，该第二抗蚀剂图案包括沿预定方向延伸的多个第二线图案，并且通过使用第二抗蚀剂图案将杂质注入到所述基板中，其中，在形成所述第二抗蚀剂图案时，所述多个第二线图案分别形成在形成相邻的第一线图案的位置之间。

4. 发明申请

US20150301454A1 SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND RESIST PATTERN FORMING METHOD 有权
标题翻译：半导体器件制造方法和电阻形成方法
公开(公告)号：US20150301454A1
公开(公告)日：2015-10-22
申请号：US14681350
申请日：2015-04-08
申请人： CANON KABUSHIKI KAISHA
发明人： Atsushi Kanome , Nobutaka Ukigaya , Koji Hara , Satoshi Yoshizaki , Masahiko Kondo
IPC分类号： G03F7/20 , H01L27/146
CPC分类号： H01L27/1463 , G03F7/0035 , G03F7/40 , H01L21/26513 , H01L27/1461 , H01L27/14643 , H01L27/14689
摘要： A method for manufacturing a semiconductor device comprising, forming a first photoresist pattern by exposing and then developing a first photoresist film formed on a substrate, irradiating the first photoresist pattern with UV light to cure its surface, forming a second photoresist film so as to cover the substrate and the first photoresist pattern, forming a second photoresist pattern and performing ion implantation in the substrate using the second photoresist pattern. The second photoresist pattern is not subjected to UV irradiation after the second photoresist film has been developed and before the ion implantation is performed, or is irradiated with the UV light, after the second photoresist film has been developed and before the ion implantation is performed, under a reduced condition relative to that for the first photoresist pattern.
摘要翻译：一种半导体器件的制造方法，其特征在于，包括：通过使形成在基板上的第一光致抗蚀剂膜曝光然后显影而形成第一光致抗蚀剂图案，用紫外光照射第一光致抗蚀剂图案以固化其表面，形成第二光致抗蚀剂膜以覆盖所述基板和所述第一光致抗蚀剂图案形成第二光致抗蚀剂图案，并使用所述第二光致抗蚀剂图案在所述基板中进行离子注入。第二光致抗蚀剂图案在第二光致抗蚀剂膜已经被显影之后并且在进行离子注入之前或在被UV照射之后不经受UV照射，在第二光致抗蚀剂膜已被显影之后并且在离子注入之前，在相对于第一光致抗蚀剂图案的条件下降低。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式