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    • 10. 发明授权
    • High voltage transfer circuit and row decoder circuit comprising a high voltage transfer circuit
    • 高电压传输电路和行解码电路包括高电压传输电路
    • US07515503B2
    • 2009-04-07
    • US11634061
    • 2006-12-06
    • Jong-Hoon LeeYong-Taek JeongJin-Kook Kim
    • Jong-Hoon LeeYong-Taek JeongJin-Kook Kim
    • G11C8/00
    • G11C8/08G11C11/419G11C16/08G11C16/12
    • Embodiments of the invention provide a high voltage transfer circuit, a row decoder circuit comprising the high voltage transfer circuit, and a non-volatile semiconductor memory device comprising the high voltage transfer circuit. In one embodiment, the invention provides a high voltage transfer circuit of a semiconductor memory device comprising a high voltage switch comprising a high voltage transistor comprising a first terminal connected to a boosted voltage via a first depletion-type transistor and comprising a second terminal connected to an output node via a second depletion-type transistor. The high voltage transfer circuit further comprises a driver circuit adapted to drive the first and second depletion-type transistors and the high voltage transistor in response to an input signal.
    • 本发明的实施例提供一种高电压传输电路,包括高压传输电路的行解码器电路和包括高电压传输电路的非易失性半导体存储器件。 在一个实施例中,本发明提供了一种半导体存储器件的高电压传输电路,其包括高压开关,其包括高压晶体管,该高压晶体管包括经由第一耗尽型晶体管连接到升压电压的第一端子,并且包括连接到 经由第二耗尽型晶体管的输出节点。 高电压传输电路还包括适于响应于输入信号驱动第一和第二耗尽型晶体管和高压晶体管的驱动器电路。