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1. 发明授权

US08378402B2 CMOS image sensors including backside illumination structure and method of manufacturing image sensor 有权
标题翻译： CMOS图像传感器包括背面照明结构和图像传感器的制造方法
公开(公告)号：US08378402B2
公开(公告)日：2013-02-19
申请号：US13438340
申请日：2012-04-03
申请人： Chang-Rok Moon , Duck-hyung Lee , Seong-ho Cho
发明人： Chang-Rok Moon , Duck-hyung Lee , Seong-ho Cho
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.
摘要翻译：具有背面照明结构的图像传感器可以包括第一晶片中的光电二极管单元，其中光电二极管单元包括耦合到相应的光电二极管的光电二极管和传输栅极晶体管。布线线单元可以包括在结合到光电二极管单元的第二晶片上，其中布线单元包括布线和晶体管，其被配置为处理由光电二极管单元提供并被配置为控制光电二极管单元的信号。支撑基板被接合到布线单元，并且滤波单元位于第一晶片下方。

2. 发明授权

US08164126B2 CMOS image sensors including backside illumination structure 有权
标题翻译： CMOS图像传感器包括背面照明结构
公开(公告)号：US08164126B2
公开(公告)日：2012-04-24
申请号：US12037691
申请日：2008-02-26
申请人： Chang-Rok Moon , Duck-hyung Lee , Seong-ho Cho
发明人： Chang-Rok Moon , Duck-hyung Lee , Seong-ho Cho
IPC分类号： H01L31/062
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.
摘要翻译：具有背面照明结构的图像传感器可以包括第一晶片中的光电二极管单元，其中光电二极管单元包括耦合到相应的光电二极管的光电二极管和传输栅极晶体管。布线线单元可以包括在结合到光电二极管单元的第二晶片上，其中布线单元包括布线和晶体管，其被配置为处理由光电二极管单元提供并被配置为控制光电二极管单元的信号。支撑基板被接合到布线单元，并且滤波单元位于第一晶片下方。

3. 发明申请

US20080203452A1 CMOS IMAGE SENSORS INCLUDING BACKSIDE ILLUMINATION STRUCTURE AND METHOD OF MANUFACTURING IMAGE SENSOR 有权
标题翻译： CMOS图像传感器，包括背光照明结构和制造图像传感器的方法
公开(公告)号：US20080203452A1
公开(公告)日：2008-08-28
申请号：US12037691
申请日：2008-02-26
申请人： Chang-Rok Moon , Duck-hyung Lee , Seong-ho Cho
发明人： Chang-Rok Moon , Duck-hyung Lee , Seong-ho Cho
IPC分类号： H01L27/146 , H01L31/18
CPC分类号： H01L27/14603 , H01L27/14621 , H01L27/14627 , H01L27/1464
摘要： An image sensor having a backside illumination structure can include a photo diode unit in a first wafer, where the photo diode unit includes photo diodes and transfer gate transistors coupled to respective ones of the photo diodes. A wiring line unit can be included on a second wafer that is bonded to the photo diode unit, where the wiring line unit includes wiring lines and transistors configured to process signals provided by the photo diode unit and configured to control the photo diode unit. A supporting substrate is bonded to the wiring line unit and a filter unit is located under the first wafer.
摘要翻译：具有背面照明结构的图像传感器可以包括第一晶片中的光电二极管单元，其中光电二极管单元包括耦合到相应的光电二极管的光电二极管和传输栅极晶体管。布线线单元可以包括在结合到光电二极管单元的第二晶片上，其中布线单元包括布线和晶体管，其被配置为处理由光电二极管单元提供并被配置为控制光电二极管单元的信号。支撑基板被接合到布线单元，并且滤波单元位于第一晶片下方。

4. 发明申请

US20070187793A1 FILTER, COLOR FILTER ARRAY, METHOD OF MANUFACTURING THE COLOR FILTER ARRAY, AND IMAGE SENSOR 有权
标题翻译：过滤器，彩色过滤器阵列，制造彩色滤光片阵列的方法和图像传感器
公开(公告)号：US20070187793A1
公开(公告)日：2007-08-16
申请号：US11668120
申请日：2007-01-29
申请人： Chang-rok Moon , Koe-hyun Paik , Duck-hyung Lee , Sung-ho Hwang
发明人： Chang-rok Moon , Koe-hyun Paik , Duck-hyung Lee , Sung-ho Hwang
IPC分类号： H01L31/00 , G02B5/20
CPC分类号： G02B5/201 , G02B5/285 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14685
摘要： Provided are color filters formed of alternately stacked inorganic materials having different refractive indices, a color filter array, a method of manufacturing the color filter array, and an image sensor. A color filter can include a substrate and first and second inorganic films configured to filter light of a specific wavelength corresponding to a predetermined color, wherein the first and second inorganic films can be alternately stacked on the substrate and have different refractive indices from each other. The refractive index difference between the first inorganic film and the second inorganic film is at least 0.8. The color filter can be formed by alternately stacking the first and second inorganic films. The first inorganic film and the second inorganic film can have a refractive index of 1.3 to 6.0 in a visible light region of 400 to 700 nm, and can be formed of a material selected from the group consisting of SiO2, SiON, SiN, and Si.
摘要翻译：提供了由具有不同折射率的交替堆叠的无机材料形成的滤色器，滤色器阵列，制造滤色器阵列的方法和图像传感器。滤色器可以包括基板和被配置为过滤对应于预定颜色的特定波长的光的第一和第二无机膜，其中第一和第二无机膜可以交替堆叠在基板上并且具有彼此不同的折射率。第一无机膜与第二无机膜的折射率差为0.8以上。可以通过交替堆叠第一和第二无机膜来形成滤色器。第一无机膜和第二无机膜在400〜700nm的可见光区域的折射率可以为1.3〜6.0，可以由选自SiO 2 2 ，SiON，SiN和Si。

5. 发明申请

US20080036022A1 Image sensor and method of manufacturing the same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20080036022A1
公开(公告)日：2008-02-14
申请号：US11785196
申请日：2007-04-16
申请人： Sung-ho Hwang , Duck-hyung Lee , Chang-rok Moon
发明人： Sung-ho Hwang , Duck-hyung Lee , Chang-rok Moon
IPC分类号： H01L31/052 , H01L31/18
CPC分类号： H01L27/14685 , H01L27/1462 , H01L27/1464
摘要： An image sensor and a method of manufacturing same is disclosed. The image sensor implements a reflecting film formed on a front surface of a substrate having a back-illuminated photodetector. The reflecting film operates to reflect wavelengths of light that were not received by the photodetector back to the photodetector to increase the overall sensitivity of the image detector. The reflective film is formed by layering different thicknesses of material with different indices of refraction, resulting in a high reflectance.
摘要翻译：公开了一种图像传感器及其制造方法。图像传感器实现形成在具有背照式光电检测器的基板的前表面上的反射膜。反射膜操作以将未被光电检测器接收的光的波长反射回到光电检测器以增加图像检测器的整体灵敏度。反射膜通过分层具有不同折射率的不同厚度的材料形成，导致高反射率。

6. 发明授权

US07875947B2 Filter, color filter array, method of manufacturing the color filter array, and image sensor 有权
标题翻译：过滤器，滤色器阵列，制造滤色器阵列的方法和图像传感器
公开(公告)号：US07875947B2
公开(公告)日：2011-01-25
申请号：US11668120
申请日：2007-01-29
申请人： Chang-rok Moon , Koe-hyun Paik , Duck-hyung Lee , Sung-ho Hwang
发明人： Chang-rok Moon , Koe-hyun Paik , Duck-hyung Lee , Sung-ho Hwang
IPC分类号： H01L27/146 , H01L31/0232
CPC分类号： G02B5/201 , G02B5/285 , H01L27/14609 , H01L27/14621 , H01L27/14627 , H01L27/14685
摘要： Provided are color filters formed of alternately stacked inorganic materials having different refractive indices, a color filter array, a method of manufacturing the color filter array, and an image sensor. A color filter can include a substrate and first and second inorganic films configured to filter light of a specific wavelength corresponding to a predetermined color, wherein the first and second inorganic films can be alternately stacked on the substrate and have different refractive indices from each other. The refractive index difference between the first inorganic film and the second inorganic film is at least 0.8. The color filter can be formed by alternately stacking the first and second inorganic films. The first inorganic film and the second inorganic film can have a refractive index of 1.3 to 6.0 in a visible light region of 400 to 700 nm, and can be formed of a material selected from the group consisting of SiO2, SiON, SiN, and Si.
摘要翻译：提供了由具有不同折射率的交替堆叠的无机材料形成的滤色器，滤色器阵列，制造滤色器阵列的方法和图像传感器。滤色器可以包括基板和被配置为过滤对应于预定颜色的特定波长的光的第一和第二无机膜，其中第一和第二无机膜可以交替堆叠在基板上并且具有彼此不同的折射率。第一无机膜与第二无机膜的折射率差为0.8以上。可以通过交替堆叠第一和第二无机膜来形成滤色器。第一无机膜和第二无机膜在400〜700nm的可见光区域的折射率可以为1.3〜6.0，可以由选自SiO 2，SiON，SiN和Si的材料形成。

7. 发明申请

US20080036024A1 Image sensors and methods of manufacturing the same 审中-公开
标题翻译：图像传感器及其制造方法
公开(公告)号：US20080036024A1
公开(公告)日：2008-02-14
申请号：US11889122
申请日：2007-08-09
申请人： Sung-ho Hwang , Duck-hyung Lee , Seong-sue Kim , Hong-ki Kim , Chang-rok Moon , Yun-ki Lee
发明人： Sung-ho Hwang , Duck-hyung Lee , Seong-sue Kim , Hong-ki Kim , Chang-rok Moon , Yun-ki Lee
IPC分类号： H01L31/0232 , H01L21/00
CPC分类号： H01L27/14627 , H01L27/14621 , H01L27/14645
摘要： An image sensor may include a semiconductor substrate having unit pixel regions on the semiconductor substrate; photoelectric converters formed in the unit pixel regions; interlayer insulating films covering the photoelectric converters and having opening portions formed above the photoelectric converters; a light-transmissive portion filling the opening portions; color filters formed on the light-transmissive portion; and microlenses formed on the color filters. The microlenses may include a plurality of concentric circle patterns and a plurality of arc patterns arranged around the concentric circle patterns. An arc pattern around a specific concentric circle pattern may have a same center as the specific concentric circle pattern. A method of manufacturing the image sensor may include forming the photoelectric converters; forming the interlayer insulating films; removing parts of the interlayer insulating films to form the opening portions; forming the light-transmissive portion to fill the opening portions; forming the color filters; and forming the microlenses.
摘要翻译：图像传感器可以包括在半导体衬底上具有单位像素区域的半导体衬底; 形成在单位像素区域的光电转换器; 层间绝缘膜覆盖光电转换器，并具有形成在光电转换器上方的开口部分; 填充所述开口部的透光部; 形成在透光部分上的滤色器; 和在滤色器上形成的微透镜。微透镜可以包括多个同心圆形图案和围绕同心圆图案布置的多个弧形图案。围绕特定同心圆图案的弧形图案可以具有与特定同心圆图案相同的中心。图像传感器的制造方法可以包括形成光电转换器; 形成层间绝缘膜; 去除层间绝缘膜的部分以形成开口部分; 形成所述透光部以填充所述开口部; 形成滤色片; 并形成微透镜。

8. 发明授权

US06544873B1 Methods of fabricating integrated circuit field effect transistors including multilayer gate electrodes having narrow and wide conductive layers 有权
标题翻译：制造集成电路场效应晶体管的方法，其包括具有窄且宽的导电层的多层栅电极
公开(公告)号：US06544873B1
公开(公告)日：2003-04-08
申请号：US09539058
申请日：2000-03-30
申请人： Kye-hee Yeom , Duck-hyung Lee
发明人： Kye-hee Yeom , Duck-hyung Lee
IPC分类号： H01L213205
CPC分类号： H01L29/6659 , C12Q1/6886 , C12Q2600/136 , C12Q2600/158 , G01N2800/52 , H01L21/28088 , H01L21/28114 , H01L29/42368 , H01L29/42376 , H01L29/4966 , Y10S257/915
摘要： An integrated circuit field effect transistor includes a multilayer gate electrode having a first conductive layer and a second conductive layer on the first conductive layer, wherein the second conductive layer is wider than the first conductive layer. The first conductive layer may be formed of titanium nitride and the second conductive layer may be formed of tungsten, copper and/or titanium silicide. The first conductive layer may be recessed relative to the second conductive layer by wet etching using a solution of hydrogen peroxide or hydrogen peroxide and sulfuric acid.
摘要翻译：集成电路场效应晶体管包括在第一导电层上具有第一导电层和第二导电层的多层栅电极，其中第二导电层比第一导电层宽。第一导电层可以由氮化钛形成，第二导电层可以由钨，铜和/或硅化钛形成。通过使用过氧化氢或过氧化氢和硫酸的溶液的湿蚀刻，第一导电层可以相对于第二导电层凹陷。

9. 发明授权

US06232155B1 Methods of fabricating semiconductor-on-insulator devices including alternating thin and thick film semiconductor regions on an insulating layer 失效
标题翻译：制造绝缘体上半导体器件的方法，包括在绝缘层上交替的薄膜和厚膜半导体区域
公开(公告)号：US06232155B1
公开(公告)日：2001-05-15
申请号：US09454340
申请日：1999-12-03
申请人： Duck-hyung Lee
发明人： Duck-hyung Lee
IPC分类号： H01L2100
CPC分类号： H01L21/76264 , H01L21/76275 , H01L21/76283 , H01L21/84
摘要： A semiconductor-on-insulator (SOI) device is fabricated by forming spaced apart trenches in a first face of a semiconductor substrate. An insulating layer is formed on the first face of the semiconductor substrate, including on the trenches. A second substrate is bonded to the insulating layer, opposite the semiconductor substrate. The semiconductor substrate is thinned at a second face thereof which is opposite the first face, until a semiconductor film remains on the insulating layer, having alternating thin and thick film semiconductor regions on the insulating layer. Source/drains are formed in the thin film semiconductor regions. Insulated gates are formed on the thick film semiconductor regions, such that a respective insulated gate is located between adjacent source/drains. SOI devices which can suppress floating body effects and yet provide dense integration may thereby be formed.
摘要翻译：通过在半导体衬底的第一面中形成间隔开的沟槽来制造绝缘体上半导体（SOI）器件。绝缘层形成在半导体衬底的包含沟槽的第一面上。第二衬底与半导体衬底相对的绝缘层接合。半导体衬底在与第一面相对的第二面处变薄，直到半导体膜保留在绝缘层上，在绝缘层上具有交替的薄膜和厚膜半导体区域。源极/漏极形成在薄膜半导体区域中。绝缘栅极形成在厚膜半导体区域上，使得相应的绝缘栅极位于相邻的源极/漏极之间。因此可以形成能够抑制浮体效应并且提供致密集成的SOI器件。

10. 发明授权

US07667183B2 Image sensor with high fill factor pixels and method for forming an image sensor 有权
标题翻译：具有高填充因子像素的图像传感器和用于形成图像传感器的方法
公开(公告)号：US07667183B2
公开(公告)日：2010-02-23
申请号：US11593663
申请日：2006-11-07
申请人： Seok-ha Lee , Duck-hyung Lee , Jong-cheol Shin , Kang-bok Lee
发明人： Seok-ha Lee , Duck-hyung Lee , Jong-cheol Shin , Kang-bok Lee
IPC分类号： H01L31/00
CPC分类号： H01L27/14603 , H01L27/14627 , H01L27/14641
摘要： An image sensor comprising an array of photoelectric conversion elements in a substrate, the photoelectric conversion elements being arranged in rows and columns extending in a first direction and a second direction respectively, a plurality of first junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common row, and a plurality of second junction isolation regions in the substrate that each isolate side portions of neighboring photoelectric conversion elements of a common column, and a plurality of dielectric isolation regions in the substrate, that each isolate corner portions of neighboring photoelectric conversion elements. In one embodiment, the photoelectric conversion elements have a first pitch in the first direction and have a second pitch in the second direction and the first pitch is substantially equal for the photoelectric conversion elements of a common row, and the second pitch is substantially equal for the photoelectric conversion elements of a common column.
摘要翻译：一种图像传感器，包括在基板中的光电转换元件的阵列，所述光电转换元件分别以沿第一方向和第二方向延伸的行和列布置，所述基板中的多个第一结隔离区域各自隔离侧部分公共行的相邻光电转换元件和基板中的多个第二结隔离区域，每个隔离区域隔离共用列的相邻光电转换元件的侧部和基板中的多个介电隔离区域，相邻光电转换元件的角部。在一个实施例中，光电转换元件在第一方向上具有第一节距并且在第二方向上具有第二节距，并且第一节距对于公共行的光电转换元件基本相等，并且第二节距基本相等共用列的光电转换元件。

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