专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US6097659A Power-up circuit for semiconductor memory device 有权
标题翻译：半导体存储器件的上电电路
公开(公告)号：US6097659A
公开(公告)日：2000-08-01
申请号：US239858
申请日：1999-01-29
申请人： Dong-Keum Kang
发明人： Dong-Keum Kang
IPC分类号： G11C11/413 , G11C5/14 , G11C7/20 , G11C11/407 , H03K3/00 , G11C7/00
CPC分类号： G11C5/143 , G11C7/20
摘要： A power-up circuit for a semiconductor memory device includes an external supply voltage level detector for detecting an external supply voltage level received from an exterior, and generating an external supply voltage detection signal when a predetermined voltage level is detected, an internal supply voltage level detector for detecting an internal supply voltage level and generating an internal supply voltage detection signal when a predetermined voltage level is detected, and a power-up signal generator for receiving the internal and external supply voltage detection signals and generating a low level power-up signal at a falling edge of the internal supply voltage detection signal. The circuit prevents an access of the external device, thereby preventing the generation of an excessive current such as a latch-up caused by an instability at the internal nodes and the unstable operation of the internal circuit.
摘要翻译：半导体存储器件的上电电路包括外部电源电平检测器，用于检测从外部接收的外部电源电压电平，并且当检测到预定电压电平时产生外部电源电压检测信号，内部电源电压电平检测器，用于在检测到预定电压电平时检测内部电源电压和产生内部电源电压检测信号;以及上电信号发生器，用于接收内部和外部电源电压检测信号并产生低电平上电信号在内部电源电压检测信号的下降沿。电路防止外部设备的接入，从而防止由内部节点的不稳定性和内部电路的不稳定操作引起的诸如闩锁的过大电流的产生。

2. 发明授权

US08324877B2 Voltage down converter 有权
标题翻译：降压转换器
公开(公告)号：US08324877B2
公开(公告)日：2012-12-04
申请号：US13243742
申请日：2011-09-23
申请人： Dong-Keum Kang
发明人： Dong-Keum Kang
IPC分类号： G05F1/40 , G05F3/16
CPC分类号： G05F1/465
摘要： A voltage down converter includes a voltage comparator for comparing a first reference voltage and an internal voltage to provide a first driving signal; a driving signal controller coupled with the voltage comparator, the driving signal controller configured to generate a second driving signal in response to an external voltage and selectively providing any one of the first and second driving signals; and a voltage supply coupled with the driving signal controller, the voltage supply configured to receive the selectively provided first and second driving signals, wherein the voltage supply is activated in accordance with the first or second driving signal, thereby providing the internal voltage.
摘要翻译：降压转换器包括用于比较第一参考电压和内部电压以提供第一驱动信号的电压比较器; 与所述电压比较器耦合的驱动信号控制器，所述驱动信号控制器被配置为响应于外部电压产生第二驱动信号并且选择性地提供所述第一和第二驱动信号中的任何一个; 以及与所述驱动信号控制器耦合的电压源，所述电压源被配置为接收所述选择性地提供的第一和第二驱动信号，其中所述电压源根据所述第一或第二驱动信号被激活，从而提供所述内部电压。

3. 发明申请

US20120013318A1 VOLTAGE DOWN CONVERTER 有权
标题翻译：降压转换器
公开(公告)号：US20120013318A1
公开(公告)日：2012-01-19
申请号：US13243742
申请日：2011-09-23
申请人： Dong-Keum Kang
发明人： Dong-Keum Kang
IPC分类号： G05F1/10
CPC分类号： G05F1/465
摘要： A voltage down converter includes a voltage comparator for comparing a first reference voltage and an internal voltage to provide a first driving signal; a driving signal controller coupled with the voltage comparator, the driving signal controller configured to generate a second driving signal in response to an external voltage and selectively providing any one of the first and second driving signals; and a voltage supply coupled with the driving signal controller, the voltage supply configured to receive the selectively provided first and second driving signals, wherein the voltage supply is activated in accordance with the first or second driving signal, thereby providing the internal voltage.
摘要翻译：降压转换器包括用于比较第一参考电压和内部电压以提供第一驱动信号的电压比较器; 与所述电压比较器耦合的驱动信号控制器，所述驱动信号控制器被配置为响应于外部电压产生第二驱动信号并且选择性地提供所述第一和第二驱动信号中的任何一个; 以及与所述驱动信号控制器耦合的电压源，所述电压源被配置为接收所述选择性地提供的第一和第二驱动信号，其中所述电压源根据所述第一或第二驱动信号被激活，从而提供所述内部电压。

4. 发明授权

US08044647B2 Voltage down converter 有权
标题翻译：降压转换器
公开(公告)号：US08044647B2
公开(公告)日：2011-10-25
申请号：US11962039
申请日：2007-12-20
申请人： Dong-Keum Kang
发明人： Dong-Keum Kang
IPC分类号： G05F1/40 , G05F3/16
CPC分类号： G05F1/465
摘要： A voltage down converter includes a voltage comparator for comparing a first reference voltage and an internal voltage to provide a first driving signal; a driving signal controller coupled with the voltage comparator, the driving signal controller configured to generate a second driving signal in response to an external voltage and selectively providing any one of the first and second driving signals; and a voltage supply coupled with the driving signal controller, the voltage supply configured to receive the selectively provided first and second driving signals, wherein the voltage supply is activated in accordance with the first or second driving signal, thereby providing the internal voltage.
摘要翻译：降压转换器包括用于比较第一参考电压和内部电压以提供第一驱动信号的电压比较器; 与所述电压比较器耦合的驱动信号控制器，所述驱动信号控制器被配置为响应于外部电压产生第二驱动信号并且选择性地提供所述第一和第二驱动信号中的任何一个; 以及与所述驱动信号控制器耦合的电压源，所述电压源被配置为接收所述选择性地提供的第一和第二驱动信号，其中所述电压源根据所述第一或第二驱动信号被激活，从而提供所述内部电压。

5. 发明申请

US20050093581A1 Apparatus for generating internal voltage capable of compensating temperature variation 审中-公开
标题翻译：用于产生能够补偿温度变化的内部电压的装置
公开(公告)号：US20050093581A1
公开(公告)日：2005-05-05
申请号：US10745861
申请日：2003-12-24
申请人： Dong-Keum Kang
发明人： Dong-Keum Kang
IPC分类号： G11C5/14 , G05F3/24 , H03K5/153
CPC分类号： G05F3/245
摘要： An apparatus for generating an internal voltage includes a comparing unit for comparing voltage levels between a reference voltage and a comparison voltage, a current supplying unit for outputting a current to an output terminal in response to an output signal of the comparing unit, and a voltage dividing unit for outputting the comparison voltage by dividing a voltage of the output terminal in a selected dividing ratio from a plurality of dividing ratios in response to a selection signal.
摘要翻译：用于产生内部电压的装置包括用于比较参考电压和比较电压之间的电压电平的比较单元，用于响应于比较单元的输出信号而将电流输出到输出端的电流供应单元和电压分割单元，用于通过根据选择信号将选择的分频比中的输出端子的电压与多个分频比进行分压来输出比较电压。

6. 发明授权

US08111058B2 Circuit for generating reference voltage of semiconductor memory apparatus 有权
标题翻译：用于产生半导体存储装置的参考电压的电路
公开(公告)号：US08111058B2
公开(公告)日：2012-02-07
申请号：US12169545
申请日：2008-07-08
申请人： Dong-Keum Kang
发明人： Dong-Keum Kang
IPC分类号： G05F3/16
CPC分类号： G11C5/147 , Y10S323/907
摘要： A reference voltage generating circuit in a semiconductor memory apparatus comprises a driving control signal generating unit configured to generate a driving control signal according to a temperature variation, wherein the driving control signal generating unit is enabled in response to a power-up signal, a driving unit configured to control a voltage level, which is applied to a voltage transfer node, in response to the power-up signal and the driving control signal, and a reference voltage generating unit configured to generate a reference voltage when a voltage level on the voltage transfer node is higher than a predetermined voltage level.
摘要翻译：半导体存储装置中的参考电压产生电路包括：驱动控制信号生成单元，被配置为根据温度变化产生驱动控制信号，其中驱动控制信号生成单元响应于上电信号而被使能，驱动单元，被配置为响应于上电信号和驱动控制信号来控制施加到电压传输节点的电压电平;以及参考电压产生单元，被配置为当电压上的电压电平时产生参考电压传输节点高于预定电压电平。

7. 发明授权

US07965109B2 Level detector for a semiconductor memory apparatus 失效
标题翻译：一种用于半导体存储装置的电平检测器
公开(公告)号：US07965109B2
公开(公告)日：2011-06-21
申请号：US11647481
申请日：2006-12-29
申请人： Dong-Keum Kang
发明人： Dong-Keum Kang
IPC分类号： H03D1/00 , H03K5/00
CPC分类号： H03K5/2472 , G11C5/143 , G11C5/147
摘要： A bulk voltage (VBB) level sensor for a semiconductor memory apparatus is disclosed. The VBB level detector includes a reference voltage generator for generating a first reference voltage of which level varies with temperature, a reference voltage comparator for receiving a second reference voltage and the first reference voltage to generate a third reference voltage, a bias generator for receiving the third reference voltage to generate a specific bias level, and a VBB sensor for receiving the bias level to detect VBB level.
摘要翻译：公开了一种用于半导体存储装置的体电压（VBB）电平传感器。 VBB电平检测器包括用于产生电平随温度变化的第一参考电压的参考电压发生器，用于接收第二参考电压的参考电压比较器和用于产生第三参考电压的第一参考电压，用于接收产生特定偏置电平的第三参考电压，以及用于接收偏置电平以检测VBB电平的VBB传感器。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式