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1. 发明授权

US09449849B2 Method of manufacturing semiconductor device using meander-shaped heating element 有权
标题翻译：制造使用曲折形加热元件的半导体器件的方法
公开(公告)号：US09449849B2
公开(公告)日：2016-09-20
申请号：US14330028
申请日：2014-07-14
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Hitoshi Murata , Tetsuya Kosugi , Shinobu Sugiura
IPC分类号： H01L21/00 , H01L21/324 , H01L21/67
CPC分类号： H01L21/324 , H01L21/67109
摘要： Provided is a method of manufacturing a semiconductor device using a heating device capable of suppressing shearing of a holder due to thermal deformation of the heating element included in the heating device. The method includes: loading a substrate into a process chamber surrounded by a heating device including a heating element; and increasing temperature of the heating element including a mountain part and a valley part alternately connected in plurality to form a meander shape with both ends thereof being fixed to an insulating body installed at an outer circumference of the heating element wherein the heating element is fixed to the insulating body by a holding body disposed in a holding body receiving part installed at end of the valley part having a cutout part having a width larger than that of the valley part to heat the substrate in the process chamber.
摘要翻译：提供一种使用加热装置的半导体器件的制造方法，该加热装置能够抑制由于加热装置中包含的加热元件的热变形而导致的保持器的剪切。该方法包括：将基板装载到由包括加热元件的加热装置包围的处理室中; 并且加热元件的温度升高包括多个交替连接的山部和谷部，以形成曲折形状，其两端固定在安装在加热元件的外周的绝缘体上，其中加热元件固定到所述绝缘体由设置在所述谷部的端部处的保持体容纳部中的保持体，所述保持体接纳部具有宽度大于所述谷部的宽度的切口部，以对所述处理室中的基板进行加热。

2. 发明授权

US11198935B2 Heating part, substrate processing apparatus, and method of manufacturing semiconductor device 有权
公开(公告)号：US11198935B2
公开(公告)日：2021-12-14
申请号：US15272798
申请日：2016-09-22
申请人： HITACHI KOKUSAI ELECTRIC INC. , TOKYO TECHNOLOGICAL LABO CO., LTD.
发明人： Shinobu Sugiura , Yosuke Kuwata , Tomoyasu Miyashita , Atsushi Umekawa , Kazuhiro Kimura , Akihiko Hiratsuka , Kaoru Kataoka , Ryosuke Arai
IPC分类号： C23C16/44 , C23C16/455 , H01L21/67
摘要： A heating part of covering and heating a gas pipe includes: a thermal insulation portion disposed outside a heat generation body; an enclosure configured to enclose the thermal insulation portion and the heat generation body; a fastening part installed outside the enclose and configured to fasten one end portion and the other end portion of the enclosure in a state in which the one end portion and the other end portion of the enclosure adjoin each other; and a temperature sensing part disposed at the side of the gas pipe with respect to the enclosure at a position facing a surface of the gas pipe and formed in a plate shape with a major surface thereof oriented toward the gas pipe.

3. 发明申请

US20140322926A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 审中-公开
标题翻译：制造半导体器件的方法
公开(公告)号：US20140322926A1
公开(公告)日：2014-10-30
申请号：US14330028
申请日：2014-07-14
申请人： HITACHI KOKUSAI ELECTRIC INC.
发明人： Hitoshi Murata , Tetsuya Kosugi , Shinobu Sugiura
IPC分类号： H01L21/324
CPC分类号： H01L21/324 , H01L21/67109
摘要： Provided is a method of manufacturing a semiconductor device using a heating device capable of suppressing shearing of a holder due to thermal deformation of the heating element included in the heating device. The method includes: loading a substrate into a process chamber surrounded by a heating device including a heating element; and increasing temperature of the heating element including a mountain part and a valley part alternately connected in plurality to form a meander shape with both ends thereof being fixed to an insulating body installed at an outer circumference of the heating element wherein the heating element is fixed to the insulating body by a holding body disposed in a holding body receiving part installed at end of the valley part having a cutout part having a width larger than that of the valley part to heat the substrate in the process chamber.
摘要翻译：提供一种使用加热装置的半导体器件的制造方法，该加热装置能够抑制由于加热装置中包含的加热元件的热变形而导致的保持器的剪切。该方法包括：将基板装载到由包括加热元件的加热装置包围的处理室中; 并且加热元件的温度升高包括多个交替连接的山部和谷部，以形成曲折形状，其两端固定在安装在加热元件的外周的绝缘体上，其中加热元件固定到所述绝缘体由设置在所述谷部的端部处的保持体容纳部中的保持体，所述保持体接纳部具有宽度大于所述谷部的宽度的切口部，以对所述处理室中的基板进行加热。

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