专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US10727308B2 Gate contact structure for a transistor 有权
公开(公告)号：US10727308B2
公开(公告)日：2020-07-28
申请号：US16548335
申请日：2019-08-22
申请人： GLOBALFOUNDRIES Inc.
发明人： Ruilong Xie , Hao Tang , Cheng Chi , Daniel Chanemougame , Lars W. Liebmann , Mark V. Raymond
IPC分类号： H01L29/417 , H01L21/768 , H01L29/66 , H01L21/285 , H01L23/535 , H01L29/45 , H01L29/08 , H01L29/78 , H01L29/165
摘要： One device disclosed herein includes a gate above a semiconductor substrate, the gate comprising a gate structure and a gate cap, and conductive source/drain metallization structures adjacent the gate, each of the conductive source/drain metallization structures having a front face and a recess defined in each of the conductive source/drain metallization structures. In this example, the device further includes a spacer structure comprising recess filling portions that substantially fill the recesses and a portion that extends across a portion of the upper surface of the gate cap, wherein a portion of the gate cap is exposed within the spacer structure, an insulating material within the spacer structure and on the exposed portion of the gate cap, a gate contact opening that exposes a portion of an upper surface of the gate structure, and a conductive gate contact structure in the conductive gate contact opening.

2. 发明授权

US10566248B1 Work function metal patterning for N-P spaces between active nanostructures using unitary isolation pillar 有权
公开(公告)号：US10566248B1
公开(公告)日：2020-02-18
申请号：US16047044
申请日：2018-07-27
申请人： GLOBALFOUNDRIES INC.
发明人： Daniel Chanemougame , Ruilong Xie , Chanro Park , Guillaume Bouche
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/423 , H01L29/06
摘要： A method includes forming an isolation pillar between first and second active nanostructures for adjacent FETs. When a first WFM surrounding the second active nanostructure is removed as part of a WFM patterning process, creating a discontinuity in the first metal. The pillar or the discontinuity in the first metal on the part of the pillar prevent the etching from reaching and removing the first WFM on the first active nanostructure. The isolation pillar creates a gate cut isolation in a selected gate region, and can be shortened in another gate region to allow for gate sharing between adjacent FETs.

3. 发明授权

US10388652B2 Intergrated circuit structure including single diffusion break abutting end isolation region, and methods of forming same 有权
公开(公告)号：US10388652B2
公开(公告)日：2019-08-20
申请号：US15811961
申请日：2017-11-14
申请人： GLOBALFOUNDRIES INC.
发明人： Yongiun Shi , Lei Sun , Laertis Economikos , Ruilong Xie , Lars Liebmann , Chanro Park , Daniel Chanemougame , Min Gyu Sung , Hsien-Ching Lo , Haiting Wang
IPC分类号： H01L27/088 , H01L21/311 , H01L21/8234 , H01L29/66 , H01L29/06 , H01L27/02 , H01L21/762 , H01L21/308 , H01L21/3105 , H01L21/027
摘要： The disclosure provides integrated circuit (IC) structures with single diffusion break (SDB) abutting end isolation regions, and methods of forming the same. An IC structure may include: a plurality of fins positioned on a substrate; a plurality of gate structures each positioned on the plurality of fins and extending transversely across the plurality of fins; an insulator region positioned on the plurality of fins and laterally between the plurality of gate structures; at least one single diffusion break (SDB) positioned within the insulator region and one of the plurality of fins, the at least one SDB region extending from an upper surface of the substrate to an upper surface of the insulator region; and an end isolation region abutting a lateral end of the at least one SDB along a length of the plurality of gate structures, the end isolation region extending substantially in parallel with the plurality of fins.

4. 发明授权

US10304833B1 Method of forming complementary nano-sheet/wire transistor devices with same depth contacts 有权
公开(公告)号：US10304833B1
公开(公告)日：2019-05-28
申请号：US15898812
申请日：2018-02-19
申请人： GLOBALFOUNDRIES Inc.
发明人： Puneet Harischandra Suvarna , Bipul C. Paul , Ruilong Xie , Bartlomiej Jan Pawlak , Lars W. Liebmann , Daniel Chanemougame , Nicholas V. LiCausi , Andreas Knorr
IPC分类号： H01L29/775 , H01L29/78 , H01L27/092 , H01L21/02 , H01L21/8238 , H01L29/06 , H01L29/10 , H01L29/423 , H01L27/12
摘要： A device includes a first nano-sheet of a first semiconductor material. First source/drain regions are positioned adjacent ends of the first nano-sheet. A first dielectric material is positioned above the first source/drain regions. A second nano-sheet of a second semiconductor material is positioned above the first nano-sheet. Second source/drain regions are positioned adjacent ends of the second nano-sheet and above the first dielectric material. A gate structure has a first portion capacitively coupled to the first nano-sheet and a second portion capacitively coupled to the second nano-sheet. A first source/drain contact contacts a first portion of the second source/drain regions in a first region where the first and second source/drain regions do not vertically overlap. The first source/drain contact has a first depth that extends below a height of an upper surface of the first source/drain regions in a second region where the first and second source/drain regions vertically overlap.

5. 发明授权

US10290549B2 Integrated circuit structure, gate all-around integrated circuit structure and methods of forming same 有权
公开(公告)号：US10290549B2
公开(公告)日：2019-05-14
申请号：US15695229
申请日：2017-09-05
申请人： GLOBALFOUNDRIES INC.
发明人： Ruilong Xie , Julien Frougier , Min Gyu Sung , Edward Joseph Nowak , Nigel G. Cave , Lars Liebmann , Daniel Chanemougame , Andreas Knorr
IPC分类号： H01L21/8238 , H01L27/092 , H01L29/06 , H01L29/423 , H01L29/786 , H01L29/66 , H01L27/11
摘要： The disclosure is directed to gate all-around integrated circuit structures, finFETs having a dielectric isolation, and methods of forming the same. The gate all-around integrated circuit structure may include a first insulator region within a substrate; a pair of remnant liner stubs disposed within the first insulator region; a second insulator region laterally adjacent to the first insulator region within the substrate; a pair of fins over the first insulator region, each fin in the pair of fins including an inner sidewall facing the inner sidewall of an adjacent fin in the pair of fins and an outer sidewall opposite the inner sidewall; and a gate structure substantially surrounding an axial portion of the pair of fins and at least partially disposed over the first and second insulator regions, wherein each remnant liner stub is substantially aligned with the inner sidewall of a respective fin of the pair of fins.

6. 发明授权

US10026824B1 Air-gap gate sidewall spacer and method 有权
公开(公告)号：US10026824B1
公开(公告)日：2018-07-17
申请号：US15408540
申请日：2017-01-18
申请人： GLOBALFOUNDRIES INC.
发明人： Daniel Chanemougame , Andre Labonte , Ruilong Xie , Lars Liebmann , Nigel Cave , Guillaume Bouche
IPC分类号： H01L29/49 , H01L23/535 , H01L29/66 , H01L21/768 , H01L29/06 , H01L21/306 , H01L21/84 , H01L21/28 , H01L27/12 , H01L27/092 , H01L27/088 , H01L29/78 , H01L29/417 , H01L21/02 , H01L29/40 , H01L21/764 , H01L21/8238 , H01L27/108 , H01L21/8234
摘要： Disclosed are integrated circuit (IC) structures and formation methods. In the methods, a gate with a sacrificial gate cap and a sacrificial gate sidewall spacer is formed on a channel region. The cap and sidewall spacer are removed, creating a cavity with a lower portion between the sidewalls of the gate and adjacent metal plugs and with an upper portion above the lower portion and the gate. A first dielectric layer is deposited, forming an air-gap in the lower portion and lining the upper portion. A second dielectric layer is deposited, filling the upper portion. During formation of a gate contact opening (optionally over an active region), the second dielectric layer is removed and the first dielectric layer is anisotropically etched, thereby exposing the gate and creating a dielectric spacer with a lower air-gap segment and an upper solid segment. Metal deposited into the opening forms the gate contact.

7. 发明授权

US09941162B1 Self-aligned middle of the line (MOL) contacts 有权
公开(公告)号：US09941162B1
公开(公告)日：2018-04-10
申请号：US15354212
申请日：2016-11-17
申请人： GLOBALFOUNDRIES INC.
发明人： Daniel Chanemougame , Ruilong Xie , Lars Liebmann
IPC分类号： H01L21/768 , H01L21/8238 , H01L29/66 , H01L29/40 , H01L29/417 , H01L27/092 , H01L21/28 , H01L23/522 , H01L29/78
CPC分类号： H01L21/76897 , H01L21/28247 , H01L21/76816 , H01L21/76834 , H01L21/823814 , H01L21/823821 , H01L21/823828 , H01L21/823842 , H01L21/823864 , H01L21/823871 , H01L23/5226 , H01L23/5283 , H01L27/092 , H01L27/0924 , H01L29/401 , H01L29/41783 , H01L29/41791 , H01L29/66545 , H01L29/6656 , H01L29/66613 , H01L29/785 , H01L2029/7858
摘要： Disclosed are methods and integrated circuit (IC) structures. The methods enable formation of a gate contact on a gate above (or close thereto) an active region of a field effect transistor (FET) and provide protection against shorts between the gate contact and metal plugs on source/drain regions and between the gate and source/drain contacts to the metal plugs. A gate with a dielectric cap and dielectric sidewall spacer is formed on a FET channel region. Metal plugs with additional dielectric caps are formed on the FET source/drain regions such that the dielectric sidewall spacer is between the gate and the metal plugs and between the dielectric cap and the additional dielectric caps. The dielectric cap, dielectric sidewall spacer and additional dielectric caps are different materials preselected to be selectively etchable, allowing for misalignment of a contact opening to the gate without risking exposure of any metal plugs and vice versa.

8. 发明授权

US09299721B2 Method for making semiconductor device with different fin sets 有权
标题翻译：制造具有不同翅片组的半导体器件的方法
公开(公告)号：US09299721B2
公开(公告)日：2016-03-29
申请号：US14280998
申请日：2014-05-19
申请人： STMICROELECTRONICS, INC , GLOBALFOUNDRIES Inc. , INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人： Qing Liu , Xiuyu Cai , Ruilong Xie , Chun-chen Yeh , Kejia Wang , Daniel Chanemougame
IPC分类号： H01L21/30 , H01L27/12 , H01L29/66
CPC分类号： H01L27/0886 , H01L21/845 , H01L27/1211 , H01L29/0649 , H01L29/161 , H01L29/66795
摘要： A method for making a semiconductor device may include forming, above a substrate, first and second semiconductor regions laterally adjacent one another and each including a first semiconductor material. The first semiconductor region may have a greater vertical thickness than the second semiconductor region and define a sidewall with the second semiconductor region. The method may further include forming a spacer above the second semiconductor region and adjacent the sidewall, and forming a third semiconductor region above the second semiconductor region and adjacent the spacer, with the second semiconductor region including a second semiconductor material different than the first semiconductor material. The method may also include removing the spacer and portions of the first semiconductor material beneath the spacer, forming a first set of fins from the first semiconductor region, and forming a second set of fins from the second and third semiconductor regions.
摘要翻译：制造半导体器件的方法可以包括在衬底上方形成彼此横向相邻并且包括第一半导体材料的第一和第二半导体区域。第一半导体区域可以具有比第二半导体区域更大的垂直厚度并且限定具有第二半导体区域的侧壁。该方法还可以包括在第二半导体区域的上方形成并邻近侧壁的间隔物，以及在第二半导体区域上方并邻近间隔物形成第三半导体区域，其中第二半导体区域包括与第一半导体材料不同的第二半导体材料。该方法还可以包括在间隔物下面移除间隔物和第一半导体材料的部分，从第一半导体区域形成第一组散热片，以及从第二和第三半导体区域形成第二组散热片。

9. 发明授权

US10692991B2 Gate-all-around field effect transistors with air-gap inner spacers and methods 有权
公开(公告)号：US10692991B2
公开(公告)日：2020-06-23
申请号：US16123160
申请日：2018-09-06
申请人： GLOBALFOUNDRIES INC.
发明人： Daniel Chanemougame , Julien Frougier , Ruilong Xie
IPC分类号： H01L29/66 , H01L29/78 , H01L29/06 , H01L29/423 , H01L21/311 , H01L21/3065
摘要： Disclosed are structures including a gate-all-around field effect transistor (GAAFET) with air-gap inner spacers. The GAAFET includes a stack of nanoshapes that extend laterally between source/drain regions, a gate that wraps around a center portion of each nanoshape, and a gate sidewall spacer on external sidewalls of the gate. The GAAFET also includes air-gap inner spacers between the gate and the source/drain regions. Each air-gap inner spacer includes: two vertical sections within the gate sidewall spacer on opposing sides of the stack and adjacent to a source/drain region; and horizontal sections below the nanoshapes and extending laterally between the vertical sections. Also discloses are methods of forming the structures and the method include forming preliminary inner spacers in inner spacer cavities prior to source/drain region formation. After source/drain regions are formed, the preliminary inner spacers are removed and the cavities are sealed off, thereby forming the air-gap inner spacers.

10. 发明申请

US20200075456A1 HYBRID DUAL DAMASCENE STRUCTURES WITH ENLARGED CONTACTS 审中-公开
公开(公告)号：US20200075456A1
公开(公告)日：2020-03-05
申请号：US16114600
申请日：2018-08-28
申请人： GLOBALFOUNDRIES Inc.
发明人： Daniel Chanemougame , Julien Frougier , Ruilong Xie
IPC分类号： H01L23/48 , H01L21/768 , H01L29/08 , H01L23/532
摘要： Structures for field-effect transistors and methods for fabricating a structure for field-effect transistors. A contact structure is formed that includes a first contact arranged over a source/drain region and a second contact arranged over the first contact. A dielectric cap is formed over the second contact. A via is formed that extends in a vertical direction through the dielectric cap to the second contact. An interconnect is formed over the dielectric cap, and is connected by the via with the second contact.

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式