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1. 发明授权

US09431241B2 Method for manufacturing a silicon nitride thin film using plasma-enhanced chemical vapor deposition 有权
标题翻译：使用等离子体增强化学气相沉积制造氮化硅薄膜的方法
公开(公告)号：US09431241B2
公开(公告)日：2016-08-30
申请号：US14411999
申请日：2013-07-30
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Zhanxin Li
IPC分类号： H01L21/02 , C23C16/34 , C23C16/505
CPC分类号： H01L21/02274 , C23C16/345 , C23C16/505 , H01L21/0217 , H01L21/02211
摘要： A method for manufacturing a silicon nitride thin film comprises a step of charging silane, ammonia gas and nitrogen gas at an environment temperature below 350° C. to produce and deposit a silicon nitride thin film, wherein a rate of charging silane is 300-350 sccm, a rate of charging ammonia gas is 1000 sccm, a rate of charging nitrogen gas is 1000 sccm; a power of a high frequency source is 0.15˜0.30 KW, a power of a low frequency source is 0.15˜0.30 KW; a reaction pressure is 2.3˜2.6 Torr; a reaction duration is 4˜6 s. The above method for manufacturing a silicon nitride thin film provides a preferable parameter range and preferred parameters for generating a low-stress SIN thin film at low temperatures, achieves manufacture of a low-stress SIN thin film at low temperatures, and thus, better satisfies the situation requiring a low-stress SIN thin film.
摘要翻译：制造氮化硅薄膜的方法包括在低于350℃的环境温度下加入硅烷，氨气和氮气以产生和沉积氮化硅薄膜的步骤，其中填充硅烷的速率为300-350 sccm，氨气的加入速率为1000sccm，氮气的充填速度为1000sccm; 高频源的功率为0.15〜0.30KW，低频源的功率为0.15〜0.30KW; 反应压力为2.3〜2.6乇; 反应时间为4〜6秒。上述制造氮化硅薄膜的方法提供了优选的参数范围和用于在低温下产生低应力SIN薄膜的优选参数，在低温下实现了低应力SIN薄膜的制造，从而更好地满足需要低应力SIN薄膜的情况。

2. 发明申请

US20150179437A1 METHOD FOR MANUFACTURING A SILICON NITRIDE THIN FILM 有权
标题翻译：用于制造氮化硅薄膜的方法
公开(公告)号：US20150179437A1
公开(公告)日：2015-06-25
申请号：US14411999
申请日：2013-07-30
申请人： CSMC TECHNOLOGIES FAB1 CO., LTD.
发明人： Zhanxin Li
IPC分类号： H01L21/02
CPC分类号： H01L21/02274 , C23C16/345 , C23C16/505 , H01L21/0217 , H01L21/02211
摘要： A method for manufacturing a silicon nitride thin film comprises a step of charging silane, ammonia gas and nitrogen gas at an environment temperature below 350° C. to produce and deposit a silicon nitride thin film, wherein a rate of charging silane is 300-350 sccm, a rate of charging ammonia gas is 1000 sccm, a rate of charging nitrogen gas is 1000 sccm; a power of a high frequency source is 0.15˜0.30 KW, a power of a low frequency source is 0.15˜0.30 KW; a reaction pressure is 2.3˜2.6 Torr; a reaction duration is 4˜6 s. The above method for manufacturing a silicon nitride thin film provides a preferable parameter range and preferred parameters for generating a low-stress SIN thin film at low temperatures, achieves manufacture of a low-stress SIN thin film at low temperatures, and thus, better satisfies the situation requiring a low-stress SIN thin film.
摘要翻译：制造氮化硅薄膜的方法包括在低于350℃的环境温度下加入硅烷，氨气和氮气以产生和沉积氮化硅薄膜的步骤，其中填充硅烷的速率为300-350 sccm，氨气的加入速率为1000sccm，氮气的充填速度为1000sccm; 高频源的功率为0.15〜0.30KW，低频源的功率为0.15〜0.30KW; 反应压力为2.3〜2.6乇; 反应时间为4〜6秒。上述制造氮化硅薄膜的方法提供了优选的参数范围和用于在低温下产生低应力SIN薄膜的优选参数，在低温下实现了低应力SIN薄膜的制造，从而更好地满足需要低应力SIN薄膜的情况。

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