会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 6. 发明申请
    • VEHICLE HEATING SYSTEM
    • 车辆加热系统
    • US20100176110A1
    • 2010-07-15
    • US12664601
    • 2008-06-13
    • Hiroyuki OginoNoriyuki YonenoHideaki KonishiNaohito AsamiSatoshi Arima
    • Hiroyuki OginoNoriyuki YonenoHideaki KonishiNaohito AsamiSatoshi Arima
    • B60L1/02
    • B60H1/00271B60H1/00285B60H1/2218B60H1/2225B60H2001/2293B60N2/5685
    • When a seat heater and a planar electric heater on a surface of an interior member are used in parallel, the seat heater and the planar electric heater cannot be heated sufficiently due to a limitation on an electric capacity of a vehicle, and in particular, in a vehicle having good engine efficiency, heating of an interior of a passenger compartment by air conditioning utilizing hot air generated by heat expelled from an engine is not sufficient, whereby there sometimes occurs a situation where occupants feel cold. A heating device 2 is provided in a side door panel 1 of a vehicle and a seat heater is made to be heated mainly at an initial stage of heating after an occupant gets in the vehicle, whereas the heating device 2 is made to be heated after a predetermined period of time elapses, whereby the body of the occupant can be warmed quickly and efficiently without making the occupant feel cold physically.
    • 当内部构件的表面上使用座椅加热器和平面电加热器时,由于车辆的电容受到限制,座椅加热器和平面电加热器不能被充分加热,特别是在 具有良好的发动机效率的车辆,利用通过从发动机排出的热产生的热空气进行空调来加热乘客室的内部空气不足,由此有时会发生乘客感到冷的情况。 加热装置2设置在车辆的侧门板1中,并且座椅加热器主要在乘员进入车辆之后的加热初始阶段被加热,而加热装置2被加热后 经过了预定的时间段,从而可以快速高效地对乘员的身体进行加热,而不会使乘客感觉到身体感觉到冷。
    • 10. 发明授权
    • Semiconductor device having element isolating insulating film in contact
hole
    • 半导体器件在接触孔中具有元件隔离绝缘膜
    • US5703391A
    • 1997-12-30
    • US673183
    • 1996-06-27
    • Satoshi Arima
    • Satoshi Arima
    • H01L29/417H01L29/76H01L27/11H01L29/94
    • H01L29/41766H01L21/76895Y10S257/903
    • A semiconductor device is obtained which can suppress decrease in contact area between an interconnection layer and a semiconductor substrate. Further, a method of manufacturing a semiconductor device which can increase in contact resistance between first and second interconnection layers can be obtained. In the semiconductor device, upper surface of an element isolating insulating film is removed near a boundary point between the element isolating oxide film and the semiconductor substrate. Consequently, the surface of the semiconductor substrate is exposed where the element isolating insulating film has been removed. Since a conductive layer is formed to be in contact with the exposed semiconductor substrate, contact area between the conductive layer and the semiconductor substrate is increased. In the manufacturing method of the semiconductor device, foreign matters on the first interconnection layer derived from wet etching using hydrofluoric acid solution is removed by anisotropic dry etching, and thereafter a second interconnection layer is formed on the first interconnection layer.
    • 获得能够抑制互连层与半导体基板的接触面积减小的半导体装置。 此外,可以获得可以增加第一和第二互连层之间的接触电阻的半导体器件的制造方法。 在半导体器件中,在元件隔离氧化膜和半导体衬底之间的边界点附近去除元件隔离绝缘膜的上表面。 因此,在元件隔离绝缘膜被去除的地方露出半导体衬底的表面。 由于导电层形成为与暴露的半导体衬底接触,所以导电层和半导体衬底之间的接触面积增大。 在半导体装置的制造方法中,通过各向异性干蚀刻除去由使用氢氟酸溶液的湿蚀刻得到的第一互连层上的异物,之后在第一互连层上形成第二互连层。