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1. 发明授权

US08084372B2 Substrate processing method and computer storage medium 有权
标题翻译：基板加工方法和计算机存储介质
公开(公告)号：US08084372B2
公开(公告)日：2011-12-27
申请号：US12192422
申请日：2008-08-15
申请人： Gen You , Makoto Muramatsu , Hiroyuki Fujii , Shouichi Terada , Takanori Nishi
发明人： Gen You , Makoto Muramatsu , Hiroyuki Fujii , Shouichi Terada , Takanori Nishi
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01L21/3125 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/316 , H01L21/6715 , H01L21/67178 , H01L21/76825 , H01L21/76828
摘要： In the present invention, a coating solution containing polysilazane is applied to a substrate to form a coating film. Thereafter, an ultraviolet ray is applied to the coating film formed on the substrate to cut a molecular bond of polysilazane in the coating film. Then, the coating film in which the molecular bond of polysilazane has been cut is oxidized while the coating film is being heated. Then, the oxidized coating film is baked at a baking temperature equal to or higher than a heating temperature when the coating film is oxidized.
摘要翻译：在本发明中，将含有聚硅氮烷的涂布溶液涂布在基材上，形成涂膜。然后，对形成在基板上的涂膜施加紫外线，以切割涂膜中聚硅氮烷的分子键。然后，在涂覆膜被加热的同时，其中已经切割聚硅氮烷的分子键的涂膜被氧化。然后，在涂膜被氧化时，在等于或高于加热温度的烘烤温度下烘烤氧化涂膜。

2. 发明申请

US20090053904A1 SUBSTRATE PROCESSING METHOD AND COMPUTER STORAGE MEDIUM 有权
标题翻译：基板处理方法和计算机存储介质
公开(公告)号：US20090053904A1
公开(公告)日：2009-02-26
申请号：US12192422
申请日：2008-08-15
申请人： Gen You , Makoto Muramatsu , Hiroyuki Fujii , Shouichi Terada , Takanori Nishi
发明人： Gen You , Makoto Muramatsu , Hiroyuki Fujii , Shouichi Terada , Takanori Nishi
IPC分类号： H01L21/31 , G06F19/00
CPC分类号： H01L21/3125 , H01L21/02164 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/02348 , H01L21/316 , H01L21/6715 , H01L21/67178 , H01L21/76825 , H01L21/76828
摘要： In the present invention, a coating solution containing polysilazane is applied to a substrate to form a coating film. Thereafter, an ultraviolet ray is applied to the coating film formed on the substrate to cut a molecular bond of polysilazane in the coating film. Then, the coating film in which the molecular bond of polysilazane has been cut is oxidized while the coating film is being heated. Then, the oxidized coating film is baked at a baking temperature equal to or higher than a heating temperature when the coating film is oxidized.
摘要翻译：在本发明中，将含有聚硅氮烷的涂布溶液涂布在基材上，形成涂膜。然后，对形成在基板上的涂膜施加紫外线，以切割涂膜中聚硅氮烷的分子键。然后，在涂覆膜被加热的同时，其中已经切割聚硅氮烷的分子键的涂膜被氧化。然后，在涂膜被氧化时，在等于或高于加热温度的烘烤温度下烘烤氧化涂膜。

3. 发明授权

US07757626B2 Substrate processing apparatus and substrate processing method 失效
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US07757626B2
公开(公告)日：2010-07-20
申请号：US11504581
申请日：2006-08-16
申请人： Hiroshi Shinya , Shouichi Terada , Tsuyoshi Mizuno , Yukihiro Wakamoto
发明人： Hiroshi Shinya , Shouichi Terada , Tsuyoshi Mizuno , Yukihiro Wakamoto
IPC分类号： B05C11/02 , B05C11/00 , B24B29/00
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译：在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。具有平坦形成的下表面的压板设置在保持台的上方。压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。

4. 发明申请

US20070048449A1 Substrate processing apparatus and substrate processing method 失效
标题翻译：基板加工装置及基板处理方法
公开(公告)号：US20070048449A1
公开(公告)日：2007-03-01
申请号：US11504581
申请日：2006-08-16
申请人： Hiroshi Shinya , Shouichi Terada , Tsuyoshi Mizuno , Yukihiro Wakamoto
发明人： Hiroshi Shinya , Shouichi Terada , Tsuyoshi Mizuno , Yukihiro Wakamoto
IPC分类号： B05D3/12 , B05D3/02
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译：在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。具有平坦形成的下表面的压板设置在保持台的上方。压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。

5. 发明申请

US20100221436A1 SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD 失效
标题翻译：基板处理装置和基板处理方法
公开(公告)号：US20100221436A1
公开(公告)日：2010-09-02
申请号：US12781867
申请日：2010-05-18
申请人： Hiroshi Shinya , Shouichi Terada , Tsuyoshi Mizuno , Yukihiro Wakamoto
发明人： Hiroshi Shinya , Shouichi Terada , Tsuyoshi Mizuno , Yukihiro Wakamoto
IPC分类号： B05D3/02 , B05D3/12
CPC分类号： H01L21/67178 , B05D1/42 , B05D3/0254 , B05D3/12 , H01L21/67092 , H01L21/67184 , H01L21/6719 , H01L21/67207
摘要： In the present invention, a holding table incorporating a heater is provided, for example, in a treatment container of a planarization unit. A pressing plate having a lower surface formed flat is disposed above the holding table. The pressing plate is movable in the vertical direction and can lower to the holding table to press a resist film on the substrate from above. The pressing plate intermittently presses the upper surface of the resist film to planarize the upper surface while the heater is heating the substrate on the holding table at a predetermined temperature to dry the resist film. According to the present invention, a coating film applied on the substrate can be sufficiently planarized and dried.
摘要翻译：在本发明中，例如在平坦化单元的处理容器中设置有加热器的保持台。具有平坦形成的下表面的压板设置在保持台的上方。压板可以在垂直方向上移动，并且可以从保持台向下方移动，以从上方按压基板上的抗蚀剂膜。压板间歇地按压抗蚀剂膜的上表面以平坦化上表面，同时加热器以预定温度加热保持台上的基板以干燥抗蚀剂膜。根据本发明，涂布在基板上的涂膜可以被充分平坦化并干燥。

6. 发明申请

US20060029388A1 Liquid processing apparatus processing a substrate surface with a processing liquid, liquid processing method, and liquid condition detection apparatus detecting fluctuation of the processing liquid 失效
标题翻译：液体处理装置用处理液处理基板表面，液体处理方法和检测处理液体的波动的液体状态检测装置
公开(公告)号：US20060029388A1
公开(公告)日：2006-02-09
申请号：US11187846
申请日：2005-07-25
申请人： Shouichi Terada , Nobuyuki Sata
发明人： Shouichi Terada , Nobuyuki Sata
IPC分类号： G03D5/00
CPC分类号： H01L21/6715 , H01L21/67253
摘要： In a liquid processing apparatus a spin chuck holds a wafer having a surface supplied with a liquid to be applied through a nozzle receiving the liquid through a feed path and whether the liquid passing through the feed path has fluctuation is detected by a fluctuation detection device. Thus the liquid's condition in the feed path can be determined significantly accurately. Supplying the substrate with the liquid without fluctuation allows the substrate to receive the liquid in an optimal condition. A satisfactory liquid process can thus be performed.
摘要翻译：在液体处理装置中，旋转卡盘通过供给路径保持具有供给通过接收液体的喷嘴的待施加液体的表面的晶片，并且通过波动检测装置检测通过进给路径的液体是否起伏。因此，可以显着精确地确定进料路径中的液体状况。在不引起波动的情况下向液体供给液体使基板在最佳状态下接收液体。因此可以进行满意的液体处理。

7. 发明授权

US07968468B2 Substrate treatment apparatus and substrate treatment method 有权
标题翻译：基板处理装置及基板处理方法
公开(公告)号：US07968468B2
公开(公告)日：2011-06-28
申请号：US11562909
申请日：2006-11-22
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
IPC分类号： H01L21/302 , H01L21/461 , H01L21/311
CPC分类号： H01L21/316 , H01L21/31055 , H01L21/31111 , H01L21/6715
摘要： In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.
摘要翻译：在将涂布液在其表面上具有凹凸的基板供给到基板的表面上形成涂膜的基板处理方法中，将涂布液供给到旋转基板上，形成涂膜加热衬底的前表面和其上形成有涂膜的衬底以调节涂膜的蚀刻条件。接下来，将蚀刻溶液供给到旋转基板上以蚀刻涂膜，然后将该涂布液供给到基板，在基板的前表面形成平坦的涂膜。此后，加热基板以固化涂膜。这样使涂膜均匀，高精度地平坦化，而不经历诸如化学机械抛光的高负载过程。

8. 发明申请

US20070150112A1 SUBSTRATE PROCESSING METHOD AND PROGRAM 有权
标题翻译：基板处理方法和程序
公开(公告)号：US20070150112A1
公开(公告)日：2007-06-28
申请号：US11611632
申请日：2006-12-15
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
IPC分类号： B05D5/12 , G05B21/00 , G06F19/00
CPC分类号： H01L21/6715 , H01L21/67219
摘要： In the present invention, an insulating material is applied onto a substrate in a coating treatment unit to form a coating insulating film. The substrate is heated in the heating processing unit, whereby the coating insulating film is hardened partway. A brush is then pressed against the front surface of the coating insulating film in a planarization unit and moved along the front surface of the coating insulating film, thereby planarizing the coating insulating film. The substrate is then heated to completely harden the coating insulating film. According to the present invention, the coating film can be planarized without using the CMP technology.
摘要翻译：在本发明中，在涂布处理单元中的基板上涂布绝缘材料，形成涂布绝缘膜。基板在加热处理单元中被加热，由此涂覆绝缘膜在中途硬化。然后在平面化单元中将刷子压在涂覆绝缘膜的前表面上，并沿着涂层绝缘膜的前表面移动，从而使涂层绝缘膜平坦化。然后将基板加热以完全硬化涂层绝缘膜。根据本发明，可以在不使用CMP技术的情况下平坦化涂膜。

9. 发明申请

US20070098901A1 Method for forming thin film and film-forming device 失效
标题翻译：薄膜和成膜装置的形成方法
公开(公告)号：US20070098901A1
公开(公告)日：2007-05-03
申请号：US11585860
申请日：2006-10-25
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
IPC分类号： B05D3/04 , B05C11/02 , B05C11/00
CPC分类号： H01L21/6715 , H01L21/02123 , H01L21/02222 , H01L21/02282 , H01L21/02337 , H01L21/31058 , H01L21/3125 , H01L21/316 , H01L21/76819
摘要： It is an object to provide a method for forming a thin film which can be uniformly and precisely planarized without a high-loaded process as in a chemical mechanical polishing method and to provide a device used for the method. In a method for forming a thin film on a surface of a-semiconductor wafer as a substrate to be processed by supplying a coating solution to the wafer having asperities on the surface thereof, a thin film of a coating solution is planarized by placing the wafer having the thin film formed on the surface thereof in a solvent gas atmosphere generated in a treatment chamber, then spraying a solvent gas toward the surface of the wafer from a solvent-gas-supplying nozzle and, simultaneously, relatively moving the wafer and/or the solvent-gas-supplying nozzle in directions parallel to each other.
摘要翻译：本发明的目的是提供一种形成薄膜的方法，其可以在化学机械抛光方法中没有高负载工艺的情况下均匀且精确地平坦化，并提供用于该方法的装置。在通过向其表面具有凹凸的晶片供给涂布液的半导体晶片的表面上形成作为待加工基板的薄膜的方法中，通过将晶片的薄膜放置在处理室中产生的溶剂气体气氛中在其表面上形成薄膜，然后从溶剂气体供给喷嘴向晶片的表面喷射溶剂气体，同时相对移动晶片和/或溶剂气体供给喷嘴在彼此平行的方向上。

10. 发明授权

US08864933B2 Substrate treatment apparatus and substrate treatment method 有权
标题翻译：基板处理装置及基板处理方法
公开(公告)号：US08864933B2
公开(公告)日：2014-10-21
申请号：US12908698
申请日：2010-10-20
申请人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
发明人： Shouichi Terada , Tsuyoshi Mizuno , Takeshi Uehara
IPC分类号： C23F1/08 , H01L21/316 , H01L21/3105 , H01L21/311 , H01L21/67
CPC分类号： H01L21/316 , H01L21/31055 , H01L21/31111 , H01L21/6715
摘要： In a substrate treatment method for supplying a coating solution to a substrate with projections and depressions on a front surface thereof to form a coating film on the front surface of the substrate, the coating solution is supplied to the rotating substrate to form a coating film on the front surface of the substrate, and the substrate having the coating film formed thereon is heated to adjust an etching condition of the coating film. Next, the etching solution is supplied to the rotating substrate to etch the coating film, and thereafter the coating solution is supplied to the substrate to form a flat coating film on the front surface of the substrate. Thereafter, the substrate is heated to cure the coating film. This flattens the coating film with uniformity and high accuracy without undergoing a high-load process such as chemical mechanical polishing.
摘要翻译：在将涂布液在其表面上具有凹凸的基板供给到基板的表面上形成涂膜的基板处理方法中，将涂布液供给到旋转基板上，形成涂膜加热衬底的前表面和其上形成有涂膜的衬底以调节涂膜的蚀刻条件。接下来，将蚀刻溶液供给到旋转基板上以蚀刻涂膜，然后将该涂布液供给到基板，在基板的前表面形成平坦的涂膜。此后，加热基板以固化涂膜。这样使涂膜均匀，高精度地平坦化，而不经历诸如化学机械抛光的高负载过程。

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