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    • 2. 发明申请
    • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH ELECTRIC POWER GENERATION FUNCTION
    • US20220149022A1
    • 2022-05-12
    • US17435937
    • 2020-03-02
    • GCE Institute Inc.
    • Hiroshi GOTOMinoru SAKATA
    • H01L25/16
    • PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device with an electric power generation function, which can prevent the circuit board from increasing in size.
      MEANS TO SOLVE THE PROBLEM: A semiconductor integrated circuit device 200 with an electric power generation function has a semiconductor integrated circuit device and a thermoelectric element 1. The semiconductor integrated circuit device includes a package 210 to house a semiconductor integrated circuit chip 230. The semiconductor integrated circuit chip 230 has a lower surface opposing the circuit board and an upper surface opposing the mounting surface. The thermoelectric element 1 includes a casing unit having a housing unit, a first electrode unit provided inside the housing unit, a second electrode unit provided inside the housing unit, separated from and opposing the first electrode unit in the first direction, and having a work function different from that of the first electrode unit, and a middle unit provided between the first electrode unit and the second electrode unit, and including a nanoparticle having a work function between the work function of the first electrode unit and the work function of the second electrode unit, in the housing unit. The casing unit is provided inside a circuit board 260.
    • 7. 发明申请
    • SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE WITH ELECTRIC POWER GENERATION FUNCTION
    • US20220149259A1
    • 2022-05-12
    • US17435810
    • 2020-03-02
    • GCE Institute Inc.
    • Hiroshi GOTOMinoru SAKATA
    • H01L35/32H01L35/08H01L25/16
    • PROBLEM TO BE SOLVED: To provide a semiconductor integrated circuit device with an electric power generation function, which can prevent the circuit board from increasing in size.
      MEANS TO SOLVE THE PROBLEM: A semiconductor integrated circuit device 200 with an electric power generation function has a semiconductor integrated circuit device and a thermoelectric element 1. The semiconductor integrated circuit device includes a package 210 to house a semiconductor integrated circuit chip 230. The semiconductor integrated circuit chip 230 has a lower surface opposing the circuit board and an upper surface opposing the mounting surface. The thermoelectric element 1 includes a casing unit having a housing unit, a first electrode unit provided inside the housing unit, a second electrode unit provided inside the housing unit, separated from and opposing the first electrode unit in the first direction, and having a work function different from that of the first electrode unit, and a middle unit provided between the first electrode unit and the second electrode unit, and including a nanoparticle having a work function between the work function of the first electrode unit and the work function of the second electrode unit, in the housing unit. The casing unit is provided on the upper surface side of the semiconductor integrated circuit chip 230.