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1. 发明授权

US07488681B2 Method for fabricating Al metal line 有权
标题翻译：制造铝金属线的方法
公开(公告)号：US07488681B2
公开(公告)日：2009-02-10
申请号：US11504827
申请日：2006-08-14
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L21/4763
CPC分类号： H01L21/76856 , H01L21/32051
摘要： Disclosed is a method for fabricating an Al metal line. The method includes forming an insulating layer on a semiconductor substrate; forming a Ti layer, a bottom TiN layer, an Al layer and a top TiN layer in successive order on the insulating layer; plasma-treating the top TiN layer; forming a photoresist pattern on the plasma-treated top TiN layer; and etching the plasma-treated top TiN layer, the Al layer, the bottom TiN layer, and the Ti layer using the photoresist pattern as an etching mask, thereby forming the Al metal line.
摘要翻译：公开了一种制造铝金属线的方法。该方法包括在半导体衬底上形成绝缘层; 在绝缘层上依次形成Ti层，TiN层，Al层和TiN层，等离子体处理顶部TiN层; 在等离子体处理的顶部TiN层上形成光致抗蚀剂图案; 并使用光致抗蚀剂图案作为蚀刻掩模蚀刻等离子体处理的顶部TiN层，Al层，底部TiN层和Ti层，从而形成Al金属线。

2. 发明申请

US20080054480A1 Semiconductor device and fabricating method thereof 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080054480A1
公开(公告)日：2008-03-06
申请号：US11895338
申请日：2007-08-24
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L23/48 , H01L21/20
CPC分类号： H01L23/5283 , H01L21/76819 , H01L21/76829 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a lower layer having an uneven region on a top surface, a dielectric barrier layer disposed on the lower layer and having an even top surface, and an interlayer dielectric layer disposed on the dielectric barrier layer and having an even top surface.
摘要翻译：半导体器件包括在顶表面上具有不平坦区域的下层，设置在下层上并具有均匀顶面的电介质阻挡层和设置在电介质阻挡层上并具有均匀顶面的层间介电层。

3. 发明授权

US07883928B2 Image sensor and fabricating method thereof 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07883928B2
公开(公告)日：2011-02-08
申请号：US11858306
申请日：2007-09-20
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L21/00
CPC分类号： H01L27/14685 , H01L27/14627
摘要： An image sensor and fabricating method thereof are provided. The image sensor can include a color filter on a semiconductor substrate, a microlens on the color filter layer, and a carbon-doped low temperature oxide layer on the microlens.
摘要翻译：提供了一种图像传感器及其制造方法。图像传感器可以包括半导体衬底上的滤色器，滤色器层上的微透镜，以及微透镜上的碳掺杂低温氧化物层。

4. 发明授权

US07858488B2 Method of forming a device isolation film of a semiconductor device 有权
标题翻译：形成半导体器件的器件隔离膜的方法
公开(公告)号：US07858488B2
公开(公告)日：2010-12-28
申请号：US11872178
申请日：2007-10-15
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A method of forming a device isolation film for a semiconductor device comprising forming a trench on a silicon semiconductor substrate, rounding an upper corner of the trench using an in-situ plasma method, filling the trench by forming an insulating layer over the silicon semiconductor substrate, and forming a shallow trench isolation area by performing a planarization process on the insulating layer so as to expose the silicon semiconductor substrate.
摘要翻译：一种形成用于半导体器件的器件隔离膜的方法，包括在硅半导体衬底上形成沟槽，使用原位等离子体方法对沟槽的上角进行四舍五入，通过在硅半导体衬底上形成绝缘层来填充沟槽并且通过对绝缘层进行平坦化处理来形成浅沟槽隔离区域，以暴露硅半导体衬底。

5. 发明申请

US20080157377A1 SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF 审中-公开
标题翻译：半导体器件及其制造方法
公开(公告)号：US20080157377A1
公开(公告)日：2008-07-03
申请号：US11932354
申请日：2007-10-31
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L23/52 , H01L21/4763
CPC分类号： H01L21/76838 , H01L21/3105 , H01L21/76834
摘要： The present invention relates to a semiconductor device comprising a first wafer comprising an isolating layer formed on a silicon substrate, a barrier metal layer formed on the isolating layer, a first seed layer formed on the barrier metal layer, a first metal layer formed on the first seed layer, a surface of which is cleaned with NE14 or DHF, a barrier dielectric layer formed of SiCN on the first metal layer, a second seed layer formed on the barrier dielectric layer and a second metal layer formed on the second seed layer.
摘要翻译：本发明涉及一种半导体器件，包括：第一晶片，其包括形成在硅衬底上的隔离层，形成在隔离层上的阻挡金属层，形成在阻挡金属层上的第一种子层，形成在第一金属层上的第一金属层第一种子层，其表面用NE14或DHF清洁，在第一金属层上由SiCN形成的势垒介电层，形成在阻挡介电层上的第二籽晶层和形成在第二籽晶层上的第二金属层。

6. 发明申请

US20100163951A1 FLASH MEMORY DEVICE AND MANUFACTURING METHOD OF THE SAME 审中-公开
标题翻译：闪存存储器件及其制造方法
公开(公告)号：US20100163951A1
公开(公告)日：2010-07-01
申请号：US12616532
申请日：2009-11-11
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L29/78 , H01L21/76 , H01L21/336
CPC分类号： H01L27/11521
摘要： A flash memory device is disclosed including: a device isolation layer and an active area formed on a semiconductor substrate in which a source plate and a bit line area are defined; a memory gate formed over the active area of the bit line area; a control gate formed on the semiconductor substrate including the memory gate; a common source area and a drain area disposed on both sides of the control gate; and a common source line contact formed over the common source area of the semiconductor substrate at the active area of the source plate, wherein the active area of the source plate is formed having the same interval with the active area of the bit line area, and the control gate is formed to cross the source plate and the bit line area disposed at both sides of the source plate.
摘要翻译：公开了一种闪存器件，包括：器件隔离层和形成在半导体衬底上的有源区，其中限定了源极板和位线区域; 存储器栅极，形成在位线区域的有效区域上; 形成在包括存储器栅极的半导体衬底上的控制栅极; 设置在控制栅极两侧的公共源极区域和漏极区域; 以及在源极板的有源区域上形成在半导体衬底的公共源极区域上的公共源极线接触，其中源极板的有源区域形成为与位线区域的有效面积具有相同的间隔，以及控制栅极形成为跨越源极板和位于源极板两侧的位线区域。

7. 发明申请

US20080160717A1 Method of Forming Trench in Semiconductor Device 审中-公开
标题翻译：在半导体器件中形成沟槽的方法
公开(公告)号：US20080160717A1
公开(公告)日：2008-07-03
申请号：US11929966
申请日：2007-10-30
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L21/762
CPC分类号： H01L21/76232 , H01L21/31111
摘要： Provided is a method of forming a trench in a semiconductor device capable of improving gap-fill performance. In one method of forming a trench in a semiconductor device, an oxide layer and a mask layer are sequentially formed on a substrate. The mask layer is selectively patterned to form a mask layer pattern. The oxide layer and the substrate are patterned using the mask layer pattern as a mask to form an oxide layer pattern and a trench having a predetermined depth from a surface of the substrate. A liner oxide layer is formed in the trench. A wet etching process is performed on the substrate to remove the liner oxide layer from the trench. A device isolation layer is formed in the trench from which the liner oxide layer has been removed. Then, the mask layer pattern and the oxide layer pattern are removed from the substrate.
摘要翻译：提供一种在能够提高间隙填充性能的半导体器件中形成沟槽的方法。在半导体器件中形成沟槽的一种方法中，在衬底上依次形成氧化物层和掩模层。掩模层被选择性地图案化以形成掩模层图案。使用掩模层图案作为掩模来对氧化物层和衬底进行图案化以形成氧化物层图案和从衬底的表面具有预定深度的沟槽。在沟槽中形成衬里氧化物层。在衬底上进行湿蚀刻工艺以从沟槽去除衬里氧化物层。在去除衬垫氧化物层的沟槽中形成器件隔离层。然后，从衬底去除掩模层图案和氧化物层图案。

8. 发明申请

US20080160715A1 METHOD OF FORMING A DEVICE ISOLATION FILM OF A SEMICONDUCTOR DEVICE 有权
标题翻译：形成半导体器件的器件隔离膜的方法
公开(公告)号：US20080160715A1
公开(公告)日：2008-07-03
申请号：US11872178
申请日：2007-10-15
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L21/76
CPC分类号： H01L21/76224
摘要： A method of forming a device isolation film for a semiconductor device comprising forming a trench on a silicon semiconductor substrate, rounding an upper corner of the trench using an in-situ plasma method, filling the trench by forming an insulating layer over the silicon semiconductor substrate, and forming a shallow trench isolation area by performing a planarization process on the insulating layer so as to expose the silicon semiconductor substrate.
摘要翻译：一种形成用于半导体器件的器件隔离膜的方法，包括在硅半导体衬底上形成沟槽，使用原位等离子体方法对沟槽的上角进行四舍五入，通过在硅半导体衬底上形成绝缘层来填充沟槽并且通过对绝缘层进行平坦化处理来形成浅沟槽隔离区域，以暴露硅半导体衬底。

9. 发明授权

US07732805B2 Image sensor and method for manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07732805B2
公开(公告)日：2010-06-08
申请号：US12119838
申请日：2008-05-13
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L29/06
CPC分类号： H01L51/424 , B82Y10/00 , H01L27/14609 , H01L27/307 , H01L51/0048 , H01L51/444 , Y02E10/549 , Y02P70/521
摘要： An image sensor and a method for manufacturing the same are provided. The image sensor can include transistor circuitry on a substrate, and a photodiode arranged above the transistor circuitry. The photodiode can include carbon nanotubes and a conductive polymer layer on the carbon nanotubes. A transparent conducting electrode can be provided on the carbon nanotubes.
摘要翻译：提供了图像传感器及其制造方法。图像传感器可以包括衬底上的晶体管电路和布置在晶体管电路上方的光电二极管。光电二极管可以包括碳纳米管和碳纳米管上的导电聚合物层。可以在碳纳米管上设置透明导电电极。

10. 发明授权

US07728351B2 Image sensor and method for manufacturing the same 失效
标题翻译：图像传感器及其制造方法
公开(公告)号：US07728351B2
公开(公告)日：2010-06-01
申请号：US11967391
申请日：2007-12-31
申请人： Cheon Man Shim
发明人： Cheon Man Shim
IPC分类号： H01L31/072 , H01L31/109 , H01L31/0328 , H01L31/0336
CPC分类号： H01L27/14609 , H01L27/14603 , H01L27/14692
摘要： An image sensor provides enhanced integration of transistor circuitry and photo diodes. The image sensor simultaneously improves resolution and sensitivity. An image sensor an a method for manufacturing prevents defects in a photo diode by adopting a vertical photo diode structure. An image sensor includes a substrate which may include at least one circuit element. A bottom electrode and a first conductive layer may be sequentially formed over the substrate. A strained intrinsic layer may be formed over the first conductive layer. A second conductive layer may be formed over the strained intrinsic layer. An upper electrode may be formed over the second conductive layer.
摘要翻译：图像传感器提供了晶体管电路和光电二极管的增强集成。图像传感器同时提高分辨率和灵敏度。图像传感器和制造方法通过采用垂直光电二极管结构来防止光电二极管的缺陷。图像传感器包括可以包括至少一个电路元件的基板。可以在衬底上顺序地形成底部电极和第一导电层。可以在第一导电层上形成应变本征层。可以在应变本征层上形成第二导电层。上电极可以形成在第二导电层上。

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