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1. 发明授权

US09722126B2 Photoconductive device, measurement apparatus, and manufacturing method 有权
公开(公告)号：US09722126B2
公开(公告)日：2017-08-01
申请号：US15228959
申请日：2016-08-04
申请人： CANON KABUSHIKI KAISHA
发明人： Takayuki Koizumi , Toshihiko Ouchi
IPC分类号： H01L27/15 , H01L31/167 , G01J5/20 , H01L31/0216 , H01L31/0304 , H01L31/028 , H01L31/18 , H01L33/44 , H01L33/30 , H01L33/32 , H01L33/34 , H01L33/00
CPC分类号： H01L31/167 , G01J5/20 , H01L31/02161 , H01L31/0224 , H01L31/0232 , H01L31/028 , H01L31/0304 , H01L31/03044 , H01L31/03046 , H01L31/09 , H01L31/1828 , H01L33/0062 , H01L33/30 , H01L33/32 , H01L33/34 , H01L33/44 , Y02E10/544
摘要： A photoconductive device that generates or detects terahertz radiation includes a semiconductor layer; a structure portion; and an electrode. The semiconductor layer has a thickness no less than a first propagation distance and no greater than a second propagation distance, the first propagation distance being a distance that the surface plasmon wave propagates through the semiconductor layer in a perpendicular direction of an interface between the semiconductor layer and the structure portion until an electric field intensity of the surface plasmon wave becomes 1/e times the electric field intensity of the surface plasmon wave at the interface, the second propagation distance being a distance that a terahertz wave having an optical phonon absorption frequency of the semiconductor layer propagates through the semiconductor layer in the perpendicular direction until an electric field intensity of the terahertz wave becomes 1/e2 times the electric field intensity of the terahertz wave at the interface.

2. 发明申请

US20170062644A1 PHOTOCONDUCTIVE DEVICE, MEASUREMENT APPARATUS, AND MANUFACTURING METHOD 有权
标题翻译：光电装置，测量装置和制造方法
公开(公告)号：US20170062644A1
公开(公告)日：2017-03-02
申请号：US15228959
申请日：2016-08-04
申请人： CANON KABUSHIKI KAISHA
发明人： Takayuki Koizumi , Toshihiko Ouchi
IPC分类号： H01L31/167 , H01L31/0216 , H01L31/0304 , H01L31/028 , H01L33/00 , H01L33/44 , H01L33/30 , H01L33/32 , H01L33/34 , G01J5/20 , H01L31/18
CPC分类号： H01L31/167 , G01J5/20 , H01L31/02161 , H01L31/0224 , H01L31/0232 , H01L31/028 , H01L31/0304 , H01L31/03044 , H01L31/03046 , H01L31/09 , H01L31/1828 , H01L33/0062 , H01L33/30 , H01L33/32 , H01L33/34 , H01L33/44 , Y02E10/544
摘要： A photoconductive device that generates or detects terahertz radiation includes a semiconductor layer; a structure portion; and an electrode. The semiconductor layer has a thickness no less than a first propagation distance and no greater than a second propagation distance, the first propagation distance being a distance that the surface plasmon wave propagates through the semiconductor layer in a perpendicular direction of an interface between the semiconductor layer and the structure portion until an electric field intensity of the surface plasmon wave becomes 1/e times the electric field intensity of the surface plasmon wave at the interface, the second propagation distance being a distance that a terahertz wave having an optical phonon absorption frequency of the semiconductor layer propagates through the semiconductor layer in the perpendicular direction until an electric field intensity of the terahertz wave becomes 1/e2 times the electric field intensity of the terahertz wave at the interface.
摘要翻译：产生或检测太赫兹辐射的光电装置包括半导体层; 结构部分; 和电极。半导体层具有不小于第一传播距离且不大于第二传播距离的厚度，第一传播距离是表面等离子体激元波在半导体层之间的界面的垂直方向上通过半导体层传播的距离直到表面等离子体激元波的电场强度成为界面处的表面等离激元波的电场强度的1 / e倍以下的结构部分，第2传播距离为具有光学声子吸收频率的太赫兹波的距离半导体层沿垂直方向传播通过半导体层，直到太赫兹波的电场强度变为界面处的太赫兹波的电场强度的1 / e2倍。

3. 发明申请

US20160351744A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体器件及其制造方法
公开(公告)号：US20160351744A1
公开(公告)日：2016-12-01
申请号：US15106996
申请日：2014-12-22
申请人： CANON KABUSHIKI KAISHA
发明人： Ryota Sekiguchi , Toshihiko Ouchi
IPC分类号： H01L31/112 , H01L31/108 , G01J1/44 , H01L27/146
CPC分类号： H01L31/1123 , G01J1/44 , G01J2001/4446 , G01N21/3581 , H01L27/0629 , H01L27/1463 , H01L27/14649 , H01L27/14689 , H01L29/66143 , H01L29/872 , H01L31/1085 , H01L31/1804 , Y02E10/547 , Y02P70/521
摘要： A semiconductor device includes a silicon substrate and a detection element and p-type and n-type MOS transistors, which are arranged on the silicon substrate, wherein the detection element includes a semiconductor layer, electrodes, and a Schottkey barrier disposed therebetween, the semiconductor layer is arranged just above a layer having the same composition and height as those of an impurity diffusion layer in the source or drain of the p-type or n-type MOS transistor, a region, in the silicon substrate, having the same composition and height as those of a channel region, in the silicon substrate, just below a gate oxide film of the p-type MOS transistor or the n-type MOS transistor, or a region, in the silicon substrate, having the same composition and height as those of a region just below a field oxide film disposed between the p-type and the n-type MOS transistor.
摘要翻译：半导体器件包括硅衬底和布置在硅衬底上的检测元件和p型和n型MOS晶体管，其中检测元件包括半导体层，电极和设置在其间的肖特基势垒，半导体层位于具有与p型或n型MOS晶体管的源极或漏极中的杂质扩散层相同的组成和高度的层的正上方，硅衬底中具有相同组成的区域，以及在硅衬底中刚好在p型MOS晶体管或n型MOS晶体管的栅极氧化膜的下方的沟道区的高度，或硅衬底中的具有相同组成和高度的区域位于p型和n型MOS晶体管之间的场氧化物膜正下方的区域。

4. 发明申请

US20150365611A1 IMAGE FORMING APPARATUS AND IMAGING SYSTEM 有权
标题翻译：图像形成装置和成像系统
公开(公告)号：US20150365611A1
公开(公告)日：2015-12-17
申请号：US14763548
申请日：2014-02-25
申请人： CANON KABUSHIKI KAISHA
发明人： Ryota Sekiguchi , Toshihiko Ouchi
IPC分类号： H04N5/357 , H04N5/3745 , H01L27/146
CPC分类号： H04N5/357 , G01N21/3581 , G01N22/02 , G01S7/4914 , G01S17/89 , H01L27/14609 , H01L27/14643 , H04N5/3745
摘要： Provided by the present invention is an image forming apparatus wherein a signal to noise ratio is improved without reducing a video rate of a real-time moving image. The image forming apparatus comprises: a pixel 101 having an electromagnetic wave detecting element 111 configured to detect an electromagnetic wave; a switch 110 configured to read out a signal from the pixel; a signal generating unit 102 configured to generate a signal 114 having a predetermined period, wherein the pixel is connected to a transmission line 103 for supplying, to the pixel, the signal having the predetermined period, and to a scanning line 106 and 107 for reading out the signal from the pixel through the switch, and the pixel has a frequency converting element 113 configured to convert a frequency of a detection signal of the electromagnetic wave detecting element, using the signal having the predetermined period.
摘要翻译：本发明提供一种在不降低实时运动图像的视频速率的情况下提高信噪比的图像形成装置。图像形成装置包括：具有电磁波检测元件111的像素101，被配置为检测电磁波; 被配置为从像素读出信号的开关110; 信号生成单元102，其被配置为生成具有预定周期的信号114，其中该像素连接到用于向该像素提供具有预定周期的信号的传输线103以及用于读取的扫描线106和107 通过开关从像素输出信号，并且像素具有频率转换元件113，其被配置为使用具有预定周期的信号来转换电磁波检测元件的检测信号的频率。

5. 发明申请

US20150355085A1 TERAHERTZ-WAVE GENERATING ELEMENT, TERAHERTZ-WAVE DETECTING ELEMENT, AND TERAHERTZ TIME-DOMAIN SPECTROSCOPY DEVICE 审中-公开
标题翻译： TERAHERTZ波形发生元件，TERAHERTZ波检测元件和TERAHERTZ时域光谱仪
公开(公告)号：US20150355085A1
公开(公告)日：2015-12-10
申请号：US14830511
申请日：2015-08-19
申请人： CANON KABUSHIKI KAISHA
发明人： Toshihiko Ouchi
IPC分类号： G01N21/3586 , G01J3/02 , G01J3/42
CPC分类号： G02F1/3544 , G01J3/0216 , G01J3/42 , G01N21/3586 , G01N21/4795 , G01N2201/06113 , G02F1/0356 , G02F1/377 , G02F1/395 , G02F2001/3546 , G02F2001/374 , G02F2203/13
摘要： A terahertz-wave generating element includes a waveguide including an electro-optic crystal; an optical coupling member that extracts a terahertz wave, which is generated from the electro-optic crystal as a result of light propagating through the waveguide, to a space; and at least two electrodes that cause a first-order electro-optic effect in the electro-optic crystal by applying an electric field to the waveguide so as to change a propagation state of the light propagating through the waveguide. A crystal axis of the electro-optic crystal of the waveguide is set such that the terahertz wave generated by a second-order nonlinear optical process and the light propagating through the waveguide are phase-matched.
摘要翻译：太赫兹波发生元件包括：包括电光晶体的波导; 光耦合构件，其将由光电晶体产生的太赫兹波作为由波导传播的光的结果提取到空间; 以及至少两个电极，通过向波导施加电场来引起电光晶体中的一阶电光效应，以便改变通过波导传播的光的传播状态。设置波导的电光晶体的晶轴，使得由二阶非线性光学处理产生的太赫兹波和通过波导传播的光相位匹配。

6. 发明申请

US20150212388A1 TERAHERTZ WAVE GENERATION ELEMENT, TERAHERTZ WAVE DETECTION ELEMENT, AND TERAHERTZ TIME DOMAIN SPECTROSCOPE DEVICE 审中-公开
标题翻译： TERAHERTZ波形发生元件，TERAHERTZ波检测元件和TERAHERTZ时域光谱仪
公开(公告)号：US20150212388A1
公开(公告)日：2015-07-30
申请号：US14680640
申请日：2015-04-07
申请人： CANON KABUSHIKI KAISHA
发明人： Toshihiko Ouchi
IPC分类号： G02F1/365 , G02F1/355 , G02F1/35 , G02B6/42
CPC分类号： G02F1/365 , G02B6/4296 , G02F1/353 , G02F1/3534 , G02F1/3551 , G02F2203/07 , G02F2203/13 , G02F2203/22 , Y10T156/10
摘要： A terahertz wave generation element is provided, which includes: an optical waveguide including a core of electro-optic crystal; an optical coupler for extracting a terahertz wave generated from the optical waveguide when light propagates in the optical waveguide to a space; and a reflecting layer disposed on the opposite side to the optical coupler with respect to the core of the optical waveguide, so as to reflect the generated terahertz wave. According to the element, it is possible to provide a generation element that can generate a relatively high intensity terahertz wave efficiently by photoexcitation or generate a terahertz wave having a relatively narrow pulse width, so as to flexibly control waveform shaping of the generated terahertz wave.
摘要翻译：提供了一种太赫兹波发生元件，其包括：包括电光晶体芯的光波导; 光耦合器，当光在光波导中传播到空间时，提取从光波导产生的太赫兹波; 以及相对于光波导的芯设置在与光耦合器相对的一侧的反射层，以便反射所产生的太赫兹波。根据该要素，可以提供能够通过光激发有效地生成相对高强度的太赫兹波或者产生具有相对窄的脉冲宽度的太赫兹波的发生元件，以便灵活地控制产生的太赫兹波的波形整形。

7. 发明授权

US09091869B2 Terahertz-wave element, terahertz-wave detecting device, and terahertz time-domain spectroscopy system 有权
标题翻译：太赫兹波元件，太赫兹波检测装置和太赫兹时域光谱系统
公开(公告)号：US09091869B2
公开(公告)日：2015-07-28
申请号：US14552848
申请日：2014-11-25
申请人： Canon Kabushiki Kaisha
发明人： Toshihiko Ouchi
IPC分类号： G02F1/035 , G02F1/03
CPC分类号： G02F1/035 , G01J5/0818 , G01N21/3586 , G02F1/0126 , G02F1/0311 , G02F1/3511 , G02F1/3515 , G02F1/3517 , G02F1/365 , G02F2203/13
摘要： A terahertz-wave element includes a waveguide (2, 4, 5) that includes an electro-optic crystal and allows light to propagate therethrough, and a coupling member (7) that causes a terahertz wave to enter the waveguide (2, 4, 5). The propagation state of the light propagating through the waveguide (2, 4, 5) changes as the terahertz wave enters the waveguide (2, 4, 5) via the coupling member (7).
摘要翻译：太赫兹波元件包括包括电光晶体并允许光传播通过的波导（2,4,5）和使太赫兹波进入波导（2,4）的耦合构件（7） 5）。传播通过波导（2,4,5）的光的传播状态随着太赫兹波通过耦合部件（7）进入波导（2,4,5）而变化。

8. 发明申请

US20150086150A1 TERAHERTZ-WAVE ELEMENT, TERAHERTZ-WAVE DETECTING DEVICE, TERAHERTZ TIME-DOMAIN SPECTROSCOPY SYSTEM, AND TOMOGRAPHY APPARATUS 审中-公开
标题翻译： TERAHERTZ-WAVE ELEMENT，TERAHERTZ-WAVE DETECTING DEVICE，TERAHERTZ时域光谱系统和TOMOGRAPHY设备
公开(公告)号：US20150086150A1
公开(公告)日：2015-03-26
申请号：US14552848
申请日：2014-11-25
申请人： CANON KABUSHIKI KAISHA
发明人： Toshihiko Ouchi
IPC分类号： G02F1/035 , G02F1/03
CPC分类号： G02F1/035 , G01J5/0818 , G01N21/3586 , G02F1/0126 , G02F1/0311 , G02F1/3511 , G02F1/3515 , G02F1/3517 , G02F1/365 , G02F2203/13
摘要： A terahertz-wave element includes a waveguide (2, 4, 5) that includes an electro-optic crystal and allows light to propagate therethrough, and a coupling member (7) that causes a terahertz wave to enter the waveguide (2, 4, 5). The propagation state of the light propagating through the waveguide (2, 4, 5) changes as the terahertz wave enters the waveguide (2, 4, 5) via the coupling member (7).
摘要翻译：太赫兹波元件包括包括电光晶体并允许光传播通过的波导（2,4,5）和使太赫兹波进入波导（2,4）的耦合构件（7） 5）。传播通过波导（2,4,5）的光的传播状态随着太赫兹波通过耦合部件（7）进入波导（2,4,5）而变化。

9. 发明授权

US08933407B2 Terahertz-wave detecting device 有权
标题翻译：太赫波检测装置
公开(公告)号：US08933407B2
公开(公告)日：2015-01-13
申请号：US14105840
申请日：2013-12-13
申请人： Canon Kabushiki Kaisha
发明人： Toshihiko Ouchi
IPC分类号： G02F1/35 , G01N21/35 , G01J5/08 , G02F1/365 , G02F1/01
CPC分类号： G02F1/035 , G01J5/0818 , G01N21/3586 , G02F1/0126 , G02F1/0311 , G02F1/3511 , G02F1/3515 , G02F1/3517 , G02F1/365 , G02F2203/13
摘要： A terahertz-wave element includes a waveguide (2, 4, 5) that includes an electro-optic crystal and allows light to propagate therethrough, and a coupling member (7) that causes a terahertz wave to enter the waveguide (2, 4, 5). The propagation state of the light propagating through the waveguide (2, 4, 5) changes as the terahertz wave enters the waveguide (2, 4, 5) via the coupling member (7).
摘要翻译：太赫兹波元件包括包括电光晶体并允许光传播通过的波导（2,4,5）和使太赫兹波进入波导（2,4）的耦合构件（7） 5）。传播通过波导（2,4,5）的光的传播状态随着太赫兹波通过耦合部件（7）进入波导（2,4,5）而变化。

10. 发明申请

US20140254615A1 LASER DEVICE 审中-公开
标题翻译：激光装置
公开(公告)号：US20140254615A1
公开(公告)日：2014-09-11
申请号：US14195926
申请日：2014-03-04
申请人： CANON KABUSHIKI KAISHA
发明人： Ryota Sekiguchi , Toshihiko Ouchi
IPC分类号： H01S5/22
CPC分类号： H01S5/0421 , H01S5/1046 , H01S5/1064 , H01S5/2275 , H01S5/3402 , H01S2302/02
摘要： A laser device comprises a waveguide including a resonance structure for causing electromagnetic waves to resonate. The waveguide by turn comprises a gain medium for generating electromagnetic waves, a first negative permittivity medium arranged electrically in contact with the gain medium, a second negative permittivity medium arranged electrically in contact with the gain medium at the side opposite to the first negative permittivity medium so as to dispose the gain medium between the first and second negative permittivity mediums, and lateral structures of a positive permittivity medium arranged to be in contact with lateral surfaces of the gain medium and sandwiched between the first and second negative permittivity mediums. The waveguide has a section in which the width w of the gain medium sandwiched between the lateral structures is not greater than twice of the thickness h of the lateral structures sandwiched between the first and second negative permittivity mediums.
摘要翻译：激光装置包括包括用于使电磁波谐振的谐振结构的波导。该波导包括用于产生电磁波的增益介质，与增益介质电接触布置的第一负介电常数介质，与第一负介电常数介质相反侧与增益介质电接触的第二负介电常数介质以便在第一和第二负介电常数介质之间配置增益介质，以及布置成与增益介质的侧表面接触并夹在第一和第二负介电常数介质之间的正介电常数介质的横向结构。波导具有其中夹在横向结构之间的增益介质的宽度w不大于夹在第一和第二负介电常数介质之间的横向结构的厚度h的两倍的部分。

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