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1. 发明授权

US11489299B2 Processing apparatus 有权
公开(公告)号：US11489299B2
公开(公告)日：2022-11-01
申请号：US17201571
申请日：2021-03-15
申请人： DISCO CORPORATION
发明人： Masaru Nakamura
IPC分类号： H01R13/74
摘要： A processing apparatus includes a chuck table that holds a workpiece, a processing unit that processes the workpiece held by the chuck table, and a panel that surrounds components including the chuck table and the processing unit. Power source sockets are disposed on the panel, and electric apparatuses including an inspection device, a personal computer, a fan, and a cleaner are connected to the power source sockets and are used.

2. 发明授权

US11285565B2 Laser processing method 有权
公开(公告)号：US11285565B2
公开(公告)日：2022-03-29
申请号：US15961347
申请日：2018-04-24
申请人： DISCO CORPORATION
发明人： Masaru Nakamura
IPC分类号： B23K26/38 , B23K37/04 , H01L21/268 , H01L21/78 , H01L21/67 , B23K26/03 , B23K26/00 , B23K26/06 , B23K26/53 , B23K26/08 , B23K26/046 , B23K101/40 , B23K103/00
摘要： A wafer held on a chuck table is processed by applying a laser beam to the wafer. The laser processing method includes positioning a height detecting unit in a work area of the wafer where the laser beam is to be applied, relatively moving the chuck table and the height detecting unit along a forward path in an X direction, detecting the height of the upper surface of the wafer along the forward path by using the height detecting unit, and storing height information at plural X coordinates on the forward path into a memory; and relatively moving the chuck table and the height detecting unit along a backward path in the X direction, detecting the height of the upper surface of the wafer along the backward path by using the height detecting unit, and storing height information at plural X coordinates on the backward path into the memory.

3. 发明授权

US11069543B2 Laminate processing method 有权
公开(公告)号：US11069543B2
公开(公告)日：2021-07-20
申请号：US16680591
申请日：2019-11-12
申请人： DISCO CORPORATION
发明人： Masaru Nakamura
IPC分类号： H01L21/67 , H01L21/78 , H01L21/683
摘要： A laminate processing method includes a modified layer removing step of positioning a cutting blade to the region of the wafer corresponding to each of the division lines and cutting while supplying cutting water into which a water-soluble resin is mixed from the wafer side of the laminate, thereby removing the modified layer formed inside the wafer, a dividing step of, after the modified layer removing step is carried out, expanding the expandable tape, and dividing the laminate into individual image sensor chips, and a cleaning step of supplying cleaning water from the back surface of the wafer with a state in which the expandable tape is expanded being maintained, thereby cleaning the laminate.

4. 发明授权

US11031276B2 Wafer expanding method and wafer expanding apparatus 有权
公开(公告)号：US11031276B2
公开(公告)日：2021-06-08
申请号：US16667164
申请日：2019-10-29
申请人： DISCO CORPORATION
发明人： Yoshihiro Kawaguchi , Masaru Nakamura
IPC分类号： H01L21/683 , H01L21/78
摘要： A wafer expanding method for expanding a wafer having a plurality of rectangular devices respectively formed in a plurality of separate regions defined by a plurality of division lines, thereby increasing spacing between any adjacent ones of the devices, each rectangular device having a pair of shorter sides and a pair of longer sides. The wafer expanding method includes a jig preparing step of preparing an annular jig having an elliptical opening, the elliptical opening having a shorter portion for restricting a width of the annular exposed portion in a first direction where the shorter sides of the devices extend to a first width and a longer portion for restricting the width of the annular exposed portion in a second direction where the longer sides of the devices extend to a second width larger than the first width.

5. 发明授权

US10438898B2 Wafer processing method 有权
公开(公告)号：US10438898B2
公开(公告)日：2019-10-08
申请号：US15819673
申请日：2017-11-21
申请人： DISCO CORPORATION
发明人： Masaru Nakamura , Masamitsu Agari
IPC分类号： H01L21/26 , H01L23/544 , H01L21/268 , H01L21/304 , H01L21/683 , H01L21/78 , B24B37/04 , H01L21/67
摘要： A wafer processing method for processing a wafer has a front side and a back side, the front side of the wafer being formed with a plurality of crossing streets for defining a plurality of separate regions where a plurality of devices are individually formed. The wafer processing method includes the steps of first attaching a protective tape to the front side of the wafer, next heating the protective tape and the wafer, next applying a laser beam having a transmission wavelength to the wafer to the back side of the wafer along the streets, thereby forming a modified layer inside the wafer along each street, and next grinding the back side of the wafer, thereby reducing a thickness of the wafer to a predetermined thickness and also dividing the wafer into individual chips along each street where the modified layer is formed as a division start point.

6. 发明授权

US09685377B2 Wafer processing method 有权
公开(公告)号：US09685377B2
公开(公告)日：2017-06-20
申请号：US14958268
申请日：2015-12-03
申请人： DISCO CORPORATION
发明人： Masaru Nakamura , Yuya Matsuoka
IPC分类号： H01L21/30 , H01L21/78 , H01L21/304 , H01L21/683
CPC分类号： H01L21/78 , H01L21/304 , H01L21/6836 , H01L2221/68327 , H01L2221/6834 , H01L2221/68386 , H01L2924/0002 , H01L2924/00
摘要： A wafer is divided into individual device chips along a plurality of scheduled division lines. A protective film is formed by coating liquid-state resin, which is hardened by irradiation of ultraviolet rays thereon, on the front face of the wafer. The protective film is hardened by irradiating ultraviolet rays upon the protective film. A protective tape is adhered on a front face of the hardened protective film. A modified layer is formed by irradiating a laser beam of a wavelength having a transparency to the wafer along the scheduled division lines with a focal point thereof positioned in the inside of the wafer. A back face of the wafer is ground while grinding water is supplied to thin the wafer to a given thickness and divide the wafer into the individual device chips along the scheduled division lines using the modified layer as a start point of the break.

7. 发明申请

US20170162521A1 WAFER PROCESSING METHOD 有权
公开(公告)号：US20170162521A1
公开(公告)日：2017-06-08
申请号：US15370638
申请日：2016-12-06
申请人： DISCO CORPORATION
发明人： Masaru Nakamura
IPC分类号： H01L23/00 , H01L23/544 , H01L21/3065 , H01L21/683 , H01L21/268 , H01L21/02 , H01L21/78 , H01L21/304
CPC分类号： H01L23/562 , H01L21/02076 , H01L21/268 , H01L21/304 , H01L21/3065 , H01L21/67051 , H01L21/67092 , H01L21/67132 , H01L21/6715 , H01L21/6836 , H01L21/78 , H01L22/34 , H01L23/544 , H01L2221/68327 , H01L2221/6834 , H01L2221/68386 , H01L2223/5446
摘要： Disclosed herein is a wafer processing method including a stacked member removing step of applying a laser beam having an absorption wavelength to a stacked member through a protective film along each division line formed on the front side of a wafer, thereby performing ablation to remove the stacked member present on each division line, a dividing step of applying an external force to the wafer to divide the wafer into individual device chips along each division line where a modified layer is previously formed, and a plasma etching step of supplying an etching gas in a plasma state to the wafer from the front side thereof after performing the stacked member removing step or after performing the dividing step, thereby removing damage due to the ablation in the stacked member removing step.

8. 发明授权

US09640420B2 Wafer processing method 有权
公开(公告)号：US09640420B2
公开(公告)日：2017-05-02
申请号：US15179063
申请日：2016-06-10
申请人： DISCO CORPORATION
发明人： Masaru Nakamura
IPC分类号： H01L21/00 , H01L21/683 , H01L21/78 , H01L23/544
CPC分类号： H01L21/6836 , H01L21/02076 , H01L21/304 , H01L21/6835 , H01L21/78 , H01L23/544 , H01L2221/68327 , H01L2221/6834 , H01L2221/68381 , H01L2223/5446
摘要： A method of processing a wafer includes coating the front side of the wafer with a water-soluble liquid resin to form a thin film; fixing the wafer to a protective plate for protecting the front side of the wafer, with a bond material interposed between the protective plate and the thin film; holding by a chuck table the protective plate with the wafer fixed thereto and grinding the back side of the wafer to make the wafer have a predetermined thickness; releasing step of releasing the bond material together with the protective plate to which the wafer has been fixed; and supplying water to the bond material remaining on the front side of the wafer to remove the thin film together with the bond material.

9. 发明申请

US20170040201A1 ADHESION DETECTING METHOD 有权
标题翻译：粘合检测方法
公开(公告)号：US20170040201A1
公开(公告)日：2017-02-09
申请号：US15219737
申请日：2016-07-26
申请人： DISCO CORPORATION
发明人： Masaru Nakamura
IPC分类号： H01L21/683 , H01L21/66
CPC分类号： H01L21/6836 , H01L22/12 , H01L2221/6834 , H01L2221/68381
摘要： An adhesion detecting method detects the degree of adhesion of a protective tape having an adhesive layer to a wafer having devices on the front side. A protective tape is attached to the front side of the wafer with the adhesive layer facing the wafer. The protective tape is then peeled from the front side of the wafer. An arbitrary specific region on the front side of the wafer is imaged to detect a first height difference of first unevenness. A corresponding region on the adhesive layer of the peeled protective tape is imaged to detect a second height difference of second unevenness formed on the adhesive layer. The first height difference and the second height difference are compared with each other to determine whether or not the second height difference falls within an allowable range with respect to the first height difference.
摘要翻译：附着检测方法检测具有粘合剂层的保护带与具有正面装置的晶片的粘附程度。保护胶带贴合到晶片的正面，粘合剂层面向晶片。然后将保护带从晶片的前侧剥离。对晶片前侧的任意的特定区域成像，以检测第一不均匀度的第一高度差。被剥离的保护带的粘合剂层上的对应区域被成像以检测形成在粘合剂层上的第二不均匀度的第二高度差。将第一高度差和第二高度差彼此进行比较，以确定第二高度差是否落在相对于第一高度差的容许范围内。

10. 发明申请

US20170011965A1 WAFER PROCESSING METHOD 有权
标题翻译： WAFER加工方法
公开(公告)号：US20170011965A1
公开(公告)日：2017-01-12
申请号：US15202142
申请日：2016-07-05
申请人： DISCO CORPORATION
发明人： Masaru Nakamura
IPC分类号： H01L21/78 , B23K26/53 , B23K26/00
CPC分类号： H01L21/78 , B23K26/0006 , B23K26/53 , B23K2103/56
摘要： There is provided a wafer processing method including a modified layer forming step. In the wafer processing method, the power of a pulse laser beam set in the modified layer forming step is set to power that forms modified layers and cracks in such a manner that a wafer is allowed to be divided into individual device chips before the thickness of the wafer reaches a finished thickness and, after the wafer is divided into the individual device chips, the time until the thickness of the wafer reaches the finished thickness is such a time that damage due to rubbing of the individual device chips against each other is not caused through grinding under a predetermined grinding condition set in a back surface grinding step.
摘要翻译：提供了包括改性层形成步骤的晶片处理方法。在晶片处理方法中，将设置在改性层形成步骤中的脉冲激光束的功率设定为形成改性层和裂纹的功率，使得允许将晶片分割成单个器件芯片，之前的厚度晶片达到最终的厚度，并且在将晶片分成各个器件芯片之后，直到晶片的厚度达到最终厚度的时间是这样的时间，即由于各个器件芯片彼此摩擦而引起的损坏不是在设置在背面研磨工序中的预定的研磨条件下通过研磨引起。

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