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1. 发明授权

US11562970B2 Semiconductor device and manufacturing method thereof 有权
公开(公告)号：US11562970B2
公开(公告)日：2023-01-24
申请号：US17212084
申请日：2021-03-25
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tadahiko Sato
IPC分类号： H01L23/00 , H01L23/055 , H01L25/065 , H01L25/18 , H05K1/18
摘要： A semiconductor device, including a semiconductor module, a positioning member and a printed board. The semiconductor module includes a case that stores a semiconductor chip, a plurality of external terminals electrically connected to the semiconductor chip and extending upward from a front surface of the case, and a reference pin extending upward from the front surface of the case. The positioning member has a reference hole and a plurality of supporting holes penetrating therethrough. The printed board including a plurality of terminal holes that respectively correspond to the plurality of external terminals. The printed board is disposed on the front surface of the case via the positioning member. The plurality of external terminals of the semiconductor module are respectively attached to the plurality of terminal holes.

2. 发明授权

US10063224B2 Driver circuit and semiconductor module having same 有权
公开(公告)号：US10063224B2
公开(公告)日：2018-08-28
申请号：US15803701
申请日：2017-11-03
申请人： Fuji Electric Co., Ltd.
发明人： Tadahiko Sato
IPC分类号： H03K17/081 , H02M1/32 , H02M3/158 , H03K17/687 , H03K17/0812 , H02M1/00
CPC分类号： H03K17/08104 , H02M1/32 , H02M3/158 , H02M2001/0038 , H03K17/08122 , H03K17/6871 , H03K2217/0063 , H03K2217/0072
摘要： An output of a gate driver that drives a main switch is connected to the gate of the main switch, and a low-voltage side power supply terminal of the gate driver is connected to a source of the main switch via a current limiting resistor. Moreover, a suppression capacitor for suppressing rapid changes in current, having a prescribed capacitance, is connected between the drain of the main switch of a main circuit and the low-voltage side power supply terminal of the gate driver. This makes it possible to suppress the rapid change in current that occurs when the main switch switches OFF as well as to prevent extremely large currents from occurring in a low-voltage side power supply line of the driver circuit.

3. 发明授权

US09276482B2 Forward type DC-DC converter 有权
标题翻译：正向型DC-DC转换器
公开(公告)号：US09276482B2
公开(公告)日：2016-03-01
申请号：US13649101
申请日：2012-10-10
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tadahiko Sato
IPC分类号： H02M3/335
CPC分类号： H02M3/33553 , H02M3/33592 , Y02B70/1475
摘要： With the use of a voltage across a secondary winding of a transformer, a DC output voltage and a conduction time width of a current in the DC reactor on the secondary side circuit in an immediately preceding period, the turning-on time width and the turning-off time width of a synchronous rectification MOSFET in the secondary side circuit of the transformer are obtained by calculations, without receiving any signals from a primary side circuit, to thereby carry out control of a synchronous rectification circuit in a forward DC-DC converter with the time in which a current flows in a diode reduced to the minimum.
摘要翻译：通过使用变压器的次级绕组上的电压，直流输出电压和次级侧电路中的直流电抗器中的电流的导通时间宽度，在接通时间宽度和转弯通过计算得到变压器次级侧电路中的同步整流MOSFET的截止时间宽度，而不从原边电路接收到任何信号，从而在正向DC-DC转换器中执行同步整流电路的控制，电流在二极管中流动的时间减少到最小。

4. 发明授权

US11515868B2 Electronic circuit and semiconductor module 有权
公开(公告)号：US11515868B2
公开(公告)日：2022-11-29
申请号：US17329615
申请日：2021-05-25
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tadahiko Sato
IPC分类号： H03K17/08 , H03K17/0812 , H02M1/08 , H02M1/00
摘要： An electronic circuit, including a first switching device that contains a first semiconductor material with a first band gap, and a second switching device that is coupled in parallel to the first switching device, and contains a second semiconductor material with a second band gap smaller than the first band gap. Each of the first and second switching devices has a control electrode, and the control electrode of the first switching device is coupled to the control electrode of the second switching device.

5. 发明授权

US11410907B2 Semiconductor module 有权
公开(公告)号：US11410907B2
公开(公告)日：2022-08-09
申请号：US17216810
申请日：2021-03-30
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tadahiko Sato
IPC分类号： H01L23/00 , H01L23/373 , H01L25/07 , H01L23/31
摘要： A semiconductor module includes a multilayer substrate having an insulating plate on which first to third conductive layers respectively connected to positive, negative and output electrode terminals are arranged in a first direction, a plurality of first semiconductor elements each having top and bottom electrodes on the first conductive layer and arranged in a second direction orthogonal to the first direction, a plurality of second semiconductor elements each having top and bottom electrodes on the second conductive layer and arranged in the second direction, first and second main wiring members each connecting the top electrode of each first and second semiconductor element to the second and third conductive layers. The multilayer substrate includes a first control wiring layer extending in the second direction and passing under the first main wiring member, and a second control wiring layer extending in the second direction and passing under the second main wiring member.

6. 发明授权

US09379096B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09379096B2
公开(公告)日：2016-06-28
申请号：US14483742
申请日：2014-09-11
申请人： FUJI ELECTRIC CO., LTD.
发明人： Toshio Denta , Tomonori Seki , Tadanori Yamada , Tadahiko Sato
IPC分类号： H01L25/18 , H01L23/498 , H01L23/373 , H01L23/495 , H01L23/00 , H01L25/16 , H01L23/50 , H01L23/24
CPC分类号： H01L25/18 , H01L23/043 , H01L23/24 , H01L23/3735 , H01L23/495 , H01L23/49517 , H01L23/49575 , H01L23/49811 , H01L23/49833 , H01L23/49861 , H01L23/50 , H01L24/48 , H01L24/49 , H01L25/162 , H01L2224/48091 , H01L2224/48101 , H01L2224/48105 , H01L2224/48137 , H01L2224/48139 , H01L2224/48247 , H01L2224/48472 , H01L2224/49107 , H01L2924/00014 , H01L2924/1203 , H01L2924/1305 , H01L2924/13055 , H01L2924/00 , H01L2224/45099 , H01L2224/05599
摘要： A semiconductor device includes a plurality of semiconductor elements; first semiconductor chips including first semiconductor elements, the first semiconductor elements being defined as semiconductor elements in the plurality of semiconductor elements and having a current flowing greater than that of the other semiconductor elements; second semiconductor chips having second semiconductor elements, the second semiconductor elements being defined as semiconductor elements in the plurality of semiconductor elements for controlling the first semiconductor elements; an insulating substrate having a first wiring pattern bonded with the first semiconductor chips; and an insulating member having a second wiring pattern mounted with the second semiconductor chips.
摘要翻译：半导体器件包括多个半导体元件; 第一半导体芯片包括第一半导体元件，第一半导体元件被定义为多个半导体元件中的半导体元件，并且具有大于其它半导体元件的电流; 具有第二半导体元件的第二半导体芯片，所述第二半导体元件被定义为用于控制所述第一半导体元件的所述多个半导体元件中的半导体元件; 具有与所述第一半导体芯片接合的第一布线图案的绝缘基板; 以及具有安装有第二半导体芯片的第二布线图案的绝缘构件。

7. 发明授权

US09030848B2 DC to DC converter 有权
标题翻译：直流到直流转换器
公开(公告)号：US09030848B2
公开(公告)日：2015-05-12
申请号：US13648328
申请日：2012-10-10
申请人： Fuji Electric Co., Ltd.
发明人： Tadahiko Sato
IPC分类号： H02M3/335
CPC分类号： H02M3/33592 , H02M2001/0006 , H02M2001/342 , Y02B70/1475 , Y02B70/1491
摘要： A DC to DC converter can include a reverse-blocking semiconductor switch that makes a synchronously rectifying MOSFET become parallel-connected with a capacitor that is connected to a power supply of a controller IC for a conventionally used synchronously rectifying circuit. The reverse-blocking semiconductor switch can be driven either by signals for adjusting a voltage of the capacitor within a permitted range of voltage of the power supply of the controller circuit, or by signals that are determined by a signal obtained from voltage across the MOSFET and the signals for adjusting a voltage of the capacitor within a permitted range of voltage of the power supply of the controller circuit.
摘要翻译： DC-DC转换器可以包括反向阻断半导体开关，其使得同步整流MOSFET与连接到用于常规使用的同步整流电路的控制器IC的电源的电容器并联连接。反向阻挡半导体开关可以通过用于在控制器电路的电源的允许的电压范围内调节电容器的电压的信号或由通过MOSFET的电压获得的信号确定的信号来驱动，用于在控制器电路的电源的允许的电压范围内调整电容器的电压的信号。

8. 发明授权

US11513165B2 Power semiconductor module and leakage current test method for the same 有权
公开(公告)号：US11513165B2
公开(公告)日：2022-11-29
申请号：US16889144
申请日：2020-06-01
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tadahiko Sato
IPC分类号： G01R31/40 , H02M3/158 , G01R31/52 , H02M1/08 , H02M1/00
摘要： A power semiconductor module including at least first and second power semiconductor elements, includes a first terminal, a first gate terminal, a second terminal, a second gate terminal, a third terminal and a common terminal. The first terminal connected to a first electrode of the first power semiconductor element. The first gate terminal connected to a gate of the first power semiconductor element. The second terminal connected to a first electrode of the second power semiconductor element. The second gate terminal connected to a gate of the second power semiconductor element. The third terminal connected to a second electrode of the first power semiconductor element and a second electrode of the second power semiconductor element. The common terminal that is connected to the first gate terminal through a first resistor and is connected to the second gate terminal through a second resistor.

9. 发明授权

US10288673B2 Semiconductor device and method of measuring the same 有权
公开(公告)号：US10288673B2
公开(公告)日：2019-05-14
申请号：US15225789
申请日：2016-08-01
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tadahiko Sato
IPC分类号： G01R31/26 , H01L23/492 , H01L23/498
摘要： A semiconductor device includes first and second contact parts that are disposed close to each other with an interval therebetween and form a screw hole (connection area) to which an external connection terminal is connected. The first contact part extends from a side of a case via a first linkage part that extends from the side, and the second contact part extends from the side via a second linkage part that extends from the side. The first and second linkage parts are disposed away from each other by at least a certain interval. In this way, the semiconductor device is allowed to have first and second semiconductor chips connected in parallel with each other and function as a semiconductor device. In addition, electrical characteristics of the first and second semiconductor chips of the semiconductor device are individually measured.

10. 发明授权

US09064818B2 Semiconductor device 有权
标题翻译：半导体器件
公开(公告)号：US09064818B2
公开(公告)日：2015-06-23
申请号：US14180874
申请日：2014-02-14
申请人： FUJI ELECTRIC CO., LTD.
发明人： Toshio Denta , Tomonori Seki , Tadanori Yamada , Tadahiko Sato
IPC分类号： H01L23/495 , H01L23/31 , H01L23/057 , H01L23/13 , H01L23/24 , H01L23/373 , H01L23/00
CPC分类号： H01L23/3114 , H01L23/057 , H01L23/13 , H01L23/24 , H01L23/3735 , H01L23/49548 , H01L24/32 , H01L24/48 , H01L24/73 , H01L24/85 , H01L2224/32225 , H01L2224/32245 , H01L2224/48247 , H01L2224/73265 , H01L2224/85205 , H01L2924/00014 , H01L2924/1203 , H01L2924/1305 , H01L2924/13055 , H01L2924/181 , H01L2924/00012 , H01L2924/00 , H01L2224/45099 , H01L2224/45015 , H01L2924/207
摘要： A semiconductor device includes an insulating circuit substrate mounted with at least one semiconductor element; a resin case having a bottom surface portion attached with the insulating circuit substrate and a side surface portion enclosing a periphery of the bottom surface portion; a lead molded integrally with the resin case and provided on a periphery of the insulating circuit substrate to be positioned on a surface of the bottom surface portion inside the resin case, the lead partially extending from inside the resin case to outside the resin case; and a sealing resin filled inside the resin case. A depressed portion is formed on two sides of the lead along a peripheral edge of the bottom surface portion inside the resin case.
摘要翻译：半导体器件包括安装有至少一个半导体元件的绝缘电路衬底; 具有安装有所述绝缘电路基板的底面部分和包围所述底面部分的周边的侧面部分的树脂壳体; 与树脂壳一体成型的铅，设置在绝缘电路基板的周围，位于树脂外壳的内表面部分的表面上，引线部分地从树脂外壳内延伸到树脂外壳的外部; 以及填充在树脂壳体内的密封树脂。沿着树脂壳体内的底面部的周缘形成在引线的两侧的凹部。

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