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1. 发明授权

US08743617B2 Nonvolatile memory including plural memory cells stacked on substrate 有权
标题翻译：包括堆叠在基板上的多个存储单元的非易失性存储器
公开(公告)号：US08743617B2
公开(公告)日：2014-06-03
申请号：US13429899
申请日：2012-03-26
申请人： Sang-Won Shim , Dong-Hun Kwak , Doosub Lee , Chiweon Yoon
发明人： Sang-Won Shim , Dong-Hun Kwak , Doosub Lee , Chiweon Yoon
IPC分类号： G11C11/34
CPC分类号： G11C5/147 , G11C16/10 , G11C16/30 , G11C16/3418 , H01L27/11582
摘要： According to example embodiments, a nonvolatile memory device includes a memory cell array including a plurality of memory cells stacked on a substrate, a plurality of word lines connected with the memory cell array, a plurality of pass voltage generators, and a voltage control circuit. The pass voltage generators each include a plurality of current paths and are configured to generate pass driving signals applied to unselected word lines of the plurality of word lines. The voltage control circuit is configured to control rising slopes of the pass driving signals generated from the plurality of pass voltage generators, based on adjusting the number of current paths in each pass voltage generator used to generate each driving signal.
摘要翻译：根据示例性实施例，非易失性存储器件包括存储单元阵列，其包括堆叠在衬底上的多个存储单元，与存储单元阵列连接的多个字线，多个通过电压发生器和电压控制电路。通过电压发生器各自包括多个电流路径，并且被配置为产生施加到多个字线的未选字线的通过驱动信号。电压控制电路被配置为基于调整用于产生每个驱动信号的每个通过电压发生器中的电流路径的数量来控制从多个通过电压发生器产生的通过驱动信号的上升沿。

2. 发明申请

US20100254190A1 NONVOLATILE MEMORY DEVICE HAVING DIFFERENT TYPES OF METAL LINES 有权
标题翻译：具有不同类型的金属线的非易失性存储器件
公开(公告)号：US20100254190A1
公开(公告)日：2010-10-07
申请号：US12718067
申请日：2010-03-05
申请人： Doosub Lee
发明人： Doosub Lee
IPC分类号： G11C16/04
CPC分类号： G11C16/0483 , H01L27/11565 , H01L27/11575
摘要： Provided is a nonvolatile memory device, including a memory cell array region, a decoder and an interface region. The memory cell array region includes multiple word lines. The decoder supplies multiple voltages to the word lines through multiple first type metal lines formed of a first metal and multiple second type metal lines formed of a second metal. The interface region connects the first type metal lines to first word lines in a first group, and connects the second type metal lines to second word lines in a second group. The first type metal lines are sequentially disposed to correspond with a positioning order of the first word lines in the first group, and the second type metal lines are sequentially disposed to correspond with a positioning order of the second word lines in the second group.
摘要翻译：提供了一种非易失性存储器件，包括存储单元阵列区域，解码器和接口区域。存储单元阵列区域包括多个字线。解码器通过由第一金属和由第二金属形成的多个第二类型的金属线形成的多个第一类型的金属线向字线提供多个电压。接口区域将第一类型金属线连接到第一组中的第一字线，并将第二类型金属线连接到第二组中的第二字线。顺序地设置第一类型的金属线以对应于第一组中的第一字线的定位顺序，并且第二类型的金属线被顺序地设置成与第二组中的第二字线的定位顺序相对应。

3. 发明申请

US20120300527A1 NONVOLATILE MEMORY INCLUDING PLURAL MEMORY CELLS STACKED ON SUBSTRATE 有权
标题翻译：非易失性存储器，包括堆叠在基板上的多个存储单元
公开(公告)号：US20120300527A1
公开(公告)日：2012-11-29
申请号：US13429899
申请日：2012-03-26
申请人： Sang-Won Shim , DongHun Kwak , Doosub Lee , ChiWeon Yoon
发明人： Sang-Won Shim , DongHun Kwak , Doosub Lee , ChiWeon Yoon
IPC分类号： G11C5/02
CPC分类号： G11C5/147 , G11C16/10 , G11C16/30 , G11C16/3418 , H01L27/11582
摘要： According to example embodiments, a nonvolatile memory device includes a memory cell array including a plurality of memory cells stacked on a substrate, a plurality of word lines connected with the memory cell array, a plurality of pass voltage generators, and a voltage control circuit. The pass voltage generators each include a plurality of current paths and are configured to generate pass driving signals applied to unselected word lines of the plurality of word lines. The voltage control circuit is configured to control rising slopes of the pass driving signals generated from the plurality of pass voltage generators, based on adjusting the number of current paths in each pass voltage generator used to generate each driving signal.
摘要翻译：根据示例性实施例，非易失性存储器件包括存储单元阵列，其包括堆叠在衬底上的多个存储单元，与存储单元阵列连接的多个字线，多个通过电压发生器和电压控制电路。通过电压发生器各自包括多个电流路径，并且被配置为产生施加到多个字线的未选字线的通过驱动信号。电压控制电路被配置为基于调整用于产生每个驱动信号的每个通过电压发生器中的电流路径的数量来控制从多个通过电压发生器产生的通过驱动信号的上升沿。

4. 发明授权

US08189359B2 Nonvolatile memory device having different types of metal lines 有权
标题翻译：具有不同类型金属线路的非易失性存储器件
公开(公告)号：US08189359B2
公开(公告)日：2012-05-29
申请号：US12718067
申请日：2010-03-05
申请人： Doosub Lee
发明人： Doosub Lee
IPC分类号： G11C5/06
CPC分类号： G11C16/0483 , H01L27/11565 , H01L27/11575
摘要： Provided is a nonvolatile memory device, including a memory cell array region, a decoder and an interface region. The memory cell array region includes multiple word lines. The decoder supplies multiple voltages to the word lines through multiple first type metal lines formed of a first metal and multiple second type metal lines formed of a second metal. The interface region connects the first type metal lines to first word lines in a first group, and connects the second type metal lines to second word lines in a second group. The first type metal lines are sequentially disposed to correspond with a positioning order of the first word lines in the first group, and the second type metal lines are sequentially disposed to correspond with a positioning order of the second word lines in the second group.
摘要翻译：提供了一种非易失性存储器件，包括存储单元阵列区域，解码器和接口区域。存储单元阵列区域包括多个字线。解码器通过由第一金属和由第二金属形成的多个第二类型的金属线形成的多个第一类型的金属线向字线提供多个电压。接口区域将第一类型金属线连接到第一组中的第一字线，并将第二类型金属线连接到第二组中的第二字线。顺序地设置第一类型的金属线以对应于第一组中的第一字线的定位顺序，并且第二类型的金属线被顺序地设置成与第二组中的第二字线的定位顺序相对应。

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