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    • 3. 发明授权
    • Semiconductor structure and method for manufacturing the same
    • 半导体结构及其制造方法
    • US08889554B2
    • 2014-11-18
    • US13380486
    • 2011-04-18
    • Haizhou YinWei JiangZhijiong LuoHuilong Zhu
    • Haizhou YinWei JiangZhijiong LuoHuilong Zhu
    • H01L29/78H01L29/417H01L29/66
    • H01L29/41775H01L29/456H01L29/6653H01L29/66545H01L29/6656
    • The present invention provides a method for manufacturing a semiconductor structure, comprising: forming a first contact layer on an exposed active region of a first spacer; forming a second spacer at a region of the first contact layer close to a gate stack to partially cover the exposed active region; forming a second contact layer in the uncovered exposed active region, wherein when a diffusion coefficient of the first contact layer is the same as that of the second contact layer, the first contact layer has a thickness less than that of the second contact layer; and when the diffusion coefficient of the first contact layer is different from that of the second contact layer, the diffusion coefficient of the first contact layer is smaller than that of the second contact layer. Correspondingly, the present invention also provides a semiconductor structure. The present invention is beneficial to the suppression of the diffusion of corresponding compositions from the contact layers into the channel region, reduction of the short channel effects, and improvement of the reliability of the semiconductor structure.
    • 本发明提供一种制造半导体结构的方法,包括:在第一间隔物的暴露的有源区上形成第一接触层; 在所述第一接触层的靠近栅极堆叠的区域处形成第二间隔物以部分地覆盖所述暴露的有源区; 在未覆盖的暴露的有源区中形成第二接触层,其中当第一接触层的扩散系数与第二接触层的扩散系数相同时,第一接触层的厚度小于第二接触层的厚度; 并且当第一接触层的扩散系数与第二接触层的扩散系数不同时,第一接触层的扩散系数小于第二接触层的扩散系数。 相应地,本发明还提供一种半导体结构。 本发明有利于抑制相应组合物从接触层扩散到沟道区中,减少短沟道效应,提高半导体结构的可靠性。
    • 4. 发明申请
    • Semiconductor structure and method for manufacturing the same
    • 半导体结构及其制造方法
    • US20120319213A1
    • 2012-12-20
    • US13380486
    • 2011-04-18
    • Haizhou YinWei JiangZhijiong LuoHuilong Zhu
    • Haizhou YinWei JiangZhijiong LuoHuilong Zhu
    • H01L29/78H01L21/336
    • H01L29/41775H01L29/456H01L29/6653H01L29/66545H01L29/6656
    • The present invention provides a method for manufacturing a semiconductor structure, comprising: forming a first contact layer on an exposed active region of a first spacer; forming a second spacer at a region of the first contact layer close to a gate stack to partially cover the exposed active region; forming a second contact layer in the uncovered exposed active region, wherein when a diffusion coefficient of the first contact layer is the same as that of the second contact layer, the first contact layer has a thickness less than that of the second contact layer; and when the diffusion coefficient of the first contact layer is different from that of the second contact layer, the diffusion coefficient of the first contact layer is smaller than that of the second contact layer. Correspondingly, the present invention also provides a semiconductor structure. The present invention is beneficial to the suppression of the diffusion of corresponding compositions from the contact layers into the channel region, reduction of the short channel effects, and improvement of the reliability of the semiconductor structure.
    • 本发明提供一种制造半导体结构的方法,包括:在第一间隔物的暴露的有源区上形成第一接触层; 在所述第一接触层的靠近栅极堆叠的区域处形成第二间隔物以部分地覆盖所述暴露的有源区; 在未覆盖的暴露的有源区中形成第二接触层,其中当第一接触层的扩散系数与第二接触层的扩散系数相同时,第一接触层的厚度小于第二接触层的厚度; 并且当第一接触层的扩散系数与第二接触层的扩散系数不同时,第一接触层的扩散系数小于第二接触层的扩散系数。 相应地,本发明还提供一种半导体结构。 本发明有利于抑制相应组合物从接触层扩散到沟道区中,减少短沟道效应,提高半导体结构的可靠性。
    • 6. 发明授权
    • Enhancing MOSFET performance with corner stresses of STI
    • 通过STI拐角应力增强MOSFET性能
    • US09356025B2
    • 2016-05-31
    • US14348579
    • 2012-03-29
    • Huilong ZhuZhijiong LuoHaizhou Yin
    • Huilong ZhuZhijiong LuoHaizhou Yin
    • H01L27/092H01L29/78H01L21/8238H01L21/762H01L29/66
    • H01L27/092H01L21/76224H01L21/823807H01L21/823878H01L29/66575H01L29/7846
    • The present invention relates to enhancing MOSFET performance with the corner stresses of STI. A method of manufacturing a MOS device comprises the steps of: providing a semiconductor substrate; forming trenches on the semiconductor substrate and at least a pMOS region and at least an nMOS region surrounded by the trenches; filling the trenches with a dielectric material having a stress; removing at least the dielectric material having a stress in the trenches which is adjacent to a position where a channel is to be formed on each of the pMOS and nMOS regions so as to form exposed regions; filling the exposed regions with a insulating material; and forming pMOS and nMOS devices on the pMOS region and the nMOS region, respectively, wherein each of the pMOS and nMOS devices comprises a channel, a gate formed above the channel, and a source and a drain formed at both sides of the channel; wherein in a channel length direction, the boundary of each exposed region is substantially aligned with the boundary of the position of the channel, or the boundary of each exposed region extends along the channel length direction to be aligned with the boundary of corresponding pMOS or nMOS region.
    • 本发明涉及利用STI的拐角应力来增强MOSFET的性能。 一种制造MOS器件的方法包括以下步骤:提供半导体衬底; 在所述半导体衬底和至少一个pMOS区域和由所述沟槽包围的至少nMOS区域中形成沟槽; 用具有应力的介电材料填充沟槽; 至少去除在沟道中具有应力的介电材料,所述沟槽邻近要在pMOS和nMOS区域中的每一个上形成沟道的位置,以形成暴露区域; 用绝缘材料填充暴露的区域; 以及分别在pMOS区域和nMOS区域上形成pMOS和nMOS器件,其中pMOS和nMOS器件中的每一个包括沟道,形成在沟道上方的栅极以及形成在沟道两侧的源极和漏极; 其中在通道长度方向上,每个曝光区域的边界基本上与通道位置的边界对齐,或者每个曝光​​区域的边界沿着沟道长度方向延伸以与对应的pMOS或nMOS的边界对准 地区。
    • 7. 发明授权
    • Semiconductor device with a common back gate isolation region and method for manufacturing the same
    • 具有公共背栅隔离区的半导体器件及其制造方法
    • US09054221B2
    • 2015-06-09
    • US13510807
    • 2011-11-18
    • Huilong ZhuQingqing LiangZhijiong LuoHaizhou Yin
    • Huilong ZhuQingqing LiangZhijiong LuoHaizhou Yin
    • H01L27/088H01L21/336H01L21/84H01L27/12
    • H01L21/84H01L27/1203
    • The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises: an SOI wafer comprising a semiconductor substrate, a buried insulation layer, and a semiconductor layer, wherein the buried insulation layer is disposed on the semiconductor substrate, and the semiconductor layer is disposed on the buried insulation layer; a plurality of MOSFETs being formed adjacently to each other in the SOI wafer, wherein each of the MOSFETs comprises a respective backgate being formed in the semiconductor substrate; and a plurality of shallow trench isolations, each of which being formed between respective adjacent MOSFETs to isolate the respective adjacent MOSFETs from each other, wherein the respective adjacent MOSFETs share a common backgate isolation region under and in direct contact with the respective backgate in the semiconductor substrate, and a PNP junction or an NPN junction is formed by the common backgate isolation region and the respective backgate of the respective adjacent MOSFETs. According to the present disclosure, respective backgates of two adjacent MOSFETs are isolated from each other by the shallow trench isolation. Furthermore, the two adjacent MOSFETs are also isolated from each other by the PNP or NPN junction formed by the respective backgates of the two adjacent MOSFETs and the common backgate isolation. As a result, this device structure has a better insulation effect over the prior art MOSFET and it greatly reduces the possibility of breakthrough.
    • 本发明提供一种半导体器件及其制造方法。 半导体器件包括:SOI晶片,其包括半导体衬底,掩埋绝缘层和半导体层,其中所述掩埋绝缘层设置在所述半导体衬底上,并且所述半导体层设置在所述掩埋绝缘层上; 在SOI晶片中彼此相邻形成的多个MOSFET,其中每个MOSFET包括形成在半导体衬底中的相应后栅; 以及多个浅沟槽隔离,其中每一个均形成在各个相邻的MOSFET之间,以将各个相邻的MOSFET彼此隔离,其中相应的相邻MOSFET在半导体内部和相应的后栅极直接接触并与之直接接触。 衬底,并且PNP结或NPN结由公共背栅隔离区和相应的相邻MOSFET的相应背栅形成。 根据本公开,两个相邻MOSFET的相应背板通过浅沟槽隔离彼此隔离。 此外,两个相邻的MOSFET也通过由两个相邻MOSFET的相应后沿和公共背栅隔离形成的PNP或NPN结彼此隔离。 结果,该器件结构具有比现有技术的MOSFET更好的绝缘效果,并且大大降低了突破的可能性。
    • 9. 发明授权
    • MOSFET formed on an SOI wafer with a back gate
    • 在具有背栅的SOI晶片上形成MOSFET
    • US08952453B2
    • 2015-02-10
    • US13580053
    • 2011-11-18
    • Huilong ZhuQingqing LiangHaizhou YinZhijiong Luo
    • Huilong ZhuQingqing LiangHaizhou YinZhijiong Luo
    • H01L27/12H01L21/84H01L29/66H01L29/786
    • H01L21/84H01L27/1203H01L29/66545H01L29/78648
    • The present application discloses a MOSFET and a method for manufacturing the same. The MOSFET is formed on an SOI wafer, comprising: a shallow trench isolation for defining an active region in the semiconductor layer; a gate stack on the semiconductor layer; a source region and a drain region in the semiconductor layer on both sides of the gate stack; a channel region in the semiconductor layer and sandwiched by the source region and the drain region; a back gate in the semiconductor substrate; a first dummy gate stack overlapping with a boundary between the semiconductor layer and the shallow trench isolation; and a second dummy gate stack on the shallow trench isolation, wherein the MOSFET further comprises a plurality of conductive vias which are disposed between the gate stack and the first dummy gate stack and electrically connected to the source region and the drain region respectively, and between the first dummy gate stack and the second dummy gate stack and electrically connected to the back gate. The MOSFET avoids short circuit between the back gate and the source/drain regions by the dummy gate stacks.
    • 本申请公开了一种MOSFET及其制造方法。 MOSFET形成在SOI晶片上,包括:用于限定半导体层中的有源区的浅沟槽隔离; 半导体层上的栅极堆叠; 栅极堆叠的两侧的半导体层中的源极区域和漏极区域; 半导体层中的沟道区,被源极区和漏极区夹持; 半导体衬底中的背栅; 与半导体层和浅沟槽隔离之间的边界重叠的第一虚拟栅极堆叠; 以及在浅沟槽隔离上的第二虚拟栅极堆叠,其中所述MOSFET还包括多个导电通孔,所述多个导电通孔设置在所述栅极堆叠和所述第一伪栅极堆叠之间,并分别电连接到所述源极区域和所述漏极区域之间,以及 第一虚拟栅极堆叠和第二虚拟栅极堆叠并且电连接到背栅极。 MOSFET通过虚拟栅极堆叠避免了背栅极和源极/漏极区域之间的短路。
    • 10. 发明授权
    • Semiconductor structure and method for forming the same
    • 半导体结构及其形成方法
    • US08928089B2
    • 2015-01-06
    • US13201827
    • 2011-02-24
    • Huilong ZhuZhijiong LuoHaizhou Yin
    • Huilong ZhuZhijiong LuoHaizhou Yin
    • H01L21/70H01L21/8238H01L29/78
    • H01L21/823807H01L21/823864H01L29/7843
    • A semiconductor structure and a method for forming the same are provided. The structure comprises a semiconductor substrate (100) with an nMOSFET region (102) and a pMOSFET region (104) on it. An nMOSFET structure and a pMOSFET structure are formed in the nMOSFET region (102) and the pMOSFET region (104), respectively. The nMOSFET structure comprises a first channel region (182) formed in the nMOSFET region (102) and a first gate stack formed in the first channel region (182). The nMOSFET structure is covered with a compressive-stressed material layer (130) to apply a tensile stress to the first channel region (182). The pMOSFET structure comprises a second channel region (184) formed in the pMOSFET region (104) and a second gate stack formed in the second channel region (184). The pMOSFET structure is covered with a tensile-stressed material layer (140) to apply a compressive stress to the second channel region (184).
    • 提供半导体结构及其形成方法。 该结构包括其上具有nMOSFET区域(102)和pMOSFET区域(104)的半导体衬底(100)。 nMOSFET结构和pMOSFET结构分别形成在nMOSFET区域(102)和pMOSFET区域(104)中。 nMOSFET结构包括形成在nMOSFET区域(102)中的第一沟道区(182)和形成在第一沟道区(182)中的第一栅叠层。 nMOSFET结构用压应力材料层(130)覆盖,以向第一沟道区域(182)施加拉伸应力。 pMOSFET结构包括形成在pMOSFET区域(104)中的第二沟道区(184)和形成在第二沟道区(184)中的第二栅叠层。 pMOSFET结构被拉伸应力材料层(140)覆盖,以向第二通道区域(184)施加压缩应力。