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1. 发明授权

US10483460B2 Method of manufacturing a magnetoresistive stack/ structure using plurality of encapsulation layers 有权
公开(公告)号：US10483460B2
公开(公告)日：2019-11-19
申请号：US15337123
申请日：2016-10-28
申请人： Everspin Technologies, Inc.
发明人： Kerry Joseph Nagel , Wenchin Lin , Sarin A. Deshpande , Jijun Sun , Sanjeev Aggarwal , Chaitanya Mudivarthi
IPC分类号： H01L43/12 , G11C11/16 , H01L43/08
摘要： A method of manufacturing a magnetoresistive stack/structure comprising etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer; depositing a first encapsulation layer on the sidewalls of the second magnetic region and over the dielectric layer; etching the first encapsulation layer which is disposed over the exposed surface of the dielectric layer. The method further includes (a) depositing a second encapsulation layer: (i) on the first encapsulation layer disposed on the sidewalls of the second magnetic region and (ii) over the exposed surface of the dielectric layer and (b) depositing a third encapsulation layer: (i) on the second encapsulation layer which is on the first encapsulation layer and the exposed surface of the dielectric layer. The method also includes etching the remaining layers of the stack/structure (via one or more etch processes).

2. 发明申请

US20170125663A1 Method of Manufacturing a Magnetoresistive Stack/ Structure using Plurality of Encapsulation Layers 审中-公开
公开(公告)号：US20170125663A1
公开(公告)日：2017-05-04
申请号：US15337123
申请日：2016-10-28
申请人： Everspin Technologies, Inc.
发明人： Kerry Joseph Nagel , Wenchin Lin , Sarin A. Deshpande , Jijun Sun , Sanjeev Aggarwal , Chaitanya Mudivarthi
IPC分类号： H01L43/02 , H01L27/22 , H01L43/12 , H01L43/08 , H01L43/10
CPC分类号： H01L43/12 , G11C11/161 , G11C2211/5615 , H01L43/08
摘要： A method of manufacturing a magnetoresistive stack/structure comprising etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer; depositing a first encapsulation layer on the sidewalls of the second magnetic region and over the dielectric layer; etching the first encapsulation layer which is disposed over the exposed surface of the dielectric layer. The method further includes (a) depositing a second encapsulation layer: (i) on the first encapsulation layer disposed on the sidewalls of the second magnetic region and (ii) over the exposed surface of the dielectric layer and (b) depositing a third encapsulation layer: (i) on the second encapsulation layer which is on the first encapsulation layer and the exposed surface of the dielectric layer. The method also includes etching the remaining layers of the stack/structure (via one or more etch processes).

3. 发明申请

US20160027998A1 VIA FORMED UNDERLYING A MANGETORESISTIVE DEVICE AND METHOD OF MANUFACTURE 审中-公开
标题翻译：通过形成一个全方位的设备和制造方法
公开(公告)号：US20160027998A1
公开(公告)日：2016-01-28
申请号：US14340209
申请日：2014-07-24
申请人： Everspin Technologies, Inc.
发明人： Chaitanya Mudivarthi , Sanjeev Aggarwal
IPC分类号： H01L43/12 , H01L43/08 , H01L43/02
CPC分类号： H01L43/12 , H01L43/02 , H01L43/08
摘要： A via underlying a magnetoresistive device is formed to include a lower portion that includes a first material and an upper portion that includes a second material, where the second material is part of the material making up the bottom electrode of the magnetoresistive device. The via is formed by partially filling a via hole with the first material and then filling the remaining portion of the via hole when a layer of the second material is deposited to form the basis for the bottom electrode. The layer of second material is polished to provide a planar surface on which to form the magnetoresistive stack and top electrode. After forming the magnetoresistive stack and top electrode, the layer of second material is etched to form the bottom electrode. Such a via allows the magnetoresistive stack to be formed directly over the via, thereby reducing the area required for each device and increasing density in applications such as MRAMs.
摘要翻译：形成在磁阻器件下方的通孔形成为包括下部，其包括第一材料和包括第二材料的上部，其中第二材料是组成磁阻器件的底部电极的材料的一部分。所述通孔是通过用第一材料部分地填充通孔而形成的，然后当沉积第二材料的一层以形成底部电极的基底时，填充通孔的剩余部分。第二材料层被抛光以提供平面，在其上形成磁阻堆叠和顶电极。在形成磁阻堆叠和顶电极之后，蚀刻第二材料层以形成底电极。这样的通孔允许直接在通孔上形成磁阻堆叠，从而减少每个器件所需的面积，并增加诸如MRAM之类的应用中的密度。

4. 发明申请

US20160225981A1 Magnetoresistive Stack/Structure and Method of Manufacturing Same 有权
标题翻译：磁阻堆栈/结构及制造方法相同
公开(公告)号：US20160225981A1
公开(公告)日：2016-08-04
申请号：US15013950
申请日：2016-02-02
申请人： Everspin Technologies, Inc.
发明人： Sarin A. Deshpande , Kerry Joseph Nagel , Chaitanya Mudivarthi , Sanjeev Aggarwal
IPC分类号： H01L43/12 , H01L43/08 , H01L43/02
CPC分类号： H01L43/12 , H01L43/08
摘要： A method of manufacturing a magnetoresistive stack/structure comprising etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer; depositing a first encapsulation layer on the sidewalls of the second magnetic region and over the dielectric layer; etching (i) the first encapsulation layer which is disposed over the exposed surface of the dielectric layer and (ii) re-deposited material disposed on the dielectric layer, wherein, thereafter a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region. The method further includes depositing a second encapsulation layer: (i) on the first encapsulation layer disposed on the sidewalls of the second magnetic region and (ii) over the exposed surface of the dielectric layer; and etching the remaining layers of the stack/structure (via one or more etch processes).
摘要翻译：一种制造磁阻堆叠/结构的方法，包括通过第二磁性区域蚀刻以（i）提供第二磁性区域的侧壁和（ii）暴露电介质层的表面; 在所述第二磁性区域的侧壁上并在所述电介质层上方沉积第一封装层; 蚀刻（i）设置在电介质层的暴露表面上的第一封装层和（ii）设置在电介质层上的再沉积材料，其后，第一封装层的一部分保留在第二封装层的侧壁上磁区。该方法还包括沉积第二封装层：（i）在设置在第二磁区的侧壁上的第一封装层上，和（ii）在介电层的暴露表面上; 并蚀刻堆叠/结构的剩余层（经由一个或多个蚀刻工艺）。

5. 发明授权

US09269894B2 Isolation of magnetic layers during etch in a magnetoresistive device 有权
标题翻译：在磁阻器件中蚀刻期间磁层的隔离
公开(公告)号：US09269894B2
公开(公告)日：2016-02-23
申请号：US14296153
申请日：2014-06-04
申请人： Everspin Technologies, Inc.
发明人： Chaitanya Mudivarthi , Sarin A. Deshpande , Sanjeev Aggarwal
IPC分类号： H01L43/12 , H01L43/08 , H01L27/22
CPC分类号： H01L43/12 , G11B5/3163 , G11C11/161 , H01L27/222 , H01L27/228 , H01L43/02 , H01L43/08 , Y10T29/49021
摘要： Isolation of magnetic layers in the magnetoresistive stack is achieved by passivation of sidewalls of the magnetic layers or deposition of a thin film of non-magnetic dielectric material on the sidewalls prior to subsequent etching steps. Etching the magnetic layers using a non-reactive gas further prevents degradation of the sidewalls.
摘要翻译：通过在后续蚀刻步骤之前钝化磁性层的侧壁或在侧壁上沉积非磁性介电材料的薄膜来实现磁阻堆叠中的磁性层的隔离。使用非反应性气体蚀刻磁性层进一步防止侧壁的劣化。

6. 发明申请

US20150357560A1 REDUCING SWITCHING VARIATION IN MAGNETORESISTIVE DEVICES 有权
标题翻译：减少电磁设备中的切换变化
公开(公告)号：US20150357560A1
公开(公告)日：2015-12-10
申请号：US14298085
申请日：2014-06-06
申请人： Everspin Technologies, Inc.
发明人： Chaitanya Mudivarthi , Jason Allen Janesky , Jijun Sun , Frederick Bennett Mancoff , Sanjeev Aggarwal
IPC分类号： H01L43/12
CPC分类号： H01J43/12 , H01L43/12
摘要： The magnetic characteristics of a magnetoresistive device are improved by rendering magnetic debris non-magnetic during processing operations. Further improvement is realized by annealing the partially- or fully-formed device in the presence of a magnetic field in order to eliminate or stabilize magnetic micro-pinning sites or other magnetic abnormalities within the magnetoresistive stack for the device. Such improvement in magnetic characteristics decreases deviation in switching characteristics in arrays of such magnetoresistive devices such as those present in MRAMs.
摘要翻译：通过在处理操作期间使磁性碎屑非磁性来改善磁阻器件的磁特性。通过在存在磁场的情况下退火部分或完全形成的器件来实现进一步的改进，以消除或稳定该器件的磁阻堆叠内的磁微钉扎位置或其他磁异常。这种磁特性的改善降低了诸如存在于MRAM中的磁阻器件阵列中的开关特性的偏差。

7. 发明授权

US10079339B2 Magnetoresistive stack/structure and method of manufacturing same 有权
公开(公告)号：US10079339B2
公开(公告)日：2018-09-18
申请号：US15727905
申请日：2017-10-09
申请人： Everspin Technologies, Inc.
发明人： Sarin A. Deshpande , Kerry Joseph Nagel , Chaitanya Mudivarthi , Sanjeev Aggarwal
IPC分类号： H01L21/00 , H01L43/12 , H01L43/08
CPC分类号： H01L43/12 , H01L43/08
摘要： A method of manufacturing a magnetoresistive stack/structure comprising (a) etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer, (b) depositing a first encapsulation layer on the sidewalls of the second magnetic region and over a surface of the dielectric layer, (c) thereafter: (i) etching the first encapsulation layer which is disposed over the dielectric layer using a first etch process, and (ii) etching re-deposited material using a second etch process, wherein, after such etching, a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region, (d) etching (i) through the dielectric layer to form a tunnel barrier and provide sidewalls thereof and (ii) etching the first magnetic region to provide sidewalls thereof, and (e) depositing a second encapsulation layer on the sidewalls of the tunnel barrier and first magnetic region.

8. 发明授权

US09793470B2 Magnetoresistive stack/structure and method of manufacturing same 有权
公开(公告)号：US09793470B2
公开(公告)日：2017-10-17
申请号：US15013950
申请日：2016-02-02
申请人： Everspin Technologies, Inc.
发明人： Sarin A. Deshpande , Kerry Joseph Nagel , Chaitanya Mudivarthi , Sanjeev Aggarwal
IPC分类号： H01L21/00 , H01L43/12 , H01L43/08
CPC分类号： H01L43/12 , H01L43/08
摘要： A method of manufacturing a magnetoresistive stack/structure comprising etching through a second magnetic region to (i) provide sidewalls of the second magnetic region and (ii) expose a surface of a dielectric layer; depositing a first encapsulation layer on the sidewalls of the second magnetic region and over the dielectric layer; etching (i) the first encapsulation layer which is disposed over the exposed surface of the dielectric layer and (ii) re-deposited material disposed on the dielectric layer, wherein, thereafter a portion of the first encapsulation layer remains on the sidewalls of the second magnetic region. The method further includes depositing a second encapsulation layer: (i) on the first encapsulation layer disposed on the sidewalls of the second magnetic region and (ii) over the exposed surface of the dielectric layer; and etching the remaining layers of the stack/structure (via one or more etch processes).

9. 发明授权

US09595665B2 Non-reactive photoresist removal and spacer layer optimization in a magnetoresistive device 有权
标题翻译：磁阻器件中的非反应性光致抗蚀剂去除和间隔层优化
公开(公告)号：US09595665B2
公开(公告)日：2017-03-14
申请号：US15147682
申请日：2016-05-05
申请人： Everspin Technologies, Inc.
发明人： Sarin A. Deshpande , Sanjeev Aggarwal , Kerry Joseph Nagel , Chaitanya Mudivarthi , Nicholas Rizzo , Jason Allen Janesky
IPC分类号： H01L43/12 , H01L43/08 , H01L27/22
CPC分类号： H01L43/12 , H01L27/222 , H01L43/08
摘要： In forming a top electrode for a magnetoresistive device, photoresist used in patterning the electrode is stripped using a non-reactive stripping process. Such a non-reactive stripping process uses water vapor or some other non-oxidizing gas that also passivates exposed portions the magnetoresistive device. In such magnetoresistive devices, a non-reactive spacer layer is included that helps prevent diffusion between layers in the magnetoresistive device, where the non-reactive nature of the spacer layer prevents sidewall roughness that can interfere with accurate formation of the lower portions of the magnetoresistive device.
摘要翻译：在形成用于磁阻器件的顶部电极时，使用非反应性剥离工艺剥离用于图案化电极的光致抗蚀剂。这种非反应性汽提方法使用水蒸汽或一些其它非氧化气体，其也钝化了磁阻装置的暴露部分。在这种磁阻器件中，包括非反应性间隔层，其有助于防止磁阻器件中的层之间的扩散，其中间隔层的非反应特性防止可能干扰磁阻的下部的精确形成的侧壁粗糙度设备。

10. 发明授权

US09281168B2 Reducing switching variation in magnetoresistive devices 有权
标题翻译：降低磁阻器件的开关变化
公开(公告)号：US09281168B2
公开(公告)日：2016-03-08
申请号：US14298085
申请日：2014-06-06
申请人： Everspin Technologies, Inc.
发明人： Chaitanya Mudivarthi , Jason Allen Janesky , Jijun Sun , Frederick Bennett Mancoff , Sanjeev Aggarwal
IPC分类号： H01L27/11 , H01L27/22 , H01J43/12
CPC分类号： H01J43/12 , H01L43/12
摘要： The magnetic characteristics of a magnetoresistive device are improved by rendering magnetic debris non-magnetic during processing operations. Further improvement is realized by annealing the partially- or fully-formed device in the presence of a magnetic field in order to eliminate or stabilize magnetic micro-pinning sites or other magnetic abnormalities within the magnetoresistive stack for the device. Such improvement in magnetic characteristics decreases deviation in switching characteristics in arrays of such magnetoresistive devices such as those present in MRAMs.
摘要翻译：通过在处理操作期间使磁性碎屑非磁性来改善磁阻器件的磁特性。通过在存在磁场的情况下退火部分或完全形成的器件来实现进一步的改进，以消除或稳定该器件的磁阻堆叠内的磁微钉扎位置或其他磁异常。这种磁特性的改善降低了诸如存在于MRAM中的磁阻器件阵列中的开关特性的偏差。

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