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1. 发明申请

US20080075290A1 Secure device having key management function and information processing apparatus 有权
标题翻译：具有密钥管理功能的安全设备和信息处理设备
公开(公告)号：US20080075290A1
公开(公告)日：2008-03-27
申请号：US11893168
申请日：2007-08-15
申请人： Naoki Nishiguchi , Eiji Hasegawa
发明人： Naoki Nishiguchi , Eiji Hasegawa
IPC分类号： H04L9/08 , H04L9/00
CPC分类号： G06F21/80 , G06F21/10 , G06F21/602 , G06F21/72 , G06F2221/0755 , G06F2221/0784 , H04L9/0822 , H04L9/0877 , H04L9/0897 , H04L2209/60
摘要： A secure device has an input unit for dividing content into a plurality of blocks and inputting the plurality of blocks, a key generating unit for sequentially generating keys for encrypting one or plural blocks, a content encrypting unit for encrypting the one or plural blocks by using the generated key, a key information generating unit for generating key information for restoring the generated key used for the encrypting by the generated key, and a storage control unit for outputting contents of each of the blocks encrypted by the content encrypting unit and the key information generated by the key information generating unit to an external storage. The key sequentially generated by the key generating unit is newly generated when a predetermined condition is satisfied, and varies by every one or plural blocks.
摘要翻译：安全装置具有用于将内容分割成多个块并输入多个块的输入单元，用于顺序地生成用于加密一个或多个块的密钥的密钥生成单元，通过使用用于加密一个或多个块的内容加密单元所生成的密钥，用于生成用于恢复由所生成的密钥进行加密的生成密钥的密钥信息的密钥信息生成单元，以及用于输出由内容加密单元加密的每个块的内容的密码信息和密钥信息由密钥信息生成单元生成到外部存储器。当满足预定条件时，由密钥产生单元顺序生成的密钥新生成，并且每一个或多个块变化。

2. 发明申请

US20070005512A1 IC chip, board, information processing equipment and storage medium 失效
标题翻译： IC芯片，板，信息处理设备和存储介质
公开(公告)号：US20070005512A1
公开(公告)日：2007-01-04
申请号：US11355086
申请日：2006-02-16
申请人： Naoki Nishiguchi , Eiji Hasegawa
发明人： Naoki Nishiguchi , Eiji Hasegawa
IPC分类号： H04L9/00
CPC分类号： G06F21/72 , G06Q20/3829 , H04L9/0891 , H04L9/0897 , H04L2209/60
摘要： An IC chip, a board, information processing equipment, and a storage medium are provided that can prevent, even when information is transferred between a plurality of programs, leaking of the right protection algorithm of information in connection with the transfer. A security board is included an IC chip having a secure module. The secure module receives an encryption key request signal, and generates a communication encryption key every time when the encryption key request signal is received, the communication encryption key being used to encrypt information to be transferred between a plurality of programs. The number of times the communication encryption key is supplied is counted. If the counted number is equal to or less than a predetermined number, the communication encryption key is supplied to outside. If the counted number exceeds the predetermined number, the supply of the generated communication encryption key to outside is stopped.
摘要翻译：提供了一种IC芯片，电路板，信息处理设备和存储介质，即使当在多个程序之间传送信息时，也可以防止与传送有关的信息的右侧保护算法泄漏。安全板包括具有安全模块的IC芯片。安全模块接收加密密钥请求信号，并且每当接收到加密密钥请求信号时生成通信加密密钥，该通信加密密钥用于加密要在多个程序之间传送的信息。计算提供通信加密密钥的次数。如果计数的数量等于或小于预定数量，则将通信加密密钥提供给外部。如果计数的数量超过预定数量，则停止将生成的通信加密密钥提供给外部。

3. 发明申请

US20060226454A1 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US20060226454A1
公开(公告)日：2006-10-12
申请号：US11401292
申请日：2006-04-11
申请人： Mitsuhiro Togo , Eiji Hasegawa
发明人： Mitsuhiro Togo , Eiji Hasegawa
IPC分类号： H01L29/76 , H01L29/94 , H01L31/00
CPC分类号： H01L29/4916 , H01L21/28035 , H01L21/82345 , H01L21/823456
摘要： A semiconductor device 1 according to the present invention includes a semiconductor substrate 5, a first transistor 10 which is formed on the semiconductor substrate 5 and includes a first gate electrode portion 16 constituted by a first gate insulating film 24 and a first gate electrode 26 having a first gate length L1 which are stacked, and a second transistor 12 which is formed on the semiconductor substrate 5 and includes a second gate electrode portion 20 constituted by a second gate insulating film 32 and a second gate electrode 30 having a second gate length L2 smaller than the first gate length L1, the second gate insulating film 32 and the second gate electrode 30 being stacked, wherein the grain size of poly-silicon grains forming the first gate electrode 26 is greater than the grain size of poly-silicon grains forming the second gate electrode 30.
摘要翻译：根据本发明的半导体器件1包括半导体衬底5，第一晶体管10，其形成在半导体衬底5上，并且包括由第一栅极绝缘膜24和第一栅电极26构成的第一栅电极部分16，堆叠的第一栅极长度L 1和形成在半导体衬底5上并包括由第二栅极绝缘膜32和第二栅极电极30构成的第二栅极电极部分20的第二晶体管12，第二栅极电极30具有第二栅极长度 L 2，第二栅极绝缘膜32和第二栅电极30堆叠，其中形成第一栅电极26的多晶硅颗粒的晶粒尺寸大于聚硅晶粒的晶粒尺寸，形成第二栅电极30的硅晶粒。

4. 发明授权

US06445033B1 Gate-insulating film including oxide film 失效
标题翻译：包含氧化膜的绝缘膜
公开(公告)号：US06445033B1
公开(公告)日：2002-09-03
申请号：US09609290
申请日：2000-06-30
申请人： Eiji Hasegawa
发明人： Eiji Hasegawa
IPC分类号： H01L218228
CPC分类号： H01L21/28185 , H01L21/28194 , H01L29/513 , H01L29/517
摘要： A gate-insulating film of the present invention is a gate-insulating film having a polycrystalline film made of a metal oxide, in which a grain boundary plane extending in parallel with the polycrystalline film is present at the position of a predetermined thickness of the polycrystalline film and grain boundaries extending in the film-thickness direction of polycrystals configuring the polycrystalline film are discontinuous at the grain boundary plane.
摘要翻译：本发明的栅极绝缘膜是具有金属氧化物的多晶膜的栅极绝缘膜，其中与多晶膜平行延伸的晶界面存在于多晶的预定厚度的位置在构成多晶膜的多晶体的膜厚度方向上延伸的膜和晶界在晶界处是不连续的。

5. 发明授权

US5460992A Fabricating non-volatile memory device having a multi-layered gate electrode 失效
标题翻译：制造具有多层栅电极的非易失性存储器件
公开(公告)号：US5460992A
公开(公告)日：1995-10-24
申请号：US438778
申请日：1995-05-11
申请人： Eiji Hasegawa
发明人： Eiji Hasegawa
IPC分类号： H01L21/8247 , H01L21/316 , H01L21/318 , H01L21/336 , H01L27/115 , H01L29/788 , H01L29/792
CPC分类号： H01L29/66825 , Y10S148/114
摘要： A non-volatile memory device with a multi-layered gate electrode structure is fabricated by forming a floating gate electrode and a thermally oxidized silicon film on surfaces inclusive of a surface of the multi-layered gate electrode structure having a control gate electrode, and then forming, by a thermal nitrifying treatment, a thermally nitrified oxidized silicon film at an interface between the thermally oxidized silicon film and the multi-layered gate electrode structure. Diffusion of impurity into a multi-layered gate electrode structure of the memory is prevented and also leakage current due to mismatching at the film interface is reduced.
摘要翻译：通过在具有控制栅电极的多层栅极电极结构的表面上形成浮置栅电极和热氧化硅膜来制造具有多层栅电极结构的非易失性存储器件，然后通过热硝化处理在热氧化硅膜和多层栅电极结构之间的界面处形成热硝化氧化硅膜。可以防止杂质扩散到存储器的多层栅极电极结构中，并且由于膜界面处的失配而导致的漏电流减小。

6. 发明授权

US08667278B2 Information processing apparatus and data transmission method of information processing apparatus 有权
标题翻译：信息处理装置的信息处理装置和数据传输方法
公开(公告)号：US08667278B2
公开(公告)日：2014-03-04
申请号：US12075417
申请日：2008-03-10
申请人： Naoki Nishiguchi , Eiji Hasegawa , Noboru Iwamatsu
发明人： Naoki Nishiguchi , Eiji Hasegawa , Noboru Iwamatsu
IPC分类号： H04L29/06 , H04L9/32
CPC分类号： G06F21/57 , G06F21/575 , G06F2221/2103 , G06F2221/2105 , H04L9/085 , H04L9/0891 , H04L9/0894 , H04L63/0442 , H04L63/061 , H04L63/0869
摘要： An apparatus stores first divided trust information which is one portion resulting from division of trust information generated by a transmission target apparatus that is a transmission target for data, receives a transmission request for the data from the target apparatus and receives second divided trust information which is the other portion resulting from division of the trust information of the target apparatus and verification information generated using information indicating a state of the target apparatus that made the request, recovers the trust information using the first divided trust information stored and the received second divided trust information, verifies trustworthiness of the target apparatus using the recovered trust information and the received verification information, transmits the data indicated by the request to the target apparatus when the verification of trustworthiness is successful.
摘要翻译：装置存储作为由作为数据的发送对象的发送对象装置生成的信任信息分割的一部分的第一分割信任信息，从目标装置接收对该数据的发送请求，并接收第二被分割的信任信息，由目标设备的信任信息分割产生的另一部分和使用指示进行请求的目标设备的状态的信息产生的验证信息，使用存储的第一分割信任信息和接收到的第二分割信任信息来恢复信任信息使用恢复的信任信息和接收到的验证信息来验证目标设备的可靠性，当可信赖性的验证成功时，将由请求指示的数据发送到目标设备。

7. 发明授权

US08440521B2 Method of manufacturing a semiconductor device 有权
标题翻译：制造半导体器件的方法
公开(公告)号：US08440521B2
公开(公告)日：2013-05-14
申请号：US13067788
申请日：2011-06-27
申请人： Naomi Fukumaki , Eiji Hasegawa , Toshihiro Iizuka , Ichiro Yamamoto
发明人： Naomi Fukumaki , Eiji Hasegawa , Toshihiro Iizuka , Ichiro Yamamoto
IPC分类号： H01L21/3105
CPC分类号： H01L21/823857 , H01L21/823842
摘要： A method of manufacturing a semiconductor device having a p-type field effect transistor and an n-type field effect transistor includes the steps of: forming an interface insulating layer and a high-permittivity layer on a substrate in the stated order; forming a pattern of a sacrifice layer on the high-permittivity layer; forming a metal-containing film containing metal elements therein on the high-permittivity layer in a first region where the sacrifice layer is formed and a second region where no sacrifice layer is formed; introducing the metal elements into an interface between the interface insulating layer and the high-permittivity layer in the second region by conducting a heat treatment; and removing the sacrifice layer by wet etching, wherein in the removing step, the sacrifice layer is etched easily more than the high-permittivity layer. With this configuration, the semiconductor device excellent in reliability is obtained.
摘要翻译：制造具有p型场效应晶体管和n型场效应晶体管的半导体器件的方法包括以下步骤：按照所述顺序在衬底上形成界面绝缘层和高电容率层; 在高电介质层上形成牺牲层的图案; 在形成有牺牲层的第一区域和形成牺牲层的第二区域的高介电常数层上形成含有金属元素的含金属膜; 通过进行热处理，将金属元素引入第二区域中的界面绝缘层与高电容率层之间的界面; 并且通过湿法蚀刻去除牺牲层，其中在去除步骤中，牺牲层比高介电常数层容易蚀刻。由此，能够获得可靠性优异的半导体装置。

8. 发明申请

US20130056714A1 ORGANIC EL DISPLAY, METHOD OF PRODUCING ORGANIC EL DISPLAY, AND ELECTRONIC UNIT 审中-公开
标题翻译：有机EL显示器，有机EL显示器的制造方法和电子单元
公开(公告)号：US20130056714A1
公开(公告)日：2013-03-07
申请号：US13594274
申请日：2012-08-24
申请人： Eiji Hasegawa , Atsuya Makita , Jiro Yamada , Seiichi Yokoyama , Hidetoshi Noda , Hiroshi Sagawa
发明人： Eiji Hasegawa , Atsuya Makita , Jiro Yamada , Seiichi Yokoyama , Hidetoshi Noda , Hiroshi Sagawa
IPC分类号： H01L27/32 , H01L51/56
CPC分类号： H01L51/5218 , H01L27/3276 , H01L51/5234 , H01L2251/5315
摘要： An organic EL display includes: a plurality of first electrodes provided in a display region on a drive substrate, the plurality of first electrodes each including a laminated film having two or more layers; an organic layer provided on the plurality of first electrodes and including a light emitting layer; an electrode pad provided in a peripheral region around the display region; and a second electrode provided on the organic layer as well as the electrode pad, wherein the laminated film includes a first conductive film functioning as a reflective film, and a second conductive film provided below the first conductive film, and having a reflectance lower than that of the first conductive film, and the electrode pad corresponds to a part of the laminated film, and includes a conductive film made of a material same as that of the second conductive film.
摘要翻译：有机EL显示器包括：设置在驱动基板上的显示区域中的多个第一电极，所述多个第一电极各自包括具有两层或更多层的层叠膜; 设置在所述多个第一电极上并包括发光层的有机层; 设置在显示区域周围的周边区域的电极焊盘; 以及设置在有机层上的第二电极以及电极焊盘，其中，所述层压膜具有作为反射膜的第一导电膜和设置在所述第一导电膜的下方的反射率低于所述第一导电膜的反射率的第二导电膜。并且所述电极焊盘对应于所述层叠膜的一部分，并且包括由与所述第二导电膜相同的材料制成的导电膜。

9. 发明授权

US07355256B2 MOS Devices with different gate lengths and different gate polysilicon grain sizes 有权
标题翻译：具有不同栅极长度和不同栅极多晶硅晶粒尺寸的MOS器件
公开(公告)号：US07355256B2
公开(公告)日：2008-04-08
申请号：US11401292
申请日：2006-04-11
申请人： Mitsuhiro Togo , Eiji Hasegawa
发明人： Mitsuhiro Togo , Eiji Hasegawa
IPC分类号： H01L29/78
CPC分类号： H01L29/4916 , H01L21/28035 , H01L21/82345 , H01L21/823456
摘要： A semiconductor device 1 according to the present invention includes a semiconductor substrate 5, a first transistor 10 which is formed on the semiconductor substrate 5 and includes a first gate electrode portion 16 constituted by a first gate insulating film 24 and a first gate electrode 26 having a first gate length L1 which are stacked, and a second transistor 12 which is formed on the semiconductor substrate 5 and includes a second gate electrode portion 20 constituted by a second gate insulating film 32 and a second gate electrode 30 having a second gate length L2 smaller than the first gate length L1, the second gate insulating film 32 and the second gate electrode 30 being stacked, wherein the grain size of poly-silicon grains forming the first gate electrode 26 is greater than the grain size of poly-silicon grains forming the second gate electrode 30.
摘要翻译：根据本发明的半导体器件1包括半导体衬底5，第一晶体管10，其形成在半导体衬底5上，并且包括由第一栅极绝缘膜24和第一栅电极26构成的第一栅电极部分16，堆叠的第一栅极长度L 1和形成在半导体衬底5上并包括由第二栅极绝缘膜32和第二栅极电极30构成的第二栅极电极部分20的第二晶体管12，第二栅极电极30具有第二栅极长度 L 2，第二栅极绝缘膜32和第二栅电极30堆叠，其中形成第一栅电极26的多晶硅颗粒的晶粒尺寸大于聚硅晶粒的晶粒尺寸，形成第二栅电极30的硅晶粒。

10. 发明授权

US07192887B2 Semiconductor device with nitrogen in oxide film on semiconductor substrate and method of manufacturing the same 失效
标题翻译：在半导体衬底上的氧化膜中具有氮的半导体器件及其制造方法
公开(公告)号：US07192887B2
公开(公告)日：2007-03-20
申请号：US10768611
申请日：2004-01-29
申请人： Eiji Hasegawa
发明人： Eiji Hasegawa
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/28185 , H01L21/0214 , H01L21/02238 , H01L21/02255 , H01L21/02323 , H01L21/02332 , H01L21/02337 , H01L21/0234 , H01L21/28202 , H01L21/3144 , H01L21/31662 , H01L29/513 , H01L29/518
摘要： A method of manufacturing a MOS transistor is provided that achieves high-speed devices by reducing nitrogen diffusion to a silicon substrate interface due to redistribution of nitrogen and further suppressing its diffusion to a polysilicon interface, which prevents realization of faster transistors. An oxide film is exposed to a nitriding atmosphere to introduce nitrogen into the oxide film, and a thermal treatment process is performed in an oxidizing atmosphere. The thermal treatment process temperature in the oxidizing atmosphere is made equal to or higher than the maximum temperature in all the thermal treatment processes that are performed later than that thermal treatment process step.
摘要翻译：提供一种制造MOS晶体管的方法，其通过由于氮的再分配而减少氮扩散到硅衬底界面而实现高速器件，并进一步抑制其扩散到多晶硅界面，这阻止了实现更快的晶体管。将氧化膜暴露于氮化气氛以将氮气引入到氧化物膜中，并且在氧化气氛中进行热处理工艺。所有热处理工序的氧化气氛中的热处理工艺温度等于或高于在该热处理工序中进行的所有热处理工序中的最高温度。

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