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1. 发明授权

US10741721B2 Light-emitting device and manufacturing method thereof 有权
公开(公告)号：US10741721B2
公开(公告)日：2020-08-11
申请号：US16374282
申请日：2019-04-03
申请人： EPISTAR CORPORATION
发明人： Cheng-Feng Yu , Ching-Yuan Tsai , Yao-Ru Chang , Hsin-Chan Chung , Shih-Chang Lee , Wen-Luh Liao , Cheng-Hsing Chiang , Kuo-Feng Huang , Hsu-Hsuan Teng , Hung-Ta Cheng , Yung-Fu Chang
IPC分类号： H01L33/06 , H01L33/60 , H01L33/64 , H01L33/00 , H01L33/30 , H01L33/42 , H01L33/46 , H01L33/62
摘要： A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

2. 发明授权

US10367118B2 Light-emitting diode 有权
公开(公告)号：US10367118B2
公开(公告)日：2019-07-30
申请号：US15266249
申请日：2016-09-15
申请人： EPISTAR CORPORATION
发明人： Yu-Ren Peng , Tzu-Chieh Hsu , Shih-I Chen , Rong-Ren Lee , Hsin-Chan Chung , Wen-Luh Liao , Yi-Chieh Lin
IPC分类号： H01L33/10 , H01L33/12 , H01L33/42 , H01L33/38 , H01L33/46 , H01L33/30
摘要： A light-emitting diode, comprises an active layer for emitting a light ray; an upper semiconductor stack on the active layer, wherein the upper semiconductor stack comprises a window layer; a reflector; and a lower semiconductor stack between the active layer and the reflector; wherein the thickness of the window layer is small than or equal to 3 μm, and the thickness of the lower semiconductor stack is small than or equal to 1 μm.

3. 发明授权

US09660146B2 Light-emitting element 有权
公开(公告)号：US09660146B2
公开(公告)日：2017-05-23
申请号：US15070727
申请日：2016-03-15
申请人： EPISTAR CORPORATION
发明人： Ching-Yuan Tsai , Hsin-Chan Chung , Wen-Luh Liao
IPC分类号： H01L33/00 , H01L33/44 , H01L33/42 , H01L33/38 , H01L33/46 , H01L33/14
CPC分类号： H01L33/44 , H01L33/14 , H01L33/38 , H01L33/42 , H01L33/46 , H01L2224/48091 , H01L2224/73265 , H01L2924/00014
摘要： A light-emitting element comprises a light-emitting stack comprising an active layer for emitting a light; a window layer on the light-emitting stack; and a first insulative layer having a first refractive index on the window layer; wherein the first insulative layer has a first refractive index, and the window layer has a second refractive index, and a difference between the first refractive index and the second refractive index is larger than 1.5.

4. 发明授权

US10756134B2 Light-emitting device 有权
公开(公告)号：US10756134B2
公开(公告)日：2020-08-25
申请号：US15926708
申请日：2018-03-20
申请人： EPISTAR CORPORATION
发明人： Hsin-Chan Chung , Wen-Luh Liao , Shih-Chang Lee
IPC分类号： H01L33/08 , H01L27/15 , H01L33/06 , H01L33/30 , H01L33/60 , H01L33/62 , H01L33/00 , H01L33/44 , H01L33/38 , H01L33/22 , H01L33/46 , H01L33/42
摘要： A light-emitting device includes: a substrate comprising a first side; multiple semiconductor stacks on the first side and separated from each other, wherein each of the multiple semiconductor stacks comprises a light extraction area; multiple electrode pads on the multiple semiconductor stacks; and a blocking layer between one of the semiconductor stacks and the substrate. The multiple semiconductor stacks comprises a first semiconductor stack and a second semiconductor stack, and the first semiconductor stack and the second semiconductor stack are independently controlled to emit light.

5. 发明授权

US10461223B2 Semiconductor device 有权
公开(公告)号：US10461223B2
公开(公告)日：2019-10-29
申请号：US16128604
申请日：2018-09-12
申请人： EPISTAR CORPORATION
发明人： Yung-Fu Chang , Hsin-Chan Chung , Hung-Ta Cheng , Wen-Luh Liao , Shih-Chang Lee , Chih-Chiang Lu , Yi-Ming Chen , Yao-Ning Chan , Chun-Fu Tsai
IPC分类号： H01L33/38 , H01L33/30
摘要： A semiconductor device includes a semiconductor stack comprising a surface, and an electrode structure comprises an electrode pad formed on the surface, and the electrode structure further comprises a first extending electrode, a second extending electrode and a third extending electrode connecting to the electrode pad. The first extending electrode is closer to a periphery of the surface than the third extending electrode is, and the second extending electrode is between the first extending electrode and the third extending electrode. From a top view of the semiconductor device, the first extending electrode, the second extending electrode and the third extending electrode respectively include a first curve having a first angle θ1, a second curve having a second angle θ2 and a third curve having a third angle θ3, wherein θ3>θ2>θ1 .

6. 发明授权

US10312407B2 Light-emitting device and manufacturing method thereof 有权
公开(公告)号：US10312407B2
公开(公告)日：2019-06-04
申请号：US16041398
申请日：2018-07-20
申请人： EPISTAR CORPORATION
发明人： Cheng-Feng Yu , Ching-Yuan Tsai , Yao-Ru Chang , Hsin-Chan Chung , Shih-Chang Lee , Wen-Luh Liao , Cheng-Hsing Chiang , Kuo-Feng Huang , Hsu-Hsuan Teng , Hung-Ta Cheng , Yung-Fu Chang
IPC分类号： H01L27/15 , H01L33/06 , H01L33/00 , H01L33/30 , H01L33/42 , H01L33/46 , H01L33/62 , H01L33/60 , H01L33/64
摘要： A light-emitting device is provided. The light-emitting device comprises a substrate; an insulating layer on the substrate, wherein the insulating layer comprises a first hole; a light-emitting stack on the insulating layer and comprising an active region comprising a top surface, wherein the top surface comprises a first part and a second part; and an opaque layer covering the first part of the top surface and exposing the second part of the top surface, wherein the second part is directly above the first hole.

7. 发明授权

US09748443B2 Light emitting device 有权
公开(公告)号：US09748443B2
公开(公告)日：2017-08-29
申请号：US15410441
申请日：2017-01-19
申请人： EPISTAR CORPORATION
发明人： Yao-Ru Chang , Wen-Luh Liao , Chun-Yu Lin , Hsin-Chan Chung , Hung-Ta Cheng
IPC分类号： H01L33/00 , H01L33/30 , H01L33/38 , H01L33/62 , H01L33/44 , H01L33/24
CPC分类号： H01L33/44 , H01L33/08 , H01L33/20 , H01L33/22 , H01L33/24 , H01L33/305 , H01L33/38 , H01L33/62
摘要： The present disclosure provides a light-emitting device, comprising: a light-emitting stack comprising an active layer, wherein the active layer is configured to emit light; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment; and a light-absorbing layer having a first portion surrounding the first semiconductor layer in a top view.

8. 发明授权

US10700240B2 Light emitting device 有权
公开(公告)号：US10700240B2
公开(公告)日：2020-06-30
申请号：US16700614
申请日：2019-12-02
申请人： EPISTAR CORPORATION
发明人： Yao-Ru Chang , Wen-Luh Liao , Chun-Yu Lin , Hsin-Chan Chung , Hung-Ta Cheng
IPC分类号： H01L33/00 , H01L33/44 , H01L33/38 , H01L33/24 , H01L33/62 , H01L33/30 , H01L33/22 , H01L33/08 , H01L33/20
摘要： The present disclosure provides a light-emitting device. The light-emitting device includes a light emitting area and an electrode area. The light-emitting area includes a first semiconductor structure having a first active layer and a second semiconductor structure having a second active layer. The electrode area includes an external electrode structure surrounding the second semiconductor structure in a top view. The light-emitting area has a shape of circle or polygon in the top view. When the first semiconductor structure is driven by a first current, the first active layer can emit a first light with a first main wavelength. When the second semiconductor structure is driven by a second current, the active layer of the second semiconductor structure can emit a second light with a second main wavelength.

9. 发明授权

US10109771B2 Light emitting device 有权
公开(公告)号：US10109771B2
公开(公告)日：2018-10-23
申请号：US15653038
申请日：2017-07-18
申请人： EPISTAR CORPORATION
发明人： Yao-Ru Chang , Wen-Luh Liao , Chun-Yu Lin , Hsin-Chan Chung , Hung-Ta Cheng
IPC分类号： H01L33/00 , H01L33/44 , H01L33/38 , H01L33/22 , H01L33/20 , H01L33/08
摘要： The present disclosure provides a light-emitting device, comprising: a light-emitting stack; a first semiconductor layer on the light-emitting stack; a first electrode formed on the first semiconductor layer and comprising an inner segment, an outer segment, and a plurality of extending segments electrically connecting the inner segment with the outer segment.

10. 发明申请

US20160336482A1 LIGHT-EMITTING DEVICE 审中-公开
标题翻译：发光装置
公开(公告)号：US20160336482A1
公开(公告)日：2016-11-17
申请号：US14709985
申请日：2015-05-12
申请人： EPISTAR CORPORATION
发明人： Shao-Ping Lu , Cheng-Feng Yu , Wen-Luh Liao , Hsin-Chan Chung , Shih-Chang Lee , Chih-Chiang Lu
IPC分类号： H01L33/08 , H01L33/10 , H01L33/22
CPC分类号： H01L25/0756 , H01L33/10 , H01L33/22 , H01L33/38
摘要： An object of the present invention is to provide a light-emitting device comprising: a substrate, a first light-emitting semiconductor stack having a first transverse width, the first light-emitting semiconductor stack comprising a first active layer emitting a first radiation of a first dominant wavelength during operation; a second light-emitting semiconductor stack having a second transverse width less than the first transverse width and comprising a second active layer emitting a second radiation of a second dominant wavelength shorter than the first dominant wavelength during operation; and a first conductive connecting structure between the first light-emitting semiconductor stack and the second light-emitting semiconductor stack, wherein the first conductive connecting structure is lattice-mismatched to the first active layer and to the second active layer, the first light-emitting semiconductor stack is between the substrate and the second light-emitting semiconductor stack.
摘要翻译：本发明的目的是提供一种发光器件，其包括：衬底，具有第一横向宽度的第一发光半导体堆叠，所述第一发光半导体堆叠包括发射第一辐射的第一有源层，运行中第一主波长; 第二发光半导体堆叠，其具有小于第一横向宽度的第二横向宽度，并且包括在操作期间发射比第一主波长短的第二主波长的第二辐射的第二有源层; 以及在第一发光半导体堆叠和第二发光半导体堆叠之间的第一导电连接结构，其中第一导电连接结构与第一有源层和第二有源层晶格失配，第一发光半导体堆叠在基板和第二发光半导体堆叠之间。

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