会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 4. 发明申请
    • VIDEO PROCESSING METHOD, VIDEO DISPLAY DEVICE AND ITS TIMING CONTROLLER
    • 视频处理方法,视频显示设备及其时序控制器
    • US20090033650A1
    • 2009-02-05
    • US12181547
    • 2008-07-29
    • Hiroshi TAKEDA
    • Hiroshi TAKEDA
    • G09G5/00
    • G09G3/20G09G3/3611G09G2310/08
    • Video processing method, a video display device and its timing controller can support video signals having different types of resolutions from ones set in advance without a special circuit identifying the resolution. Timing controller of video display device generates a first horizontal reference signal (HRST_start) indicating start of an active period of a data enable signal and a second horizontal reference signal (HRST_end) indicating end of the active period from an input video signal. Next, timing controller generates control signals (HSP, STB, POL, VCK, and VOE) based on the number of clocks from the rise of the first and second horizontal reference signals (HRST_start and HRST_end) and on signal generation timing values (α, A to D) predetermined for each control signal supplied to drivers.
    • 视频处理方法,视频显示装置及其定时控制器可以支持具有不同类型的分辨率的视频信号,而不需要识别分辨率的特殊电路。 视频显示装置的定时控制器产生指示数据使能信号的有效期的开始的第一水平参考信号(HRST_start)和指示从输入视频信号结束有效期的第二水平参考信号(HRST_end)。 接下来,定时控制器基于来自第一和第二水平参考信号(HRST_start和HRST_end)的上升的时钟数以及信号产生定时值(α,...),产生控制信号(HSP,STB,POL,VCK和VOE) A至D)为提供给驱动器的每个控制信号预定。
    • 5. 发明申请
    • METHOD OF PRODUCING AERIAL PHOTOGRAPH DATA
    • 生产摄影数据的方法
    • US20080065349A1
    • 2008-03-13
    • US11530114
    • 2006-09-08
    • Yoshihiko MINAMIYukio AKAMATSUHiroshi TAKEDA
    • Yoshihiko MINAMIYukio AKAMATSUHiroshi TAKEDA
    • G01B11/14
    • G01C7/02G01C11/06G01C15/002
    • A method of producing aerial photograph data is provided which is capable of positively utilizing stored photograph data and an image of a desired object included in a photographed image. The method includes a step of determining a distance between a position of a virtual photographic principal point (virtual photographic principal point position) obtained by the use of spatial position information of a target point and spatial direction of a view vector and a position of an actual photographic principal point (actual photographic principal point position) of each of a plurality of aerial photographs to automatically select a specific aerial photograph, and a step of extracting, from the specific aerial photograph, a selected image having the target point arranged at a predetermined position therein.
    • 提供一种产生航空照片数据的方法,其能够积极地利用存储的照片数据和包含在拍摄图像中的期望对象的图像。 该方法包括以下步骤:确定通过使用目标点的空间位置信息和视图向量的空间方向获得的虚拟拍摄主体点(虚拟拍摄主体点位置)的位置与实际位置之间的距离 多个航空照片中的每一个的摄影主要点(实际拍摄主点位置),以自动选择特定的航空照片;以及从特定航空照片中提取具有布置在预定位置的目标点的所选图像的步骤 其中。
    • 9. 发明申请
    • SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF
    • 半导体器件及其制造方法
    • US20110147815A1
    • 2011-06-23
    • US12973261
    • 2010-12-20
    • Hiroshi TAKEDA
    • Hiroshi TAKEDA
    • H01L29/78H01L21/336
    • H01L29/0847H01L29/41725H01L29/6656H01L29/66628H01L29/66636H01L29/66795H01L29/7843H01L29/7848H01L29/785
    • Disclosed is a semiconductor device wherein device characteristics are improved by applying a strong stress to a channel region. The semiconductor device includes a semiconductor substrate, a gate insulating film formed over a first plane of the semiconductor substrate, a gate electrode formed over the gate insulating film, a gate sidewall insulating film formed over the sidewall of the gate electrode, source/drain diffusion layer regions into which impurities are implanted, the source/drain diffusion layer regions being adjacent to a channel region formed in the semiconductor substrate below the gate electrode, and a stress applying film formed over the source/drain diffusion layer regions except over the upper part of the gate electrode; and recesses or protrusions are formed in the region where the source/drain diffusion layer regions are formed over the first plane of the semiconductor substrate.
    • 公开了一种半导体器件,其中通过对沟道区施加强应力来改善器件特性。 半导体器件包括半导体衬底,形成在半导体衬底的第一平面上的栅极绝缘膜,形成在栅极绝缘膜上的栅电极,形成在栅电极的侧壁上的栅极侧壁绝缘膜,源/漏扩散 掺杂有杂质的层间区域,源极/漏极扩散层区域与形成在栅电极下方的半导体衬底中的沟道区域相邻,以及形成在除了上部的源/漏扩散层区域之上的应力施加膜 的栅电极; 并且在半导体衬底的第一平面上形成源极/漏极扩散层区域的区域中形成凹部或突起。