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    • 5. 发明授权
    • Projection objective for microlithography with stray light compensation and related methods
    • 具有杂散光补偿和相关方法的微光刻的投影目标
    • US09063439B2
    • 2015-06-23
    • US12624993
    • 2009-11-24
    • Aksel GoehnermeierDaniel KraehmerVladimir KamenovMichael Totzeck
    • Aksel GoehnermeierDaniel KraehmerVladimir KamenovMichael Totzeck
    • G03B27/68G03F7/20
    • G03F7/70958G03F7/70308G03F7/70341G03F7/70591G03F7/70941
    • A projection objective for applications in microlithography, a microlithography projection exposure apparatus with a projection objective, a microlithographic manufacturing method for microstructured components, and a component manufactured using such a manufacturing method are disclosed. The projection objective includes an optical component configured so that, during use of the projection objective, the optical component generates a stray light component in the exposure field of the projection objective which adapts a parameter of the projection objective to a parameter of a second projection objective. The parameter is the stray light component at the exposure field of the projection objective and/or a variation of the stray light component at the exposure field of the projection objective. The parameter of the second projection objective is a stray light component at an exposure field of the second projection objective and/or a variation of the stray light component at the exposure field of the second projection objective. The second projection objective is different from the projection objective.
    • 公开了一种用于微光刻的投影物镜,具有投影物镜的微光刻投影曝光设备,微结构元件的微光刻制造方法以及使用这种制造方法制造的元件。 投影物镜包括一个光学元件,其被构造成使得在投影物镜的使用期间,光学元件在投影物镜的曝光区域中产生杂散光分量,该投射物镜将投射物镜的参数适应于第二投影物镜的参数 。 该参数是在投影物镜的曝光场处的杂散光分量和/或投影物镜的曝光场处的杂散光分量的变化。 第二投影物镜的参数是在第二投影物镜的曝光场处的杂散光分量和/或第二投影物镜的曝光场处的杂散光分量的变化。 第二个投影目标与投影目标不同。