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1. 发明授权

US10103220B2 Method of manufacturing semiconductor device 有权
公开(公告)号：US10103220B2
公开(公告)日：2018-10-16
申请号：US15897293
申请日：2018-02-15
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tomonori Katano , Fumikazu Imai
IPC分类号： H01L21/00 , H01L29/06 , H01L29/78 , H01L29/861 , H01L21/04 , H01L21/265 , H01L21/324 , H01L21/67 , H01L29/16 , H01L29/167 , H01L29/20 , H01L29/36 , H01L21/02 , H01L29/66 , H01L29/739 , H01L29/872
摘要： An impurity of a second conductivity type is selectively doped in a surface of a semiconductor substrate of a first conductivity type to form doped regions. A portion of a surface of the doped regions is covered by a heat insulating film. At least a remaining portion of the surface of the doped regions is covered by an absorbing film and the doped regions are heated through the absorbing film, enabling an impurity region of the second conductivity type to be formed having two or more of the doped regions that have a same impurity concentration and differing carrier concentrations.

2. 发明申请

US20180175141A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20180175141A1
公开(公告)日：2018-06-21
申请号：US15897293
申请日：2018-02-15
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tomonori Katano , Fumikazu Imai
IPC分类号： H01L29/06 , H01L29/78 , H01L29/861 , H01L21/04 , H01L21/265 , H01L21/324 , H01L21/67 , H01L29/16 , H01L29/167 , H01L29/20 , H01L29/36
CPC分类号： H01L29/0615 , H01L21/02164 , H01L21/0217 , H01L21/02675 , H01L21/0415 , H01L21/046 , H01L21/26513 , H01L21/26546 , H01L21/268 , H01L21/2686 , H01L21/324 , H01L21/67115 , H01L29/0619 , H01L29/0688 , H01L29/16 , H01L29/1602 , H01L29/1608 , H01L29/167 , H01L29/2003 , H01L29/36 , H01L29/6603 , H01L29/66045 , H01L29/6606 , H01L29/66068 , H01L29/66143 , H01L29/66212 , H01L29/66325 , H01L29/66333 , H01L29/66477 , H01L29/66522 , H01L29/66712 , H01L29/7393 , H01L29/7801 , H01L29/7811 , H01L29/861 , H01L29/872
摘要： An impurity of a second conductivity type is selectively doped in a surface of a semiconductor substrate of a first conductivity type to form doped regions. A portion of a surface of the doped regions is covered by a heat insulating film. At least a remaining portion of the surface of the doped regions is covered by an absorbing film and the doped regions are heated through the absorbing film, enabling an impurity region of the second conductivity type to be formed having two or more of the doped regions that have a same impurity concentration and differing carrier concentrations.

3. 发明授权

US09076479B2 Magnetic recording medium 有权
标题翻译：磁记录介质
公开(公告)号：US09076479B2
公开(公告)日：2015-07-07
申请号：US13965140
申请日：2013-08-12
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tomonori Katano , Akiyasu Kumagai , Katsumi Taniguchi , Hiromi Ono , Narumi Sato , Shinji Uchida
IPC分类号： G11B5/66 , G11B5/725 , G11B5/72 , G11B5/84
CPC分类号： G11B5/725 , G11B5/72 , G11B5/82 , G11B5/8408
摘要： A magnetic recording medium includes a substrate having sequentially formed thereon (a) a magnetic layer; (b) a protective layer having a thickness ranging from 1.0 nm to 2.5 nm and being composed of an amorphous metal layer having a thickness of at least 0.3 nm, the amorphous metal layer being composed of a metal selected from the group consisting of Si, Al, Ge, Ti, Zr, Hf, V, Nb, Ta, Cr, Mo and W that is in an amorphous state; (c) a carbon layer formed on the amorphous metal layer and having a thickness of at least 0.3 nm, the carbon layer including amorphous carbon; and (d) a lubricating layer, wherein the carbon layer includes nitrogen atoms in a surface thereof in which a ratio of number of nitrogen atoms to total number of carbon atoms, nitrogen atoms, and oxygen atoms is 14 atomic % or less.
摘要翻译：磁记录介质包括其上顺序形成的基板（a）磁性层; （b）厚度为1.0nm〜2.5nm的保护层，由厚度为0.3nm以下的非晶质金属层构成，所述无定形金属层由选自Si， Al，Ge，Ti，Zr，Hf，V，Nb，Ta，Cr，Mo和W; （c）形成在所述非晶态金属层上并具有至少0.3nm的厚度的碳层，所述碳层包括无定形碳; 和（d）润滑层，其中，碳层在其表面含有氮原子数与碳原子数，氮原子数和氧原子的比率为14原子％以下的氮原子。

4. 发明授权

US09929232B2 Semiconductor device comprises two or more regions that have a same impurity concentration and differing carrier concentrations 有权
公开(公告)号：US09929232B2
公开(公告)日：2018-03-27
申请号：US15414700
申请日：2017-01-25
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tomonori Katano , Fumikazu Imai
IPC分类号： H01L29/00 , H01L29/06 , H01L29/16 , H01L29/20 , H01L21/265 , H01L21/04 , H01L21/324 , H01L21/67 , H01L29/167 , H01L29/861 , H01L29/36 , H01L29/872 , H01L29/78 , H01L29/739 , H01L29/66
CPC分类号： H01L29/0615 , H01L21/02164 , H01L21/0217 , H01L21/02675 , H01L21/0415 , H01L21/046 , H01L21/26513 , H01L21/26546 , H01L21/268 , H01L21/2686 , H01L21/324 , H01L21/67115 , H01L29/0619 , H01L29/0688 , H01L29/16 , H01L29/1602 , H01L29/1608 , H01L29/167 , H01L29/2003 , H01L29/36 , H01L29/6603 , H01L29/66045 , H01L29/6606 , H01L29/66068 , H01L29/66143 , H01L29/66212 , H01L29/66325 , H01L29/66333 , H01L29/66477 , H01L29/66522 , H01L29/66712 , H01L29/7393 , H01L29/7801 , H01L29/7811 , H01L29/861 , H01L29/872
摘要： An impurity of a second conductivity type is selectively doped in a surface of a semiconductor substrate of a first conductivity type to form doped regions. A portion of a surface of the doped regions is covered by a heat insulating film. At least a remaining portion of the surface of the doped regions is covered by an absorbing film and the doped regions are heated through the absorbing film, enabling an impurity region of the second conductivity type to be formed having two or more of the doped regions that have a same impurity concentration and differing carrier concentrations.

5. 发明授权

US09758873B2 Manufacturing method for magnetic recording medium 有权
公开(公告)号：US09758873B2
公开(公告)日：2017-09-12
申请号：US14487079
申请日：2014-09-15
申请人： FUJI ELECTRIC CO., LTD.
发明人： Narumi Sato , Akiyasu Kumagai , Tomonori Katano , Katsumi Taniguchi , Hiromi Ono
IPC分类号： B05D3/06 , C23C16/56 , C23C16/02 , C23C16/26 , C23C16/36 , G11B5/72 , G11B5/84
CPC分类号： C23C16/56 , C23C16/02 , C23C16/0272 , C23C16/029 , C23C16/26 , C23C16/36 , G11B5/72 , G11B5/82 , G11B5/8408
摘要： A manufacturing method for a magnetic recording medium which includes a magnetic layer, a lower protective layer, an upper protective layer and a lubricating layer on a substrate, and in which the total film thickness of the lower protective layer and the upper protective layer is 2.5 nm or less, includes: 1) depositing the lower protective layer; 2) performing oxygen plasma treatment on the lower protective layer; 3) depositing the upper protective layer; and 4) performing nitrogen plasma treatment on the upper protective layer. It is preferable that the lower protective layer and the upper protective layer are formed of a carbon-based material, and it is further more preferable that the lower protective layer and the upper protective layer are formed of diamond-like carbon. Moreover, it is preferable that the contact angle of the lower protective layer with respect to water in the atmosphere is 25° or less.

6. 发明授权

US09318141B2 Recording medium 有权
标题翻译：录音媒体
公开(公告)号：US09318141B2
公开(公告)日：2016-04-19
申请号：US14372452
申请日：2013-02-28
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tomonori Katano
IPC分类号： G11B5/66 , G11B5/725 , G11B5/72
CPC分类号： G11B5/725 , G11B5/72
摘要： A recording medium includes a magnetic recording layer formed on a substrate; a protective layer formed on the magnetic recording layer and having a total thickness that is equal to or greater than 1 nm but equal to or less than 2 nm. The protective layer is composed of a silicon oxide layer formed on the magnetic recording layer and having a thickness of 0.3 nm or more; a silicon layer formed on the silicon oxide layer and having a thickness of 0.2 nm or more; and an amorphous carbon layer formed on the silicon layer and having a thickness of 0.2 nm or more, and having a hydrogen content equal to or greater than 25.6 at % but equal to or less than 43.3 at %. Thus, magnetic spacing between the magnetic recording layer and a magnetic head advantageously may be reduced while maintaining the thermal insulation characteristics.
摘要翻译：记录介质包括形成在基板上的磁记录层; 形成在磁记录层上并具有等于或大于1nm但等于或小于2nm的总厚度的保护层。保护层由在磁记录层上形成的厚度为0.3nm以上的氧化硅层构成，形成在氧化硅层上并具有0.2nm以上的厚度的硅层; 以及形成在硅层上并具有0.2nm以上的厚度且氢含量在25.6at％以上且43.3at％以下的氢含量的无定形碳层。因此，磁记录层和磁头之间的磁性间隔有利地可以减小，同时保持绝热特性。

7. 发明授权

US09478243B2 Magnetic recording medium for heat-assisted recording system and method for manufacturing same 有权
标题翻译：用于热辅助记录系统的磁记录介质及其制造方法
公开(公告)号：US09478243B2
公开(公告)日：2016-10-25
申请号：US14680007
申请日：2015-04-06
申请人： FUJI ELECTRIC CO., LTD.
发明人： Narumi Sato , Akiyasu Kumagai , Tomonori Katano , Katsumi Taniguchi
IPC分类号： G11B5/66 , G11B5/72 , G11B5/84
CPC分类号： G11B5/72 , G11B5/8408
摘要： The magnetic recording medium for a heat-assisted recording system has a magnetic recording layer on a non-magnetic substrate and a protective layer on top of the magnetic recording layer. The protective layer includes a first lower protective layer on top of the magnetic recording layer, a first upper protective layer on the first lower protective layer, and a second protective layer on the first upper protective layer. The first lower protective layer is composed mainly of an element selected from the group consisting of Si, Al and Cu, and the first upper protective layer is a layer configured by an oxide of the material of the first lower protective layer.
摘要翻译：用于热辅助记录系统的磁记录介质在非磁性基板上具有磁记录层，在磁记录层顶部具有保护层。保护层包括在磁记录层顶部的第一下保护层，第一下保护层上的第一上保护层和第一上保护层上的第二保护层。第一下保护层主要由选自Si，Al和Cu的元素组成，第一上保护层是由第一下保护层的材料的氧化物构成的层。

8. 发明授权

US10546803B2 Semiconductor device and method for manufacturing semiconductor device 有权
公开(公告)号：US10546803B2
公开(公告)日：2020-01-28
申请号：US15902317
申请日：2018-02-22
申请人： FUJI ELECTRIC CO., LTD.
发明人： Tomonori Katano
IPC分类号： H01L23/492 , H01L21/52 , H01L23/00 , H01L23/053
摘要： A semiconductor device includes an insulating circuit-substrate on which a semiconductor chip is mounted, a casing accommodating the insulating circuit-substrate, and a plate-shaped terminal-connecting member having both ends suspended so that the terminal-connecting member extends between two opposite side-walls of the casing, the terminal-connecting member having a connection-terminal and load-absorbing portions, the connection-terminal being provided in a central region between the both ends so as to be connected to the semiconductor chip, the load-absorbing portions being provided between fixing points to the casing and the central region, the rigidity of the load-absorbing portions in a longitudinal direction being equal to or less than 50% of the rigidity of the central region so that the load-absorbing portions absorb load applied from the two side-walls and are deformed.

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