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1. 发明公开

US20240136469A1 LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20240136469A1
公开(公告)日：2024-04-25
申请号：US18545746
申请日：2023-12-19
申请人： EPISTAR CORPORATION
发明人： Che-Hung LIN , De-Shan KUO
IPC分类号： H01L33/08 , H01L33/00 , H01L33/22 , H01L33/38 , H01L33/62
CPC分类号： H01L33/08 , H01L33/0093 , H01L33/0095 , H01L33/22 , H01L33/382 , H01L33/62 , H01L2933/0066
摘要： A method of manufacturing a light-emitting element, includes: providing a base having an upper surface and a lower surface; forming a semiconductor stack on the upper surface; removing part of the semiconductor stack to form a pre-defined dicing region surrounding the semiconductor stack; forming a dielectric stack covering the semiconductor stack and the pre-defined dicing region; and applying a first laser having a first wavelength to irradiate the base along the pre-defined dicing region; wherein the dielectric stack has a reflectance of 10%-50% and/or a transmittance of 50%-90% for the first wavelength.

2. 发明申请

US20220149234A1 LIGHT-EMITTING DEVICE WITH DISTRIBUTED BRAGG REFLECTION STRUCTURE 有权
公开(公告)号：US20220149234A1
公开(公告)日：2022-05-12
申请号：US17584004
申请日：2022-01-25
申请人： EPISTAR CORPORATION
发明人： Heng-Ying CHO , De-Shan KUO
IPC分类号： H01L33/10 , H01L25/075
摘要： A light-emitting device includes a substrate having a first surface and a second surface opposite to the first surface; a light-emitting stack formed on the first surface; and a distributed Bragg reflection structure formed on the second surface, wherein the distributed Bragg reflection structure includes a first film stack and a second film stack; wherein the first film stack includes a plurality of first dielectric-layer pairs consecutively arranged, the second film stack includes a plurality of second dielectric-layer pairs consecutively arranged, each of the first dielectric-layer pairs and each of the second dielectric-layer pairs respectively includes a first dielectric layer having an optical thickness and a second dielectric layer having an optical thickness; wherein the second dielectric layer has a refractive index higher than that of the first dielectric layer; wherein in each of the first dielectric-layer pairs of the first film stack, the optical thickness of the first dielectric layer to the optical thickness of the second dielectric layer have a first ratio, and in each of the second dielectric-layer pairs of the second film stack, the optical thickness of the first dielectric layer to the optical thickness of the second dielectric layer have a second ratio;
wherein the first ratio is greater than the second ratio; and wherein the first film stack is farther from the second surface of the substrate than the second film stack.

3. 发明申请

US20210074890A1 ELECTRODE STRUCTURE OF LIGHT EMITTING DEVICE 有权
公开(公告)号：US20210074890A1
公开(公告)日：2021-03-11
申请号：US17102171
申请日：2020-11-23
申请人： EPISTAR CORPORATION
发明人： De-Shan KUO , Ting-Chia KO , Chun-Hsiang TU , Po-Shun CHIU
IPC分类号： H01L33/42 , H01L33/40 , H01L27/15 , H01L33/06 , H01L33/08 , H01L33/30 , H01L33/32 , H01L33/60 , H01L33/62
摘要： A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

4. 发明申请

US20190229001A1 CHIP TRANSFERRING METHOD AND THE APPARATUS THEREOF 审中-公开
公开(公告)号：US20190229001A1
公开(公告)日：2019-07-25
申请号：US16257886
申请日：2019-01-25
申请人： EPISTAR CORPORATION
发明人： Min-Hsun HSIEH , De-Shan KUO , Chang-Lin LEE , Jhih-Yong YANG
IPC分类号： H01L21/677 , H01L21/683 , H01L33/00
摘要： A transferring chips method, including providing a plurality of chips on a first load-bearing structure; dividing the first load-bearing structure into a plurality of blocks, and each of the plurality of blocks including multiple chips of the plurality of chips; measuring a characteristic value of each of the plurality of chips; respectively calculating an average characteristic value of each of the plurality of blocks based on the characteristic values of the multiple chips of each of the plurality of blocks; and transferring the multiple chips of at least two blocks of the plurality of blocks with the average characteristic values within the same range to a second load-bearing structure.

5. 发明申请

US20190035846A1 LIGHT-EMITTING STRUCTURE 审中-公开
公开(公告)号：US20190035846A1
公开(公告)日：2019-01-31
申请号：US16037862
申请日：2018-07-17
申请人： EPISTAR CORPORATION
发明人： Chien-Fu SHEN , Chao-Hsing CHEN , Tsun-Kai KO , Schang-Jing HON , Sheng-Jie HSU , De-Shan KUO , Hsin-Ying WANG , Chiu-Lin YAO , Chien-Fu HUANG , Hsin-Mao LIU , Chien-Kai CHUNG
IPC分类号： H01L27/15 , H01L33/44 , H01L33/38 , H01L25/075 , H01L33/62 , H01L33/20
摘要： Disclosed herein is a light-emitting device. The light-emitting device includes a substrate with a top surface; a first light-emitting structure unit and a second structure light-emitting unit disposed on the top surface, the first light-emitting structure unit and the second light-emitting structure unit being spaced apart from each other, wherein each of the first light-emitting structure unit and the second light-emitting structure unit includes a lower layer having a first conductivity and an upper layer having a second conductivity; a trench between the first light-emitting structure unit and the second light-emitting structure unit, including a bottom portion which is a part of the top surface; an isolation layer, disposed on the trench and covering the bottom portion; and an electrical connection, electrically connecting the first light-emitting structure unit and the second light-emitting structure unit; wherein the lower layer includes an inclined sidewall and the electrical connection contacts the inclined sidewall.

6. 发明申请

US20170365741A1 LIGHT-EMITTING DEVICE 审中-公开
公开(公告)号：US20170365741A1
公开(公告)日：2017-12-21
申请号：US15692759
申请日：2017-08-31
申请人： EPISTAR CORPORATION
发明人： Chien-Kai CHUNG , Po-Shun CHIU , Hsin-Ying WANG , De-Shan KUO , Tsun-Kai KO , Yu-Ting HUANG
IPC分类号： H01L33/22 , H01L33/20 , H01L33/38 , H01L33/14
CPC分类号： H01L33/22 , H01L33/145 , H01L33/20 , H01L33/38 , H01L33/382
摘要： A light-emitting device includes: a rectangular shape with a 1st side, a 2nd side opposite to the 1st side, and a 3rd side connecting the 1st and the 2nd sides; a first electrode pad formed adjacent to the 3rd side; a second electrode pad formed adjacent to the 2nd side; a first extension electrode, extending from the first electrode pad in a direction away from the 3rd side and bended toward the 2nd side; and a second extension electrode, including a first and a second branches respectively extending from the second electrode pad; wherein a distance between the first electrode pad and the 3rd side is smaller than a distance between the second electrode pad and the 3rd side; wherein an end portion of the first branch includes a first arc bending to the 3rd side and a minimum distance between the first branch and the 1st side is smaller than a minimum distance between the second branch and the 1st side.

7. 发明申请

US20160307961A1 LIGHT-EMITTING STRUCTURE 审中-公开
标题翻译：发光结构
公开(公告)号：US20160307961A1
公开(公告)日：2016-10-20
申请号：US15196717
申请日：2016-06-29
申请人： EPISTAR CORPORATION
发明人： Chien-Fu SHEN , Chao-Hsing CHEN , Tsun-Kai KO , Schang-Jing HON , Sheng-Jie HSU , De-Shan KUO , Hsin-Ying WANG , Chiu-Lin YAO , Chien-Fu HUANG , Hsin-Mao LIU , Chien-Kai CHUNG
IPC分类号： H01L27/15 , H01L33/38 , H01L33/62 , H01L33/20 , H01L33/44
CPC分类号： H01L27/156 , H01L25/0753 , H01L27/153 , H01L33/20 , H01L33/382 , H01L33/385 , H01L33/44 , H01L33/62 , H01L2924/0002 , H01L2924/00
摘要： Disclosed herein is a light-emitting device. The light-emitting device includes a substrate; a first light-emitting unit and a second light-emitting unit, separately formed on the substrate; a trench between the first and the second light-emitting units, including a bottom portion exposing the substrate; an insulating layer, conformably formed on the trench and covering the bottom portion and sidewalls of the first and the second light-emitting units; and an electrical connection, formed on the insulating layer and electrically connecting the first and the second light-emitting units. The electrical connection includes a bridging portion covering the trench and a joining portion extending from the bridging portion and formed on the first and the second light-emitting units; wherein the bridging portion is wider than the joining portion; wherein a part of the insulating layer is formed under the joining portion.
摘要翻译：这里公开了一种发光装置。发光装置包括：基板; 分别形成在基板上的第一发光单元和第二发光单元; 在第一和第二发光单元之间的沟槽，包括露出衬底的底部; 绝缘层，顺应地形成在沟槽上并覆盖第一和第二发光单元的底部和侧壁; 以及形成在绝缘层上并电连接第一和第二发光单元的电连接。电气连接包括覆盖沟槽的桥接部分和从桥接部分延伸并形成在第一和第二发光单元上的接合部分; 其中所述桥接部分比所述接合部分宽; 其中，所述绝缘层的一部分形成在所述接合部的下方。

8. 发明申请

US20160254409A1 METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT 审中-公开
标题翻译：制造发光元件的方法
公开(公告)号：US20160254409A1
公开(公告)日：2016-09-01
申请号：US15149837
申请日：2016-05-09
申请人： EPISTAR CORPORATION
发明人： Min-Yen TSAI , De-Shan KUO
IPC分类号： H01L33/00 , H01L33/46 , H01L33/20
CPC分类号： H01L33/0079 , H01L33/20 , H01L33/46 , H01L2933/0033 , H01L2933/0058
摘要： A method for manufacturing a light-emitting element, including steps of: providing a wafer-level element including a wafer and a light-emitting stack on the wafer, wherein the wafer including an upper surface and a bottom surface, and light-emitting stack is formed on the upper surface of the wafer; forming a light-emitting stack on the upper surface of the wafer; cutting the wafer from one of the bottom surface or the top surface of the wafer by a water-jet laser having a first beam size; cutting the wafer from the other one of the bottom surface or the upper surface of the wafer by the water-jet laser having a second beam size; and dividing the wafer-level element wafer and the light-emitting stack into a plurality of light-emitting dies.
摘要翻译：一种制造发光元件的方法，包括以下步骤：在晶片上提供包括晶片和发光叠层的晶片级元件，其中包括上表面和底表面的晶片和发光叠层形成在晶片的上表面上; 在晶片的上表面上形成发光叠层; 通过具有第一光束尺寸的喷水激光从晶片的底表面或顶表面中的一个切割晶片; 通过具有第二光束尺寸的喷水激光从晶片的底表面或上表面中的另一个切割晶片; 并将晶片级元件晶片和发光叠层分割成多个发光模具。

9. 发明申请

US20150060909A1 LIGHT-EMITTING DEVICE AND THE MANUFACTURING METHOD THEREOF 有权
标题翻译：发光装置及其制造方法
公开(公告)号：US20150060909A1
公开(公告)日：2015-03-05
申请号：US14013166
申请日：2013-08-29
申请人： Epistar Corporation
发明人： Juin-Yang CHEN , De-Shan KUO , Chun-Hsiang TU , Po-Shun CHIU , Chien-Kai CHUNG , Hui-Chun YEH , Min-Yen TSAI , Tsun-Kai KO , Chun-Teng KO
IPC分类号： H01L33/44 , H01L33/42
CPC分类号： H01L33/38 , H01L33/0095 , H01L33/22 , H01L33/42
摘要： A light-emitting device comprises: a first semiconductor layer; a transparent conductive oxide layer including a diffusion region having a first metal material and a non-diffusion region devoid of the first metal material, wherein the non-diffusion region is closer to the first semiconductor layer than the diffusion region; and a metal layer formed on the transparent conductive oxide layer, wherein the metal layer is pervious to a light emitted from the active layer and comprises a pattern.
摘要翻译：发光器件包括：第一半导体层; 透明导电氧化物层，其包括具有第一金属材料的扩散区域和不具有第一金属材料的非扩散区域，其中所述非扩散区域比所述扩散区域更靠近所述第一半导体层; 以及形成在所述透明导电氧化物层上的金属层，其中所述金属层可透过从所述有源层发射的光并且包括图案。

10. 发明申请

US20140093991A1 METHOD FOR MANUFACTURING HIGH EFFICIENCY LIGHT-EMITTING DIODES 有权
标题翻译：制造高效发光二极管的方法
公开(公告)号：US20140093991A1
公开(公告)日：2014-04-03
申请号：US14097150
申请日：2013-12-04
申请人： Epistar Corporation
发明人： Chien-Kai CHUNG , Ya Lan YANG , Ting-Chia KO , Tsun-Kai KO , Jung-Min HWANG , Schang-Jing HON , De-Shan KUO , Chien-Fu SHEN , Ta-Cheng HSU , Min-Hsun HSIEH
IPC分类号： H01L33/00 , H01L21/304 , H01L21/02
CPC分类号： H01L33/005 , H01L21/02057 , H01L21/3043 , H01L33/0095
摘要： A method of manufacturing a light-emitting device comprising the steps of cutting a substrate by a laser beam to form a cavity in the substrate and generate a by-product directly on the substrate by the cutting, and removing the by-product by a chemical solution containing an acid under a predetermined cleaning temperature.
摘要翻译：一种制造发光器件的方法，包括以下步骤：通过激光束切割衬底以在衬底中形成空腔，并通过切割直接在衬底上产生副产物，并通过化学物质除去副产物溶液在预定的清洁温度下含有酸。

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