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1. 发明授权

US08003542B2 Multiple spacer steps for pitch multiplication 有权
标题翻译：用于间距倍增的多个间隔步长
公开(公告)号：US08003542B2
公开(公告)日：2011-08-23
申请号：US12489337
申请日：2009-06-22
申请人： Sanket Sant , Gurtej S. Sandhu , Neal R. Rueger
发明人： Sanket Sant , Gurtej S. Sandhu , Neal R. Rueger
IPC分类号： H01L21/302
CPC分类号： H01L21/3088 , H01L21/0337 , H01L21/3085 , H01L21/3086 , H01L21/76802 , H01L27/1052
摘要： Multiple pitch-multiplied spacers are used to form mask patterns having features with exceptionally small critical dimensions. One of each pair of spacers formed around a plurality of mandrels is removed and alternating layers, formed of two mutually selectively etchable materials, are deposited around the remaining spacers. Layers formed of one of the materials are then etched, leaving behind vertically-extending layers formed of the other of the materials, which form a mask pattern. Alternatively, instead of depositing alternating layers, amorphous carbon is deposited around the remaining spacers followed by a plurality of cycles of forming pairs of spacers on the amorphous carbon, removing one of the pairs of spacers and depositing an amorphous carbon layer. The cycles can be repeated to form the desired pattern. Because the critical dimensions of some features in the pattern can be set by controlling the width of the spaces between spacers, exceptionally small mask features can be formed.
摘要翻译：使用多个间距倍数的间隔物来形成具有特别小的临界尺寸的特征的掩模图案。去除围绕多个心轴形成的每对间隔件中的一个，并且由两个相互选择性可蚀刻的材料形成的交替层围绕剩余的间隔物沉积。然后蚀刻由一种材料形成的层，留下由形成掩模图案的另一种材料形成的垂直延伸层。或者，代替沉积交替层，无定形碳沉积在剩余的间隔物周围，随后在无定形碳上形成一对间隔物的多个循环，去除一对隔离物中的一个并沉积无定形碳层。可以重复循环以形成所需的图案。由于图案中的某些特征的临界尺寸可以通过控制间隔物之间的间隔的宽度来设定，所以可以形成特别小的掩模特征。

2. 发明授权

US07344948B2 Methods of forming transistors 有权
标题翻译：形成晶体管的方法
公开(公告)号：US07344948B2
公开(公告)日：2008-03-18
申请号：US10050347
申请日：2002-01-15
申请人： Gurtej S. Sandhu , John T. Moore , Neal R. Rueger
发明人： Gurtej S. Sandhu , John T. Moore , Neal R. Rueger
IPC分类号： H01L21/4763
CPC分类号： H01L21/02332 , H01L21/0234 , H01L21/265 , H01L21/28061 , H01L21/28167 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L29/513 , H01L29/518 , H01L29/6659 , H01L29/7833
摘要： The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400° C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer. Source/drain regions are formed within the semiconductive substrate, and are gatedly connected to one another by the at least one conductive layer. The invention also encompasses transistor structures.
摘要翻译：本发明包括将氮掺入含氧化硅的层中的方法。将含氧化硅的层暴露于含氮等离子体中以将氮引入层中。氮气随后在层内热退火以将至少一些氮与硅结合在层内。本发明还包括形成晶体管的方法。在半导体衬底上形成栅氧化层。栅氧化层包括二氧化硅。将栅极氧化层暴露于含氮等离子体中以将氮引入层中，并且在暴露期间该层保持在小于或等于400℃。随后，层内的氮被热退火以将至少大部分氮与硅结合。在栅极氧化物层上形成至少一个导电层。源极/漏极区域形成在半导体衬底内，并且通过至少一个导电层彼此门控连接。本发明还包括晶体管结构。

3. 发明申请

US20080038933A1 Plasma and electron beam etching device and method 失效
标题翻译：等离子体和电子束蚀刻装置及方法
公开(公告)号：US20080038933A1
公开(公告)日：2008-02-14
申请号：US11503762
申请日：2006-08-14
申请人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
发明人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
IPC分类号： H01L21/31
CPC分类号： H01L21/31116 , C23C16/0245 , C23C16/042 , C23C16/26 , C23C16/517 , H01J37/28 , H01J37/3178 , H01J37/3233 , H01J2237/2605 , H01J2237/3137 , H01J2237/3151 , H01J2237/31732 , H01J2237/3174 , H01L27/1052 , Y10S438/905 , Y10S438/909
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
摘要翻译：示出了在半导体工艺中选择性蚀刻的方法和装置。在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。电子束为选择性化学物质提供活化。在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。

4. 发明授权

US08058130B2 Method of forming a nitrogen-enriched region within silicon-oxide-containing masses 有权
标题翻译：在含氧化硅的质量块内形成富氮区的方法
公开(公告)号：US08058130B2
公开(公告)日：2011-11-15
申请号：US12196988
申请日：2008-08-22
申请人： Gurtej S. Sandhu , John T. Moore , Neal R. Rueger
发明人： Gurtej S. Sandhu , John T. Moore , Neal R. Rueger
IPC分类号： H01L21/00
CPC分类号： H01L21/02332 , H01L21/0234 , H01L21/265 , H01L21/28061 , H01L21/28167 , H01L21/28185 , H01L21/28202 , H01L21/3144 , H01L29/513 , H01L29/518 , H01L29/6659 , H01L29/7833
摘要： The invention encompasses a method of incorporating nitrogen into a silicon-oxide-containing layer. The silicon-oxide-containing layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer. The nitrogen is subsequently thermally annealed within the layer to bond at least some of the nitrogen to silicon within the layer. The invention also encompasses a method of forming a transistor. A gate oxide layer is formed over a semiconductive substrate. The gate oxide layer comprises silicon dioxide. The gate oxide layer is exposed to a nitrogen-containing plasma to introduce nitrogen into the layer, and the layer is maintained at less than or equal to 400° C. during the exposing. Subsequently, the nitrogen within the layer is thermally annealed to bond at least a majority of the nitrogen to silicon. At least one conductive layer is formed over the gate oxide layer. Source/drain regions are formed within the semiconductive substrate, and are gatedly connected to one another by the at least one conductive layer. The invention also encompasses transistor structures.
摘要翻译：本发明包括将氮掺入含氧化硅的层中的方法。将含氧化硅的层暴露于含氮等离子体中以将氮引入层中。氮气随后在层内热退火以将至少一些氮与硅结合在层内。本发明还包括形成晶体管的方法。在半导体衬底上形成栅氧化层。栅氧化层包括二氧化硅。将栅极氧化层暴露于含氮等离子体中以将氮引入层中，并且在暴露期间该层保持在小于或等于400℃。随后，层内的氮被热退火以将至少大部分氮与硅结合。在栅极氧化物层上形成至少一个导电层。源极/漏极区域形成在半导体衬底内，并且通过至少一个导电层彼此门控连接。本发明还包括晶体管结构。

5. 发明申请

US20110056625A1 ELECTRON BEAM ETCHING DEVICE AND METHOD 审中-公开
标题翻译：电子束蚀刻装置及方法
公开(公告)号：US20110056625A1
公开(公告)日：2011-03-10
申请号：US12945135
申请日：2010-11-12
申请人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
发明人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
IPC分类号： C23F1/08 , H01L21/306 , C23C16/00
CPC分类号： H01L21/31116
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
摘要翻译：示出了在半导体工艺中选择性蚀刻的方法和装置。在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。电子束为选择性化学物质提供活化。在一个实例中，反应物质由含卤素和碳的气体源产生。在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。

6. 发明授权

US07718080B2 Electronic beam processing device and method using carbon nanotube emitter 有权
标题翻译：电子束处理装置及使用碳纳米管发射体的方法
公开(公告)号：US07718080B2
公开(公告)日：2010-05-18
申请号：US11503690
申请日：2006-08-14
申请人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
发明人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
IPC分类号： H01L21/302 , B82B1/00
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/3127
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.
摘要翻译：示出了在半导体工艺中选择性蚀刻的方法和装置。在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。电子束为选择性化学物质提供活化。在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。在一个实例中，使用诸如碳纳米管阵列的电子束阵列在处理操作期间选择性地暴露表面。

7. 发明申请

US20080038928A1 Electron beam etching device and method 有权
标题翻译：电子束蚀刻装置及方法
公开(公告)号：US20080038928A1
公开(公告)日：2008-02-14
申请号：US11503681
申请日：2006-08-14
申请人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
发明人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
IPC分类号： H01L21/302
CPC分类号： H01L21/31116
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a halogen and carbon containing gas source. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation.
摘要翻译：示出了在半导体工艺中选择性蚀刻的方法和装置。在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。电子束为选择性化学物质提供活化。在一个实例中，反应物质由含卤素和碳的气体源产生。在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。

8. 发明申请

US20080038894A1 Electronic beam processing device and method using carbon nanotube emitter 有权
标题翻译：电子束处理装置及使用碳纳米管发射体的方法
公开(公告)号：US20080038894A1
公开(公告)日：2008-02-14
申请号：US11503690
申请日：2006-08-14
申请人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
发明人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
IPC分类号： H01L21/336
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/3127
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.
摘要翻译：示出了在半导体工艺中选择性蚀刻的方法和装置。在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。电子束为选择性化学物质提供活化。在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。在一个实例中，使用诸如碳纳米管阵列的电子束阵列在处理操作期间选择性地暴露表面。

9. 发明申请

US20070278180A1 ELECTRON INDUCED CHEMICAL ETCHING FOR MATERIALS CHARACTERIZATION 审中-公开
标题翻译：电子诱导化学蚀刻用于材料表征
公开(公告)号：US20070278180A1
公开(公告)日：2007-12-06
申请号：US11421711
申请日：2006-06-01
申请人： Mark J. Williamson , Gurtej S. Sandhu , Justin R. Arrington , Neal R. Rueger
发明人： Mark J. Williamson , Gurtej S. Sandhu , Justin R. Arrington , Neal R. Rueger
IPC分类号： C03C25/68 , G01L21/30
CPC分类号： G01N1/32
摘要： A method of imaging and identifying materials on and below the surface of a structure is described. The method may be used in areas as small as one micron in diameter, and may remove a thin portion of the topmost material, repeating the analysis, until a desired depth is obtained. An energetic beam, such as an electron beam, is directed at a selected surface location. The surface has an added layer of a solid, fluid or gaseous reactive material, such as a directed stream of a fluorocarbon, and the energetic beam disassociates the reactive material in the region of the beam into radicals that chemically attack the surface. The reaction products from the radical attack on the surface are pumped away from the surface and analyzed using various methods, such as optical emission, infrared, atomic absorption, or Raman spectroscopy.
摘要翻译：描述了一种在结构表面上和下方对材料进行成像和识别的方法。该方法可以用于直径小至一微米的区域中，并且可以去除最上层材料的薄部分，重复分析，直到获得所需的深度。诸如电子束的能量束被引导到选定的表面位置。该表面具有固体，流体或气态反应性材料（例如碳氟化合物的定向流）的添加层，并且能量束将光束区域中的反应性材料分解成化学侵蚀表面的自由基。从表面的自由基攻击产生的反应产物从表面抽出并用各种方法进行分析，如光发射，红外，原子吸收或拉曼光谱。

10. 发明授权

US08414787B2 Electron beam processing device and method using carbon nanotube emitter 有权
标题翻译：电子束处理装置及使用碳纳米管发射体的方法
公开(公告)号：US08414787B2
公开(公告)日：2013-04-09
申请号：US12780686
申请日：2010-05-14
申请人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
发明人： Neal R. Rueger , Mark J. Williamson , Gurtej S. Sandhu
IPC分类号： H01L21/302 , B82B1/00
CPC分类号： H01L21/31116 , H01L21/31144 , H01L21/3127
摘要： Methods and devices for selective etching in a semiconductor process are shown. Chemical species generated in a reaction chamber provide both a selective etching function and concurrently form a protective coating on other regions. An electron beam provides activation to selective chemical species. In one example, reactive species are generated from a plasma source to provide an increased reactive species density. Addition of other gasses to the system can provide functions such as controlling a chemistry in a protective layer during a processing operation. In one example an electron beam array such as a carbon nanotube array is used to selectively expose a surface during a processing operation.
摘要翻译：示出了在半导体工艺中选择性蚀刻的方法和装置。在反应室中产生的化学物质既提供选择性蚀刻功能又在其它区域形成保护涂层。电子束为选择性化学物质提供活化。在一个实例中，从等离子体源产生反应性物质以提供增加的反应物种密度。在系统中添加其他气体可以提供诸如在处理操作期间控制保护层中的化学物质的功能。在一个实例中，使用诸如碳纳米管阵列的电子束阵列在处理操作期间选择性地暴露表面。

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