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1. 发明申请

US20130095591A1 MANUFACTURING METHOD OF SOLID STATE LIGHT EMITTING ELEMENT 有权
标题翻译：固态发光元件的制造方法
公开(公告)号：US20130095591A1
公开(公告)日：2013-04-18
申请号：US13443374
申请日：2012-04-10
申请人： Chang-Chin Yu , Mong-Ea Lin
发明人： Chang-Chin Yu , Mong-Ea Lin
IPC分类号： H01L33/02
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02664 , H01L21/30612 , H01L33/0079
摘要： A manufacturing method of a solid state light emitting element is provided. A plurality of protrusion structures separated to each other are formed on a first substrate. A buffer layer is formed on the protrusion structures and fills the gaps between protrusion structures. An epitaxial growth layer is formed on the buffer layer to form a first semiconductor stacking structure. The first semiconductor stacking structure is inverted to a second substrate, so that the first semiconductor epitaxial layer and the second substrate are connected to form a second semiconductor stacking structure. The buffer layer is etched by a first etchant solution to form a third semiconductor stacking structure. A second etchant solution is used to permeate through the gaps between the protrusion structures, so that the protrusion structures are etched completely. The first substrate is removed from the third semiconductor stacking structure to form a fourth semiconductor stacking structure.
摘要翻译：提供了一种固态发光元件的制造方法。在第一基板上形成有彼此分离的多个突起结构。在突起结构上形成缓冲层，并填充突起结构之间的间隙。在缓冲层上形成外延生长层，形成第一半导体堆叠结构。第一半导体堆叠结构被反转到第二衬底，使得第一半导体外延层和第二衬底连接以形成第二半导体堆叠结构。通过第一蚀刻溶液蚀刻缓冲层以形成第三半导体堆叠结构。使用第二蚀刻剂溶液渗透通过突出结构之间的间隙，使得突出结构被完全蚀刻。从第三半导体堆叠结构去除第一衬底以形成第四半导体堆叠结构。

2. 发明授权

US08610139B2 Solid state light source module and array thereof 有权
标题翻译：固态光源模块及其阵列
公开(公告)号：US08610139B2
公开(公告)日：2013-12-17
申请号：US13448643
申请日：2012-04-17
申请人： Chang-Chin Yu , Mong-Ea Lin
发明人： Chang-Chin Yu , Mong-Ea Lin
IPC分类号： H01L33/48
CPC分类号： H01L33/08 , F21V19/003 , H01L25/0753 , H01L25/0756 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01L2924/00
摘要： A solid state light source array including a transparent substrate and N rows of solid state light emitting element series is provided. Each row of the solid state light emitting element series includes M solid state light emitting elements connected in series, wherein N, M are integers and N≧1, M≧2. Each of the solid state emitting elements includes a first type electrode pad and a second type electrode pad. The first and the Mth solid state emitting elements of each row of the solid state light emitting element series are electrically connected to a first conductive line and a second conductive line located on the edges of the first surface via the first type electrode pad and the second type electrode pad, respectively. The first conductive line and the second conductive line are physically disconnected.
摘要翻译：提供了包括透明基板和N行固态发光元件系列的固态光源阵列。固态发光元件系列的每一行包括串联连接的M个固态发光元件，其中N，M为整数，N> = 1，M> = 2。每个固体发射元件包括第一类型电极焊盘和第二类型电极焊盘。固态发光元件系列的每一行的第一和第M固体发射元件经由第一类型电极焊盘电连接到位于第一表面的边缘上的第一导电线和第二导线，型电极焊盘。第一导线和第二导线物理断开。

3. 发明授权

US08574935B2 Manufacturing method of solid state light emitting element 有权
标题翻译：固态发光元件的制造方法
公开(公告)号：US08574935B2
公开(公告)日：2013-11-05
申请号：US13443374
申请日：2012-04-10
申请人： Chang-Chin Yu , Mong-Ea Lin
发明人： Chang-Chin Yu , Mong-Ea Lin
IPC分类号： H01L51/50 , H01L51/52 , H01L51/54 , H01L51/56
CPC分类号： H01L33/007 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02642 , H01L21/02664 , H01L21/30612 , H01L33/0079
摘要： A manufacturing method of a solid state light emitting element is provided. A plurality of protrusion structures separated to each other are formed on a first substrate. A buffer layer is formed on the protrusion structures and fills the gaps between protrusion structures. An epitaxial growth layer is formed on the buffer layer to form a first semiconductor stacking structure. The first semiconductor stacking structure is inverted to a second substrate, so that the first semiconductor epitaxial layer and the second substrate are connected to form a second semiconductor stacking structure. The buffer layer is etched by a first etchant solution to form a third semiconductor stacking structure. A second etchant solution is used to permeate through the gaps between the protrusion structures, so that the protrusion structures are etched completely. The first substrate is removed from the third semiconductor stacking structure to form a fourth semiconductor stacking structure.
摘要翻译：提供了一种固态发光元件的制造方法。在第一基板上形成有彼此分离的多个突起结构。在突起结构上形成缓冲层，并填充突起结构之间的间隙。在缓冲层上形成外延生长层，形成第一半导体堆叠结构。第一半导体堆叠结构被反转到第二衬底，使得第一半导体外延层和第二衬底连接以形成第二半导体堆叠结构。通过第一蚀刻溶液蚀刻缓冲层以形成第三半导体堆叠结构。使用第二蚀刻剂溶液渗透通过突出结构之间的间隙，使得突出结构被完全蚀刻。从第三半导体堆叠结构去除第一衬底以形成第四半导体堆叠结构。

4. 发明申请

US20120299013A1 SEMICONDUCTOR LIGHT EMITTING STRUCTURE 有权
标题翻译：半导体发光结构
公开(公告)号：US20120299013A1
公开(公告)日：2012-11-29
申请号：US13314340
申请日：2011-12-08
申请人： Chang-Chin Yu , Mong-Ea Lin
发明人： Chang-Chin Yu , Mong-Ea Lin
IPC分类号： H01L33/02 , H01L33/22
CPC分类号： H01L33/20 , H01L2933/0091
摘要： A semiconductor light emitting structure including a substrate, a patterned structure, a first semiconductor layer, an active layer and a second semiconductor layer is provided. The patterned structure is protruded from or indented into a surface of the substrate, so that the surface of the substrate becomes a roughed surface. The patterned structure has an asymmetrical geometric shape. The first semiconductor layer is disposed on the roughed surface. The active layer is disposed on the first semiconductor layer. The second semiconductor is disposed on the active layer.
摘要翻译：提供了包括基板，图案化结构，第一半导体层，有源层和第二半导体层的半导体发光结构。图案化结构从衬底的表面突出或缩进，使得衬底的表面变成粗糙表面。图案化结构具有不对称的几何形状。第一半导体层设置在粗糙表面上。有源层设置在第一半导体层上。第二半导体设置在有源层上。

5. 发明授权

US08648352B2 Semiconductor light emitting structure 有权
标题翻译：半导体发光结构
公开(公告)号：US08648352B2
公开(公告)日：2014-02-11
申请号：US13314340
申请日：2011-12-08
申请人： Chang-Chin Yu , Mong-Ea Lin
发明人： Chang-Chin Yu , Mong-Ea Lin
IPC分类号： H01L29/15
CPC分类号： H01L33/20 , H01L2933/0091
摘要： A semiconductor light emitting structure including a substrate, a patterned structure, a first semiconductor layer, an active layer and a second semiconductor layer is provided. The patterned structure is protruded from or indented into a surface of the substrate, so that the surface of the substrate becomes a roughed surface. The patterned structure has an asymmetrical geometric shape. The first semiconductor layer is disposed on the roughed surface. The active layer is disposed on the first semiconductor layer. The second semiconductor is disposed on the active layer.
摘要翻译：提供了包括基板，图案化结构，第一半导体层，有源层和第二半导体层的半导体发光结构。图案化结构从衬底的表面突出或缩进，使得衬底的表面变成粗糙表面。图案化结构具有不对称的几何形状。第一半导体层设置在粗糙表面上。有源层设置在第一半导体层上。第二半导体设置在有源层上。

6. 发明授权

US08409894B2 Solid state light emitting semiconductor structure and epitaxy growth method thereof 有权
标题翻译：固态发光半导体结构及其外延生长方法
公开(公告)号：US08409894B2
公开(公告)日：2013-04-02
申请号：US13443446
申请日：2012-04-10
申请人： Chang-Chin Yu , Mong-Ea Lin
发明人： Chang-Chin Yu , Mong-Ea Lin
IPC分类号： H01L21/00
CPC分类号： H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/12 , H01L33/20
摘要： A solid state light emitting semiconductor structure and an epitaxy growth method thereof are provided. The method includes the following steps: A substrate is provided. A plurality of protrusions separated from each other are formed on the substrate. A buffer layer is formed on the protrusions, and fills or partially fills the gaps between the protrusions. A semiconductor epitaxy stacking layer is formed on the buffer layer, wherein the semiconductor epitaxy stacking layer is constituted by a first type semiconductor layer, an active layer and a second type semiconductor layer in sequence.
摘要翻译：提供固态发光半导体结构及其外延生长方法。该方法包括以下步骤：提供基板。在基板上形成有彼此分离的多个突起。在突起上形成缓冲层，并且填充或部分地填充突起之间的间隙。在缓冲层上形成半导体外延层叠层，其中半导体外延堆叠层依次由第一类型半导体层，有源层和第二类型半导体层构成。

7. 发明申请

US20130062634A1 SOLID STATE LIGHT SOURCE MODULE AND ARRAY THEREOF 有权
标题翻译：固态光源模块及其阵列
公开(公告)号：US20130062634A1
公开(公告)日：2013-03-14
申请号：US13448643
申请日：2012-04-17
申请人： Chang-Chin Yu , Mong-Ea Lin
发明人： Chang-Chin Yu , Mong-Ea Lin
IPC分类号： H01L33/08
CPC分类号： H01L33/08 , F21V19/003 , H01L25/0753 , H01L25/0756 , H01L33/62 , H01L33/647 , H01L2924/0002 , H01L2924/00
摘要： A solid state light source array including a transparent substrate and N rows of solid state light emitting element series is provided. Each row of the solid state light emitting element series includes M solid state light emitting elements connected in series, wherein N, M are integrals and N≧1, M≧2. Each of the solid state emitting elements includes a first type electrode pad and a second type electrode pad. The first and the Mth solid state emitting elements of each row of the solid state light emitting element series are electrically connected to a first conductive line and a second conductive line located on the edges of the first surface via the first type electrode pad and the second type electrode pad, respectively. The first conductive line and the second conductive line are physically disconnected.
摘要翻译：提供了包括透明基板和N行固态发光元件系列的固态光源阵列。固态发光元件系列的各行包括串联连接的M个固态发光元件，其中N，M为积分，N≥1，M≥2。每个固体发射元件包括第一类型电极焊盘和第二类型电极焊盘。固态发光元件系列的每一行的第一和第M固体发射元件经由第一类型电极焊盘电连接到位于第一表面的边缘上的第一导电线和第二导线，型电极焊盘。第一导线和第二导线物理断开。

8. 发明申请

US20130048941A1 SOLID STATE LIGHT EMITTING SEMICONDUCTOR STRUCTURE AND EPITAXY GROWTH METHOD THEREOF 有权
标题翻译：固态发光半导体结构及其外延生长方法
公开(公告)号：US20130048941A1
公开(公告)日：2013-02-28
申请号：US13443446
申请日：2012-04-10
申请人： Chang-Chin Yu , Mong-Ea Lin
发明人： Chang-Chin Yu , Mong-Ea Lin
IPC分类号： H01L33/06 , H01L29/06 , B82Y40/00
CPC分类号： H01L21/02458 , H01L21/0254 , H01L21/02639 , H01L21/0265 , H01L33/007 , H01L33/12 , H01L33/20
摘要： A solid state light emitting semiconductor structure and an epitaxy growth method thereof are provided. The method includes the following steps: A substrate is provided. A plurality of protrusions separated from each other are formed on the substrate. A buffer layer is formed on the protrusions, and fills or partially fills the gaps between the protrusions. A semiconductor epitaxy stacking layer is formed on the buffer layer, wherein the semiconductor epitaxy stacking layer is constituted by a first type semiconductor layer, an active layer and a second type semiconductor layer in sequence.
摘要翻译：提供固态发光半导体结构及其外延生长方法。该方法包括以下步骤：提供基板。在基板上形成有彼此分离的多个突起。在突起上形成缓冲层，并且填充或部分地填充突起之间的间隙。半导体外延堆叠层形成在缓冲层上，其中半导体外延堆叠层依次由第一类型半导体层，有源层和第二类型半导体层构成。

9. 发明申请

US20060081858A1 Light emitting device with omnidirectional reflectors 审中-公开
标题翻译：具有全向反射器的发光装置
公开(公告)号：US20060081858A1
公开(公告)日：2006-04-20
申请号：US10965579
申请日：2004-10-14
申请人： Chung-Hsiang Lin , Chang-Chin Yu , Jun-Ren Lo
发明人： Chung-Hsiang Lin , Chang-Chin Yu , Jun-Ren Lo
IPC分类号： H01L33/00
CPC分类号： H01L33/46 , H01L2933/0083
摘要： A light emitting device includes a semiconductor structure having lateral side faces, and including a light-generating layer, and two omnidirectional reflectors disposed respectively at two sides of the light-generating layer. Each of the omnidirectional reflectors exhibits a periodic variation indielectric constant in such a manner so as to introduce an omnidirectional photonic band gap in a given frequency range such that the radiation generated by the light-generating layer in the frequency range for all incident angles and polarizations can be totally reflected by the omnidirectional reflectors and can be extracted substantially only from the lateral side faces of the semiconductor structure.
摘要翻译：发光器件包括具有侧面的半导体结构，并且包括发光层，以及分别设置在发光层两侧的两个全向反射器。每个全向反射器以这样的方式表现出周期性变化的独立常数，以便在给定频率范围内引入全向光子带隙，使得由所述入射角和极化的频率范围内的光产生层产生的辐射可以被全向反射器全反射，并且可以仅从半导体结构的侧面侧基本上提取。

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