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1. 发明授权

US11521540B2 Display device and electronic equipment 有权
公开(公告)号：US11521540B2
公开(公告)日：2022-12-06
申请号：US16668539
申请日：2019-10-30
申请人： CANON KABUSHIKI KAISHA
发明人： Takashi Muto , Yasuharu Ota
IPC分类号： G09G3/22
摘要： A display device is provided. The device comprises a pixel array, a scanning circuit configured to select a row in the pixel array, and a signal output circuit configured to supply image signals to pixels arranged in the row selected by the scanning circuit. The device displays an image using pixels arranged between an initial line on one side in the pixel array and an end line succeeding the initial line on the other side. The scanning circuit includes a start designation circuit configured to designate the initial line, an end designation circuit configured to designate the end line and a shift register. The shift register is configured to start selection for writing the image signals from the initial line and sequentially select the rows between the initial line and the end line in one frame period for displaying one image.

2. 发明申请

US20220326076A1 PHOTOELECTRIC CONVERSION DEVICE, METHOD OF DRIVING PHOTOELECTRIC CONVERSION DEVICE, IMAGING SYSTEM, AND MOVING BODY 有权
公开(公告)号：US20220326076A1
公开(公告)日：2022-10-13
申请号：US17851398
申请日：2022-06-28
申请人： CANON KABUSHIKI KAISHA
发明人： Yasuharu Ota , Yukihiro Kuroda
IPC分类号： G01J1/44 , G05D1/02 , H04N5/369 , H04N5/374 , H04N5/378
摘要： A photoelectric conversion device includes an avalanche multiplying photodiode, a signal generation unit that includes a control unit configured to control an applied voltage to the photodiode and generates a photon detection pulse based on an output generated by incidence of a photon to the photodiode, and a counter that counts the photon detection pulse output from the signal generation unit, and the counter outputs a setting value detection signal when a count value of the photon detection pulse reaches a predetermined setting value, and in response to receiving the setting value detection signal, the control unit controls the applied voltage to the photodiode so as to stop generation of an avalanche current in the photodiode.

3. 发明申请

US20170222632A1 SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS 审中-公开
公开(公告)号：US20170222632A1
公开(公告)日：2017-08-03
申请号：US15413104
申请日：2017-01-23
申请人： CANON KABUSHIKI KAISHA
发明人： Yasuharu Ota , Yasushi Matsuno , Takashi Muto , Daisuke Yoshida
IPC分类号： H03K3/037 , H03G3/30 , H03K3/013 , H01L23/528 , H01L27/092
CPC分类号： H03K3/037 , H01L23/5283 , H01L27/092 , H03G3/30 , H03K3/013 , H03K19/00346
摘要： A semiconductor device provides a plurality of circuit units arranged in parallel. Each of the plurality of circuit units includes a first signal line that transmits a first signal, which is an analog signal; a sending unit that sends a second signal; a receiving unit that receives the second signal; and a second signal line that transmits the second signal from the sending unit to the receiving unit. The distance between the first and second signal lines is shorter than the pitches at which the plurality of circuit units is arranged. The second signal is a pulse signal.

4. 发明申请

US20150001377A1 PHOTOELECTRIC CONVERSION DEVICE MANUFACTURING METHOD, PHOTOELECTRIC CONVERSION DEVICE, AND IMAGING SYSTEM 有权
标题翻译：光电转换装置制造方法，光电转换装置和成象系统
公开(公告)号：US20150001377A1
公开(公告)日：2015-01-01
申请号：US14316369
申请日：2014-06-26
申请人： CANON KABUSHIKI KAISHA
发明人： Koichi Tazoe , Yu Arishima , Akira Okita , Kazuki Ohshitanai , Yasuharu Ota
IPC分类号： H01L27/146 , H01L21/8234 , H01L31/18
CPC分类号： H01L31/18 , H01L27/14603 , H01L27/14609 , H01L27/1461 , H01L27/14612 , H01L27/14641 , H01L27/14689
摘要： A method comprises preparing a semiconductor substrate having a first portion, and a second portion including a first region and a second region; forming an active region in the first portion, and an isolating portion of an insulator defining the active region in the second portion; forming a first semiconductor region of a first conductivity type configuring a first photoelectric conversion element, a second semiconductor region of first conductivity type configuring a second photoelectric conversion element, a third semiconductor region of first conductivity type, a fourth semiconductor region of the conductivity type, a first gate electrode configuring a first transfer transistor, and a second gate electrode configuring a second transfer; exposing the first region of the semiconductor substrate, and performing ion implantation masked by a first photoresist pattern covering the second region of the semiconductor substrate, thus forming a fifth semiconductor region of a second conductivity type.
摘要翻译：一种方法包括制备具有第一部分的半导体衬底和包括第一区域和第二区域的第二部分; 在第一部分中形成有源区，以及在第二部分中限定有源区的绝缘体的隔离部分; 形成构成第一光电转换元件的第一导电类型的第一半导体区域，构成第二光电转换元件的第一导电类型的第二半导体区域，第一导电类型的第三半导体区域，导电类型的第四半导体区域，构成第一转移晶体管的第一栅电极和构成第二转移的第二栅电极; 暴露半导体衬底的第一区域，并执行由覆盖半导体衬底的第二区域的第一光刻胶图案掩蔽的离子注入，从而形成第二导电类型的第五半导体区域。

5. 发明申请

US20140333817A1 IMAGE PICKUP APPARATUS 有权
标题翻译：图像拾取装置
公开(公告)号：US20140333817A1
公开(公告)日：2014-11-13
申请号：US14272279
申请日：2014-05-07
申请人： CANON KABUSHIKI KAISHA
发明人： Akira Okita , Yu Arishima , Yasuharu Ota
IPC分类号： H01L27/146 , H04N5/374 , H04N5/232
CPC分类号： H04N5/374 , H01L27/14641 , H04N5/3577 , H04N5/3696 , H04N5/37457 , H04N5/376
摘要： An output impedance of a drive unit configured to drive a drive line is set to be varied during a period in which a drive pulse for setting each transfer transistor to be in a conductive state is supplied and during a period in which a drive pulse for setting each transfer transistor to be in a non-conductive state is supplied.
摘要翻译：被配置为驱动驱动线的驱动单元的输出阻抗被设定为在提供用于设置每个传输晶体管的驱动脉冲处于导通状态的时段期间和在用于设置的驱动脉冲的时段期间被改变提供处于非导通状态的每个传输晶体管。

6. 发明申请

US20230117198A1 PHOTOELECTRIC CONVERSION APPARATUS HAVING AVALANCHE PHOTODIODE 有权
公开(公告)号：US20230117198A1
公开(公告)日：2023-04-20
申请号：US18047133
申请日：2022-10-17
申请人： CANON KABUSHIKI KAISHA
发明人： Keisuke Ito , Yasuharu Ota , Masahiro Kobayashi
IPC分类号： H01L27/146 , H04N5/369 , H04N5/3745
摘要： A photoelectric conversion apparatus includes a pixel area including a plurality of pixels each including an avalanche photodiode including an anode and a cathode. The plurality of pixels includes effective pixels that output a photon detection signal responsive to photo detection, dummy pixels that do not output the photon detection signal, and optical black pixels including a light shielding portion. The pixel area includes a first area including the effective pixels, a second area including the dummy pixels, and a third area including the optical black pixels. The second area includes a first portion in contact with an end of the pixel area and a second portion. The first portion, the first area, the second portion, and the third area are disposed in this order in a first direction. A width of the second portion is larger than a width of the first portion in the first direction.

7. 发明申请

US20220115366A1 PHOTOELECTRIC CONVERSION APPARATUS, PHOTO-DETECTION SYSTEM, AND MOVABLE BODY 有权
公开(公告)号：US20220115366A1
公开(公告)日：2022-04-14
申请号：US17498528
申请日：2021-10-11
申请人： CANON KABUSHIKI KAISHA
发明人： Yasuharu Ota , Yukihiro Kuroda , Kazuhiro Morimoto
IPC分类号： H01L25/18 , H01L27/144 , H01L27/146 , G05D1/02 , B60W30/09 , G01K1/02 , G01C3/02
摘要： A photoelectric conversion apparatus includes: a first substrate including an avalanche photodiode; and a second substrate, in which the first substrate and the second substrate are stacked on each other, and further includes: a temperature detection unit arranged in at least one of the first substrate and the second substrate and having an output characteristic depending on a temperature; and a temperature value generating circuit arranged outside the first substrate and configured to convert output from the temperature detection unit into a temperature value signal that is a signal indicating temperature information.

8. 发明授权

US10158816B2 Imaging sensor, imaging system, and moving body having signals amplified in two different accumulation periods 有权
公开(公告)号：US10158816B2
公开(公告)日：2018-12-18
申请号：US15614313
申请日：2017-06-05
申请人： CANON KABUSHIKI KAISHA
发明人： Takashi Muto , Yasuharu Ota
IPC分类号： H04N3/14 , H04N5/369 , H04N5/3745 , H01L27/146 , H04N5/378 , H04N5/335 , G06K9/00
摘要： An imaging sensor is configured to generate a signal that is obtained by amplifying one of a signal corresponding to a first accumulation period and a signal corresponding to a second accumulation period by using amplification factors having different values.

9. 发明授权

US09748303B2 Solid-state image pick-up apparatus, image pick-up system, and method of driving solid-state image pick-up apparatus 有权
公开(公告)号：US09748303B2
公开(公告)日：2017-08-29
申请号：US14746678
申请日：2015-06-22
申请人： CANON KABUSHIKI KAISHA
发明人： Daisuke Inoue , Yasuharu Ota
IPC分类号： H04N5/361 , H01L27/146 , H04N5/359 , H04N5/3745
CPC分类号： H01L27/14643 , H04N5/3597 , H04N5/361 , H04N5/3745
摘要： A solid-state image pick-up apparatus of an example includes a photoelectric conversion portion, a transfer transistor configured to transfer a charge in the photoelectric conversion portion, and a signal output circuit configured to supply selectively a first voltage to turn on the transfer transistor and a second voltage to turn off the transfer transistor to the transfer transistor. The signal output circuit is configured to supply the second voltage having a voltage value selected from two or more different voltage values based on an output signal from a pixel.

10. 发明申请

US20160211292A1 METHOD FOR MANUFACTURING IMAGE PICKUP APPARATUS, AND IMAGE PICKUP APPARATUS 审中-公开
标题翻译：制造图像拾取装置的方法和图像拾取装置
公开(公告)号：US20160211292A1
公开(公告)日：2016-07-21
申请号：US14992243
申请日：2016-01-11
申请人： CANON KABUSHIKI KAISHA
发明人： Shinichiro Shimizu , Hideaki Takada , Yasuharu Ota , Takehiko Soda
IPC分类号： H01L27/146 , H01L21/266
CPC分类号： H01L27/14612 , H01L21/26586 , H01L27/14603 , H01L27/1463 , H01L27/14643 , H01L27/14689
摘要： A method for manufacturing an image pickup apparatus in which a second semiconductor region of first conductive type which becomes a well contact region is disposed adjacent to a first semiconductor region via an element isolation region in a pixel which has a well contact region among a plurality of pixels. A first mask which has openings in a region which becomes a first semiconductor region, an element isolation region disposed between the region which becomes the first semiconductor region and a region which becomes a second semiconductor region, and a region which becomes the second semiconductor region is disposed, and the first semiconductor region is formed in the region which becomes the first semiconductor region by conducting ion implantation of second conductive type at an oblique angle to a normal line of a principal surface using the first mask.
摘要翻译：一种用于制造图像拾取装置的方法，其中成为良好接触区域的第一导电类型的第二半导体区域经由多个像素中的良好接触区域的像素中的元件隔离区域邻近第一半导体区域布置像素。在成为第一半导体区域的区域中具有开口的第一掩模，设置在成为第一半导体区域的区域和成为第二半导体区域的区域之间的元件隔离区域和成为第二半导体区域的区域是并且通过使用第一掩模通过以与主表面的法线成倾斜角度的离子注入第二导电类型而在成为第一半导体区域的区域中形成第一半导体区域。

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