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1. 发明授权

US5816891A Performing chemical mechanical polishing of oxides and metals using sequential removal on multiple polish platens to increase equipment throughput 失效
标题翻译：通过在多个抛光压板上顺序移除来执行氧化物和金属的化学机械抛光，以提高设备产量
公开(公告)号：US5816891A
公开(公告)日：1998-10-06
申请号：US789978
申请日：1997-01-28
申请人： Christy M.-C. Woo
发明人： Christy M.-C. Woo
IPC分类号： B24B37/04 , B24B49/03 , B24B49/12 , B24B1/00
CPC分类号： B24B37/04 , B24B49/03 , B24B49/12
摘要： A chemical mechanical polisher is provided comprising multiple polish platens to sequentially remove any fixed amount of oxide or metal on a semiconductor wafer. Each polish platen polishes a fraction of the total oxide removed. Total oxide removal is achieved after completing polishing on all available polish platens assigned for polishing. Reduced oxide removed enables a high oxide removal rate on each polish platen, thus reducing polish time. Sequential polishing on multiple polish platens reduces polish time especially for high oxide removal in the range greater than 0.5 micrometer to greater than 1 micrometer. A higher polish rate and shorter polish time results in shorter polish pad conditioning time. Multiple polish platens coupled with more than one consecutive wafer-carrier head, each following the previous wafer-carrier head in completing sequential polishing, improves machine throughput by eliminating machine idle time caused by events other than actual oxide or metal polishing. The throughput can be further increased by polishing more than one wafer simultaneously at the same polish platen by: (1) employing wafer-carrier heads that hold a set of wafers, (2) providing sets of wafer-carrier heads which follow the same path simultaneously and polish simultaneously at the same polish platen or (3) employing a combination of both methods. The polishing of metals enables use of different polish pad materials and slurry chemistries for each polish platen.
摘要翻译：提供了一种化学机械抛光机，其包括多个抛光压板，以顺序地去除半导体晶片上的任何固定量的氧化物或金属。每个抛光平台抛光除去的总氧化物的一部分。完成抛光后，在抛光所有可用抛光平板上完成氧化物去除。减少氧化物去除能够在每个抛光台板上实现高氧化物去除率，从而减少抛光时间。在多个抛光平台上进行连续抛光可以减少抛光时间，特别是在大于0.5微米至大于1微米的范围内进行高氧化物去除。较高的抛光速率和较短的抛光时间导致较短的抛光垫调理时间。多个抛光压板与多个连续的晶片载体头连接，每个跟随先前的晶片载体头完成顺序抛光，通过消除由实际氧化物或金属抛光以外的事件引起的机器空闲时间来提高机器产量。通过以下方式，在同一抛光台上同时抛光多于一个晶片可以进一步提高生产量：（1）采用保持一组晶片的晶片载体头，（2）提供一组遵循相同路径的晶片载体头在同一抛光台上同时抛光，或（3）采用两种方法的组合。金属的抛光可以为每个抛光台板使用不同的抛光垫材料和浆料化学品。

2. 发明授权

US5801095A Production worthy interconnect process for deep sub-half micrometer back-end-of-line technology 失效
标题翻译：深层次半微米后端技术的生产价值互连过程
公开(公告)号：US5801095A
公开(公告)日：1998-09-01
申请号：US710071
申请日：1996-09-10
申请人： Richard J. Huang , Christy M.-C. Woo
发明人： Richard J. Huang , Christy M.-C. Woo
IPC分类号： H01L21/768 , H01L23/485 , H01L23/522 , H01L29/45 , H01L21/28
CPC分类号： H01L21/76843 , H01L21/7684 , H01L21/76841 , H01L21/76895 , H01L23/485 , H01L23/5226 , H01L29/456 , H01L2924/0002 , Y10S257/915
摘要： The present invention is directed to improving the throughput of the process for fabricating multilayer interconnects. Tungsten plugs, formed in contact/via openings etched in an interlayer dielectric, have been widely used in industry to form interconnection between different metal layers. An adhesion layer comprising a Ti/TiN stack is typically employed to support the adhesion of the tungsten plug in the contact/via openings. The present invention is directed to a process involving the formation of a Ti/TiN landing pad at the base of contact/via openings prior to the deposition of the interlayer dielectric. The process of the present invention enables the removal of the Ti under-layer and the reduction of the TiN thickness in the Ti/TiN stack. The throughput of the process for fabricating multilayer interconnects is thus greatly improved while the integrity of the devices are maintained.
摘要翻译：本发明旨在改进用于制造多层互连的工艺的生产量。形成在层间电介质中蚀刻的接触/通孔开口的钨塞已被广泛用于工业中以形成不同金属层之间的互连。通常使用包含Ti / TiN叠层的粘合层来支撑钨丝塞在接触/通孔中的粘附。本发明涉及在沉积层间电介质之前在接触/通孔开口的底部形成Ti / TiN着陆焊盘的方法。本发明的方法能够在Ti / TiN叠层中除去Ti底层和TiN厚度的降低。因此，在保持装置的完整性的同时，大大提高了用于制造多层互连的工艺的生产量。

3. 发明授权

US5686761A Production worthy interconnect process for deep sub-half micrometer back-end-of-line technology 失效
标题翻译：深层次半微米后端技术的生产价值互连过程
公开(公告)号：US5686761A
公开(公告)日：1997-11-11
申请号：US608913
申请日：1996-02-29
申请人： Richard J. Huang , Christy M.-C. Woo
发明人： Richard J. Huang , Christy M.-C. Woo
IPC分类号： H01L21/768 , H01L23/485 , H01L23/522 , H01L29/45 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01L21/76843 , H01L21/7684 , H01L21/76841 , H01L21/76895 , H01L23/485 , H01L23/5226 , H01L29/456 , H01L2924/0002 , Y10S257/915
摘要： The present invention is directed to improving the throughput of the process for fabricating multilayer interconnects. Tungsten plugs, formed in contact/via openings etched in an interlayer dielectric, have been widely used in industry to form interconnection between different metal layers. An adhesion layer comprising a Ti/TiN stack is typically employed to support the adhesion of the tungsten plug in the contact/via openings. The present invention is directed to a process involving the formation of a Ti/TiN landing pad at the base of contact/via openings prior to the deposition of the interlayer dielectric. The process of the present invention enables the removal of the Ti under-layer and the reduction of the TiN thickness in the Ti/TiN stack. The throughput of the process for fabricating multilayer interconnects is thus greatly improved while the integrity of the devices are maintained.
摘要翻译：本发明旨在改进用于制造多层互连的工艺的生产量。形成在层间电介质中蚀刻的接触/通孔开口的钨塞已被广泛用于工业中以形成不同金属层之间的互连。通常使用包含Ti / TiN叠层的粘合层来支撑钨丝塞在接触/通孔中的粘附。本发明涉及在沉积层间电介质之前在接触/通孔开口的底部形成Ti / TiN着陆焊盘的方法。本发明的方法能够在Ti / TiN叠层中除去Ti底层和TiN厚度的降低。因此，在保持装置的完整性的同时，大大提高了用于制造多层互连的工艺的生产量。

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