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1. 发明授权

US08030223B2 Solar cell and method of fabricating the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US08030223B2
公开(公告)日：2011-10-04
申请号：US12656360
申请日：2010-01-27
申请人： Masatoshi Takahashi , Hiroyuki Ohtsuka , Hideki Matsumura , Atsushi Masuda , Akira Izumi
发明人： Masatoshi Takahashi , Hiroyuki Ohtsuka , Hideki Matsumura , Atsushi Masuda , Akira Izumi
IPC分类号： H01L21/318 , H01L21/471
CPC分类号： H01L31/0682 , H01L31/02167 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.
摘要翻译：一种太阳能电池（100），包括半导体太阳能电池基板（66），所述半导体太阳能电池基板具有形成在所述第一主表面上的受光面，并且基于照射到所述受光面的光产生光伏发电，其中，所述半导体太阳能电池基板（66）涂覆有由主要由硅构成的阳离子成分的无机绝缘材料构成的受光面侧绝缘膜（61），受光面侧绝缘膜（61）为低含氢无机绝缘体含有小于10atm％的氢的膜。因此，可以提供具有显示优异的钝化作用的绝缘膜的太阳能电池。

2. 发明申请

US20100173447A1 Solar cell and method of fabricating the same 有权
标题翻译：太阳能电池及其制造方法
公开(公告)号：US20100173447A1
公开(公告)日：2010-07-08
申请号：US12656360
申请日：2010-01-27
申请人： Masatoshi Takahashi , Hiroyuki Ohtsuka , Hideki Matsumura , Atsushi Masuda , Akira Izumi
发明人： Masatoshi Takahashi , Hiroyuki Ohtsuka , Hideki Matsumura , Atsushi Masuda , Akira Izumi
IPC分类号： H01L31/18
CPC分类号： H01L31/0682 , H01L31/02167 , H01L31/068 , H01L31/1804 , H01L31/1868 , Y02E10/547 , Y02P70/521
摘要： A solar cell (100) comprising a semiconductor solar cell substrate (66) having a light receiving surface formed on the first major surface and generating photovoltaic power based on the light impinging on the light receiving surface, wherein the light receiving surface of the semiconductor solar cell substrate (66) is coated with a light receiving surface side insulating film (61) composed of an inorganic insulating material where the cationic component principally comprising silicon, and the light receiving surface side insulating film (61) is a low hydrogen content inorganic insulating film containing less than 10 atm % of hydrogen. A solar cell having an insulating film exhibiting excellent passivation effect insusceptible to aging can thereby be provided.
摘要翻译：一种太阳能电池（100），包括半导体太阳能电池基板（66），所述半导体太阳能电池基板具有形成在所述第一主表面上的受光面，并且基于照射到所述受光面的光产生光伏发电，其中，所述半导体太阳能电池基板（66）涂覆有由主要由硅构成的阳离子成分的无机绝缘材料构成的受光面侧绝缘膜（61），受光面侧绝缘膜（61）为低含氢无机绝缘体含有小于10atm％的氢的膜。因此，可以提供具有显示优异的钝化作用的绝缘膜的太阳能电池。

3. 发明申请

US20070062648A1 Electrostatic chuck, thin film manufacturing apparatus having the same, thin film manufacturing method, and substrate surface treatment method 审中-公开
标题翻译：静电吸盘，具有该静电吸盘的薄膜制造装置，薄膜制造方法和基板表面处理方法
公开(公告)号：US20070062648A1
公开(公告)日：2007-03-22
申请号：US11515650
申请日：2006-09-05
申请人： Shigeru Senbonmatsu , Shuhei Yamamoto , Mitsuru Suginoya , Hideki Matsumura , Atsushi Masuda
发明人： Shigeru Senbonmatsu , Shuhei Yamamoto , Mitsuru Suginoya , Hideki Matsumura , Atsushi Masuda
IPC分类号： H01L21/306 , H05H1/24 , C23C16/00
CPC分类号： C23C16/4586 , C23C16/44 , C23C16/4581 , H01L21/6833
摘要： A difficulty has been given, that is, in a condition that an electrostatic chuck having an oxide layer as a dielectric layer is set in catalytic chemical vapor deposition apparatus, as a silicon thin film is repeatedly deposited on a workpiece held by the electrostatic chuck, adsorbing power of the electrostatic chuck is gradually decreased, and finally the chuck does not adsorb a substrate at all. Thus, a dielectric layer on a surface of the electrostatic chuck is covered with an insulating film containing silicon nitride or silicon oxide. Thus, since damage to a chuck surface can be prevented, the damage being due to hydrogen radicals generated during depositing the silicon film by the catalytic chemical vapor deposition apparatus, even if the silicon film is repeatedly deposited, power for adsorbing the substrate is not decreased, and consequently substrate temperature is stabilized during depositing the silicon film.
摘要翻译：也就是说，在催化化学气相沉积装置中设置具有氧化物层作为电介质层的静电卡盘的情况下，由于将硅薄膜重复地沉积在由静电卡盘保持的工件上，静电卡盘的吸附力逐渐降低，最后卡盘根本不吸附基板。因此，静电卡盘的表面上的电介质层被含有氮化硅或氧化硅的绝缘膜覆盖。因此，由于可以防止对卡盘表面的损伤，所以即使重复沉积硅膜，由于通过催化化学气相沉积装置沉积硅膜而产生的氢自由基造成的损伤也不会降低，因此在沉积硅膜期间衬底温度稳定。

4. 发明授权

US06703254B2 Method for manufacturing semiconductor laser device 有权
标题翻译：制造半导体激光器件的方法
公开(公告)号：US06703254B2
公开(公告)日：2004-03-09
申请号：US10111280
申请日：2002-04-22
申请人： Kimihiko Saitoh , Akira Izumi , Hideki Matsumura
发明人： Kimihiko Saitoh , Akira Izumi , Hideki Matsumura
IPC分类号： H01L2100
CPC分类号： H01S5/028 , H01S5/0202 , H01S5/0282
摘要： A semiconductor thin film including a well layer is laminated on a semiconductor substrate, the semiconductor substrate and the semiconductor thin film is cleaved, and a cleavage plane of the semiconductor substrate and the semiconductor thin film, which is obtained by the cleaving, is exposed to an atmosphere produced by decomposition of a gas containing N-atoms under the presence of a heated catalytic substance, thereby a surface layer of the cleavage plane is removed and a nitride layer is formed on the surface. Subsequently, a dielectric film is formed on the cleavage plane. According to the above technique, a natural oxide film formed on the cleavage plane can be removed and also a protective film can be formed by using a catalytic CVD apparatus.
摘要翻译：包含阱层的半导体薄膜层叠在半导体衬底上，半导体衬底和半导体薄膜被切割，并且通过劈裂获得的半导体衬底和半导体薄膜的解理面暴露于在加热的催化物质的存在下，通过分解含有N-原子的气体产生的气氛，从而去除了解理面的表面层，并且在表面上形成氮化物层。随后，在解理面上形成电介质膜。根据上述技术，可以去除在解理面上形成的天然氧化物膜，并且也可以使用催化CVD装置形成保护膜。

5. 发明申请

US20080121505A1 Switch apparatus 审中-公开
标题翻译：开关装置
公开(公告)号：US20080121505A1
公开(公告)日：2008-05-29
申请号：US11984497
申请日：2007-11-19
申请人： Isao Maeda , Hiroshi Kusama , Hideki Matsumura , Norikazu Yoshida , Fumitaka Hayase
发明人： Isao Maeda , Hiroshi Kusama , Hideki Matsumura , Norikazu Yoshida , Fumitaka Hayase
IPC分类号： H01H1/00
CPC分类号： H01H1/28 , B60Q1/1469 , H01H3/42 , H01H25/04 , H01H2001/265
摘要： In an arrangement of carrying out a switch operation of operating a driven mechanism by an operating member operated by a user and bringing and detaching contacts provided to movable contact pieces into contact with and from fixed contacts by deforming and recovering the movable contact by the operated driven mechanism, the contacts of the movable contact pieces are formed by carrying out mechanical working of projecting portions of the movable contact pieces.
摘要翻译：在通过由用户操作的操作构件进行操作从动机构的开关操作的布置中，并且通过由所操作的驱动器使可动触点变形和恢复来使提供给可动触头的触点与固定触点相接触和分离通过进行可动接点的突出部的机械加工，形成可动接触片的接点。

6. 发明申请

US20060055864A1 Pixel control element selection transfer method, pixel control device mounting device used for pixel control element selection transfer method, wiring formation method after pixel control element transfer, and planar display substrate 失效
标题翻译：像素控制元件选择传送方法，用于像素控制元件选择传输方法的像素控制装置安装装置，像素控制元件传送之后的布线形成方法以及平面显示基板
公开(公告)号：US20060055864A1
公开(公告)日：2006-03-16
申请号：US10535182
申请日：2003-11-19
申请人： Hideki Matsumura , Kenichiro Kida , Shigehira Minami
发明人： Hideki Matsumura , Kenichiro Kida , Shigehira Minami
IPC分类号： G02F1/13
CPC分类号： H01L27/14603 , G02F1/1362 , H01L27/12 , H01L27/3255 , H01L27/3276 , H01L51/5281 , H01L51/56
摘要： There is provided a method for selectively transferring pixel control devices onto a planar display substrate, which method enables prepared pixel control devices to be easily, reliably and inexpensively mounted without inducing any loss of pixel control devices. The pixel control devices (1) are formed in a large number at pitches (5, 6) obtained respectively by dividing pitches (105, 106) on the planar display substrate (100) by natural numbers. The pixel control devices corresponding to the number of the pitches (105, 106) on the planar display substrate (100) are picked up, retained on a transparent thermoplastic resin film (101) formed on the planar display substrate (100) utilizing the plastic deformation of the film and fixed at the peripheries thereof with a transparent ultraviolet curing resin film (104).
摘要翻译：提供了一种用于将像素控制装置选择性地转移到平面显示基板上的方法，该方法使准备好的像素控制装置能够容易，可靠且廉价地安装，而不会引起像素控制装置的任何损失。像素控制装置（1）通过以平面显示基板（100）上的间距（105,106）分割自然数而获得的间距（5,6）大量地形成。对应于平面显示基板（100）上的间距（105,106）的数量的像素控制装置被拾取，保持在形成在平面显示基板（100）上的透明热塑性树脂膜（101）上，利用塑料膜的变形并在其周围用透明紫外线固化树脂膜（104）固定。

7. 发明授权

US6069094A Method for depositing a thin film 失效
标题翻译：沉积薄膜的方法
公开(公告)号：US6069094A
公开(公告)日：2000-05-30
申请号：US924304
申请日：1997-09-05
申请人： Hideki Matsumura , Akira Izumi , Atsushi Masuda , Yasunobu Nashimoto , Yosuke Miyoshi , Shuji Nomura , Kazuo Sakurai , Shouichi Aoshima
发明人： Hideki Matsumura , Akira Izumi , Atsushi Masuda , Yasunobu Nashimoto , Yosuke Miyoshi , Shuji Nomura , Kazuo Sakurai , Shouichi Aoshima
IPC分类号： H01L21/205 , C23C16/02 , C23C16/44 , H01L21/28 , H01L21/31 , H01L21/314 , H01L21/316 , H01L21/318
CPC分类号： C23C16/44 , C23C16/0236 , H01L21/28264 , H01L21/3185
摘要： This invention discloses a method and apparatus where a pre-treatment which reduce interfacial level density is carried out before thin film deposition on a substrate utilizing a catalytic gas phase reaction. The catalytic gas phase reaction is generated with a treatment gas which is supplied with the substrate via a thermal catalysis body provided near the substrate surface. Thin film deposition on the substrate surface is carried out after this pre-treatment. The thermal catalysis body is made of tungsten, molybdenum, tantalum, titanium or vanadium, and is heated by a heater. And, this invention also discloses a semiconductor device having a semiconductor-insulator junction with its interfacial level density is 10.sup.12 eV .sup.-1 cm.sup.-2 or less, which is brought by the above pre-treatment in the insulator film deposition process.
摘要翻译：本发明公开了一种方法和装置，其中在使用催化气相反应的薄膜沉积在基板上之前进行降低界面密度的预处理。催化气相反应是通过设置在基板表面附近的热催化体被提供给基板的处理气体产生的。在该预处理之后进行在基板表面上的薄膜沉积。热催化体由钨，钼，钽，钛或钒制成，并被加热器加热。并且，本发明还公开了一种具有半导体 - 绝缘体结的半导体器件，其界面电平密度为1012eV -1cm-2或更小，这是通过上述绝缘膜沉积工艺中的预处理所带来的。

8. 发明授权

US5120971A Method for reflection-type two-dimensional pattern-reducing-copying using single convergence mirror and equipment thereof 失效
标题翻译：使用单一会聚反射镜的反射型二维图案缩小复印方法及其设备
公开(公告)号：US5120971A
公开(公告)日：1992-06-09
申请号：US636989
申请日：1990-12-26
申请人： Hideki Matsumura , Yoshihide Watanabe
发明人： Hideki Matsumura , Yoshihide Watanabe
IPC分类号： G03F7/20 , G21K7/00 , H01L21/027 , H01L21/30
CPC分类号： G03F7/70233 , G03F7/70283 , G03F7/70358 , G21K7/00
摘要： The invention relates to a method and a device for reflection-type pattern copying, characterized by letting beams of light be incident on a pattern reflection plate on which a pattern to be copied is drawn, converging a pattern figure contained in the light reflected by the pattern reflection plate by means of a concave mirror and copying a two-dimensionally reduced pattern of the above pattern onto a surface of a specimen. Unlike conventional methods, the invention achieves two-dimensional reduced pattern copying by using one concave convergence mirror. A region of copying in which the blur size is not larger than a certain sufficiently small value can be expanded by parallelly arrnaging many concave convergence mirrors having the same shape and combining mechanical sweeping of the pattern reflection plate and the specimen.
摘要翻译：本发明涉及一种用于反射型图案复印的方法和装置，其特征在于，使光束入射到其上绘制待复印图案的图案反射板上，使包含在由图案反射板，并将上述图案的二维缩小图案复制到样品的表面上。与传统方法不同，本发明通过使用一个凹面会聚镜实现二维缩小图案复制。可以通过平行布置具有相同形状的许多凹入会聚反射镜并结合图案反射板和样本的机械扫描来扩大其中模糊尺寸不大于一定的足够小的复印区域。

9. 发明授权

US4110314A Process for preparing an aromatic polymer in the presence of an inert nonpolar aromatic reaction lubricant 失效
标题翻译：在惰性非极性芳族反应润滑剂存在下制备芳族聚合物的方法
公开(公告)号：US4110314A
公开(公告)日：1978-08-29
申请号：US751479
申请日：1976-12-16
申请人： Norio Yagi , Hideki Matsumura , Tatsuhiro Aoyagi , Ikuji Kishi
发明人： Norio Yagi , Hideki Matsumura , Tatsuhiro Aoyagi , Ikuji Kishi
IPC分类号： C08G65/00 , C08G65/40 , C08G75/23
CPC分类号： C08G65/4012 , C08G65/4093 , C08G75/23 , C08L2205/05
摘要： An aromatic polymer is prepared by polymerizing a diphenolate compound, of a dialkali metal salt of a diphenol with a dihalodiphenyl compound, of a dihalogenobenzenoid compound having an electron withdrawing group in at least one of the positions ortho or para to each of the halogen atoms, at 200.degree. C. to 400.degree. C. in the presence of from 0.1 to 30% by weight of an inert nonpolar aromatic reaction lubricant.
摘要翻译：通过在每个卤素原子的邻位或对位中的至少一个位置聚合具有吸电子基团的二卤代苯类化合物的双酚化合物，二酚的二碱金属盐与二卤代二苯基化合物来制备芳族聚合物，在0.1至30重量％的惰性非极性芳香族反应润滑剂的存在下，在200℃至400℃下进行。

10. 发明申请

US20150330491A1 GEARED STEPLESS TRANSMISSION 审中-公开
标题翻译：齿轮传动
公开(公告)号：US20150330491A1
公开(公告)日：2015-11-19
申请号：US14759378
申请日：2014-01-05
申请人： Hideki MATSUMURA
发明人： Hideki Matsumura
IPC分类号： F16H37/08 , F16H61/66 , F16H3/42
CPC分类号： F16H37/084 , F16H3/093 , F16H3/423 , F16H3/66 , F16H61/66
摘要： A mechanical transmission having higher power transmission efficiency than existing mechanical transmissions is achieved and thus environmental load is reduced. A geared stepless transmission includes a geared continuously variable transmission including a spiral gear (Tg) and a second gear (Pg), driver configured to drive the spiral gear and second gear, brake configured to brake the spiral gear and second gear, switch configured to switch between the driver and brake. Thus, the geared stepless transmission can continuously change the speed using the gears.
摘要翻译：实现了比现有的机械变速器具有更高的动力传递效率的机械变速器，因此减小了环境负荷。齿轮传动的无级变速器包括齿轮式无级变速器，其包括螺旋齿轮（Tg）和第二齿轮（Pg），被配置为驱动螺旋齿轮和第二齿轮的驱动器，构造成制动螺旋齿轮和第二齿轮的制动器，在驾驶员和制动器之间切换。因此，齿轮级无级变速器可以使用齿轮连续地改变速度。

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