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    • 10. 发明申请
    • SEMICONDUCTOR DEVICE
    • 半导体器件
    • US20100213442A1
    • 2010-08-26
    • US12159485
    • 2007-12-14
    • Hidehiro YoshidaHisao NagaiYoshiro Kitamura
    • Hidehiro YoshidaHisao NagaiYoshiro Kitamura
    • H01L51/10H01L51/52
    • H01L51/0003H01L51/0545
    • Provided is a semiconductor device comprising an organic semiconductor element A and an organic semiconductor element B, wherein the organic semiconductor element A has a source electrode and a drain electrode disposed on a surface of a substrate; a channel gap disconnecting the source electrode and the drain electrode; an organic semiconductor layer disposed on the source electrode, the drain electrode and the channel gap; an insulating film disposed on the organic semiconductor layer; a gate electrode disposed on the insulating film; a bank defining the organic semiconductor layer; a and groove through the bank, a distance between the apex of the bank and the surface of a substrate is greater than a distance between the apex of the channel gap and the surface of the substrate, and the organic semiconductor element B has a source electrode or a drain electrode connected with the gate electrode of the organic semiconductor element A via the groove through the bank of the organic semiconductor element A.
    • 提供一种包含有机半导体元件A和有机半导体元件B的半导体器件,其中有机半导体元件A具有设置在基板的表面上的源电极和漏电极; 沟道间隙切断源电极和漏电极; 设置在源电极,漏电极和沟道间隙上的有机半导体层; 设置在有机半导体层上的绝缘膜; 设置在所述绝缘膜上的栅电极; 限定有机半导体层的堤; a和沟槽穿过堤岸,堤岸的顶点和基底表面之间的距离大于沟道间隙的顶点与基底的表面之间的距离,有机半导体元件B具有源电极 或通过有机半导体元件A的堤经由沟槽与有机半导体元件A的栅电极连接的漏电极。