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1. 发明授权

US10203454B2 Dense wavelength-division multiplexing (DWDM) network and method 有权
公开(公告)号：US10203454B2
公开(公告)日：2019-02-12
申请号：US15610366
申请日：2017-05-31
申请人： Futurewei Technologies, Inc.
发明人： Tiangong Liu , Xiao Andy Shen , Qianfan Xu , Feng Zhang
IPC分类号： H04J14/02 , G02B6/28 , G02B6/293 , G02B6/32 , G02B6/42 , F21V8/00
摘要： A dense wavelength-division multiplexing (DWDM) optical network includes an optical input port configured to receive unmodulated optical signals from the optical fiber comprising wavelength channels; one or more modulators coupled to the optical input port wherein the one or more modulators are each configured to modulate a respective first wavelength channel of the wavelength channels with respective data to produce a modulated first wavelength channel when the modulator is in a transmit state; wherein an input optical power of each modulator is kept at substantially a first level and an output optical power of the each modulator is kept at substantially a second level during operation of the modulator. A method and an optical network node are also disclosed therein.

2. 发明申请

US20150260931A1 Free Space Grating Coupler 有权
标题翻译：自由空间光栅耦合器
公开(公告)号：US20150260931A1
公开(公告)日：2015-09-17
申请号：US14209115
申请日：2014-03-13
申请人： Futurewei Technologies, Inc.
发明人： Rongsheng Miao , Zongrong Liu , Qianfan Xu , Xiao Shen
IPC分类号： G02B6/42 , G02B7/02 , G02B7/182 , G02B6/12
CPC分类号： G02B6/30 , G02B6/124 , G02B6/32 , G02B6/322 , G02B6/34 , G02B6/3636 , G02B7/02 , G02B7/182 , G02B2006/12147 , Y10T29/49016
摘要： A free space coupling system comprising a waveguide horizontally positioned on an integrated circuit, and a silicon housing coupled to the waveguide, wherein the silicon housing comprises a reflective surface, a first port, wherein the first port is configured to receive light from an optic source positioned substantially parallel to the waveguide at a coupling point, and a second port, wherein the second port is oriented at about ninety degrees with respect to the first port, and wherein the second port is aligned with a grating port on the waveguide.
摘要翻译：一种自由空间耦合系统，包括水平放置在集成电路上的波导和耦合到波导的硅壳体，其中硅壳体包括反射表面，第一端口，其中第一端口被配置为从光源接收光在耦合点处基本上平行于波导定位，以及第二端口，其中第二端口相对于第一端口定向在大约九十度处，并且其中第二端口与波导上的光栅端口对准。

3. 发明授权

US10268056B2 Interdigitated optical modulator 有权
公开(公告)号：US10268056B2
公开(公告)日：2019-04-23
申请号：US15611642
申请日：2017-06-01
申请人： Futurewei Technologies, Inc.
发明人： Dawei Zheng , Hongbing Lei , Qianfan Xu , Xiao Shen , Yu Sheng Bai
IPC分类号： G02F1/025 , H04B10/54 , B82Y20/00 , G02F1/015
摘要： An optical modulator comprises a silicon substrate, a buried oxide (BOX) layer disposed on top of the silicon substrate, and a ridge waveguide disposed on top of the BOX layer and comprising a first n-type silicon (n-Si) slab, a first gate oxide layer coupled to the first n-Si slab, a first p-type silicon (p-Si) slab coupled to the first gate oxide layer, and a light propagation path that travels sequentially through the first n-Si slab, the first gate oxide layer, and the first p-Si slab.

4. 发明授权

US10133098B2 MOS capacitor optical modulator with transparent conductive and low-refractive-index gate 有权
$MOS capacitor optical modulator with transparent conductive and low-refractive-index gate$
公开(公告)号：US10133098B2
公开(公告)日：2018-11-20
申请号：US14689601
申请日：2015-04-17
申请人： Futurewei Technologies, Inc.
发明人： Hongmin Chen , Qianfan Xu , Li Yang , Xiao Shen , Dawei Zheng , Yusheng Bai , Hongbing Lei , Eric Dudley
IPC分类号： G02F1/025 , G02B6/13 , H01L29/94 , H01L29/06 , H01L29/167 , H01L29/49 , H01L29/51 , H01L29/66 , G02B6/12 , G02F1/015
摘要： A metal-oxide semiconductor (MOS) optical modulator including a doped semiconductor layer having a waveguide structure, a dielectric layer disposed over the waveguide structure of the doped semiconductor layer, a gate region disposed over the dielectric layer, wherein the gate region comprises a transparent electrically conductive material having a refractive index lower than that of silicon, and a metal contact disposed over the gate region. The metal contact, the gate region, and the waveguide structure of the doped semiconductor layer may be vertically aligned with each other.

5. 发明授权

US09838239B2 Digital generation of multi-level phase shifting with a Mach-Zehnder modulator (MZM) 有权
公开(公告)号：US09838239B2
公开(公告)日：2017-12-05
申请号：US14989966
申请日：2016-01-07
申请人： Futurewei Technologies, Inc.
发明人： Morgan Chen , Qianfan Xu , Hungyi Lee , Yifan Gu , Liang Gu , Yen Dang , Gong Lei , Yuming Cao , Xiao Shen , Yu Sheng Bai
IPC分类号： H04B10/00 , H04L27/36 , H04B10/556 , H04B10/50
CPC分类号： H04L27/362 , H04B10/5053 , H04B10/541 , H04B10/5561
摘要： An apparatus comprising a first electrical driver configured to generate a first binary voltage signal according to first data, a second electrical driver configured to generate a second binary voltage signal according to second data, wherein the first data and the second data are different, and a first optical waveguide arm coupled to the first electrical driver and the second electrical driver, wherein the first optical waveguide arm is configured to shift a first phase of a first optical signal propagating along the first optical waveguide arm according to a first voltage difference between the first binary voltage signal and the second binary voltage signal to produce a first multi-level phase-shifted optical signal.

6. 发明申请

US20170269392A1 Interdigitated Optical Modulator 审中-公开
公开(公告)号：US20170269392A1
公开(公告)日：2017-09-21
申请号：US15611642
申请日：2017-06-01
申请人： Futurewei Technologies, Inc.
发明人： Dawei Zheng , Hongbing Lei , Qianfan Xu , Xiao Shen , Yu Sheng Bai
IPC分类号： G02F1/025 , H04B10/54
CPC分类号： G02F1/025 , B82Y20/00 , G02F2001/0151 , H04B10/54 , Y10S977/834
摘要： An optical modulator comprises a silicon substrate, a buried oxide (BOX) layer disposed on top of the silicon substrate, and a ridge waveguide disposed on top of the BOX layer and comprising a first n-type silicon (n-Si) slab, a first gate oxide layer coupled to the first n-Si slab, a first p-type silicon (p-Si) slab coupled to the first gate oxide layer, and a light propagation path that travels sequentially through the first n-Si slab, the first gate oxide layer, and the first p-Si slab.

7. 发明授权

US09696567B2 Interdigitated optical modulator 有权
公开(公告)号：US09696567B2
公开(公告)日：2017-07-04
申请号：US14605744
申请日：2015-01-26
申请人： Futurewei Technologies, Inc.
发明人： Dawei Zheng , Hongbing Lei , Qianfan Xu , Xiao Shen , Yusheng Bai
IPC分类号： G02F1/025 , H04B10/54 , B82Y20/00 , G02F1/015
CPC分类号： G02F1/025 , B82Y20/00 , G02F2001/0151 , H04B10/54 , Y10S977/834
摘要： An optical modulator comprises a silicon substrate, a buried oxide (BOX) layer disposed on top of the silicon substrate, and a ridge waveguide disposed on top of the BOX layer and comprising a first n-type silicon (n-Si) slab, a first gate oxide layer coupled to the first n-Si slab, a first p-type silicon (p-Si) slab coupled to the first gate oxide layer, and a light propagation path that travels sequentially through the first n-Si slab, the first gate oxide layer, and the first p-Si slab.

8. 发明申请

US20160299363A1 Vertical PN Silicon Modulator 有权
标题翻译：垂直PN硅调制器
公开(公告)号：US20160299363A1
公开(公告)日：2016-10-13
申请号：US14680823
申请日：2015-04-07
申请人： Futurewei Technologies, Inc.
发明人： Hongzhen Wei , Li Yang , Qianfan Xu , Xiao Shen
IPC分类号： G02F1/025 , H01L21/3215 , H01L21/306 , H01L21/225
CPC分类号： G02F1/025 , G02F2001/0151 , G02F2001/0152 , H01L21/2253 , H01L21/30604 , H01L21/3215
摘要： A silicon waveguide comprising a waveguide core that comprises a first positively doped (P1) region vertically adjacent to a second positively doped (P2) region. The P2 region is more heavily positively doped than the P1 region. A first negatively doped (N1) region is vertically adjacent to a second negatively doped (N2) region. The N2 region is more heavily negatively doped than the N1 region. The N2 region and the P2 region are positioned vertically adjacent to form a positive-negative (PN) junction. The N1 region, the N2 region, the P1 region, and the P2 region are positioned as a vertical PN junction and configured to completely deplete the P2 region of positive ions and completely deplete the N2 region of negative ions when a voltage drop is applied across the N1 region, the N2 region, the P1 region, and the P2 region.
摘要翻译：一种硅波导，包括波导芯，该波导芯包括与第二正掺杂（P2）区垂直相邻的第一正掺杂（P1）区。 P2区域比P1区域更重的正掺杂。第一负掺杂（N1）区域与第二负掺杂（N2）区域垂直相邻。 N2区域比N1区域负掺杂。 N2区域和P2区域垂直相邻地形成正负（PN）结。 N1区域，N2区域，P1区域和P2区域被定位为垂直PN结，并且被配置为当施加电压降时，完全耗尽正离子的P2区域并且完全耗尽负离子的N 2区域 N1区域，N2区域，P1区域和P2区域。

9. 发明申请

US20190058932A1 All-Optical Networks Based on Switchable Wavelength Connects (SWCs) 审中-公开
公开(公告)号：US20190058932A1
公开(公告)日：2019-02-21
申请号：US16044208
申请日：2018-07-24
申请人： Futurewei Technologies, Inc.
发明人： Qianfan Xu , Feng Zhang , Xiao Andy Shen
IPC分类号： H04Q11/00 , H04B10/66 , H04B10/50 , H04J14/02
摘要： An all-optical network comprises: a first network; a second network; and a PWXC coupling the first network to the second network and comprising passive optical components. A method comprises: receiving a first optical signal from a first tail node of a first network; directing the first optical signal from a first input port of a PWXC to a first output port of the PWXC using first passive optical components; and transmitting the first optical signal to a third head node of a third network. An all-optical network comprising: a light bank; a first network coupled to the light bank; a second network coupled to the light bank; and a first PWXC coupling the first network and the second network.

10. 发明授权

US10120135B2 Inverse taper waveguides for low-loss mode converters 有权
公开(公告)号：US10120135B2
公开(公告)日：2018-11-06
申请号：US15614333
申请日：2017-06-05
申请人： Futurewei Technologies, Inc.
发明人： Li Yang , Huapu Pan , Qianfan Xu , Dawei Zheng , Xiao Shen
IPC分类号： G02B6/12 , G02B6/14 , G02B6/30 , G02B6/122 , G02B6/132 , G02B6/136
摘要： An apparatus comprises a substrate comprising a silicon dioxide (SiO2) material disposed on top of the substrate, a silicon waveguide comprising a first adiabatic tapering and enclosed in the silicon dioxide material, and a low-index waveguide disposed on top of the substrate and adjacent to the first adiabatic tapering. A mode converter fabrication method comprises obtaining a mode converter comprising a substrate, a silicon waveguide disposed on the substrate and comprising a sidewall and a first adiabatic tapering, and a hard mask disposed on the silicon waveguide and comprising a silicon dioxide layer, wherein the hard mask does not cover the sidewall, and oxidizing the silicon waveguide and the hard mask, wherein oxidizing the silicon waveguide and the hard mask encloses the silicon waveguide within the silicon dioxide layer.

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