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    • 1. 发明申请
    • Progressive random access scan circuitry
    • 逐行随机存取扫描电路
    • US20080091995A1
    • 2008-04-17
    • US11526379
    • 2006-09-25
    • Dong Hyun BaikKewal K. Saluja
    • Dong Hyun BaikKewal K. Saluja
    • G01R31/28
    • G01R31/318541G11C11/412G11C11/419G11C29/32G11C2029/3202
    • A scan cell is described for testing an integrated circuit. The scan cell may include circuitry adapted to operate in a non-test mode as a storage element and adapted to operate as a static random access memory (SRAM) cell in a test mode. For example, the circuitry may include one or more pass transistors and a flip flop. The scan cell may be one of a plurality of addressable scan cells in one or more grids for testing the integrated circuit. For example, the scan cells may be arranged in a single grid or may be partitioned into two or more grids. The scan cell may be used for reliability testing or for performance testing. The PRAS cell for performance testing may be staged, with a first pattern applied and then a second pattern applied. For example, one section of the scan cell may operate using a clock cycle of Φ1 and another section of the PRAS cell may operate using a clock cycle of Φ2 which is different from Φ1.
    • 描述了用于测试集成电路的扫描单元。 扫描单元可以包括适于以非测试模式操作为存储元件并适于在测试模式中作为静态随机存取存储器(SRAM)单元操作的电路。 例如,电路可以包括一个或多个传输晶体管和触发器。 扫描单元可以是用于测试集成电路的一个或多个栅格中的多个可寻址扫描单元之一。 例如,扫描单元可以被布置在单个网格中或者可以被划分成两个或更多个网格。 扫描单元可用于可靠性测试或性能测试。 用于性能测试的PRAS单元可以进行分级,应用第一模式,然后应用第二模式。 例如,扫描单元的一个部分可以使用Phi1&lt; 1&gt; 1的时钟周期来操作,并且PRAS单元的另一部分可以使用Phi <2>的时钟周期来操作,该时钟周期是 不同于Phi <1>
    • 2. 发明授权
    • Progressive random access scan circuitry
    • 逐行随机存取扫描电路
    • US07665001B2
    • 2010-02-16
    • US11526379
    • 2006-09-25
    • Dong Hyun BaikKewal K. Saluja
    • Dong Hyun BaikKewal K. Saluja
    • G01R31/28
    • G01R31/318541G11C11/412G11C11/419G11C29/32G11C2029/3202
    • A scan cell is described for testing an integrated circuit. The scan cell may include circuitry adapted to operate in a non-test mode as a storage element and adapted to operate as a static random access memory (SRAM) cell in a test mode. For example, the circuitry may include one or more pass transistors and a flip flop. The scan cell may be one of a plurality of addressable scan cells in one or more grids for testing the integrated circuit. For example, the scan cells may be arranged in a single grid or may be partitioned into two or more grids. The scan cell may be used for reliability testing or for performance testing. The PRAS cell for performance testing may be staged, with a first pattern applied and then a second pattern applied. For example, one section of the scan cell may operate using a clock cycle of Φ1 and another section of the PRAS cell may operate using a clock cycle of Φ2 which is different from Φ1.
    • 描述了用于测试集成电路的扫描单元。 扫描单元可以包括适于以非测试模式操作为存储元件并适于在测试模式中作为静态随机存取存储器(SRAM)单元操作的电路。 例如,电路可以包括一个或多个传输晶体管和触发器。 扫描单元可以是用于测试集成电路的一个或多个栅格中的多个可寻址扫描单元之一。 例如,扫描单元可以被布置在单个网格中或者可以被划分成两个或更多个网格。 扫描单元可用于可靠性测试或性能测试。 用于性能测试的PRAS单元可以进行分级,应用第一模式,然后应用第二模式。 例如,扫描单元的一个部分可以使用Phi1的时钟周期来操作,并且PRAS单元的另一部分可以使用与Phi1不同的Phi2的时钟周期来操作。