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1. 发明申请

US20170200590A1 HYDROGEN PLASMA BASED CLEANING PROCESS FOR ETCH HARDWARE 有权
公开(公告)号：US20170200590A1
公开(公告)日：2017-07-13
申请号：US15397429
申请日：2017-01-03
申请人： Applied Materials, Inc.
发明人： Chirantha RODRIGO , Jingchun ZHANG , Lili JI , Anchuan WANG , Nitin K. INGLE
IPC分类号： H01J37/32 , H01L21/67
CPC分类号： H01J37/32862 , C23C16/4405 , H01J37/32357 , H01J37/3244 , H01J37/32724 , H01J2237/334 , H01L21/31116 , H01L21/31138 , H01L21/67069 , Y10S438/905
摘要： The present disclosure provides methods for cleaning chamber components post substrate etching. In one example, a method for cleaning includes activating an etching gas mixture using a plasma to create an activated etching gas mixture, the etching gas mixture comprising hydrogen-containing precursor and a fluorine-containing precursor and delivering the activated etching gas mixture to a processing region of a process chamber, the process chamber having an edge ring positioned therein, the edge ring comprising a catalyst and anticatalytic material, wherein the activated gas removes the anticatalytic material from the edge ring.

2. 发明授权

US09206511B2 Method and system for supplying a cleaning gas into a process chamber 有权
标题翻译：用于将清洁气体供应到处理室中的方法和系统
公开(公告)号：US09206511B2
公开(公告)日：2015-12-08
申请号：US14087671
申请日：2013-11-22
申请人： Applied Materials, Inc.
发明人： Ramprakash Sankarakrishnan , Dale R. Du Bois , Ganesh Balasubramanian , Karthik Janakiraman , Juan Carlos Rocha-Alvarez , Thomas Nowak , Visweswaren Sivaramakrishnan , Hichem M'Saad
IPC分类号： C23C16/00 , C23C16/44 , F16K31/08 , B08B5/00 , C23C16/455 , B08B7/00 , F16K31/06
CPC分类号： F16K31/0655 , B08B5/00 , B08B7/0021 , C23C16/4405 , C23C16/4409 , C23C16/45561 , F16K1/221 , F16K1/224 , F16K31/06 , F16K31/088 , Y10S438/905
摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.
摘要翻译：提供了一种用于清洁处理室的方法和设备。在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道每个处理区域。

3. 发明申请

US20140076236A1 METHOD AND SYSTEM FOR SUPPLYING A CLEANING GAS INTO A PROCESS CHAMBER 有权
标题翻译：将清洁气体供应到过程室的方法和系统
公开(公告)号：US20140076236A1
公开(公告)日：2014-03-20
申请号：US14087671
申请日：2013-11-22
申请人： Applied Materials, Inc.
发明人： Ramprakash SANKARAKRISHNAN , Dale R. DU BOIS , Ganesh BALASUBRAMANIAN , Karthik JANAKIRAMAN , Juan Carlos ROCHA-ALVAREZ , Thomas NOWAK , Visweswaren SIVARAMAKRISHNAN , Hichem M'SAAD
IPC分类号： C23C16/44 , F16K31/06
CPC分类号： F16K31/0655 , B08B5/00 , B08B7/0021 , C23C16/4405 , C23C16/4409 , C23C16/45561 , F16K1/221 , F16K1/224 , F16K31/06 , F16K31/088 , Y10S438/905
摘要： A method and apparatus for cleaning a process chamber are provided. In one embodiment, a process chamber is provided that includes a remote plasma source and a process chamber having at least two processing regions. Each processing region includes a substrate support assembly disposed in the processing region, a gas distribution system configured to provide gas into the processing region above the substrate support assembly, and a gas passage configured to provide gas into the processing region below the substrate support assembly. A first gas conduit is configured to flow a cleaning agent from the remote plasma source through the gas distribution assembly in each processing region while a second gas conduit is configured to divert a portion of the cleaning agent from the first gas conduit to the gas passage of each processing region.
摘要翻译：提供了一种用于清洁处理室的方法和设备。在一个实施例中，提供了包括远程等离子体源和具有至少两个处理区域的处理室的处理室。每个处理区域包括设置在处理区域中的基板支撑组件，配置成将气体提供到基板支撑组件上方的处理区域中的气体分配系统，以及构造成将气体提供到基板支撑组件下方的处理区域中的气体通道。第一气体管道构造成使来自远程等离子体源的清洁剂通过每个处理区域中的气体分配组件流动，而第二气体管道构造成将一部分清洁剂从第一气体导管转移到第一气体导管的气体通道每个处理区域。

4. 发明授权

US08636882B2 Producing method of semiconductor device and substrate processing apparatus 有权
标题翻译：半导体器件和衬底处理设备的生产方法
公开(公告)号：US08636882B2
公开(公告)日：2014-01-28
申请号：US12404915
申请日：2009-03-16
申请人： Kenichi Suzaki , Jie Wang
发明人： Kenichi Suzaki , Jie Wang
IPC分类号： H05B3/60 , C23C16/46 , H05B6/10
CPC分类号： C23C16/463 , C23C16/4401 , C23C16/4408 , C23C16/4411 , Y10S414/136 , Y10S414/137 , Y10S414/139 , Y10S438/905
摘要： Disclosed is a producing method of a semiconductor device, comprising: loading a substrate into a reaction furnace; forming a film on the substrate in the reaction furnace; unloading the substrate from the reaction furnace after the film has been formed; and forcibly cooling an interior of the reaction furnace in a state where the substrate does not exist in the reaction furnace after the substrate has been unloaded.
摘要翻译：公开了一种半导体器件的制造方法，其特征在于，包括：将基板装载到反应炉内; 在反应炉中在基板上形成膜; 在形成膜之后从反应炉中卸载基板; 在基板卸载后，在反应炉内不存在基板的状态下强制地冷却反应炉的内部。

5. 发明申请

US20130087174A1 METHODS FOR IN-SITU CHAMBER CLEAN UTILIZED IN AN ETCHING PROCESSING CHAMBER 有权
标题翻译：在蚀刻加工室中使用的现场室清洁方法
公开(公告)号：US20130087174A1
公开(公告)日：2013-04-11
申请号：US13614365
申请日：2012-09-13
申请人： Noel Sun , Meihua Shen , Nicolas Gani , Chung Nang Liu , Radhika C. Mani
发明人： Noel Sun , Meihua Shen , Nicolas Gani , Chung Nang Liu , Radhika C. Mani
IPC分类号： B08B5/00
CPC分类号： B08B5/00 , B08B7/0035 , C23C16/4405 , H01J37/32449 , H01J37/32862 , Y10S438/905
摘要： Embodiments of the invention include methods for in-situ chamber dry cleaning a plasma processing chamber utilized for gate structure fabrication process in semiconductor devices. In one embodiment, a method for in-situ chamber dry clean includes supplying a first cleaning gas including at least a boron containing gas into a processing chamber in absence of a substrate disposed therein, supplying a second cleaning gas including at least a halogen containing gas into the processing chamber in absence of the substrate, and supplying a third cleaning gas including at least an oxygen containing gas into the processing chamber in absence of the substrate.
摘要翻译：本发明的实施例包括用于半导体器件中用于栅极结构制造工艺的等离子体处理室的原位室干洗的方法。在一个实施例中，一种用于原位室干洗的方法包括在不存在设置在其中的基板的情况下将包括至少含硼气体的第一清洁气体供应到处理室中，提供至少包含含卤素气体的第二清洁气体在没有基板的情况下进入处理室，并且在没有基板的情况下将至少包含含氧气体的第三清洁气体供应到处理室中。

6. 发明申请

US20120262433A1 ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD FOR MANUFACTURING THE SAME 失效
标题翻译：有机发光二极管显示器及其制造方法
公开(公告)号：US20120262433A1
公开(公告)日：2012-10-18
申请号：US13532316
申请日：2012-06-25
申请人： Kyu-Sik CHO , Byoung-Seong JEONG , Joon-Hoo CHOI , Jong-Moo HUH
发明人： Kyu-Sik CHO , Byoung-Seong JEONG , Joon-Hoo CHOI , Jong-Moo HUH
IPC分类号： G09G3/32
CPC分类号： H01L27/1251 , H01L27/1214 , H01L27/3262 , Y10S438/905 , Y10S438/906 , Y10S438/974
摘要： An organic light emitting device and a manufacturing method thereof, including a first signal line and a second signal line intersecting each other on an insulating substrate, a switching thin film transistor connected to the first signal line and the second signal line, a driving thin film transistor connected to the switching thin film transistor, and a light emitting diode (“LD”) connected to the driving thin film transistor. The driving thin film transistor includes a driving control electrode and a driving semiconductor overlapping the driving control electrode, crystallized silicon having a doped region and a non-doped region, a driving gate insulating layer disposed between the driving control electrode and the driving semiconductor, and a driving input electrode and a driving output electrode opposite to each other on the driving semiconductor, wherein the interface between the driving gate insulating layer and the driving semiconductor includes nitrogen gas.
摘要翻译：一种有机发光器件及其制造方法，包括在绝缘基板上彼此相交的第一信号线和第二信号线，连接到第一信号线和第二信号线的开关薄膜晶体管，驱动薄膜连接到开关薄膜晶体管的晶体管和连接到驱动薄膜晶体管的发光二极管（LD）。驱动薄膜晶体管包括驱动控制电极和与驱动控制电极重叠的驱动半导体，具有掺杂区域和非掺杂区域的结晶硅，设置在驱动控制电极和驱动半导体之间的驱动栅极绝缘层，以及在驱动半导体上相互相对的驱动输入电极和驱动输出电极，其中驱动栅极绝缘层和驱动半导体之间的界面包括氮气。

7. 发明授权

US08211238B2 System, method and apparatus for self-cleaning dry etch 有权
标题翻译：用于自清洁干蚀刻的系统，方法和设备
公开(公告)号：US08211238B2
公开(公告)日：2012-07-03
申请号：US11444942
申请日：2006-05-31
申请人： Andrew D. Bailey, III , Shrikant P. Lohokare , Arthur M. Howald , Yunsang Kim
发明人： Andrew D. Bailey, III , Shrikant P. Lohokare , Arthur M. Howald , Yunsang Kim
IPC分类号： C25F3/12 , B08B9/027
CPC分类号： B08B7/00 , B08B7/0035 , B08B7/0071 , H01J37/3244 , H01J37/32522 , H01J37/32862 , H01J2237/022 , H01L21/3065 , H01L21/32115 , H01L21/32136 , H01L21/67034 , H01L21/67051 , H01L21/67069 , H01L21/6708 , H01L21/7684 , Y10S438/905
摘要： A method for cleaning a processing chamber that includes heating an inner surface of the processing chamber to a first temperature. The first temperature can be sufficient to cause a first species to become volatile. The first species can be one of several species deposited on the inner surface. A cleaning chemistry is injected into the processing chamber. The cleaning chemistry can be reactive with a second one of the species to convert the second species to the first species. The volatilized first species can also be output from the processing chamber. A system for cleaning the process chamber is also described.
摘要翻译：一种用于清洁处理室的方法，包括将处理室的内表面加热至第一温度。第一个温度足以使第一个物质变得挥发。第一种可以是沉积在内表面上的几种物质之一。将清洁化学品注入到处理室中。清洁化学品可以与第二种物质反应以将第二种类转化为第一种。挥发的第一种也可以从处理室输出。还描述了用于清洁处理室的系统。

8. 发明授权

US08105440B2 Method of cleaning a CVD device 有权
标题翻译：清洗CVD装置的方法
公开(公告)号：US08105440B2
公开(公告)日：2012-01-31
申请号：US12118284
申请日：2008-05-09
申请人： Hiroshi Nogami
发明人： Hiroshi Nogami
IPC分类号： B08B7/04 , B08B7/00
CPC分类号： H01J37/32862 , C23C16/4405 , Y10S134/902 , Y10S438/905
摘要： A CVD vacuum vessel including an electrically conductive partition plate which divides the interior of the vacuum vessel into a plasma generating space and a film-deposition processing space, and an electrically conductive spiral shield. The electrically conductive partition plate has a plurality of through-holes connecting the plasma generating space to the film-deposition processing space and a heater for heating the electrically conductive partition plate. The partitioning plate is mounted to the vacuum vessel by means of a mounting screw such that electrical contact between the partitioning plate and the vacuum vessel is achieved through said spiral shield.
摘要翻译：一种CVD真空容器，其包括将真空容器的内部分成等离子体产生空间和膜沉积处理空间的导电隔板以及导电螺旋屏蔽。导电隔板具有将等离子体产生空间连接到成膜处理空间的多个通孔和用于加热导电隔板的加热器。分隔板通过安装螺钉安装到真空容器上，使得分隔板和真空容器之间的电接触通过所述螺旋屏蔽件实现。

9. 发明授权

US08053338B2 Plasma CVD apparatus 有权
标题翻译：等离子体CVD装置
公开(公告)号：US08053338B2
公开(公告)日：2011-11-08
申请号：US12417158
申请日：2009-04-02
申请人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
发明人： Shunpei Yamazaki , Toru Takayama , Mitsunori Sakama , Hisashi Abe , Hiroshi Uehara , Mika Ishiwata
IPC分类号： H01L21/31 , H01L21/469
CPC分类号： H01J37/32477 , C23C16/4401 , C23C16/5096 , Y10S438/905
摘要： In a plasma CVD apparatus, unnecessary discharge such as arc discharge is prevented, the amount of particles due to peeling of films attached to a reaction chamber is reduced, and the percentage of a time contributing to production in hours of operation of the apparatus is increased while enlargement of the apparatus and easy workability are maintained. The plasma CVD apparatus is configured such that in a conductive reaction chamber 104 with a power source 113, a vacuum exhausting means 118, and a reaction gas introduction pipe 114, plasma 115 is generated in a space surrounded by an electrode 111, a substrate holder 112, and an insulator 120.
摘要翻译：在等离子体CVD装置中，防止了不必要的放电，例如电弧放电，由于附着在反应室上的膜的剥离引起的颗粒的量减少，并且在该设备的工作时间内有助于生产的时间的百分比增加同时保持设备的扩大和易于加工的性能。等离子体CVD装置被构造成使得在具有电源113，真空排气装置118和反应气体引入管114的导电反应室104中，在由电极111围绕的空间中产生等离子体115，衬底保持器 112和绝缘体120。

10. 发明授权

US08034183B2 Cleaning method and plasma processing method 有权
标题翻译：清洗方法和等离子体处理方法
公开(公告)号：US08034183B2
公开(公告)日：2011-10-11
申请号：US11883523
申请日：2006-01-23
申请人： Shingo Furui , Takashi Kobayashi , Junichi Kitagawa
发明人： Shingo Furui , Takashi Kobayashi , Junichi Kitagawa
IPC分类号： B08B7/04 , B08B7/00
CPC分类号： H01J37/32862 , Y10S438/905
摘要： In a RLSA microwave plasma processing apparatus that radiates microwave from a microwave generator into a chamber by using a planer antenna (Radial Line Slot Antenna) having many slots formed according to a certain pattern, the chamber contaminated with Na or the like is cleaned by using a cleaning gas containing H2 and O2.
摘要翻译：在通过使用具有根据某种图案形成的许多槽的平面天线（径向线槽天线）将微波发生器的微波辐射到室中的RLSA微波等离子体处理装置中，用Na等污染的室被使用含有H2和O2的清洁气体。

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