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1. 发明授权

US11233505B2 Drive circuit for switch 有权
公开(公告)号：US11233505B2
公开(公告)日：2022-01-25
申请号：US17181339
申请日：2021-02-22
申请人： DENSO CORPORATION
发明人： Yohei Kondo
IPC分类号： H03B1/00 , H03K3/00 , H03K17/16 , H02M1/08 , H02M7/5387 , H02P27/06
摘要： A switch drive circuit is provided with a surge detecting unit that detects a surge voltage produced in response to a change in a switching state of the switch; an adjusting unit that adjusts, based on the surge voltage detected by the surge detecting unit, a switching speed of the switch when changing the switching state of the switch; and a mask processing unit that prevents a voltage, detected by the surge voltage detecting unit in a period other than a period where the surge voltage is assumed to be produced in response to a change in the switching state of the switch, from being used by the adjusting unit for adjusting the switching speed.

2. 发明授权

US10540234B2 Drive apparatus for switch 有权
公开(公告)号：US10540234B2
公开(公告)日：2020-01-21
申请号：US16267662
申请日：2019-02-05
申请人： DENSO CORPORATION
发明人： Tetsuya Dewa , Yosuke Asako , Tomotaka Suzuki , Kazunori Watanabe , Yohei Kondo , Junji Miyachi
IPC分类号： H03K3/00 , G06F11/14 , H03K3/017 , H03K7/08 , H03K17/94
摘要： In a drive apparatus, a transmission unit mounted to a first region stops transmission of a pulse signal from a physical-quantity transmission terminal. The transmission unit transmits, from the failure information transmission terminal, a first signal indicative of an occurrence of the failure associated with the target switch when it is determined that the failure associated with the target switch has occurred, and transmits, from the physical-quantity transmission terminal, a second signal indicative of a content of the failure associated with the target switch. A controller mounted to a second region electrically isolated from the first region detects, based on the pulse signal from the physical-quantity transmission terminal, the physical quantity upon no input of the first signal to the controller. The controller identifies, based on the second signal transmitted from the physical-quantity transmission terminal, the content of the failure upon the first signal being input to the controller.

3. 发明授权

US10447259B2 Electronic circuit provided with plurality of switching elements connected to bus bar 有权
公开(公告)号：US10447259B2
公开(公告)日：2019-10-15
申请号：US15496291
申请日：2017-04-25
申请人： DENSO CORPORATION
发明人： Akira Kamiya , Yohei Kondo , Yosuke Asako
IPC分类号： F16P3/20 , H03K17/12 , H02M7/537 , H02P27/06 , H02M7/5387 , H03K17/0814 , H03K17/16 , H02M1/00
摘要： An electronic circuit includes: a bus bar connected to a power source having a positive terminal and a negative terminal; and a plurality of object switching elements as driving objects connected to the bus bar, the object switching elements forming a parallel connected circuit. The object switching elements include minimum on-resistance elements having minimum on-resistance compared to other object switching elements in a corresponding current region among mutually different current regions; and connection points between the minimum on-resistance elements and the bus bar are located at different locations to have mutually different inductance of respective conduction paths between the power source to the connection points located at the different locations.

4. 发明授权

US11133795B2 Overcurrent determining apparatus and drive unit using the same 有权
公开(公告)号：US11133795B2
公开(公告)日：2021-09-28
申请号：US16180164
申请日：2018-11-05
申请人： DENSO CORPORATION
发明人： Tomoyuki Muraho , Yohei Kondo
IPC分类号： H03K17/0812 , G01R19/165 , H03K17/06 , H02H3/087 , H02M1/08 , H02M1/32 , H02H3/08 , H03K17/14 , H02M7/5387 , H03K17/082
摘要： In an overcurrent determining apparatus, a temperature obtainer obtains a temperature parameter indicative of a temperature of a switching element as a temperature measurement value. A determination voltage has a first voltage value when the temperature measurement value is a first temperature. A setter sets the determination voltage to a second voltage value upon determining that the temperature measurement value is a second temperature higher than the first temperature. The second voltage value is lower than the first voltage value and higher than a value of a Miller voltage of the switching element at the second temperature.

5. 发明授权

US10547245B2 Power converter 有权
公开(公告)号：US10547245B2
公开(公告)日：2020-01-28
申请号：US15991098
申请日：2018-05-29
申请人： DENSO CORPORATION
发明人： Yohei Kondo
IPC分类号： H02M7/00 , H02M7/46 , H05K7/14 , H05K7/02 , H02M1/088
摘要： In a power converter including a plurality of switches, a plurality of freewheeling diodes each electrically connected in anti-parallel with a respective one of the switches, a freewheeling current input electrically connected to an output terminal of each of the switches, and a freewheeling current output electrically connected to an input terminal of each of the switches, a plurality of freewheeling current paths are defined, each of which is an electrical path passing through a respective one of the freewheeling diodes from the freewheeling current input to the freewheeling current output. At least one of the freewheeling current paths is a maximum path having a maximum impedance among the freewheeling current paths. A voltage drop across the freewheeling diode included in the maximum path is less than a voltage drop across each of the other freewheeling diodes when a freewheeling current flows through each of the plurality of freewheeling diodes.

6. 发明授权

US10291149B2 Power converter for reducing a difference between reference potentials of semiconductor devices that are simultaneously turned on and off 有权
公开(公告)号：US10291149B2
公开(公告)日：2019-05-14
申请号：US16065876
申请日：2016-11-04
申请人： DENSO CORPORATION
发明人： Kengo Mochiki , Yuu Yamahira , Tomohisa Sano , Yohei Kondo
IPC分类号： H02M7/5387 , H01L23/367 , H02P27/06 , H02M7/00
摘要： A power converter is provided with semiconductor devices, a capacitor, a positive bus bar, and a negative bus bar. The negative bus bar includes a negative side body and a plurality of negative side branches. The negative side branches include an interposed negative side branch interposed between two positive side branches connected to the upper arm semiconductor devices that belong to the same semiconductor device group as the lower arm semiconductor devices connected to the negative side branches, and include an end negative side branch that is not interposed between two positive side branches. The self-inductance of the end negative side branch is smaller than the self-inductance of the interposed negative side branch.

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