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    • 3. 发明授权
    • Support facility
    • 支持设施
    • US5671567A
    • 1997-09-30
    • US210719
    • 1994-03-18
    • Cyril J. SilbermanDavid E. CarlsonMichael P. CrellyGary M. HassebroekMark A. McCorkellC. Andrew ChengRichard H. Eide
    • Cyril J. SilbermanDavid E. CarlsonMichael P. CrellyGary M. HassebroekMark A. McCorkellC. Andrew ChengRichard H. Eide
    • B64F1/22B66F7/14B66B9/16B66F5/00
    • B66F7/14B64F1/22
    • An improved facility for supporting the main landing gear assembly and the nose wheel assembly of a commercial jetliner is quickly adjustable so as to be able to accommodate different aircraft models. The facility includes a nose wheel lift platform system that includes an elongated pit, a support platform that is supported in the pit and is adapted to support an aircraft's nose wheel assembly, and a number of spacer blocks for covering portions of the elongated pit that are not covered by the support platform. The support platform is mounted on a trolley which is equipped to move the support platform up or down as well as lengthwise along the pit. The spacer blocks are slidable along the upper opening of the pit. By moving the trolley beneath a spacer block and engaging the spacer block with the support platform, an operator can move the spacer blocks with the support platform. Accordingly, an operator wishing to reposition the support platform to accommodate a certain type of aircraft may quickly and conveniently reposition the spacer blocks to expose the intended new location of the support platform, and cover the position that was left exposed, prior to moving the support platform to its new location.
    • 用于支撑商用喷气式客机的主起落架组件和前轮组件的改进设备可以快速调节,以便能够容纳不同的飞机型号。 该设施包括前轮升降平台系统,其包括细长的凹坑,支撑在凹坑中并且适于支撑飞机前轮组件的支撑平台,以及用于覆盖细长凹坑的部分的多个间隔块 不支持平台覆盖。 支撑平台安装在手推车上,该手推车装备有可沿着凹坑向上或向下以及纵向移动支撑平台。 间隔块可沿着坑的上部开口滑动。 通过将手推车移动到间隔块下方并将间隔块与支撑平台接合,操作者可以利用支撑平台移动间隔块。 因此,希望重新定位支撑平台以容纳某种类型的飞行器的操作者可以在移动支撑件之前快速且方便地重新定位间隔块以暴露支撑平台的预期新位置并且覆盖被暴露的位置 平台到其新的位置。
    • 5. 发明授权
    • Schottky barrier semiconductor device and method of making same
    • 肖特基势垒半导体器件及其制造方法
    • US4142195A
    • 1979-02-27
    • US710186
    • 1976-07-30
    • David E. CarlsonChristopher R. WronskiAlfred R. Triano, Jr.
    • David E. CarlsonChristopher R. WronskiAlfred R. Triano, Jr.
    • H01L21/205H01L29/04H01L31/07H01L29/48H01L31/00
    • H01L21/02381H01L21/02532H01L21/02576H01L21/0262H01L29/04H01L31/07Y02E10/50
    • A first layer of semiconductor device is of doped amorphous silicon prepared by a glow discharge in a mixture of silane and a doping gas. The first layer is on a substrate having good electrical properties. On the first layer and spaced from the substrate is a second layer of amorphous silicon prepared by a glow discharge in silane. On the second layer opposite the first layer is a metallic film forming a surface barrier junction therebetween, i.e. a Schottky barrier. The first layer is doped so as to make an ohmic contact with the substrate. Preferably the doping concentration of the first layer is graded so the dopant concentration is maximum at the interface of the first layer and the substrate. In a second embodiment of the Schottky barrier semiconductor device an intermediate layer is between and contiguous to both the first layer and the substrate. The intermediate layer facilitates in making ohmic contact between the amorphous silicon and the substrate. Annealing and heat treating steps are performed in the fabrication of the Schottky barrier device to increase device efficiency.
    • 第一层半导体器件是通过在硅烷和掺杂气体的混合物中的辉光放电制备的掺杂非晶硅。 第一层在具有良好电性能的基板上。 在第一层并且与衬底间隔开的是通过硅烷中的辉光放电制备的第二层非晶硅。 在与第一层相对的第二层上是在其间形成表面阻挡结的金属膜,即肖特基势垒。 第一层被掺杂以与衬底形成欧姆接触。 优选地,第一层的掺杂浓度是渐变的,使得掺杂剂浓度在第一层和衬底的界面处最大。 在肖特基势垒半导体器件的第二实施例中,中间层在第一层和衬底之间并且与其邻接。 中间层有助于在非晶硅和衬底之间形成欧姆接触。 在制造肖特基势垒器件中进行退火和热处理步骤以提高器件效率。
    • 10. 发明申请
    • Solar Cells
    • 太阳能电池
    • US20100084009A1
    • 2010-04-08
    • US12531138
    • 2008-03-14
    • David E. CarlsonMurray S. Bennett
    • David E. CarlsonMurray S. Bennett
    • H01L31/00H01L31/18
    • H01L31/0682H01L31/022441H01L31/062H01L31/0745H01L31/0747Y02E10/547
    • A photovoltaic cell comprising a semiconductor wafer comprising a front, light receiving surface and an opposite back surface, a passivation layer on at least the back surface, a doped layer opposite in conductivity type to the wafer over the passivation layer, an induced inversion layer, a dielectric layer over the doped layer, and one or more localized emitter contacts and one or more localized base contacts on at least the back surface extending at least through the dielectric layer; and a neutral surface photovoltaic cell comprising a semiconductor wafer comprising a front, light receiving surface and an opposite back surface, neutral passivation layer on at least the back surface, a dielectric layer over the passivation layer, and one or more localized emitter contacts and one or more localized base contacts on at least the back surface extending at least through the dielectric layer.
    • 一种包括半导体晶片的光伏电池,包括前面,光接收表面和相对的后表面,在至少背表面上的钝化层,与钝化层上的晶片相反的导电类型的掺杂层,感应反型层, 在所述掺杂层上方的电介质层,以及至少延伸至少通过所述电介质层的至少所述背表面上的一个或多个局部发射极触点和一个或多个局部基极触点; 以及包括半导体晶片的中性表面光伏电池,所述半导体晶片包括前面,光接收表面和相对的后表面,至少在所述背表面上的中性钝化层,所述钝化层上的电介质层,以及一个或多个局部发射体触点和一个 或至少在至少通过介电层延伸的背表面上的局部基底触点。