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1. 发明授权

US09929021B2 Dry etching method and dry etching agent 有权
公开(公告)号：US09929021B2
公开(公告)日：2018-03-27
申请号：US15264208
申请日：2016-09-13
申请人： Central Glass Company, Limited
发明人： Hiroyuki Oomori , Akifumi Yao
IPC分类号： H01L21/311 , H01L21/02
CPC分类号： H01L21/31122 , H01L21/02118 , H01L21/02211 , H01L21/02252 , H01L21/31144
摘要： A dry etching method provided to involve the steps of: (a) disposing a substrate within a chamber, the substrate having an amorphous carbon film; (b) preparing a plasma gas by converting a dry etching agent into a plasma, the dry etching agent containing at least oxygen and alkylsilane; and (c) conducting plasma etching on the amorphous carbon film by using the plasma gas and an inorganic film as a mask.

2. 发明申请

US20140326596A1 Fluorine Gas Generation Apparatus 审中-公开
标题翻译：氟气生成装置
公开(公告)号：US20140326596A1
公开(公告)日：2014-11-06
申请号：US14358630
申请日：2012-10-31
申请人： Central Glass Company, Limited
发明人： Tatsuya Irie , Akifumi Yao
IPC分类号： C25B15/02 , C25B1/24
CPC分类号： C25B15/02 , C01B7/20 , C25B1/245 , C25B9/00 , C25B15/08
摘要： A fluorine gas generating device comprises an electrolytic tank that generates at an anode side a main-product containing as a main component fluorine gas and at a cathode side a by-product gas containing as a main component hydrogen gas by subjecting, in an electrolytic bath, hydrogen fluoride in a molten salt containing therein hydrogen fluoride to an electrolysis; a hydrogen fluoride supply source that stores therein hydrogen fluoride that is to be fed to the electrolytic tank to fill up hydrogen fluoride; a hydrogen fluoride supply passage through which hydrogen fluoride flows from the hydrogen fluoride supply source to the electrolytic tank; and a vaporizer that is connected to the hydrogen fluoride supply passage to vaporize hydrogen fluoride supplied from the hydrogen fluoride supply source.
摘要翻译：氟气发生装置包括：电解槽，其在阳极侧产生以主要成分为氟气的主要成分，在阴极侧产生含有作为主要成分的氢气的副产物，在电解槽在其中含有氟化氢的熔融盐中的氟化氢进行电解; 其中存储有要供给到电解槽以填充氟化氢的氟化氢的氟化氢供应源; 氟化氢供应通道，氟化氢从氟化氢供应源流到电解槽; 以及蒸发器，其与氟化氢供给通道连接以蒸发从氟化氢供应源供应的氟化氢。

3. 发明授权

US11519557B2 Method for manufacturing filled container, and filled container 有权
公开(公告)号：US11519557B2
公开(公告)日：2022-12-06
申请号：US16625963
申请日：2018-07-24
申请人： Central Glass Company, Limited
发明人： Akifumi Yao , Masakiyo Nagatomo , Shinya Ikeda
IPC分类号： F17C13/00 , F17C1/10 , C23C8/08 , C23F11/00
摘要： The method for producing a filled container of the present invention includes: providing a metal storage container, at least an inner surface of which is formed of a manganese steel and in which the inner surface has a surface roughness Rmax of 10 μm or less; performing fluorination by bringing the inner surface of the storage container into contact with a gas containing at least one first fluorine-containing gas selected from the group consisting of ClF3, IF7, BrF5, F2, and WF6 at 50° C. or lower; purging the inside of the storage container with an inert gas; and filling the inside of the storage container with at least one second fluorine-containing gas selected from the group consisting of ClF3, IF7, BrF5, F2, and WF6.

4. 发明授权

US11335573B2 Dry etching method and β-diketone-filled container 有权
公开(公告)号：US11335573B2
公开(公告)日：2022-05-17
申请号：US16461448
申请日：2017-12-20
申请人： Central Glass Company, Limited
发明人： Kunihiro Yamauchi , Takashi Masuda , Akifumi Yao
IPC分类号： H01L21/67 , C23F1/12 , C23F4/02 , H01L21/302 , H01L21/3213
摘要： Disclosed is a dry etching method for etching a metal film on a substrate with an etching gas containing a β-diketone and an additive gas, wherein the metal film contains a metal element capable of forming a complex with the β-diketone; and wherein the amount of water contained in the etching gas is 30 mass ppm or less relative to the amount of the β-diketone. It is preferable that the β-diketone used for the dry etching method is supplied from a β-diketone filled container, wherein the β-diketone filled container has a sealed container body filled with a β-diketone whose water content is 15 mass ppm or less relative to the β-diketone. This etching method enables etching of the metal film while suppressing etching rate variations from the initial stage to the later stage of use of the filled container.

5. 发明授权

US11049729B2 Dry etching method, semiconductor device manufacturing method, and chamber cleaning method 有权
公开(公告)号：US11049729B2
公开(公告)日：2021-06-29
申请号：US16480385
申请日：2018-03-19
申请人： Central Glass Company, Limited
发明人： Shoi Suzuki , Akifumi Yao
IPC分类号： C23F4/02 , H01L21/3213 , H01L43/12 , H01L27/22
摘要： Disclosed is a dry etching method which includes: a first step of bringing a processing gas containing a fluorine-containing interhalogen compound into contact with a material containing a specific metal element at a reaction temperature of 0° C. to 100° C., thereby forming a reaction product of the specific metal element and the fluorine-containing interhalogen compound as a solid product; and a second step of evaporating the solid product by heating the solid product in an inert gas atmosphere or vacuum atmosphere at a temperature higher than the reaction temperature of the first step, wherein the specific metal element is one or more kinds of elements selected from the group consisting of Ru, Ta, and Nb.

6. 发明授权

US10957554B2 Etching method and etching device 有权
公开(公告)号：US10957554B2
公开(公告)日：2021-03-23
申请号：US16461600
申请日：2017-12-20
申请人： Central Glass Company, Limited
发明人： Kunihiro Yamauchi , Takashi Masuda , Akifumi Yao
IPC分类号： H01L21/311 , C23F1/12 , H01L21/3213 , H01L21/67 , H01L21/02
摘要： Disclosed is a dry etching method for etching a metal film on a substrate with the use of an etching gas, wherein the etching gas contains a β-diketone and first and second additive gases; wherein the metal film contains a metal element capable of forming a complex with the β-diketone; wherein the first additive gas is at least one kind of gas selected from the group consisting of NO, NO2, O2 and O3; wherein the second additive gas is at least one kind of gas selected from the group consisting of H2O and H2O2; wherein the amount of the β-diketone contained is 10 vol % to 90 vol % relative to the etching gas; and wherein the amount of the second additive gas contained is 0.1 vol % to 15 vol % relative to the etching gas. The etching rate of the metal film is increased by this etching method.

7. 发明授权

US10926211B2 Method for purifying fluorine compound gas 有权
公开(公告)号：US10926211B2
公开(公告)日：2021-02-23
申请号：US16076536
申请日：2017-01-27
申请人： Central Glass Company, Limited
发明人： Akifumi Yao , Kohei Ooya , Yuta Takeda , Jun Eto
IPC分类号： B01D53/02 , B01D53/04 , C01D15/04 , C01B7/24 , C01D3/02
摘要： Disclosed is a purification method for removing a metal component from a fluorine compound gas containing hydrogen fluoride and a metal component. This method includes a removing step for removing the hydrogen fluoride and the metal component therefrom by bringing the fluorine compound gas into contact with a solid metal fluoride to adsorb the hydrogen fluoride and the metal component on the metal fluoride. It is preferable for the fluorine compound gas to contain at least one kind selected from the group consisting of CIF, CIF3, IF5, IF7, BrF3, BrF5, NF3, WF6, SiF4, CF4, SF6 and BF3. It is also preferable for the metal fluoride to be an alkali metal fluoride or an alkali earth metal fluoride. Surprisingly, the presence of hydrogen fluoride in a fluorine compound gas makes it possible to remove a metal component therefrom as an impurity as a result of adsorption thereof by a metal fluoride.

8. 发明授权

US11618954B2 Dry etching method, method for manufacturing semiconductor device, and etching device 有权
公开(公告)号：US11618954B2
公开(公告)日：2023-04-04
申请号：US17434898
申请日：2020-02-19
申请人： CENTRAL GLASS COMPANY, LIMITED
发明人： Yuuta Takeda , Kunihiro Yamauchi , Akifumi Yao
IPC分类号： C23F4/00 , C23F1/12 , H01L21/302 , H01L21/3213 , H01L21/311 , C23F1/00 , H01L21/02
摘要： The dry etching method of the present invention etches a metal film formed on a surface of a workpiece by bringing etching gases each containing a β-diketone into contact with the metal film. The method includes: a first etching step of bringing a first etching gas containing a first β-diketone into contact with the metal film; and a second etching step of bringing a second etching gas containing a second β-diketone into contact with the metal film after the first etching step. The first β-diketone is a compound capable of forming a first complex through a reaction with the metal film. The second β-diketone is a compound capable of forming a second complex having a lower sublimation point than the first complex through a reaction with the metal film.

9. 发明授权

US11447697B2 Substrate processing gas, storage container, and substrate processing method 有权
公开(公告)号：US11447697B2
公开(公告)日：2022-09-20
申请号：US17040803
申请日：2019-03-05
申请人： CENTRAL GLASS COMPANY, LIMITED
发明人： Akifumi Yao , Yuuta Takeda , Jun Eto
IPC分类号： C09K13/00 , C01B7/24 , H01L21/3065 , H01L21/3213
摘要： A substrate processing gas of the present invention contains IF5; and IF7, in which a content of the IF5 is equal to or more than 1 ppm and equal to or less than 2% on a volume basis with respect to a total amount of the IF5 and the IF7.

10. 发明申请

US20220172956A1 DRY ETCHING METHOD 有权
公开(公告)号：US20220172956A1
公开(公告)日：2022-06-02
申请号：US17677367
申请日：2022-02-22
申请人： Central Glass Company, Limited
发明人： Shoi SUZUKI , Akifumi Yao
IPC分类号： H01L21/311 , C09K13/08 , C23F1/12 , H01L21/3065
摘要： A dry etching method according to the present invention includes etching silicon nitride by bringing a mixed gas containing hydrogen fluoride and a fluorine-containing carboxylic acid into contact with the silicon nitride in a plasma-less process at a temperature lower than 100° C. Preferably, the amount of the fluorine-containing carboxylic acid contained is 0.01 vol % or more based on the total amount of the hydrogen fluoride and the fluorine-containing carboxylic acid. Examples of the fluorine-containing carboxylic acid are monofluoroacetic acid, difluoroacetic acid, trifluoroacetic acid, difluoropropionic acid, pentafluoropropionic acid, pentafluorobutyric acid and the like. This dry etching method enables etching of the silicon nitride at a high etching rate and shows a high selectivity ratio of the silicon nitride to silicon oxide and polycrystalline silicon while preventing damage to the silicon oxide.

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