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    • 7. 发明申请
    • MANUFACTURING PROCESSES FOR FORMING METALLIZED FILM CAPACITORS AND RELATED METALLIZED FILM CAPACITORS
    • 用于形成金属化膜电容器和相关金属化膜电容器的制造工艺
    • US20170062144A1
    • 2017-03-02
    • US14842426
    • 2015-09-01
    • General Electric Company
    • Daniel Qi TanRi-an ZhaoJeffrey S. SullivanLili ZhangKevin Warner Flanagan
    • H01G13/00H01G4/08
    • H01G4/308H01G4/012H01G4/015H01G4/18H01G4/32H01G13/006
    • A process for forming a capacitor is presented. The process includes providing a laminate including a dielectric layer disposed on a sacrificial substrate, forming a free-standing metallized dielectric layer and packaging the free-standing metallized dielectric layer to form a capacitor. The dielectric layer includes a polyetherimide. The step of forming the free-standing metallized dielectric layer is performed by: (a) disposing a metal layer on the dielectric layer to form a metalized laminate such that a metalized dielectric layer is formed on the sacrificial substrate, and removing the sacrificial substrate to form the free-standing metallized dielectric layer; or (b) removing the sacrificial substrate from the laminate to form a free-standing dielectric layer, and disposing a metal layer on the free-standing dielectric layer to form the free-standing metallized dielectric layer. A capacitor formed by the process is presented. A process for forming a capacitor by a roll-to-roll processing technique is also presented.
    • 提出了一种形成电容器的工艺。 该方法包括提供包括设置在牺牲衬底上的介电层的层压体,形成独立的金属化介电层并封装自立式金属化介电层以形成电容器。 电介质层包括聚醚酰亚胺。 通过以下步骤进行形成独立的金属化介电层的步骤:(a)在电介质层上设置金属层以形成金属化层压体,使得在牺牲基板上形成金属化介电层,并将牺牲基板去除 形成独立的金属化介电层; 或(b)从层压体中去除牺牲基板以形成独立的电介质层,并在自支撑电介质层上设置金属层以形成独立的金属化介质层。 提出了一种通过该过程形成的电容器。 还提出了通过卷对卷处理技术形成电容器的方法。