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1. 发明申请

US20140110810A1 PHOTODIODE ARRAY 有权
公开(公告)号：US20140110810A1
公开(公告)日：2014-04-24
申请号：US13655907
申请日：2012-10-19
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Koei YAMAMOTO , Terumasa NAGANO , Kazuhisa YAMAMURA , Kenichi SATO , Ryutaro TSUCHIYA
IPC分类号： H01L31/0224
CPC分类号： H01L27/14643 , H01L27/1443 , H01L27/1446 , H01L27/14605 , H01L27/14607 , H01L27/14609 , H01L27/14636 , H01L28/24 , H01L31/02027 , H01L31/022416 , H01L31/022466 , H01L31/107
摘要： A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.

2. 发明申请

US20190051767A1 PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTRIC CONVERSION MODULE 审中-公开
公开(公告)号：US20190051767A1
公开(公告)日：2019-02-14
申请号：US16064165
申请日：2016-12-12
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Koei YAMAMOTO , Shigeyuki NAKAMURA , Terumasa NAGANO , Kenichi SATO
IPC分类号： H01L31/02 , H01L31/107 , G01T1/24 , H03K23/78 , H04N5/378
摘要： A photoelectric conversion element includes: a plurality of pixels that are formed on a common semiconductor substrate and each of which includes an avalanche photodiode; a first line that is formed on the semiconductor substrate, is electrically connected to two or more first pixels included in the plurality of pixels, and collectively extracts output currents from the two or more first pixels; and a second line that is formed on the semiconductor substrate, is electrically connected to two or more second pixels included in the plurality of pixels, and collectively extracts output currents from the two or more second pixels. A light receiving area of each first pixel is larger than a light receiving area of each second pixel.

3. 发明申请

US20180090535A1 DETECTOR, PET SYSTEM AND X-RAY CT SYSTEM 审中-公开
公开(公告)号：US20180090535A1
公开(公告)日：2018-03-29
申请号：US15782114
申请日：2017-10-12
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Yoshimaro FUJII , Terumasa NAGANO , Kazuhisa YAMAMURA , Kenichi SATO , Ryutaro TSUCHIYA
IPC分类号： H01L27/146 , H01L31/115 , H01L31/0224 , G01T1/29 , G01T1/24
CPC分类号： H01L27/14663 , G01N23/046 , G01T1/241 , G01T1/2985 , H01L27/14618 , H01L27/14634 , H01L27/14636 , H01L27/14661 , H01L31/022408 , H01L31/115 , H01L2224/13
摘要： Each semiconductor chip of a detector comprises a semiconductor substrate having a plurality of photodetector units, an insulating layer formed on a front face of the semiconductor substrate, a common electrode arranged on the insulating layer, a readout line for electrically connecting a quenching resistance of each photodetector unit and the common electrode to each other, and a through electrode extending from the common electrode to a rear face of the semiconductor substrate through a through hole of the semiconductor substrate.

4. 发明申请

US20180026145A1 LIGHT DETECTION DEVICE 审中-公开
公开(公告)号：US20180026145A1
公开(公告)日：2018-01-25
申请号：US15551099
申请日：2015-12-14
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Shogo KAMAKURA , Ryuta YAMADA , Kenichi SATO
IPC分类号： H01L31/02 , G01J1/02 , H01L23/00 , H01L31/0203 , H01L31/0232 , H01L31/107 , G01J1/44 , H01L27/144
CPC分类号： H01L31/02005 , G01J1/02 , G01J1/44 , G01J2001/4466 , G01J2001/448 , H01L24/32 , H01L24/48 , H01L24/73 , H01L27/1446 , H01L31/02027 , H01L31/0203 , H01L31/02322 , H01L31/10 , H01L31/107 , H01L2224/05554 , H01L2224/32227 , H01L2224/48091 , H01L2224/48227 , H01L2224/73265 , H01L2924/10155 , H01L2924/12043 , H01L2924/30105 , H04N5/369 , H01L2924/00014
摘要： A semiconductor substrate includes a first region in which a plurality of pixels are disposed and a second region located inside the first region to be surrounded by the first region when viewed from a direction in which a principal surface and a principal surface oppose each other. A through-hole penetrating through the semiconductor substrate is formed in the second region of the semiconductor substrate. An electrode disposed on a side of the principal surface of the semiconductor substrate and electrically connected to the plurality of pixels and an electrode disposed on a side of a principal surface of a mount substrate are connected to each other via a bonding wire inserted through the through-hole.

5. 发明申请

US20160284760A1 PHOTODIODE ARRAY 审中-公开
公开(公告)号：US20160284760A1
公开(公告)日：2016-09-29
申请号：US15178861
申请日：2016-06-10
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Koei YAMAMOTO , Terumasa NAGANO , Kazuhisa YAMAMURA , Kenichi SATO , Ryutaro TSUCHIYA
IPC分类号： H01L27/146 , H01L27/144 , H01L31/0224
CPC分类号： H01L27/14643 , H01L27/1443 , H01L27/1446 , H01L27/14605 , H01L27/14607 , H01L27/14609 , H01L27/14636 , H01L28/24 , H01L31/02027 , H01L31/022416 , H01L31/022466 , H01L31/107
摘要： A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.

6. 发明申请

US20140117484A1 PHOTODIODE ARRAY 有权
标题翻译：光斑阵列
公开(公告)号：US20140117484A1
公开(公告)日：2014-05-01
申请号：US13710845
申请日：2012-12-11
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Koei YAMAMOTO , Terumasa NAGANO , Kazuhisa YAMAMURA , Kenichi SATO , Ryutaro TSUCHIYA
IPC分类号： H01L27/144
CPC分类号： H01L27/1446 , H01L31/107
摘要： Each light detecting unit includes a semiconductor region that outputs a carrier, and a surface electrode. In a photodiode array, a read wire is positioned between neighboring avalanche photodiodes. When a plane including a surface of the semiconductor region is set as a reference plane, a distance tb from the reference plane to the read wire is larger than a distance to from the reference plane to the surface electrode.
摘要翻译：每个光检测单元包括输出载体的半导体区域和表面电极。在光电二极管阵列中，读线被定位在相邻的雪崩光电二极管之间。当将包括半导体区域的表面的平面设定为基准面时，从基准面到读取线的距离tb大于从基准面到表面电极的距离。

7. 发明申请

US20180331134A1 PHOTODIODE ARRAY 审中-公开
公开(公告)号：US20180331134A1
公开(公告)日：2018-11-15
申请号：US16040709
申请日：2018-07-20
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Kazuhisa YAMAMURA , Kenichi SATO
IPC分类号： H01L27/144 , H01L27/146 , H01L31/107 , H01L27/14
CPC分类号： H01L27/1446 , H01L27/14 , H01L27/14603 , H01L27/14605 , H01L27/14636 , H01L31/107
摘要： A photodiode array 1 has a plurality of photodetector channels 10 which are farmed on an n-type substrate 2 having an n-type semiconductor layer 12, with a light to be detected being incident to the plurality of photodetector channels 10. The photodiode array 1 comprises: a p−-type semiconductor layer 13 formed on the n-type semiconductor layer 12 of the substrate 2; resistors 4 each of which is provided to each of the photodetector channels 10 and is connected to a signal conductor 3 at one end thereof; and an n-type separating part 20 formed between the plurality of photodetector channels 10. The p−-type semiconductor layer 13 fauns a pn junction at the interface between the substrate 2, and comprises a plurality of multiplication regions AM for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels. The separating part 20 is formed so that each of the multiplication regions AM of the p−-type semiconductor layer 13 corresponds to each of the photodetector channels 10.

8. 发明申请

US20140306314A1 PHOTODIODE ARRAY 有权
标题翻译：光斑阵列
公开(公告)号：US20140306314A1
公开(公告)日：2014-10-16
申请号：US14314616
申请日：2014-06-25
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Koei YAMAMOTO , Terumasa NAGANO , Kazuhisa YAMAMURA , Kenichi SATO , Ryutaro TSUCHIYA
IPC分类号： H01L27/146
CPC分类号： H01L27/14643 , H01L27/1443 , H01L27/1446 , H01L27/14605 , H01L27/14607 , H01L27/14609 , H01L27/14636 , H01L28/24 , H01L31/02027 , H01L31/022416 , H01L31/022466 , H01L31/107
摘要： A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.
摘要翻译：光接收区域包括多个光检测部分10.光检测部分10具有第二接触电极4A。第二接触电极4A配置在与第一接触电极3A重叠的位置，以与第一接触电极接触。此外，电阻层4B继续到第二接触电极4A。

9. 发明申请

US20160284744A1 PHOTODIODE ARRAY 审中-公开
标题翻译：光斑阵列
公开(公告)号：US20160284744A1
公开(公告)日：2016-09-29
申请号：US15179066
申请日：2016-06-10
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Koei YAMAMOTO , Terumasa NAGANO , Kazuhisa YAMAMURA , Kenichi SATO , Ryutaro TSUCHIYA
IPC分类号： H01L27/144 , H01L31/02 , H01L49/02 , H01L31/107
CPC分类号： H01L27/14643 , H01L27/1443 , H01L27/1446 , H01L27/14605 , H01L27/14607 , H01L27/14609 , H01L27/14636 , H01L28/24 , H01L31/02027 , H01L31/022416 , H01L31/022466 , H01L31/107
摘要： A light receiving region includes a plurality of light detecting sections 10. The light detecting sections 10 has a second contact electrode 4A. The second contact electrode 4A is arranged at a position overlapping a first contact electrode 3A, so as to contact the first contact electrode. Further, a resistive layer 4B is continued to the second contact electrode 4A.
摘要翻译：光接收区域包括多个光检测部分10.光检测部分10具有第二接触电极4A。第二接触电极4A配置在与第一接触电极3A重叠的位置，以与第一接触电极接触。此外，电阻层4B继续到第二接触电极4A。

10. 发明申请

US20170033137A1 PHOTODIODE ARRAY 审中-公开
标题翻译：光斑阵列
公开(公告)号：US20170033137A1
公开(公告)日：2017-02-02
申请号：US15293784
申请日：2016-10-14
申请人： HAMAMATSU PHOTONICS K.K.
发明人： Kazuhisa YAMAMURA , Kenichi SATO
IPC分类号： H01L27/144 , H01L31/107 , H01L27/146
CPC分类号： H01L27/1446 , H01L27/14 , H01L27/14603 , H01L27/14605 , H01L27/14636 , H01L31/107
摘要： A photodiode array has a plurality of photodetector channels formed on an n-type substrate having an n-type semiconductor layer, with a light to be detected being incident to the photodetector channels. The array comprises: a p−-type semiconductor layer on the n-type semiconductor layer of the substrate; resistors is provided to each of the photodetector channels and is connected to a signal conductor at one end thereof; and an n-type separating part between the plurality of photodetector channels. The p−-type semiconductor layer forms a pn junction at the interface between the substrate, and comprises a plurality of multiplication regions for avalanche multiplication of carriers produced by the incidence of the light to be detected so that each of the multiplication regions corresponds to each of the photodetector channels.
摘要翻译：光电二极管阵列具有形成在具有n型半导体层的n型衬底上的多个光电检测器通道，待检测的光入射到光电检测器通道。阵列包括：衬底的n型半导体层上的p型半导体层; 电阻器被提供到每个光电检测器通道并且在其一端连接到信号导体; 以及在所述多个光电检测器通道之间的n型分离部。 p型半导体层在衬底之间的界面处形成pn结，并且包括用于由待检测的光的入射产生的载流子的雪崩乘法的多个乘法区域，使得每个乘法区域对应于每个的光电检测器通道。

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