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1. 发明授权

US08941544B2 Vehicle roof mount antenna 有权
标题翻译：车顶安装天线
公开(公告)号：US08941544B2
公开(公告)日：2015-01-27
申请号：US12495112
申请日：2009-06-30
申请人： Hidekazu Kobayashi , Mitsuo Minakawa , Satoshi Oba , Makoto Hayashi , Toshiro Yokoyama
发明人： Hidekazu Kobayashi , Mitsuo Minakawa , Satoshi Oba , Makoto Hayashi , Toshiro Yokoyama
IPC分类号： H01Q1/32 , H01Q1/12
CPC分类号： H01Q1/1214 , H01Q1/3275
摘要： The vehicle roof mount antenna to be detachably mounted on a vehicle roof is mainly constituted by an antenna cover 1, an antenna base 2, a boss 3, a pad 4, an annular rib 5, and an annular groove portion 6. The pad 4 has a boss hole 7 through which the boss 3 penetrates and is disposed between the antenna base 2 and the vehicle roof R. The annular rib 5, which is made of an elastic material, is provided on the vehicle roof R side surface of the pad 4. When the vehicle roof mount antenna is fixed to the vehicle roof R, the annular rib 5 is inclined from the boss hole 7 toward a periphery of the pad 4. The annular groove portion 6 is provided at a position where the pressing force of the annular rib 5 against the vehicle roof R can be reduced.
摘要翻译：可拆卸地安装在车顶上的车顶安装天线主要由天线盖1，天线基座2，凸台3，焊盘4，环形肋5和环形槽部6构成。焊盘4 具有凸台孔7，凸台3穿过该凸台孔7设置在天线基座2和车顶R之间。由弹性材料制成的环形肋5设置在车顶R的衬垫侧面当车顶安装天线固定在车顶R上时，环形肋5从凸台孔7朝向垫4的周边倾斜。环形槽部6设置在可以减小抵靠车顶R的环形肋5。

2. 发明授权

US08922112B2 Light emitting device 有权
标题翻译：发光装置
公开(公告)号：US08922112B2
公开(公告)日：2014-12-30
申请号：US12186320
申请日：2008-08-05
申请人： Hidekazu Kobayashi , Koji Yasukawa
发明人： Hidekazu Kobayashi , Koji Yasukawa
IPC分类号： H01L33/00 , H01L51/52 , H01L51/50 , H01J63/04 , H01L27/32
CPC分类号： H01L51/5265 , H01L27/3213 , H01L51/5036 , H01L51/5048 , H01L2251/558
摘要： A light emitting element includes a reflective layer disposed in a substrate, a first electrode disposed through the reflective layer, a second electrode having translucent reflectivity, a plurality of organic material layers including a light emitting layer disposed between the first electrode and the second electrode, and a light emitting region defined by the first electrode, the second electrode, and the light emitting layer. A first organic material layer of the plurality of organic material layers has a first layer thickness in a first sub region within the light emitting region and has a second layer thickness, which is different from the first layer thickness, in a second sub region within the light emitting region.
摘要翻译：发光元件包括设置在基板中的反射层，穿过反射层设置的第一电极，具有半透明反射率的第二电极，包括设置在第一电极和第二电极之间的发光层的多个有机材料层，以及由第一电极，第二电极和发光层限定的发光区域。多个有机材料层的第一有机材料层在发光区域内的第一子区域中具有第一层厚度，并且在第二子区域内具有与第一层厚度不同的第二层厚度发光区域。

3. 发明授权

US08269492B2 Magnetic balance type current sensor 有权
标题翻译：磁平衡式电流传感器
公开(公告)号：US08269492B2
公开(公告)日：2012-09-18
申请号：US12891550
申请日：2010-09-27
申请人： Masamichi Saito , Akira Takahashi , Masahiro Iizuka , Tatsuya Kogure , Yosuke Ide , Yoshihiro Nishiyama , Kenji Ichinohe , Naoki Sakatsume , Tsuyoshi Nojima , Shigenobu Miyajima , Hidekazu Kobayashi
发明人： Masamichi Saito , Akira Takahashi , Masahiro Iizuka , Tatsuya Kogure , Yosuke Ide , Yoshihiro Nishiyama , Kenji Ichinohe , Naoki Sakatsume , Tsuyoshi Nojima , Shigenobu Miyajima , Hidekazu Kobayashi
IPC分类号： G01R33/09
CPC分类号： G01R15/205 , H01L43/08
摘要： A magnetic balance type current sensor measures a measured current which flows in a feedback coil when electrical conduction is provided by a voltage difference according to an induction magnetic field from the measured current and an equilibrium state is reached in which the induction magnetic field and a cancel magnetic field cancel each other. Sensor elements in a pair are arranged at positions with magnetic field from the measured current. The magnetization direction of the pinned magnetic layer in the magnetoresistive effect element of one sensor element is aligned in a forward direction with respect to the magnetic field formed by the measured current. The magnetization direction of the pinned magnetic layer in the magnetoresistive effect element of the other sensor element is aligned in a reverse direction with respect to the magnetic field formed by the measured current.
摘要翻译：磁平衡型电流传感器测量在通过根据来自测量电流的感应磁场的电压差提供电传导时在反馈线圈中流动的测量电流，并且达到平衡状态，其中感应磁场和取消磁场相互抵消。一对传感器元件被布置在具有来自测量电流的磁场的位置处。一个传感器元件的磁阻效应元件中的钉扎磁性层的磁化方向相对于由测量电流形成的磁场在正向方向上排列。另一传感器元件的磁阻效应元件中的钉扎磁性层的磁化方向相对于由测量电流形成的磁场的反方向排列。

4. 发明授权

US08040052B2 Light-emitting device, method for manufacturing the same, and electronic apparatus 有权
标题翻译：发光装置及其制造方法以及电子设备
公开(公告)号：US08040052B2
公开(公告)日：2011-10-18
申请号：US12018510
申请日：2008-01-23
申请人： Hidekazu Kobayashi
发明人： Hidekazu Kobayashi
IPC分类号： H01L51/00
CPC分类号： H01L27/3213 , H01L27/322 , H01L51/5265
摘要： A light-emitting device includes a plurality of pixels constituting a screen, each of the plurality of pixels including four subpixels, which are a red subpixel, a green subpixel, a blue subpixel, and a white subpixel. The red subpixel has a light-emitting layer formed of a red-light-emitting material that emits red light and extending along the screen, and a color filter provided above the light-emitting layer to transmit red light. The green subpixel has a light-emitting layer formed of a white-light-emitting material that emits white light and extending along the screen, and a color filter provided above the light-emitting layer to transmit green light. The blue subpixel has a light-emitting layer formed of a blue-light-emitting material that emits blue light and extending along the screen, and a color filter provided above the light-emitting layer to transmit blue light. The white subpixel has a light-emitting layer formed of the white-light-emitting material and extending along the screen.
摘要翻译：发光装置包括构成屏幕的多个像素，所述多个像素中的每一个包括作为红色子像素，绿色子像素，蓝色子像素和白色子像素的四个子像素。红色子像素具有由发射红色光并沿着屏幕延伸的红色发光材料形成的发光层，以及设置在发光层上方的透射红色光的滤色器。绿色子像素具有由白色发光材料形成的发光层，其发出白色光并沿着屏幕延伸;以及滤色器，设置在发光层上方以透射绿色光。蓝色子像素具有由发射蓝色光并沿着屏幕延伸的蓝色发光材料形成的发光层，以及设置在发光层上方以透射蓝色光的滤色器。白色子像素具有由白色发光材料形成并沿着屏幕延伸的发光层。

5. 发明授权

US08009391B2 Magnetic sensing element and method for manufacturing the same 有权
标题翻译：磁传感元件及其制造方法
公开(公告)号：US08009391B2
公开(公告)日：2011-08-30
申请号：US12120887
申请日：2008-05-15
申请人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
发明人： Kenichi Tanaka , Eiji Umetsu , Kazuaki Ikarashi , Kota Asatsuma , Norimasa Okanishi , Yoshihiro Nishiyama , Masamichi Saito , Yosuke Ide , Kazumasa Nishimura , Ryo Nakabayashi , Hidekazu Kobayashi , Akio Hanada , Naoya Hasegawa
IPC分类号： G11B5/33
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , B82Y40/00 , G11B5/3906 , G11B5/3909 , H01F10/30 , H01F10/3254 , H01F10/3277 , H01F41/302 , H01L43/08 , H01L43/12
摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.
摘要翻译：下层由作为非晶磁性材料的Co-Fe-B组成。因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。因此，PW50（半幅度脉冲宽度）和SN比可以比以前更多地改善，而不会导致电阻变化率（＆Dgr; R / R）等的降低，从而实现适于提高记录密度的结构。

6. 发明授权

US07969690B2 Tunneling magnetoresistive element which includes Mg-O barrier layer and in which nonmagnetic metal sublayer is disposed in one of magnetic layers 有权
标题翻译：隧道磁阻元件，其包括Mg-O阻挡层，其中非磁性金属子层设置在磁性层之一中
公开(公告)号：US07969690B2
公开(公告)日：2011-06-28
申请号：US12042585
申请日：2008-03-05
申请人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
发明人： Kazumasa Nishimura , Masamichi Saito , Yosuke Ide , Ryo Nakabayashi , Yoshihiro Nishiyama , Hidekazu Kobayashi , Naoya Hasegawa
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3929 , H01L43/08
摘要： In a tunneling magnetoresistive element, an insulating barrier layer is made of Mg—O, and a first pinned magnetic layer has a laminated structure in which a nonmagnetic metal sublayer made of Ta is interposed between a lower ferromagnetic sublayer and an upper ferromagnetic sublayer. The nonmagnetic metal sublayer has an average thickness of about 1 Å or more and about 5 Å or less.
摘要翻译：在隧道磁阻元件中，绝缘阻挡层由Mg-O制成，并且第一被钉扎磁性层具有其中由Ta制成的非磁性金属子层介于下铁磁层和上铁磁层之间的层叠结构。非磁性金属子层的平均厚度为约1埃以上且约5以下。

7. 发明授权

US07868528B2 Light emitting device with translucent semi-reflection layer and electronic apparatus 有权
标题翻译：具有半透明半反射层和电子设备的发光器件
公开(公告)号：US07868528B2
公开(公告)日：2011-01-11
申请号：US12212175
申请日：2008-09-17
申请人： Hidekazu Kobayashi
发明人： Hidekazu Kobayashi
IPC分类号： H01J5/16 , H01J61/40 , H01K1/26 , H01K1/30
CPC分类号： H01L51/5281
摘要： A light emitting device includes: a light emitting element which includes a first electrode layer, a second electrode layer, and a light emitting function layer disposed between the first electrode and the second electrode; a reflection layer which reflects light emitted from the light emitting function layer toward the light emitting function layer; and a translucent semi-reflection layer which is disposed opposite the reflection layer with the light emitting function layer interposed therebetween to reflect some of the light emitted from the light emitting function layer toward the light emitting function layer and to transmit the remainder of the light, wherein the translucent semi-reflection layer has a refractive index of 1 or more.
摘要翻译：发光器件包括：发光元件，其包括第一电极层，第二电极层和设置在第一电极和第二电极之间的发光功能层; 反射层，其将从发光功能层发射的光朝向发光功能层反射; 以及透光性半反射层，其与反射层相对设置有发光功能层，以将发光功能层发射的一些光反射到发光功能层，并透射剩余的光，所述透光性半反射层的折射率为1以上。

8. 发明授权

US07643254B2 Tunnel-effect type magnetic sensor having free layer including non-magnetic metal layer 失效
标题翻译：具有包含非磁性金属层的自由层的隧道效应型磁传感器
公开(公告)号：US07643254B2
公开(公告)日：2010-01-05
申请号：US11671819
申请日：2007-02-06
申请人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
发明人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11C11/16 , H01F10/3295
摘要： A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 Å. Accordingly, a high resistance change rate (ΔR/R) can be obtained.
摘要翻译：隧道效应型磁传感器的自由磁性层形成在由Mg-O制成的绝缘阻挡层上，自由磁性层包括增强层，第一软磁层，非磁性金属层和第二软磁层，从底部依次层叠。例如，增强层由Co-Fe形成，第一和第二软磁性层由Ni-Fe形成，非磁性金属层由Ta形成。第一软磁性层的平均厚度形成在5〜60的范围内。因此，可以获得高电阻变化率（DeltaR / R）。

9. 发明授权

US07443096B2 Organic electroluminescent device, method of manufacturing the same, and electronic apparatus 失效
标题翻译：有机电致发光器件及其制造方法以及电子设备
公开(公告)号：US07443096B2
公开(公告)日：2008-10-28
申请号：US11026068
申请日：2005-01-03
申请人： Hidekazu Kobayashi
发明人： Hidekazu Kobayashi
IPC分类号： H01L21/00 , H01J63/04 , H01J1/62 , H01J9/00
CPC分类号： H01L27/3276 , H01L27/3246 , H01L27/3293
摘要： An organic electroluminescent (EL) device reduces or suppresses display irregularities and enhances or improves display characteristics, when a large-sized organic EL device is formed by bonding small EL substrates to a large-sized substrate. Exemplary embodiments include a method of manufacturing an electronic apparatus including the organic EL device. The organic EL device has organic EL elements R, G and B, each having electrodes opposite to each other, a functional layer between the electrodes, a light emitting layer; and driving elements to drive the organic EL elements. Small substrates on each of which the organic EL elements R, G, and B and driving elements are formed are connected in a surface direction, such that a large-sized substrate is formed. At least one type of wiring lines for respective driving elements formed on the small EL substrates; and corresponding wiring lines in connected small EL substrates are electrically connected by a conductive material.
摘要翻译：有机电致发光（EL）器件通过将小型EL衬底接合到大尺寸衬底而形成大尺寸有机EL器件时，可减少或抑制显示不规则并提高或改善显示特性。示例性实施例包括制造包括有机EL器件的电子设备的方法。有机EL器件具有各自具有彼此相对的电极的有机EL元件R，G和B，电极之间的功能层，发光层; 和驱动元件来驱动有机EL元件。其中形成有机EL元件R，G和B以及驱动元件的小基板沿表面方向连接，从而形成大尺寸的基板。用于形成在小EL基板上的各个驱动元件的至少一种类型的布线; 并且连接的小EL基板中的相应布线通过导电材料电连接。

10. 发明申请

US20080158739A1 TUNNEL-EFFECT TYPE MAGNETIC SENSOR HAVING FREE LAYER INCLUDING NON-MAGNETIC METAL LAYER 失效
标题翻译：具有无磁层的隧道效应型磁传感器，包括非磁性金属层
公开(公告)号：US20080158739A1
公开(公告)日：2008-07-03
申请号：US11671819
申请日：2007-02-06
申请人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
发明人： Yosuke Ide , Naoya Hasegawa , Masamichi Saito , Ryo Nakabayashi , Yoshihiro Nishiyama , Kazumasa Nishimura , Hidekazu Kobayashi
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/093 , G01R33/098 , G11B5/3906 , G11C11/16 , H01F10/3295
摘要： A free magnetic layer of a tunnel-effect type magnetic sensor is formed on an insulating barrier layer made of Mg—O, and the free magnetic layer includes an enhancement layer, a first soft magnetic layer, a non-magnetic metal layer, and a second soft magnetic layer, which are laminated in that order from the bottom. For example, the enhancement layer is formed of Co—Fe, the first and the second soft magnetic layers are formed of Ni—Fe, and the non-magnetic metal layer is formed of Ta. The average thickness of the first soft magnetic layer is formed in the range of 5 to 60 Å. Accordingly, a high resistance change rate (ΔR/R) can be obtained.
摘要翻译：隧道效应型磁传感器的自由磁性层形成在由Mg-O制成的绝缘阻挡层上，自由磁性层包括增强层，第一软磁层，非磁性金属层和第二软磁层，从底部依次层叠。例如，增强层由Co-Fe形成，第一和第二软磁性层由Ni-Fe形成，非磁性金属层由Ta形成。第一软磁性层的平均厚度形成在5〜60的范围内。因此，可以获得高电阻变化率（DeltaR / R）。

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