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1. 发明申请

US20210258004A1 GATE DRIVE APPARATUS 有权
公开(公告)号：US20210258004A1
公开(公告)日：2021-08-19
申请号：US17224749
申请日：2021-04-07
申请人： DENSO CORPORATION
发明人： Hironori AKIYAMA , Akimasa NIWA , Masahiro YAMAMOTO
IPC分类号： H03K17/082 , H02M1/08
摘要： A gate drive apparatus includes a driver, a peak voltage detector and a drive capability controller. The driver drives a gate of a first switching element as one of two switching elements respectively in an upper arm and a lower arm of a half-bridge circuit. The peak voltage detector detects a peak voltage at a second switching element in a situation where the first switching element is turned on. The drive capability controller calculates a value of drive capability when the driver turns on the first switching element, in a condition that the peak voltage at the second switching element does not exceed a tolerance value of a voltage at the second switching element according to a specification of the second switching element, and modifies the drive capability when the driver turns on the first switching element, based on a calculated result of the value of the drive capability.

2. 发明申请

US20190199195A1 SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20190199195A1
公开(公告)日：2019-06-27
申请号：US16293834
申请日：2019-03-06
申请人： DENSO CORPORATION
发明人： Hironori AKIYAMA
IPC分类号： H02M1/08 , H01L23/34 , H01L25/07 , H02M7/5387 , H03K17/567
CPC分类号： H02M1/08 , H01L23/34 , H01L23/58 , H01L25/07 , H01L25/072 , H01L25/18 , H02M1/00 , H02M7/48 , H02M7/5387 , H02P27/06 , H03K17/12 , H03K17/567
摘要： A semiconductor device includes a plurality of switching elements electrically connected in parallel with each other, a control unit that outputs a control signal for controlling a current supplied to each of the switching elements, and a temperature estimation unit that estimates a temperature difference between the switching elements. When an estimated temperature difference becomes equal to or higher than a predetermined threshold temperature, the control unit shifts an operation mode to a stop mode for stopping driving of a switching element having a temperature higher than the other.

3. 发明申请

US20220416782A1 GATE DRIVE DEVICE 有权
公开(公告)号：US20220416782A1
公开(公告)日：2022-12-29
申请号：US17898578
申请日：2022-08-30
申请人： DENSO CORPORATION
发明人： Hironori AKIYAMA , Tetsuya DEWA
IPC分类号： H03K17/687 , H02M1/08 , H03K17/16 , H03K17/284 , H02M1/00
摘要： A gate drive device drives a gate of each of two semiconductor switching elements constituting upper and lower arms of a half bridge circuit. The gate drive device detects a peak value of an element voltage that is a voltage of a main terminal of one of the two semiconductor switching elements, as one semiconductor switching element, or a change rate of the element voltage during a change period in which the element voltage changes. The gate drive device determines whether an energization to the one semiconductor switching element during the change period is a forward energization in which a current flows in a forward direction or a reverse energization in which the current flows in a reverse direction.

4. 发明申请

US20140253182A1 DRIVE CONTROL APPARATUS 有权
标题翻译：驱动控制装置
公开(公告)号：US20140253182A1
公开(公告)日：2014-09-11
申请号：US14182744
申请日：2014-02-18
申请人： DENSO CORPORATION
发明人： Hironori AKIYAMA , Noriyuki FUKUI
IPC分类号： H03K5/153
CPC分类号： H03K5/153
摘要： A drive control apparatus for a semiconductor device having a diode and a transistor includes: a current detection device of a current flowing through the diode; and a control device, which applies a gate drive voltage to the semiconductor device when an on-instruction signal is input. The control device compares the current detection signal with a current threshold value during a first period, in which the on-instruction signal is input, after a second period has elapsed from gate drive voltage application time, or gate drive voltage shut-off time. A transient variation is generated on the current detection signal in the second period. The control device shuts off the gate drive voltage when the current detection signal is equal to or larger than the current threshold value. The control device applies the gate drive voltage when the current detection signal is smaller than the current threshold value.
摘要翻译：一种用于具有二极管和晶体管的半导体器件的驱动控制装置，包括：流过二极管的电流的电流检测装置; 以及控制装置，当输入指令信号时，向半导体装置施加栅极驱动电压。控制装置在从栅极驱动电压施加时间经过了第二周期之后或在栅极驱动电压关断时间期间，在输入了指令信号的第一周期期间，将电流检测信号与电流阈值进行比较。在第二周期中，对电流检测信号产生瞬态变化。当电流检测信号等于或大于当前阈值时，控制装置关闭栅极驱动电压。当电流检测信号小于当前阈值时，控制装置施加栅极驱动电压。

5. 发明申请

US20230021657A1 GATE DRIVE DEVICE 有权
公开(公告)号：US20230021657A1
公开(公告)日：2023-01-26
申请号：US17860636
申请日：2022-07-08
申请人： DENSO CORPORATION , TOYOTA JIDOSHA KABUSHIKI KAISHA , MIRISE Technologies Corporation
发明人： Hironori AKIYAMA
IPC分类号： H03K17/041 , H03K17/28 , H03K17/06 , H03K17/14
摘要： A change rate control circuit computes a first drive speed, which is a gate drive speed of a gate of a drive-subject element, for controlling a change rate of an element voltage of the drive-subject element at a target change rate during a change period. A timing generating circuit acquires, in advance, a delay time caused when the gate is driven and determines a switching timing, at which the element voltage reaches a switching threshold voltage which is lower than a desired switching voltage by a predetermined value, during turn-off of the drive-subject element and generates a timing signal representing the switching timing. A speed change circuit changes the gate drive speed from the first drive speed to a second drive speed at the switching timing during turn-off of the drive-subject element.

6. 发明申请

US20220407511A1 GATE DRIVE DEVICE 有权
公开(公告)号：US20220407511A1
公开(公告)日：2022-12-22
申请号：US17898557
申请日：2022-08-30
申请人： DENSO CORPORATION
发明人： Hironori AKIYAMA , Tetsuya DEWA
IPC分类号： H03K17/687 , H02M1/08 , H03K17/16 , H03K17/284
摘要： A gate drive device drives a gate of a semiconductor switching element constituting an upper or lower arm of a half bridge circuit which supplies an output current, which is alternating current, to a load. The gate drive device detects a peak value of an element voltage which is a voltage of a main terminal of the semiconductor switching element or a change rate of the element voltage when the semiconductor switching element is switching. The gate drive device acquires a maximum value among a plurality of peak values or a plurality of change rates during a predetermined detection period including a period in which the semiconductor switching element performs switching multiple number of times.

7. 发明申请

US20170026034A1 SEMICONDUCTOR DEVICE 有权
标题翻译：半导体器件
公开(公告)号：US20170026034A1
公开(公告)日：2017-01-26
申请号：US15163778
申请日：2016-05-25
申请人： DENSO CORPORATION
发明人： Hironori AKIYAMA
IPC分类号： H03K17/04 , H03K17/28
CPC分类号： H03K17/0406 , H03K17/0412 , H03K17/28 , H03K17/567 , H03K2017/6878
摘要： A semiconductor device has a drive unit outputting a first drive signal to a first electrode and a second drive signal to a second electrode, an instruction signal generation unit generating an instruction signal as a basis of the drive signals and a control unit outputting a first control signal as a basis of the first drive signal and a second control signal as a basis of the second drive signal, based on the instruction signal to control the drive unit. The control unit synchronizes the first control signal with the instruction signal, delays a turning-on timing of the second control signal by a predetermined time relative to the instruction signal and determines a turning-off timing of the second control signal based on a previous pulse width of the instruction signal.
摘要翻译：半导体器件具有将第一驱动信号输出到第一电极的驱动单元，向第二电极输出第二驱动信号的指令信号生成单元，生成作为驱动信号的基础的指示信号;以及控制单元，输出第一控制基于用于控制驱动单元的指示信号，作为第一驱动信号的基础信号和作为第二驱动信号的基础的第二控制信号。控制单元使第一控制信号与指令信号同步，相对于指令信号将第二控制信号的接通定时延迟预定时间，并基于先前的脉冲确定第二控制信号的截止定时指令信号的宽度。

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