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1. 发明申请

US20230021543A1 OSCILLATION CIRCUIT AND INFORMATION PROCESSING DEVICE 有权
公开(公告)号：US20230021543A1
公开(公告)日：2023-01-26
申请号：US17959918
申请日：2022-10-04
申请人： FUJITSU LIMITED
发明人： Kenichi Kawaguchi , Shoichi MIYAHARA
IPC分类号： H03B7/08
摘要： An oscillation circuit includes a first oscillation circuit that includes: a first diode that has a first negative differential resistance; a first composite inductor in which a first inductor and a second inductor are connected in series, is connected to the first diode in series; a second diode that has a second negative differential resistance and is connected to the first inductor in parallel; and a third diode that has a third negative differential resistance, is connected to the first diode in series, and is connected to the first composite inductor in parallel, wherein a burst pulse is output from a common connection point of the first inductor, the second inductor, and the second diode.

2. 发明授权

US09036673B2 Semiconductor laser 有权
标题翻译：半导体激光器
公开(公告)号：US09036673B2
公开(公告)日：2015-05-19
申请号：US14309130
申请日：2014-06-19
申请人： Fujitsu Limited
发明人： Kenichi Kawaguchi , Yoshiaki Nakata
IPC分类号： H01S5/00 , H01S5/20 , H01S5/183 , H01S5/34 , B82Y20/00 , H01S5/10 , H01S5/343
CPC分类号： H01S5/2027 , B82Y20/00 , H01S5/1042 , H01S5/18341 , H01S5/1835 , H01S5/18369 , H01S5/3428 , H01S5/34306 , Y10S977/951
摘要： A semiconductor laser includes a semiconductor nanowire of a first conductivity type provided over a substrate, a light emitting layer provided around the semiconductor nanowire and insulated at an upper end and a lower end thereof, a cladding layer of a second conductivity type different from the first conductivity type, the cladding layer being provided at an outer periphery of the light emitting layer, a first electrode electrically coupled to an end portion of the semiconductor nanowire, a second electrode electrically coupled to an outer periphery of the cladding layer, a first reflection mirror provided at a one-end portion side of the semiconductor nanowire, and a second reflection mirror provided at the other end portion side of the semiconductor nanowire.
摘要翻译：半导体激光器包括设置在基板上的第一导电类型的半导体纳米线，设置在半导体纳米线周围并在其上端和下端绝缘的发光层，与第一导电类型不同的第二导电类型的包层导电类型，所述包层设置在所述发光层的外周边，电耦合到所述半导体纳米线的端部的第一电极，电耦合到所述包层的外周的第二电极，第一反射镜设置在半导体纳米线的一端部侧，以及设置在半导体纳米线的另一端部侧的第二反射镜。

3. 发明申请

US20230015231A1 SEMICONDUCTOR DEVICE, RESERVOIR COMPUTING SYSTEM, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE 有权
公开(公告)号：US20230015231A1
公开(公告)日：2023-01-19
申请号：US17954385
申请日：2022-09-28
申请人： FUJITSU LIMITED
发明人： Kenichi Kawaguchi , Tsuyoshi Takahashi
IPC分类号： H01L29/06 , H01L27/08 , H01L29/205 , H01L29/885 , H01L21/02 , H01L21/8252 , H01L29/66
摘要： A semiconductor device includes a plurality of tunnel diodes, each of which includes a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type that is provided above the first semiconductor region, the second semiconductor region being a nanowire shape; an insulating film provided around a side surface of the second semiconductor region; a plurality of first electrodes, each coupled to the first semiconductor region; and a plurality of second electrodes, each coupled to the second semiconductor region, wherein the second electrode has a first surface that faces the side surface of the second semiconductor region across the insulating film, and a diameter of a second semiconductor region of a first tunnel diode of the plurality of tunnel diodes is different from a diameter of a second semiconductor region of a second tunnel diode.

4. 发明授权

US11171242B2 Semiconductor device and method for manufacturing semiconductor device 有权
公开(公告)号：US11171242B2
公开(公告)日：2021-11-09
申请号：US16944209
申请日：2020-07-31
申请人： FUJITSU LIMITED
发明人： Kenichi Kawaguchi , Naoya Okamoto , Yusuke Kumazaki , Tsuyoshi Takahashi
IPC分类号： H01L29/786 , H01L29/06 , H01L29/417 , H01L29/423 , H01L21/02 , H01L21/28 , H01L21/285 , H01L29/66
摘要： A semiconductor device includes: a semiconductor layer of a first conductivity type formed over a substrate; a plurality of semiconductor nanowires formed of a compound semiconductor of the first conductivity type extending above the semiconductor layer; and a gate electrode formed around the semiconductor nanowires in a connection portion between the semiconductor layer and the semiconductor nanowires.

5. 发明申请

US20190181616A1 OPTICAL DEVICE AND METHOD FOR MANUFACTURING OPTICAL DEVICE 审中-公开
公开(公告)号：US20190181616A1
公开(公告)日：2019-06-13
申请号：US16278513
申请日：2019-02-18
申请人： FUJITSU LIMITED
发明人： Teruo Kurahashi , Kenichi Kawaguchi
IPC分类号： H01S5/323 , H01S5/32 , H01S5/026 , H01S5/20 , H01S5/02
摘要： An optical device includes lower cladding layer formed of an amorphous insulator on a substrate; a first cladding region, an active region, and a second cladding region formed on the lower cladding layer, one of the first cladding region and the second cladding region being formed on a monocrystal; an upper cladding layer formed of an insulator on the active region; a first electrode connected with the first cladding region; and a second electrode connected with the second cladding region.

6. 发明申请

US20150187973A1 SOLAR CELL AND MANUFACTURING METHOD THEREOF 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20150187973A1
公开(公告)日：2015-07-02
申请号：US14643304
申请日：2015-03-10
申请人： FUJITSU LIMITED
发明人： Kenichi Kawaguchi , Yoshiaki NAKATA
IPC分类号： H01L31/0352 , H01L31/0735 , H01L31/18 , H01L31/0304
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03046 , H01L31/035281 , H01L31/03529 , H01L31/036 , H01L31/0735 , H01L31/184 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a semiconductor substrate of a first conductivity; a pillar-shaped structure constituted by a semiconductor of the first conductivity, the pillar-shaped structure being formed on the semiconductor substrate; a superlattice layer including a barrier layer and a quantum structure layer that are alternately deposited on a side wall of the pillar-shaped structure, the quantum structure layer being constituted by a material having a smaller energy bandgap than that of the barrier layer, the quantum structure layer including a wurtzite type crystal part and a zinc blende type crystal part that are alternately arranged along an axial direction of the pillar-shaped structure; and a semiconductor layer of a second conductivity that is formed so as to surround the superlattice layer, the second conductivity being an opposite conductivity to that of the first conductivity.
摘要翻译：太阳能电池包括具有第一导电性的半导体衬底; 由所述第一导电性的半导体构成的柱状结构，所述柱状结构形成在所述半导体基板上; 包含交替沉积在柱状结构的侧壁上的阻挡层和量子结构层的超晶格层，量子结构层由具有比势垒层的能带隙小的材料构成，量子结构层，其包括沿着柱状结构的轴向交替布置的纤锌矿型晶体部分和闪锌矿型晶体部分; 以及形成为围绕所述超晶格层的第二导电性的半导体层，所述第二导电性与所述第一导电性的导电性相反。

7. 发明授权

US09553224B2 Semiconductor photodetector element and method 有权
标题翻译：半导体光电探测元件及方法
公开(公告)号：US09553224B2
公开(公告)日：2017-01-24
申请号：US14657328
申请日：2015-03-13
申请人： FUJITSU LIMITED
发明人： Kenichi Kawaguchi , Nami Yasuoka , Hiroyasu Yamashita , Yoshiaki Nakata
IPC分类号： H01L31/0352 , H01L31/0232 , H01L31/18 , H01L31/075 , H01L31/107 , B82Y20/00 , H01L31/105
CPC分类号： H01L31/03529 , B82Y20/00 , H01L31/02327 , H01L31/035209 , H01L31/035236 , H01L31/035281 , H01L31/075 , H01L31/105 , H01L31/107 , H01L31/18 , H01L31/184 , Y02E10/544 , Y02E10/548 , Y02P70/521
摘要： A semiconductor photodetector element includes a semiconductor substrate having a first conductivity type; a columnar structure formed on a first surface of the semiconductor substrate, the columnar structure being composed of a semiconductor of the first conductivity type; a light absorption layer formed so as to surround the columnar structure; and a semiconductor layer formed so as to surround the light absorption layer.
摘要翻译：半导体光检测器元件包括具有第一导电类型的半导体衬底; 形成在所述半导体衬底的第一表面上的柱状结构，所述柱状结构由所述第一导电类型的半导体构成; 形成为围绕柱状结构的光吸收层; 以及形成为包围光吸收层的半导体层。

8. 发明授权

US09401444B2 Solar cell and manufacturing method thereof 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US09401444B2
公开(公告)日：2016-07-26
申请号：US14643304
申请日：2015-03-10
申请人： FUJITSU LIMITED
发明人： Kenichi Kawaguchi , Yoshiaki Nakata
IPC分类号： H01L31/0352 , H01L31/18 , B82Y20/00 , H01L31/0304 , H01L31/0735
CPC分类号： H01L31/035236 , B82Y20/00 , H01L31/03046 , H01L31/035281 , H01L31/03529 , H01L31/036 , H01L31/0735 , H01L31/184 , H01L31/1844 , Y02E10/544 , Y02P70/521
摘要： A solar cell includes a semiconductor substrate of a first conductivity; a pillar-shaped structure constituted by a semiconductor of the first conductivity, the pillar-shaped structure being formed on the semiconductor substrate; a superlattice layer including a barrier layer and a quantum structure layer that are alternately deposited on a side wall of the pillar-shaped structure, the quantum structure layer being constituted by a material having a smaller energy bandgap than that of the barrier layer, the quantum structure layer including a wurtzite type crystal part and a zinc blend type crystal part that are alternately arranged along an axial direction of the pillar-shaped structure; and a semiconductor layer of a second conductivity that is formed so as to surround the superlattice layer, the second conductivity being an opposite conductivity to that of the first conductivity.
摘要翻译：太阳能电池包括具有第一导电性的半导体衬底; 由所述第一导电性的半导体构成的柱状结构，所述柱状结构形成在所述半导体基板上; 包含交替沉积在柱状结构的侧壁上的阻挡层和量子结构层的超晶格层，量子结构层由具有比势垒层的能带隙小的材料构成，量子结构层，其包括沿着柱状结构的轴向交替布置的纤锌矿型晶体部分和锌共混型晶体部分; 以及形成为围绕所述超晶格层的第二导电性的半导体层，所述第二导电性与所述第一导电性的导电性相反。

9. 发明申请

US20140301420A1 SEMICONDUCTOR LASER 有权
标题翻译：半导体激光器
公开(公告)号：US20140301420A1
公开(公告)日：2014-10-09
申请号：US14309130
申请日：2014-06-19
申请人： FUJITSU LIMITED
发明人： Kenichi Kawaguchi , Yoshiaki NAKATA
IPC分类号： H01S5/20
CPC分类号： H01S5/2027 , B82Y20/00 , H01S5/1042 , H01S5/18341 , H01S5/1835 , H01S5/18369 , H01S5/3428 , H01S5/34306 , Y10S977/951
摘要： A semiconductor laser includes a semiconductor nanowire of a first conductivity type provided over a substrate, a light emitting layer provided around the semiconductor nanowire and insulated at an upper end and a lower end thereof, a cladding layer of a second conductivity type different from the first conductivity type, the cladding layer being provided at an outer periphery of the light emitting layer, a first electrode electrically coupled to an end portion of the semiconductor nanowire, a second electrode electrically coupled to an outer periphery of the cladding layer, a first reflection mirror provided at a one-end portion side of the semiconductor nanowire, and a second reflection mirror provided at the other end portion side of the semiconductor nanowire.
摘要翻译：半导体激光器包括设置在基板上的第一导电类型的半导体纳米线，设置在半导体纳米线周围并在其上端和下端绝缘的发光层，与第一导电类型不同的第二导电类型的包层导电类型，所述包层设置在所述发光层的外周边，电耦合到所述半导体纳米线的端部的第一电极，电耦合到所述包层的外周的第二电极，第一反射镜设置在半导体纳米线的一端部侧，以及设置在半导体纳米线的另一端部侧的第二反射镜。

10. 发明授权

US10784368B2 Semiconductor device 有权
公开(公告)号：US10784368B2
公开(公告)日：2020-09-22
申请号：US16263515
申请日：2019-01-31
申请人： FUJITSU LIMITED
发明人： Tsuyoshi Takahashi , Kenichi Kawaguchi
IPC分类号： H01L29/66 , H01L29/778 , H01L29/06 , H01L29/423 , H01L29/417 , H01L29/205
摘要： A semiconductor device includes a semiconductor substrate composed of a compound semiconductor, a first semiconductor region disposed over a surface of the semiconductor substrate so as to extend upward from the surface of the semiconductor substrate, the first semiconductor region including a semiconductor nanowire composed of a compound semiconductor, a second semiconductor region disposed over the periphery of a side surface of the first semiconductor region, a gate electrode disposed over the periphery of the second semiconductor region, a drain electrode coupled to one end of the first semiconductor region, and a source electrode coupled to another end of the first semiconductor region, the first and second semiconductor regions being composed of different semiconductor materials.

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