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1. 发明申请

US20140217061A1 Plasma Etching Method 审中-公开
标题翻译：等离子蚀刻法
公开(公告)号：US20140217061A1
公开(公告)日：2014-08-07
申请号：US14248376
申请日：2014-04-09
申请人： Hitachi High-Technologies Corporation
发明人： Takahiro Abe , Naohiro Yamamoto , Kentaro Yamada , Makoto Suyama , Daisuke Fujita
IPC分类号： G11B5/31
CPC分类号： G11B5/3163 , C23F4/00 , G01R33/098 , G11B5/1278 , G11B5/3909
摘要： The present invention provides, in a plasma etching method for plasma-etching a magnetic film, a plasma etching method that allows a desired etching depth to be obtained regardless of the opening size of a mask. The present invention is, in a plasma etching method for plasma-etching a magnetic film by using a tantalum film as a mask, characterized by including: a first process to plasma-etch the magnetic film to a desired depth by using a mixed gas of an ammonia gas and a helium gas; and a second process, after the first process, to plasma-etch the magnetic film etched to the prescribed depth by using a mixed gas of an ammonia gas and a gas containing the oxygen element or a mixed gas of an ammonia gas and a gas containing a hydroxyl group.
摘要翻译：本发明在等离子体蚀刻磁性膜的等离子体蚀刻方法中，提供了能够获得期望的蚀刻深度的等离子体蚀刻方法，而不管掩模的开口尺寸如何。本发明是通过使用钽膜作为掩模等离子体蚀刻磁性膜的等离子体蚀刻方法，其特征在于包括：通过使用混合气体等离子体刻蚀磁性膜至所需深度的第一工艺氨气和氦气; 以及第二工序，在第一工序之后，通过使用氨气和含有氧元素的气体或氨气和含有气体的气体的混合气体，将蚀刻到规定深度的磁性膜进行等离子体蚀刻羟基。

2. 发明授权

US08728946B1 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US08728946B1
公开(公告)日：2014-05-20
申请号：US13767913
申请日：2013-02-15
申请人： Hitachi High-Technologies Corporation
发明人： Takahiro Abe , Naohiro Yamamoto , Kentaro Yamada , Makoto Suyama , Daisuke Fujita
IPC分类号： H01L21/302 , H01L21/461
CPC分类号： G11B5/3163 , C23F4/00 , G01R33/098 , G11B5/1278 , G11B5/3909
摘要： The present invention provides, in a plasma etching method for plasma-etching a magnetic film, a plasma etching method that allows a desired etching depth to be obtained regardless of the opening size of a mask. The present invention is, in a plasma etching method for plasma-etching a magnetic film by using a tantalum film as a mask, characterized by including: a first process to plasma-etch the magnetic film to a desired depth by using a mixed gas of an ammonia gas and a helium gas; and a second process, after the first process, to plasma-etch the magnetic film etched to the prescribed depth by using a mixed gas of an ammonia gas and a gas containing the oxygen element or a mixed gas of an ammonia gas and a gas containing a hydroxyl group.
摘要翻译：本发明在等离子体蚀刻磁性膜的等离子体蚀刻方法中，提供了能够获得期望的蚀刻深度的等离子体蚀刻方法，而不管掩模的开口尺寸如何。本发明是通过使用钽膜作为掩模等离子体蚀刻磁性膜的等离子体蚀刻方法，其特征在于包括：通过使用混合气体等离子体刻蚀磁性膜至所需深度的第一工艺氨气和氦气; 以及第二工序，在第一工序之后，通过使用氨气和含有氧元素的气体或氨气和含有气体的气体的混合气体，将蚀刻到规定深度的磁性膜进行等离子体蚀刻羟基。

3. 发明授权

US09972776B2 Plasma processing method 有权
公开(公告)号：US09972776B2
公开(公告)日：2018-05-15
申请号：US15260351
申请日：2016-09-09
申请人： Hitachi High-Technologies Corporation
发明人： Makoto Suyama , Naohiro Yamamoto , Masato Ishimaru , Hidenori Toyooka , Norihiro Hosaka
IPC分类号： H01J37/32 , H01L43/12 , B08B9/08 , H01L43/08 , H01L43/10 , B08B7/00
CPC分类号： H01L43/12 , B08B7/0035 , B08B9/08 , H01J37/321 , H01J37/3211 , H01J37/32165 , H01J37/32651 , H01J37/32853 , H01J37/32862 , H01J2237/334 , H01J2237/335 , H01L43/08 , H01L43/10
摘要： According to one embodiment of the present invention, there is provided a plasma processing method for forming a pattern of a mask on a laminated film of a magnetic film and a metal oxide film, and the plasma processing method includes: plasma etching the magnetic film in a chamber; and after the plasma etching, plasma cleaning the chamber, wherein the plasma cleaning performs first plasma cleaning of plasma cleaning using a gas mixture of chlorine element-containing gas and boron trichloride gas, and after the first plasma cleaning, second plasma cleaning of removing boron remaining in the chamber.

4. 发明申请

US20160133834A1 PLASMA ETCHING METHOD 审中-公开
公开(公告)号：US20160133834A1
公开(公告)日：2016-05-12
申请号：US14995897
申请日：2016-01-14
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Daisuke Fujita , Makoto Suyama , Naohiro Yamamoto , Masato Ishimaru , Kentaro Yamada
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , C23F4/00
摘要： In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.

5. 发明授权

US09269892B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US09269892B2
公开(公告)日：2016-02-23
申请号：US14181537
申请日：2014-02-14
申请人： Hitachi High-Technologies Corporation
发明人： Daisuke Fujita , Makoto Suyama , Naohiro Yamamoto , Masato Ishimaru , Kentaro Yamada
IPC分类号： H01L43/12 , C23F4/00
CPC分类号： H01L43/12 , C23F4/00
摘要： In a plasma etching method of plasma-etching a sample which has a first magnetic film, a second magnetic film disposed above the first magnetic film, a metal oxide film disposed between the first magnetic film and the second magnetic film, a second metal film disposed over the second magnetic film and forming an upper electrode, and a first metal film disposed below the first magnetic film and forming a lower electrode, the plasma etching method includes the steps of: a first process for etching the first magnetic film, the metal oxide film, and the second magnetic film by using carbon monoxide gas; and a second process for etching the sample by using mixed gas of hydrogen gas and inactive gas after the first process. In this case, the first metal film is a film containing therein tantalum.
摘要翻译：在等离子体蚀刻等离子体蚀刻具有第一磁性膜的样品的等离子体蚀刻方法中，设置在第一磁性膜上方的第二磁性膜，设置在第一磁性膜和第二磁性膜之间的金属氧化物膜，设置第二金属膜在所述第二磁性膜上形成上部电极，以及设置在所述第一磁性膜的下方并形成下部电极的第一金属膜，所述等离子体蚀刻方法包括以下步骤：蚀刻所述第一磁性膜，所述金属氧化物薄膜和第二磁性薄膜通过使用一氧化碳气体; 以及在第一工序之后通过使用氢气和惰性气体的混合气体来蚀刻样品的第二工序。在这种情况下，第一金属膜是其中含有钽的膜。

6. 发明授权

US09378758B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US09378758B2
公开(公告)日：2016-06-28
申请号：US14248376
申请日：2014-04-09
申请人： Hitachi High-Technologies Corporation
发明人： Takahiro Abe , Naohiro Yamamoto , Kentaro Yamada , Makoto Suyama , Daisuke Fujita
IPC分类号： G11B5/31 , C23F4/00 , G11B5/127 , G11B5/39 , G01R33/09
CPC分类号： G11B5/3163 , C23F4/00 , G01R33/098 , G11B5/1278 , G11B5/3909
摘要： The present invention provides, in a plasma etching method for plasma-etching a magnetic film, a plasma etching method that allows a desired etching depth to be obtained regardless of the opening size of a mask. The present invention is, in a plasma etching method for plasma-etching a magnetic film by using a tantalum film as a mask, characterized by including: a first process to plasma-etch the magnetic film to a desired depth by using a mixed gas of an ammonia gas and a helium gas; and a second process, after the first process, to plasma-etch the magnetic film etched to the prescribed depth by using a mixed gas of an ammonia gas and a gas containing the oxygen element or a mixed gas of an ammonia gas and a gas containing a hydroxyl group.
摘要翻译：本发明在等离子体蚀刻磁性膜的等离子体蚀刻方法中，提供了能够获得期望的蚀刻深度的等离子体蚀刻方法，而不管掩模的开口尺寸如何。本发明是通过使用钽膜作为掩模等离子体蚀刻磁性膜的等离子体蚀刻方法，其特征在于包括：通过使用混合气体等离子体刻蚀磁性膜至所需深度的第一工艺氨气和氦气; 以及第二工序，在第一工序之后，通过使用氨气和含有氧元素的气体或氨气和含有气体的气体的混合气体，将蚀刻到规定深度的磁性膜进行等离子体蚀刻羟基。

7. 发明授权

US09281470B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US09281470B2
公开(公告)日：2016-03-08
申请号：US14447614
申请日：2014-07-31
申请人： Hitachi High-Technologies Corporation
发明人： Takahiro Abe , Naohiro Yamamoto , Makoto Suyama , Masato Ishimaru
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , H01J37/321 , H01J37/32651
摘要： In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched.
摘要翻译：在通过使用等离子体处理装置的等离子体处理方法中等离子体处理方法，该等离子体处理装置包括其中样品被等离子体处理的处理室，用于密封处理室的上部的密封的电介质窗口，设置在上面的电感耦合天线电介质窗口，用于向电感耦合天线提供射频电力的射频电源和设置在感应耦合天线和电介质窗口之间的法拉第屏蔽，沉积层通过等离子体刻蚀的磁性层上形成等离子体处理，同时在等离子体刻蚀了磁性层之后，向法拉第屏蔽层施加射频电压。

8. 发明申请

US20150349245A1 PLASMA PROCESSING METHOD 有权
标题翻译：等离子体处理方法
公开(公告)号：US20150349245A1
公开(公告)日：2015-12-03
申请号：US14447614
申请日：2014-07-31
申请人： Hitachi High-Technologies Corporation
发明人： Takahiro Abe , Naohiro Yamamoto , Makoto Suyama , Masato Ishimaru
IPC分类号： H01L43/12
CPC分类号： H01L43/12 , H01J37/321 , H01J37/32651
摘要： In a plasma processing method for plasma-etching magnetic layer by using a plasma processing device including a processing chamber in which a sample is plasma-processed, a dielectric window to seal an upper part of the processing chamber hermetically, an inductive coupling antenna disposed above the dielectric window, a radio-frequency power source to supply radio-frequency electric power to the inductive coupling antenna and a Faraday shield disposed between the inductive coupling antenna and the dielectric window, a deposit layer is formed on the plasma-etched magnetic layer by plasma processing while applying radio-frequency voltage to the Faraday shield after the magnetic layer is plasma-etched.
摘要翻译：在通过使用等离子体处理装置的等离子体处理方法中等离子体处理方法，该等离子体处理装置包括其中样品被等离子体处理的处理室，用于密封处理室的上部的密封的电介质窗口，设置在上面的电感耦合天线电介质窗口，用于向电感耦合天线提供射频电力的射频电源和设置在感应耦合天线和电介质窗口之间的法拉第屏蔽，沉积层通过等离子体刻蚀的磁性层上形成等离子体处理，同时在等离子体刻蚀了磁性层之后，向法拉第屏蔽层施加射频电压。

9. 发明授权

US09506154B2 Plasma processing method 有权
标题翻译：等离子体处理方法
公开(公告)号：US09506154B2
公开(公告)日：2016-11-29
申请号：US14770082
申请日：2014-11-19
申请人： Hitachi High-Technologies Corporation
发明人： Masato Ishimaru , Takeshi Shimada , Makoto Suyama , Takahiro Abe
IPC分类号： B44C1/22 , C23F1/02 , C23F1/12
CPC分类号： C23F1/02 , C23F1/12 , C23F4/00 , H01L43/12
摘要： A plasma processing method is provided for reducing dimensions of a film to be etched from patterned dimensions, and is capable of reducing dimensions without causing deformation or collapse of the film to be etched. A plasma processing method for trimming a tantalum film by plasma etching using a resist, an antireflective film disposed under the resist, and a mask film disposed under the antireflective film, includes the steps of trimming the antireflective film and the mask film by plasma etching with the resist as a mask; removing the resist and the antireflective film subjected to the trimming, by plasma; and trimming the tantalum film by plasma etching with a mask film obtained after the resist and the antireflective film subjected to the trimming are removed by plasma, as a mask.
摘要翻译：提供了一种等离子体处理方法，用于从图案化尺寸减小要蚀刻的膜的尺寸，并且能够减小尺寸，而不会导致待蚀刻的膜的变形或塌陷。使用抗蚀剂的等离子体蚀刻来修整钽膜的等离子体处理方法，设置在抗蚀剂下方的防反射膜和设置在抗反射膜下的掩模膜的步骤包括以下步骤：通过等离子体蚀刻对抗反射膜和掩模膜进行修整抗蚀剂作为掩模; 通过等离子体去除经过修整的抗蚀剂和抗反射膜; 作为掩模，通过用抗蚀剂和经过修整的抗反射膜之后获得的掩模膜通过等离子体蚀刻来修整钽膜作为掩模。

10. 发明授权

US09017564B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US09017564B2
公开(公告)日：2015-04-28
申请号：US13761235
申请日：2013-02-07
申请人： Hitachi High-Technologies Corporation
发明人： Atsushi Yoshida , Naohiro Yamamoto , Makoto Suyama , Kentaro Yamada , Daisuke Fujita
IPC分类号： B44C1/22 , C03C15/00 , C03C25/68 , C23F1/00 , H01L21/302 , H01L21/461 , G11C11/02 , H01L43/12
CPC分类号： G11C11/02 , H01L43/12
摘要： A plasma etching method performs plasma etching on a sample, which has laminated films containing a variable layer of a magnetic film, a barrier layer of an insulating material, and a fixed layer of a magnetic film, using a hard mask, which includes at least one of a Ta film and a TiN film. The plasma etching method includes a first step of etching the laminated films using N2 gas; and a second step of etching the laminated films after the first step using mixed gas of N2 gas and gas containing carbon elements.
摘要翻译：等离子体蚀刻方法使用硬掩模对具有包含磁性膜的可变层，绝缘材料的阻挡层和磁性膜的固定层的层叠膜的样品进行等离子体蚀刻，所述硬掩模至少包括一个Ta膜和一个TiN膜。等离子体蚀刻方法包括：使用N 2气蚀刻层叠膜的第一工序; 以及在第一步骤之后使用N 2气体和含有碳元素的气体的混合气体蚀刻层压膜的第二步骤。

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