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1. 发明申请

US20120018722A1 ION-SENSITIVE SENSOR WITH MULTILAYER CONSTRUCTION IN THE SENSITIVE REGION 有权
标题翻译：敏感区域的多层结构的敏感传感器
公开(公告)号：US20120018722A1
公开(公告)日：2012-01-26
申请号：US13260739
申请日：2010-03-15
申请人： Eberhard Kurth , Christian Kunath , Torsten Pechstein
发明人： Eberhard Kurth , Christian Kunath , Torsten Pechstein
IPC分类号： H01L29/66 , H01L21/02
CPC分类号： G01N27/227
摘要： An ion-sensitive sensor with an EIS structure includes: a semiconductor substrate, on which a layer of a substrate oxide 103 is produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable intermediate insulator, which is deposited on the adapting or matching layer; and a sensor layer, which comprises a tantalum oxide or a tantalum oxynitride, and which is applied on the intermediate insulator; wherein the intermediate insulator comprises hafnium oxide or zirconium oxide or a mixture of zirconium oxide and hafnium oxide, and wherein the adapting or matching layer differs in its chemical composition and/or in its structure from the intermediate insulator and from the substrate oxide.
摘要翻译：具有EIS结构的离子敏感传感器包括：半导体衬底，其上制备衬底氧化物103的层; 在衬底氧化物上制备的适配或匹配层; 化学稳定的中间绝缘体，其沉积在适配层或匹配层上; 以及传感器层，其包括氧化钽或氮氧化钽，并且被施加在中间绝缘体上; 其中所述中间绝缘体包括氧化铪或氧化锆或氧化锆和氧化铪的混合物，并且其中所述适配或匹配层的化学组成和/或其结构与所述中间绝缘体和所述衬底氧化物不同。

2. 发明授权

US08461587B2 Ion-sensitive sensor with multilayer construction in the sensitive region 有权
标题翻译：离子敏感传感器在敏感区域具有多层结构
公开(公告)号：US08461587B2
公开(公告)日：2013-06-11
申请号：US13260739
申请日：2010-03-15
申请人： Eberhard Kurth , Christian Kunath , Torsten Pechstein
发明人： Eberhard Kurth , Christian Kunath , Torsten Pechstein
IPC分类号： H01L29/66 , H01L21/02
CPC分类号： G01N27/227
摘要： An ion-sensitive sensor with an EIS structure includes: a semiconductor substrate, on which a layer of a substrate oxide 103 is produced; an adapting or matching layer, which is prepared on the substrate oxide; a chemically stable intermediate insulator, which is deposited on the adapting or matching layer; and a sensor layer, which comprises a tantalum oxide or a tantalum oxynitride, and which is applied on the intermediate insulator; wherein the intermediate insulator comprises hafnium oxide or zirconium oxide or a mixture of zirconium oxide and hafnium oxide, and wherein the adapting or matching layer differs in its chemical composition and/or in its structure from the intermediate insulator and from the substrate oxide.
摘要翻译：具有EIS结构的离子敏感传感器包括：半导体衬底，其上制备衬底氧化物103的层; 在衬底氧化物上制备的适配或匹配层; 化学稳定的中间绝缘体，其沉积在适配层或匹配层上; 以及传感器层，其包括氧化钽或氮氧化钽，并且被施加在中间绝缘体上; 其中所述中间绝缘体包括氧化铪或氧化锆或氧化锆和氧化铪的混合物，并且其中所述适配或匹配层的化学组成和/或其结构与所述中间绝缘体和所述衬底氧化物不同。

3. 发明授权

US07321143B2 Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor 有权
标题翻译：离子敏感场效应晶体管和用于产生离子敏感场效应晶体管的方法
公开(公告)号：US07321143B2
公开(公告)日：2008-01-22
申请号：US11210420
申请日：2005-08-24
申请人： Christian Kunath , Eberhard Kurth
发明人： Christian Kunath , Eberhard Kurth
IPC分类号： H01L29/76
CPC分类号： G01N27/414 , G01N27/333
摘要： An ion-sensitive field effect transistor includes a substrate on which there are formed a source region and a drain region. Above a channel region, the ion-sensitive field effect transistor has a gate with a sensitive layer including a metal oxide nitride mixture and/or a metal oxide nitride mixture compound.
摘要翻译：离子敏感场效应晶体管包括其上形成有源极区和漏极区的衬底。在沟道区域之上，离子敏感场效应晶体管具有栅极，其具有包括金属氧化物氮化物混合物和/或金属氧化物氮化物混合物化合物的敏感层。

4. 发明申请

US20060035420A1 Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor 有权
标题翻译：离子敏感场效应晶体管和离子敏感场效应晶体管的制造方法
公开(公告)号：US20060035420A1
公开(公告)日：2006-02-16
申请号：US11210420
申请日：2005-08-24
申请人： Christian Kunath , Eberhard Kurth
发明人： Christian Kunath , Eberhard Kurth
IPC分类号： H01L21/84
CPC分类号： G01N27/414 , G01N27/333
摘要： An ion-sensitive field effect transistor includes a substrate on which there are formed a source region and a drain region. Above a channel region, the ion-sensitive field effect transistor has a gate with a sensitive layer including a metal oxide nitride mixture and/or a metal oxide nitride mixture compound.
摘要翻译：离子敏感场效应晶体管包括其上形成有源极区和漏极区的衬底。在沟道区域之上，离子敏感场效应晶体管具有栅极，其具有包括金属氧化物氮化物混合物和/或金属氧化物氮化物混合物化合物的敏感层。

5. 发明申请

US20050263798A1 Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor 有权
标题翻译：离子敏感场效应晶体管和用于产生离子敏感场效应晶体管的方法
公开(公告)号：US20050263798A1
公开(公告)日：2005-12-01
申请号：US11126846
申请日：2005-05-10
申请人： Eberhard Kurth , Christian Kunath , Heinrich Gruger
发明人： Eberhard Kurth , Christian Kunath , Heinrich Gruger
IPC分类号： G01N27/333 , G01N27/414 , H01L23/58
CPC分类号： G01N27/414 , G01N27/333
摘要： An ion-sensitive field effect transistor has a gate consisting of metal silicate. The gate of metal silicate provides high resistance to aggressive measured substances and further has a high long-term stability. The gate of the ion-sensitive field effect transistor may include a single layer gate, wherein the gate is arranged directly on the channel region.
摘要翻译：离子敏感场效应晶体管具有由金属硅酸盐组成的栅极。金属硅酸盐浇口对侵蚀性测量物质提供高抗性，并具有较高的长期稳定性。离子敏感场效应晶体管的栅极可以包括单层栅极，其中栅极直接布置在沟道区上。

6. 发明授权

US06891655B2 High energy, low energy density, radiation-resistant optics used with micro-electromechanical devices 有权
标题翻译：高能量，低能量密度，与微机电设备一起使用的耐辐射光学元件
公开(公告)号：US06891655B2
公开(公告)日：2005-05-10
申请号：US10335981
申请日：2003-01-02
申请人： Thomas J. Grebinski , Ulrike A. Dauderstadt , Torbjörn Sandström , Ulric B. Ljungblad , Christian Kunath , Eberhard Kurth
发明人： Thomas J. Grebinski , Ulrike A. Dauderstadt , Torbjörn Sandström , Ulric B. Ljungblad , Christian Kunath , Eberhard Kurth
IPC分类号： B81B3/00 , G02B26/00
CPC分类号： G02B1/14 , B81B7/0012 , B81B2201/042 , G02B1/105 , G02B26/0833 , G03F7/70291 , G03F7/70983
摘要： The present invention includes methods and devices that improve the radiation-resistance of a movable micromechanical optical element. In particular, a radiation-resistant layer is added to a movable micro-mechanical optical element, suitable to reduce the surface and bulk material changes to the element that result from exposure to pulsed laser energy densities less than 100 micro-joules per square centimeter and at wavelengths less than or equal to about 248 nm.
摘要翻译：本发明包括提高可移动微机械光学元件的耐辐射性的方法和装置。特别地，耐辐射层被添加到可移动的微机械光学元件中，适于减少暴露于小于100微焦/平方厘米的脉冲激光能量密度而导致的元件的表面和体材料变化，以及波长小于或等于约248nm。

7. 发明授权

US5602467A Circuit for measuring ion concentrations in solutions 失效
标题翻译：用于测量溶液中离子浓度的电路
公开(公告)号：US5602467A
公开(公告)日：1997-02-11
申请号：US392792
申请日：1995-04-24
申请人： Mathias Krauss , Beate Hildebrandt , Christian Kunath , Eberhard Kurth
发明人： Mathias Krauss , Beate Hildebrandt , Christian Kunath , Eberhard Kurth
IPC分类号： G01N27/414 , G01N27/416 , G01R27/26
CPC分类号： G01N27/4148
摘要： A circuit layout for measuring ion concentrations in solutions using ion-sitive field effect transistors is provided. The circuit layout makes it possible to represent the threshold voltage difference of two ISFETs directly and independently of technological tolerances, operationally caused parameter fluctuations, and ambient influences. The circuit layout includes two measuring or test amplifiers, with in each case two differently or identically sensitive ISFETs and two identical FETs. The ISFETs and FETs are connected in such a manner that at the output of the first measuring amplifier occurs the difference of the mean value of the two ISFET threshold voltages and the FET threshold voltage and at the output of the second measuring amplifier occurs the difference of the two ISFET threshold voltages. The output of the first amplifier is connected to the common reference electrode of the four ISFETs.
摘要翻译： PCT No.PCT / DE93 / 00690 Sec。 371日期1995年04月24日 102（e）日期1995年4月24日PCT提交1993年8月4日PCT公布。公开号WO94 / 06005 日期1994年3月17日提供了使用离子敏感场效应晶体管测量溶液中离子浓度的电路布局。电路布局使得可以直接和独立于工艺公差，可操作地引起参数波动和环境影响来表示两个ISFET的阈值电压差。电路布局包括两个测量或测试放大器，每种情况下两个不同或相同的ISFET和两个相同的FET。 ISFET和FET以这样的方式连接，使得在第一测量放大器的输出处发生两个ISFET阈值电压的平均值和FET阈值电压的差异，并且在第二测量放大器的输出处的差异发生在两个ISFET阈值电压。第一放大器的输出连接到四个ISFET的公共参考电极。

8. 发明授权

US07728363B2 Protective structure for semiconductor sensors 有权
标题翻译：半导体传感器的保护结构
公开(公告)号：US07728363B2
公开(公告)日：2010-06-01
申请号：US11936962
申请日：2007-11-08
申请人： Stephan Sorge , Christian Kunath , Eberhard Kurth
发明人： Stephan Sorge , Christian Kunath , Eberhard Kurth
IPC分类号： H01L29/68
CPC分类号： G01N27/414
摘要： A protective structure for a semiconductor sensor integrated in a semiconductor substrate for use in a state that is in direct contact with a measuring medium has a semiconducting layer that is applied to the semiconductor substrate, a metal layer and an insulating layer. The insulating layer is disposed between the semiconducting layer and the metal layer and electrically insulates same.
摘要翻译：集成在与测量介质直接接触的状态的半导体衬底中的半导体传感器的保护结构具有施加到半导体衬底，金属层和绝缘层的半导体层。绝缘层设置在半导电层和金属层之间并且与其电绝缘。

9. 发明授权

US07355200B2 Ion-sensitive field effect transistor and method for producing an ion-sensitive field effect transistor 有权
标题翻译：离子敏感场效应晶体管和用于产生离子敏感场效应晶体管的方法
公开(公告)号：US07355200B2
公开(公告)日：2008-04-08
申请号：US11126846
申请日：2005-05-10
申请人： Eberhard Kurth , Christian Kunath , Heinrich Grüger
发明人： Eberhard Kurth , Christian Kunath , Heinrich Grüger
IPC分类号： H01L23/58
CPC分类号： G01N27/414 , G01N27/333
摘要： An ion-sensitive field effect transistor has a gate consisting of metal silicate. The gate of metal silicate provides high resistance to aggressive measured substances and further has a high long-term stability. The gate of the ion-sensitive field effect transistor may include a single layer gate, wherein the gate is arranged directly on the channel region.
摘要翻译：离子敏感场效应晶体管具有由金属硅酸盐组成的栅极。金属硅酸盐浇口对侵蚀性测量物质提供高抗性，并具有较高的长期稳定性。离子敏感场效应晶体管的栅极可以包括单层栅极，其中栅极直接布置在沟道区上。

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