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1. 发明授权

US09230802B2 Transistor(s) with different source/drain channel junction characteristics, and methods of fabrication 有权
标题翻译：具有不同源/漏通道结特性的晶体管及其制造方法
公开(公告)号：US09230802B2
公开(公告)日：2016-01-05
申请号：US14282094
申请日：2014-05-20
申请人： GLOBALFOUNDRIES Inc.
发明人： Neeraj Tripathi , Christopher Michael Prindle
IPC分类号： H01L21/30 , H01L21/46 , H01L21/02 , H01L29/66 , H01L29/78 , H01L29/08
CPC分类号： H01L21/02494 , H01L21/02658 , H01L29/0847 , H01L29/66636 , H01L29/78
摘要： Field-effect transistors (FETs) and methods of fabricating field-effect transistors are provided, with one or both of a source cavity or a drain cavity having different channel junction characteristics. The methods include, for instance, recessing a semiconductor material to form a cavity adjacent to a channel region of the transistor, the recessing defining a bottom channel interface surface and a sidewall channel interface surface within the cavity; providing a protective liner over the sidewall channel interface surface, with the bottom channel interface surface being exposed within the cavity; processing the bottom channel interface surface to facilitate forming a first channel junction of the transistor; and removing the protective liner from over the sidewall channel interface surface, and subsequently processing the sidewall channel interface surface to form a second channel junction of the transistor, where the first and second channel junctions have different channel junction characteristics.
摘要翻译：提供场效应晶体管（FET）和制造场效应晶体管的方法，其中源腔或漏腔中的一个或两个具有不同的沟道结特征。所述方法包括例如使半导体材料凹陷以形成与晶体管的沟道区相邻的空腔，所述凹陷限定所述空腔内的底部沟道界面表面和侧壁通道界面表面; 在所述侧壁通道界面表面上提供保护衬垫，所述底部通道界面表面暴露在所述空腔内; 处理底部通道界面以便于形成晶体管的第一通道结; 以及从所述侧壁通道界面表面上移除所述保护性衬垫，以及随后处理所述侧壁通道界面以形成所述晶体管的第二通道结，其中所述第一和第二通道结具有不同的通道结特性。

2. 发明授权

US09613962B2 Fin liner integration under aggressive pitch 有权
公开(公告)号：US09613962B2
公开(公告)日：2017-04-04
申请号：US15172201
申请日：2016-06-03
申请人： GLOBALFOUNDRIES Inc.
发明人： Min Gyu Sung , Neeraj Tripathi
IPC分类号： H01L21/02 , H01L21/8238 , H01L29/161 , H01L29/16 , H01L27/092 , H01L29/66 , H01L21/311 , H01L29/06 , H01L29/165 , H01L29/167 , H01L29/10
CPC分类号： H01L27/0924 , H01L21/02123 , H01L21/02164 , H01L21/0217 , H01L21/823807 , H01L21/823821 , H01L21/845 , H01L27/1211 , H01L29/0638 , H01L29/0653 , H01L29/1054 , H01L29/1083 , H01L29/16 , H01L29/161 , H01L29/165 , H01L29/167 , H01L29/66803 , H01L29/66818
摘要： A method of forming a fin liner and the resulting device are provided. Embodiments include forming silicon (Si) fins over negative channel field-effect transistor (nFET) and positive channel field-effect transistor (pFET) regions of a substrate, each of the Si fins having a silicon nitride (SiN) cap; forming a SiN liner over the Si fins and SiN caps; forming a block mask over the pFET region; removing the SiN liner in the nFET region; removing the block mask in the pFET region; forming a diffusion barrier liner over the Si fins; forming a dielectric layer over and between the Si fins; planarizing the dielectric layer down to the SiN caps in the nFET region; and recessing the dielectric layer to expose an upper portion of the Si fins.

3. 发明授权

US09385189B1 Fin liner integration under aggressive pitch 有权
标题翻译：翅片衬垫整合在积极的音调
公开(公告)号：US09385189B1
公开(公告)日：2016-07-05
申请号：US14835786
申请日：2015-08-26
申请人： GLOBALFOUNDRIES Inc.
发明人： Min Gyu Sung , Neeraj Tripathi
IPC分类号： H01L21/02 , H01L21/311 , H01L29/06 , H01L27/092 , H01L29/16 , H01L29/161 , H01L21/8238 , H01L29/66
CPC分类号： H01L27/0924 , H01L21/02123 , H01L21/02164 , H01L21/0217 , H01L21/823807 , H01L21/823821 , H01L21/845 , H01L27/1211 , H01L29/0638 , H01L29/0653 , H01L29/1054 , H01L29/1083 , H01L29/16 , H01L29/161 , H01L29/165 , H01L29/167 , H01L29/66803 , H01L29/66818
摘要： A method of forming a fin liner and the resulting device are provided. Embodiments include forming silicon (Si) fins over negative channel field-effect transistor (nFET) and positive channel field-effect transistor (pFET) regions of a substrate, each of the Si fins having a silicon nitride (SiN) cap; forming a SiN liner over the Si fins and SiN caps; forming a block mask over the pFET region; removing the SiN liner in the nFET region; removing the block mask in the pFET region; forming a diffusion barrier liner over the Si fins; forming a dielectric layer over and between the Si fins; planarizing the dielectric layer down to the SiN caps in the nFET region; and recessing the dielectric layer to expose an upper portion of the Si fins.
摘要翻译：提供了形成翅片衬垫的方法和所得到的装置。实施例包括在衬底的负沟道场效应晶体管（nFET）和正沟道场效应晶体管（pFET）区域上形成硅（Si）鳍，每个Si散热片具有氮化硅（SiN）帽; 在Si翅片和SiN帽上形成SiN衬垫; 在所述pFET区域上形成块掩模; 去除nFET区域中的SiN衬垫; 去除pFET区域中的块掩模; 在Si散热片上形成扩散阻挡衬垫; 在Si散热片之上和之间形成介电层; 将电介质层平坦化到nFET区域中的SiN帽; 并使介电层凹陷以暴露Si散热片的上部。

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