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1. 发明申请

US20050233553A1 Method of fabricating semiconductor by nitrogen doping of silicon film 失效
标题翻译：通过硅膜氮掺杂制造半导体的方法
公开(公告)号：US20050233553A1
公开(公告)日：2005-10-20
申请号：US11097445
申请日：2005-04-04
申请人： Michael Kountz , George Engle , Steven Evers
发明人： Michael Kountz , George Engle , Steven Evers
IPC分类号： C23C16/24 , C23C16/34 , H01L21/205 , H01L21/365
CPC分类号： C23C16/345 , C23C16/24 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N2, is activated or ionized in a reactor before it is deposited on the substrate.
摘要翻译：制造半导体的方法使用化学气相沉积或等离子体增强化学气相沉积法将非晶硅膜沉积在诸如ASIC晶片的衬底的暴露表面上。非晶硅膜掺杂氮气以降低膜的导电性和/或增加膜的击穿电压。在将反应器沉积在基材上之前，将氮气N 2 N 2在反应器中活化或离子化。

2. 发明申请

US20050178329A1 Formation of photoconductive and photovoltaic films 失效
标题翻译：光电导和光伏膜的形成
公开(公告)号：US20050178329A1
公开(公告)日：2005-08-18
申请号：US11059981
申请日：2005-02-17
申请人： George Engle
发明人： George Engle
IPC分类号： C23C14/00 , C23C14/06 , C23C14/32 , C23C14/34 , C23C16/00 , C23C16/448 , C23C16/50 , C25B11/00 , H01J37/32 , H01J37/34
CPC分类号： C23C14/0623 , C23C14/34 , C23C14/3464 , C23C16/4485 , C23C16/50 , H01J37/32009 , H01J37/34
摘要： A deposition system includes a vacuum reaction chamber with a substrate holder positioned in it. The substrate holder is for carrying a substrate therein. A sputtering apparatus is also positioned in the vacuum reaction chamber. The sputtering apparatus is configured to direct sputtered material towards the substrate to form a sputtered material region thereon. A plasma enhanced chemical vapor deposition (PECVD) apparatus is positioned in the vacuum reaction chamber. The PECVD apparatus is configured to deposit a PECVD material region thereon the substrate. The first PECVD apparatus includes a first PECVD electrode movable from a first position towards the substrate and a second position away from the substrate.
摘要翻译：沉积系统包括具有定位在其中的基板保持架的真空反应室。衬底保持器用于在其中承载衬底。溅射装置也位于真空反应室中。溅射装置被配置为将溅射的材料引向衬底以在其上形成溅射材料区域。等离子体增强化学气相沉积（PECVD）装置位于真空反应室中。 PECVD装置被配置为在其上沉积PECVD材料区域。第一PECVD装置包括可从第一位置朝向衬底移动的第一PECVD电极和远离衬底的第二位置。

3. 发明申请

US20120216874A1 Delivery of Iodine Gas 有权
标题翻译：交付碘气
公开(公告)号：US20120216874A1
公开(公告)日：2012-08-30
申请号：US13466726
申请日：2012-05-08
申请人： George Engle
发明人： George Engle
IPC分类号： F16L53/00
CPC分类号： C23C16/4485 , Y10T137/0318 , Y10T137/6416
摘要： A method and system for delivering iodine gas is presented. The pure iodine gas flow can be at a controlled, known flow rate, and furthermore be held at a positive pressure in relation to a process chamber. In an exemplary embodiment, pure iodine gas is transported without the use of an inert carrier gas. This is facilitated in part by maintaining the iodine gas chamber at a higher pressure than the processing chamber. In one exemplary embodiment, an iodine vessel receives solid iodine supplied by an iodine fill source and is heated to produce pure iodine gas. In addition, a control system monitors and controls the operating conditions in the iodine vessel and maintains a positive pressure in the iodine vessel. The iodine delivery system may include a valve system configured to control the flow of iodine gas through the iodine delivery system and into a process chamber.
摘要翻译：提出了一种用于输送碘气的方法和系统。纯碘气流可以是受控的已知流速，并且进一步相对于处理室保持在正压力。在一个示例性实施方案中，纯碘气被输送而不使用惰性载气。这部分地通过将碘气室保持在比处理室更高的压力来促进。在一个示例性实施方案中，碘容器接收由碘填充源供应的固体碘，并加热以产生纯碘气体。此外，控制系统监测和控制碘容器中的操作条件并在碘容器中保持正压。碘输送系统可以包括阀系统，该阀系统被配置为控制通过碘输送系统的碘气流并进入处理室。

4. 发明申请

US20120164412A1 Formation of Photoconductive and Photovoltaic Films 审中-公开
标题翻译：光电导和光伏薄膜的形成
公开(公告)号：US20120164412A1
公开(公告)日：2012-06-28
申请号：US13367467
申请日：2012-02-07
申请人： George Engle
发明人： George Engle
IPC分类号： B32B7/02 , C23C14/34
CPC分类号： C23C14/0623 , C23C14/34 , C23C14/3464 , C23C16/02 , C23C16/4485 , C23C16/50 , H01J37/32009 , H01J37/34 , Y10T428/24942
摘要： The present application discloses a method and system of depositing a lead selenide film onto another material. The lead selenide film may used in a photoconductive application or a photovoltaic application. Furthermore, the applications may be responsive to infrared radiation at ambient temperature. In one embodiment, a method includes sputtering the lead selenide film, performing a sensitization process, and applying a passivation film. In one exemplary embodiment, a p-n junction is formed by directly adhering a lead selenide film to a silicon substrate.
摘要翻译：本申请公开了将硒化铅膜沉积到另一种材料上的方法和系统。硒化铅膜可用于光电导应用或光伏应用。此外，应用可以响应于环境温度下的红外辐射。在一个实施方案中，一种方法包括溅射硒化铅膜，进行敏化过程和施加钝化膜。在一个示例性实施例中，通过将硒化铅膜直接粘附到硅衬底来形成p-n结。

5. 发明授权

US08195039B2 Delivery of iodine gas 失效
标题翻译：交付碘气
公开(公告)号：US08195039B2
公开(公告)日：2012-06-05
申请号：US12334039
申请日：2008-12-12
申请人： George Engle
发明人： George Engle
IPC分类号： A01G13/06
CPC分类号： C23C16/4485 , Y10T137/0318 , Y10T137/6416
摘要： A method and system for delivering iodine gas is presented. The pure iodine gas flow can be at a controlled, known flow rate, and furthermore be held at a positive pressure in relation to a process chamber. In an exemplary embodiment, pure iodine gas is transported without the use of an inert carrier gas. This is facilitated in part by maintaining the iodine gas chamber at a higher pressure than the processing chamber.In one exemplary embodiment, an iodine vessel receives solid iodine supplied by an iodine fill source and is heated to produce pure iodine gas. In addition, a control system monitors and controls the operating conditions in the iodine vessel and maintains a positive pressure in the iodine vessel. The iodine delivery system may include a valve system configured to control the flow of iodine gas through the iodine delivery system and into a process chamber.
摘要翻译：提出了一种用于输送碘气的方法和系统。纯碘气流可以是受控的已知流速，并且进一步相对于处理室保持在正压力。在一个示例性实施方案中，纯碘气被输送而不使用惰性载气。这部分地通过将碘气室保持在比处理室更高的压力来促进。在一个示例性实施方案中，碘容器接收由碘填充源供应的固体碘，并加热以产生纯碘气体。此外，控制系统监测和控制碘容器中的操作条件并在碘容器中保持正压。碘输送系统可以包括阀系统，该阀系统被配置为控制通过碘输送系统的碘气流并进入处理室。

6. 发明授权

US07638413B2 Method of fabricating semiconductor by nitrogen doping of silicon film 失效
标题翻译：通过硅膜氮掺杂制造半导体的方法
公开(公告)号：US07638413B2
公开(公告)日：2009-12-29
申请号：US11097445
申请日：2005-04-04
申请人： Michael Kountz , George Engle , Steven Evers
发明人： Michael Kountz , George Engle , Steven Evers
IPC分类号： H01L21/20
CPC分类号： C23C16/345 , C23C16/24 , H01L21/02532 , H01L21/02576 , H01L21/0262
摘要： A method of fabricating a semiconductor uses chemical vapor deposition, or plasma-enhanced chemical vapor deposition, to deposit an amorphous silicon film on an exposed surface of a substrate, such as ASIC wafer. The amorphous silicon film is doped with nitrogen to reduce the conductivity of the film and/or to augment the breakdown voltage of the film. Nitrogen gas, N2, is activated or ionized in a reactor before it is deposited on the substrate.
摘要翻译：制造半导体的方法使用化学气相沉积或等离子体增强化学气相沉积法将非晶硅膜沉积在诸如ASIC晶片的衬底的暴露表面上。非晶硅膜掺杂氮气以降低膜的导电性和/或增加膜的击穿电压。在沉积在基底上之前，氮气，N2在反应器中被活化或离子化。

7. 发明授权

US08133364B2 Formation of photoconductive and photovoltaic films 失效
标题翻译：光电导和光伏膜的形成
公开(公告)号：US08133364B2
公开(公告)日：2012-03-13
申请号：US12266372
申请日：2008-11-06
申请人： George Engle
发明人： George Engle
IPC分类号： C23C14/32
CPC分类号： C23C14/0623 , C23C14/34 , C23C14/3464 , C23C16/02 , C23C16/4485 , C23C16/50 , H01J37/32009 , H01J37/34 , Y10T428/24942
摘要： The present application discloses a method and system of depositing a lead selenide film onto another material. The lead selenide film may used in a photoconductive application or a photovoltaic application. Furthermore, the applications may be responsive to infrared radiation at ambient temperature. In one embodiment, a method includes sputtering the lead selenide film, performing a sensitization process, and applying a passivation film. In one exemplary embodiment, a p-n junction is formed by directly adhering a lead selenide film to a silicon substrate.
摘要翻译：本申请公开了将硒化铅膜沉积到另一种材料上的方法和系统。硒化铅膜可用于光电导应用或光伏应用。此外，应用可以响应于环境温度下的红外辐射。在一个实施方案中，一种方法包括溅射硒化铅膜，进行敏化过程和施加钝化膜。在一个示例性实施例中，通过将硒化铅膜直接粘附到硅衬底来形成p-n结。

8. 发明申请

US20090154908A1 Delivery of Iodine Gas 失效
标题翻译：交付碘气
公开(公告)号：US20090154908A1
公开(公告)日：2009-06-18
申请号：US12334039
申请日：2008-12-12
申请人： George Engle
发明人： George Engle
IPC分类号： C23C16/448
CPC分类号： C23C16/4485 , Y10T137/0318 , Y10T137/6416
摘要： A method and system for delivering iodine gas is presented. The pure iodine gas flow can be at a controlled, known flow rate, and furthermore be held at a positive pressure in relation to a process chamber. In an exemplary embodiment, pure iodine gas is transported without the use of an inert carrier gas. This is facilitated in part by maintaining the iodine gas chamber at a higher pressure than the processing chamber.In one exemplary embodiment, an iodine vessel receives solid iodine supplied by an iodine fill source and is heated to produce pure iodine gas. In addition, a control system monitors and controls the operating conditions in the iodine vessel and maintains a positive pressure in the iodine vessel. The iodine delivery system may include a valve system configured to control the flow of iodine gas through the iodine delivery system and into a process chamber.
摘要翻译：提出了一种用于输送碘气的方法和系统。纯碘气流可以是受控的已知流速，并且进一步相对于处理室保持在正压力。在一个示例性实施方案中，纯碘气被输送而不使用惰性载气。这部分地通过将碘气室保持在比处理室更高的压力来促进。在一个示例性实施方案中，碘容器接收由碘填充源供应的固体碘，并加热以产生纯碘气体。此外，控制系统监测和控制碘容器中的操作条件并在碘容器中保持正压。碘输送系统可以包括阀系统，该阀系统被配置为控制通过碘输送系统的碘气流并进入处理室。

9. 发明申请

US20090120501A1 FORMATION OF PHOTOCONDUCTIVE AND PHOTOVOLTAIC FILMS 失效
标题翻译：形成光电和光伏膜
公开(公告)号：US20090120501A1
公开(公告)日：2009-05-14
申请号：US12266372
申请日：2008-11-06
申请人： George Engle
发明人： George Engle
IPC分类号： H01L31/04 , H01L21/20 , C23C14/34
CPC分类号： C23C14/0623 , C23C14/34 , C23C14/3464 , C23C16/02 , C23C16/4485 , C23C16/50 , H01J37/32009 , H01J37/34 , Y10T428/24942
摘要： The present application discloses a method and system of depositing a lead selenide film onto another material. The lead selenide film may used in a photoconductive application or a photovoltaic application. Furthermore, the applications may be responsive to infrared radiation at ambient temperature. In one embodiment, a method includes sputtering the lead selenide film, performing a sensitization process, and applying a passivation film. In one exemplary embodiment, a p-n junction is formed by directly adhering a lead selenide film to a silicon substrate.
摘要翻译：本申请公开了将硒化铅膜沉积到另一种材料上的方法和系统。硒化铅膜可用于光电导应用或光伏应用。此外，应用可以响应于环境温度下的红外辐射。在一个实施方案中，一种方法包括溅射硒化铅膜，进行敏化过程和施加钝化膜。在一个示例性实施例中，通过将硒化铅膜直接粘附到硅衬底来形成p-n结。

10. 发明申请

US20070173732A1 Method and apparatus for wireless brain interface 审中-公开
标题翻译：无线脑界面的方法和装置
公开(公告)号：US20070173732A1
公开(公告)日：2007-07-26
申请号：US10587806
申请日：2005-01-28
申请人： Elvir Causevic , George Engle
发明人： Elvir Causevic , George Engle
IPC分类号： A61B5/04
CPC分类号： A61B5/0476 , A61B5/0031 , A61B2503/40
摘要： An implantable logic circuit configured to receive analog bioelectric signals from one or more implanted electrodes, perform amplification, A/D conversion of the received analog bioelectric signals, signal sampling, and to communicate the signals to a remote processing system over a wireless communications link. Power for the implantable logic circuit is derived from an external source over a wireless link.
摘要翻译：被配置为从一个或多个注入电极接收模拟生物电信号的可植入逻辑电路，执行所接收的模拟生物电信号的放大，A / D转换，信号采样，以及通过无线通信链路将信号传送到远程处理系统。可植入逻辑电路的功率来自无线链路上的外部源。

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