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1. 发明申请

US20130291717A1 CO2 RECOVERY SYSTEM AND CO2 RECOVERY METHOD 有权
标题翻译：二氧化碳回收系统和二氧化碳回收方法
公开(公告)号：US20130291717A1
公开(公告)日：2013-11-07
申请号：US13938760
申请日：2013-07-10
申请人： Hiromitsu Nagayasu , Takashi Kamijo , Takahito Yonekawa , Hiroshi Tanaka , Shinya Kishimoto , Takuya Hirata , Tatsuya Tsujiuchi , Masaru Chiyomaru , Koji Nakayama , Masahiko Tatsumi , Yasuyuki Yagi , Kazuhiko Kaibara
发明人： Hiromitsu Nagayasu , Takashi Kamijo , Takahito Yonekawa , Hiroshi Tanaka , Shinya Kishimoto , Takuya Hirata , Tatsuya Tsujiuchi , Masaru Chiyomaru , Koji Nakayama , Masahiko Tatsumi , Yasuyuki Yagi , Kazuhiko Kaibara
IPC分类号： B01D53/14
CPC分类号： B01D53/1406 , B01D53/1418 , B01D53/1475 , B01D53/62 , B01D2252/204 , B01D2257/504 , Y02A50/2342 , Y02C10/04 , Y02C10/06
摘要： A CO2 recovery system includes an absorber 2 and a regenerator 3. The absorber 2 includes a CO2 absorbing section 21 and at least one water-washing section 22. The CO2 absorbing section 21 allows flue gas 101 to come into contact with a basic amine compound absorbent 103 so that the basic amine compound absorbent 103 absorbs CO2 in the flue gas 101. The at least one water-washing section 22 allows the decarbonated flue gas 101A in which the amount of CO2 has been reduced in the CO2 absorbing section 21 to come into contact with wash water 104A and 104B to reduce the amounts of the basic amine compounds entrained in the decarbonated flue gas 101A. The regenerator 3 releases the CO2 from the basic amine compound absorbent 103 containing CO2 absorbed therein.
摘要翻译： CO 2回收系统包括吸收器2和再生器3.吸收器2包括CO 2吸收部分21和至少一个水洗部分22.CO 2吸收部分21允许烟道气101与碱性胺化合物吸收剂103，使得碱性胺化合物吸收剂103吸收烟道气101中的CO 2。至少一个水洗部22允许在CO 2吸收部21中CO 2的量减少的脱碳烟道气101A来到与洗涤水104A和104B接触以减少夹带在脱碳烟气101A中的碱性胺化合物的量。再生器3从其中吸收有CO 2的碱性胺化合物吸收剂103释放CO 2。

2. 发明授权

US08506693B2 CO2 recovery system and CO2 recovery method 有权
标题翻译： CO2回收系统和CO2回收方法
公开(公告)号：US08506693B2
公开(公告)日：2013-08-13
申请号：US12900108
申请日：2010-10-07
申请人： Hiromitsu Nagayasu , Takashi Kamijo , Takahito Yonekawa , Hiroshi Tanaka , Shinya Kishimoto , Takuya Hirata , Tatsuya Tsujiuchi , Masaru Chiyomaru , Koji Nakayama , Masahiko Tatsumi , Yasuyuki Yagi , Kazuhiko Kaibara
发明人： Hiromitsu Nagayasu , Takashi Kamijo , Takahito Yonekawa , Hiroshi Tanaka , Shinya Kishimoto , Takuya Hirata , Tatsuya Tsujiuchi , Masaru Chiyomaru , Koji Nakayama , Masahiko Tatsumi , Yasuyuki Yagi , Kazuhiko Kaibara
IPC分类号： B01D53/14
CPC分类号： B01D53/1406 , B01D53/1418 , B01D53/1475 , B01D53/62 , B01D2252/204 , B01D2257/504 , Y02A50/2342 , Y02C10/04 , Y02C10/06
摘要： A CO2 recovery system includes an absorber 2 and a regenerator 3. The absorber 2 includes a CO2 absorbing section 21 and at least one water-washing section 22. The CO2 absorbing section 21 allows flue gas 101 to come into contact with a basic amine compound absorbent 103 so that the basic amine compound absorbent 103 absorbs CO2 in the flue gas 101. The at least one water-washing section 22 allows the decarbonated flue gas 101A in which the amount of CO2 has been reduced in the CO2 absorbing section 21 to come into contact with wash water 104A and 104B to reduce the amounts of the basic amine compounds entrained in the decarbonated flue gas 101A. The regenerator 3 releases the CO2 from the basic amine compound absorbent 103 containing CO2 absorbed therein.
摘要翻译： CO 2回收系统包括吸收器2和再生器3.吸收器2包括CO 2吸收部分21和至少一个水洗部分22.CO 2吸收部分21允许烟道气101与碱性胺化合物吸收剂103，使得碱性胺化合物吸收剂103吸收烟道气101中的CO 2。至少一个水洗部22允许在CO 2吸收部21中CO 2的量减少的脱碳烟道气101A来到与洗涤水104A和104B接触以减少夹带在脱碳烟气101A中的碱性胺化合物的量。再生器3从其中吸收有CO 2的碱性胺化合物吸收剂103释放CO 2。

3. 发明授权

US08398758B2 CO2 recovery system and CO2 recovery method 有权
标题翻译： CO2回收系统和CO2回收方法
公开(公告)号：US08398758B2
公开(公告)日：2013-03-19
申请号：US12901051
申请日：2010-10-08
申请人： Hiromitsu Nagayasu , Takashi Kamijo , Takahito Yonekawa , Hiroshi Tanaka , Shinya Kishimoto , Takuya Hirata , Tatsuya Tsujiuchi , Masaru Chiyomaru , Koji Nakayama , Masahiko Tatsumi , Yasuyuki Yagi , Kazuhiko Kaibara
发明人： Hiromitsu Nagayasu , Takashi Kamijo , Takahito Yonekawa , Hiroshi Tanaka , Shinya Kishimoto , Takuya Hirata , Tatsuya Tsujiuchi , Masaru Chiyomaru , Koji Nakayama , Masahiko Tatsumi , Yasuyuki Yagi , Kazuhiko Kaibara
IPC分类号： B01D53/18 , B01D53/62
CPC分类号： B01D53/1418 , B01D53/1475 , B01D53/62 , B01D2252/204 , B01D2257/504 , Y02A50/2342 , Y02C10/04 , Y02C10/06
摘要： A CO2 recovery system includes an absorber 2 and a regenerator 3. The absorber 2 includes a CO2 absorbing section 21 and a water-washing section 22. The CO2 absorbing section 21 allows flue gas i01 to come into contact with a basic amine compound absorbent 103 so that the basic amine compound absorbent 103 absorbs CO2 in the flue gas 101. The water-washing section 22 allows the decarbonated flue gas 101A in which the amount of CO2 has been reduced in the CO2 absorbing section 21 to come into contact with circulating wash water 104 and to be washed with the wash water 104 so that the amounts of the basic amine compounds entrained in the decarbonated flue gas 101A are reduced. The regenerator 3 releases CO2 from the basic amine compound absorbent 103 the CO2 absorbed therein.
摘要翻译： CO 2回收系统包括吸收器2和再生器3.吸收器2包括CO 2吸收部分21和水洗部分22.CO 2吸收部分21允许烟道气体i01与碱性胺化合物吸收剂103接触使得碱性胺化合物吸收剂103吸收烟道气101中的CO 2。水洗部22允许在CO 2吸收部21中CO 2的量减少的脱碳废气101A与循环洗涤物接触水104并用洗涤水104洗涤，使得夹带在脱碳酸烟道气101A中的碱性胺化合物的量减少。再生器3从碱性胺化合物吸收剂103中吸收其中吸收的CO释放二氧化碳。

4. 发明授权

US09238191B2 CO2 recovery system and CO2 recovery method 有权
公开(公告)号：US09238191B2
公开(公告)日：2016-01-19
申请号：US13938760
申请日：2013-07-10
申请人： Hiromitsu Nagayasu , Takashi Kamijo , Takahito Yonekawa , Hiroshi Tanaka , Shinya Kishimoto , Takuya Hirata , Tatsuya Tsujiuchi , Masaru Chiyomaru , Koji Nakayama , Masahiko Tatsumi , Yasuyuki Yagi , Kazuhiko Kaibara
发明人： Hiromitsu Nagayasu , Takashi Kamijo , Takahito Yonekawa , Hiroshi Tanaka , Shinya Kishimoto , Takuya Hirata , Tatsuya Tsujiuchi , Masaru Chiyomaru , Koji Nakayama , Masahiko Tatsumi , Yasuyuki Yagi , Kazuhiko Kaibara
IPC分类号： B01D53/14 , B01D53/62
CPC分类号： B01D53/1406 , B01D53/1418 , B01D53/1475 , B01D53/62 , B01D2252/204 , B01D2257/504 , Y02A50/2342 , Y02C10/04 , Y02C10/06
摘要： A CO2 recovery system includes an absorber 2 and a regenerator 3. The absorber 2 includes a CO2 absorbing section 21 and at least one water-washing section 22. The CO2 absorbing section 21 allows flue gas 101 to come into contact with a basic amine compound absorbent 103 so that the basic amine compound absorbent 103 absorbs CO2 in the flue gas 101. The at least one water-washing section 22 allows the decarbonated flue gas 101A in which the amount of CO2 has been reduced in the CO2 absorbing section 21 to come into contact with wash water 104A and 104B to reduce the amounts of the basic amine compounds entrained in the decarbonated flue gas 101A. The regenerator 3 releases the CO2 from the basic amine compound absorbent 103 containing CO2 absorbed therein.

5. 发明申请

US20110135550A1 CO2 RECOVERY SYSTEM AND CO2 RECOVERY METHOD 有权
标题翻译：二氧化碳回收系统和二氧化碳回收方法
公开(公告)号：US20110135550A1
公开(公告)日：2011-06-09
申请号：US12900108
申请日：2010-10-07
申请人： Hiromitsu Nagayasu , Takashi Kamijo , Takahito Yonekawa , Hiroshi Tanaka , Shinya Kishimoto , Takuya Hirata , Tatsuya Tsujiuchi , Masaru Chiyomaru , Koji Nakayama , Masahiko Tatsumi , Yasuyuki Yagi , Kazuhiko Kaibara
发明人： Hiromitsu Nagayasu , Takashi Kamijo , Takahito Yonekawa , Hiroshi Tanaka , Shinya Kishimoto , Takuya Hirata , Tatsuya Tsujiuchi , Masaru Chiyomaru , Koji Nakayama , Masahiko Tatsumi , Yasuyuki Yagi , Kazuhiko Kaibara
IPC分类号： B01D53/62 , B01J15/00
CPC分类号： B01D53/1406 , B01D53/1418 , B01D53/1475 , B01D53/62 , B01D2252/204 , B01D2257/504 , Y02A50/2342 , Y02C10/04 , Y02C10/06
摘要： [Object] To further reduce the concentrations of basic amine compounds remaining in decarbonated flue gas.[Means of Solution] A CO2 recovery system includes an absorber 2 and a regenerator 3. The absorber 2 includes a CO2 absorbing section 21 and at least one water-washing section 22. The CO2 absorbing section 21 allows flue gas 101 to come into contact with a basic amine compound absorbent 103 so that the basic amine compound absorbent 103 absorbs CO2 in the flue gas 101. The at least one water-washing section 22 allows the decarbonated flue gas 101A in which the amount of CO2 has been reduced in the CO2 absorbing section 21 to come into contact with wash water 104A and 104B to reduce the amounts of the basic amine compounds entrained in the decarbonated flue gas 101A. The regenerator 3 releases the CO2 from the basic amine compound absorbent 103 containing CO2 absorbed therein. This CO2 recovery system further includes an absorbent-treating section 23 disposed downstream of the at least one water-washing section 22 through which the decarbonated flue gas 101A flows. The absorbent-treating section 23 allows the decarbonated flue gas 101A to come into contact with circulating acidic water 105 to further reduce the amounts of the basic amine compounds entrained in the decarbonated flue gas 101A.
摘要翻译： [目的]进一步降低残留在脱碳烟气中的碱性胺化合物的浓度。 [解决方案] CO 2回收系统包括吸收器2和再生器3.吸收器2包括CO 2吸收部分21和至少一个水洗部分22.CO 2吸收部分21允许烟道气101接触碱性胺化合物吸收剂103使得碱性胺化合物吸收剂103吸收烟道气101中的CO 2。至少一个水洗部22允许其中CO 2的量在CO 2中减少的脱碳烟道气101A 吸收部分21与洗涤水104A和104B接触以减少夹带在脱碳烟气101A中的碱性胺化合物的量。再生器3从其中吸收有CO 2的碱性胺化合物吸收剂103释放CO 2。该CO 2回收系统还包括设置在至少一个水洗部分22的下游的吸收处理部分23，脱碳废气101A通过该处理部分流动。吸收处理部23使脱碳酸烟气101A与循环的酸性水105接触，进一步减少夹带在脱碳酸烟气101A中的碱性胺化合物的量。

6. 发明申请

US20140045680A1 METHOD FOR MANUFACTURING METALLIC GLASS NANOWIRE, METALLIC GLASS NANOWIRE MANUFACTURED THEREBY, AND CATALYST CONTAINING METALLIC GLASS NANOWIRE 有权
标题翻译：制造金属玻璃纳米管的方法，制造的金属玻璃纳米管和含有金属玻璃纳米管的催化剂
公开(公告)号：US20140045680A1
公开(公告)日：2014-02-13
申请号：US14112507
申请日：2012-04-17
申请人： Koji Nakayama , Yoshihiko Yokoyama
发明人： Koji Nakayama , Yoshihiko Yokoyama
IPC分类号： B01J27/185 , B01J23/755
CPC分类号： B01J27/1853 , B01J21/066 , B01J23/42 , B01J23/44 , B01J23/755 , B01J35/06 , B22F1/0025 , B22F9/002 , B22F9/082 , B22F2999/00 , B82Y30/00 , C22C1/002 , C22C1/03 , C22C1/0433 , C22C1/0458 , C22C1/0466 , C22C28/00 , C22C33/003 , C22C33/02 , C22C38/002 , C22C45/00 , C22C45/003 , C22C45/02 , C22C45/04 , C22C45/10 , B22F2202/03
摘要： Provided is a method for easily manufacturing large volumes of a metallic glass nanowire with an extremely small diameter. This metallic glass nanowire manufacturing method is characterized in that a melted metallic glass or a master alloy thereof is gas-atomized in a supercooled state.
摘要翻译：提供了容易制造大体积的具有极小直径的金属玻璃纳米线的方法。该金属玻璃纳米线的制造方法的特征在于，熔融金属玻璃或其母合金以过冷却状态进行气体雾化。

7. 发明授权

US08178949B2 Bipolar semiconductor device, method for producing the same, and method for controlling Zener voltage 失效
标题翻译：双极半导体器件及其制造方法以及用于控制齐纳电压的方法
公开(公告)号：US08178949B2
公开(公告)日：2012-05-15
申请号：US12525198
申请日：2008-01-31
申请人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Hidekazu Tsuchida
发明人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Hidekazu Tsuchida
IPC分类号： H01L21/331
CPC分类号： H01L29/866 , H01L29/06 , H01L29/0615 , H01L29/1608 , H01L29/36 , H01L29/66106 , H01L29/8613
摘要： Bipolar semiconductor devices have a Zener voltage controlled very precisely in a wide range of Zener voltages (for example, from 10 to 500 V). A bipolar semiconductor device has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, a silicon carbide conductive layer of a first conductivity type, a highly doped layer of a second conductivity type and a silicon carbide conductive layer of a second conductivity type which substrate and conductive layers are laminated in the order named.
摘要翻译：双极半导体器件在齐纳电压的宽范围（例如10至500V）内非常精确地控制齐纳电压。双极半导体器件具有台面结构，并且包括第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层，第二导电类型的高掺杂层和碳化硅导电层第二导电类型，其中基板和导电层按顺序层压。

8. 发明授权

US08154026B2 Silicon carbide bipolar semiconductor device 失效
标题翻译：碳化硅双极半导体器件
公开(公告)号：US08154026B2
公开(公告)日：2012-04-10
申请号：US12097019
申请日：2006-12-13
申请人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Toshiyuki Miyanagi , Hidekazu Tsuchida , Isaho Kamata , Tomonori Nakamura
发明人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Toshiyuki Miyanagi , Hidekazu Tsuchida , Isaho Kamata , Tomonori Nakamura
IPC分类号： H01L29/15
CPC分类号： H01L29/1604 , H01L21/0465 , H01L21/047 , H01L29/0615 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/8613
摘要： In a SiC bipolar semiconductor device with a mesa structure having a SiC drift layer of a first conductive type and a SiC carrier injection layer of a second conductive type that are SiC epitaxial layers grown from a surface of a SiC single crystal substrate, the formation of stacking faults and the expansion of the area thereof are prevented and thereby the increase in forward voltage is prevented. Further, a characteristic of withstand voltage in a reverse biasing is improved. An forward-operation degradation preventing layer is formed on a mesa wall or on a mesa wall and a mesa periphery to separate spatially the surface of the mesa wall from a pn-junction interface. In one embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide low resistance layer of a second conductive type that is equipotential during the application of a reverse voltage. In another embodiment, the forward-operation degradation preventing layer is composed of a silicon carbide conductive layer of a second conductive type, and a metal layer that is equipotential during the application of a reverse voltage is formed on a surface of the silicon carbide conductive layer. In still another embodiment, the forward-operation degradation preventing layer is composed of a high resistance amorphous layer.
摘要翻译：在具有由SiC单晶衬底的表面生长的SiC外延层的具有第一导电类型的SiC漂移层和第二导电类型的SiC载流子注入层的台阶结构的SiC双极型半导体器件中，形成防止堆垛层错及其面积的膨胀，从而防止正向电压的增加。此外，提高了反向偏置中的耐受电压的特性。在台面壁或台面壁和台面周边上形成正向操作降解防止层，以在空间上分离台面壁的表面与pn结界面。在一个实施例中，正向操作降解防止层由在施加反向电压期间具有等电位的第二导电类型的碳化硅低电阻层构成。在另一个实施方案中，正向操作降解防止层由第二导电类型的碳化硅导电层构成，并且在施加反向电压期间具有等电位的金属层形成在碳化硅导电层的表面上。在另一个实施方案中，正向操作降解防止层由高电阻非晶层组成。

9. 发明授权

US08093599B2 Silicon carbide Zener diode 失效
标题翻译：碳化硅齐纳二极管
公开(公告)号：US08093599B2
公开(公告)日：2012-01-10
申请号：US12597121
申请日：2008-04-25
申请人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Hidekazu Tsuchida
发明人： Ryosuke Ishii , Koji Nakayama , Yoshitaka Sugawara , Hidekazu Tsuchida
IPC分类号： H01L29/866
CPC分类号： H01L29/866 , H01L29/0615 , H01L29/1608 , H01L29/66106
摘要： A silicon carbide Zener diode is a bipolar semiconductor device that has a mesa structure and includes a silicon carbide single crystal substrate of a first conductivity type, formed thereon, a silicon carbide conductive layer of a first conductivity type, and a silicon carbide conductive layer of a second conductivity type formed on the silicon carbide conductive layer of a first conductivity type, wherein a depletion layer that is formed under reverse bias at a junction between the silicon carbide conductive layer of a first conductivity type and the silicon carbide conductive layer of a second conductivity type does not reach a mesa corner formed in the silicon carbide conductive layer of a first conductivity type.
摘要翻译：一种碳化硅齐纳二极管是具有台面结构的双极半导体器件，包括形成在其上的第一导电类型的碳化硅单晶衬底，第一导电类型的碳化硅导电层和碳化硅导电层形成在第一导电类型的碳化硅导电层上的第二导电类型，其中在第一导电类型的碳化硅导电层与第二导电类型的碳化硅导电层之间的接合处以反偏压形成的耗尽层导电类型不到达形成在第一导电类型的碳化硅导电层中的台面角。

10. 发明授权

US08079698B2 Inkjet recording apparatus 有权
标题翻译：喷墨记录装置
公开(公告)号：US08079698B2
公开(公告)日：2011-12-20
申请号：US11782725
申请日：2007-07-25
申请人： Koji Nakayama
发明人： Koji Nakayama
IPC分类号： B41J2/01
CPC分类号： B41J29/17 , B41J11/0015 , B41J11/007
摘要： There is disclosed an inkjet recording apparatus including a feeding device, a remover, and an inkjet head. The feeding device feeds a recording medium along a feed path passing through a removing area. A part of an opposingly-feeding surface extends opposed to the ink jet head and along the feed path, and the removing area is located under the opposingly-feeding surface and within the opposingly-feeding surface as seen in a vertical direction. The remover removes foreign matter from a surface of the recording medium during the recording medium is fed through the removing area by the feeding device. The inkjet head is disposed downstream of the remover with respect to a feeding direction in which the recording medium is fed. The inkjet head has an ink ejection surface in which a nozzle is open, and an ink droplet is ejected from the nozzle toward a recording surface of the recording medium while the recording medium is fed along at least a part of the opposingly-feeding surface.
摘要翻译：公开了一种喷墨记录装置，其包括进料装置，去除剂和喷墨头。馈送装置沿着通过去除区域的馈送路径馈送记录介质。反向进给表面的一部分与喷墨头相对并且沿着进给路径延伸，并且在垂直方向上看去除区域位于相对输送表面下方和相对进给表面内。在记录介质通过进给装置通过去除区域供给时，去除器从记录介质的表面去除异物。喷墨头相对于记录介质被供给的进给方向设置在去除器的下游。喷墨头具有其中喷嘴打开的喷墨表面，并且当记录介质沿着相对输送表面的至少一部分进给时，墨滴从喷嘴朝向记录介质的记录表面喷射。

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