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1. 发明授权

US10395935B2 Plasma processing apparatus and plasma processing method 有权
公开(公告)号：US10395935B2
公开(公告)日：2019-08-27
申请号：US15904856
申请日：2018-02-26
申请人： Hitachi High-Technologies Corporation
发明人： Masaki Ishiguro , Masahiro Sumiya , Shigeru Shirayone , Kazuyuki Ikenaga , Tomoyuki Tamura
IPC分类号： H01L21/3065 , H01L21/683 , H01J37/32
摘要： A plasma processing apparatus includes a plasma processing chamber processing a sample using plasma, a radio frequency power supply supplying radio frequency power for generating the plasma, a sample stage including an electrode electrostatically chucking the sample, mounting the sample thereon, a DC power supply applying DC voltage to the electrode, and a control device shifting the DC voltage previously set, in a negative direction by a first shift amount during discharge of the plasma, shifting the DC voltage having been shifted in the negative direction by the first shift amount, in a positive direction by a second shift amount after the discharge of the plasma. The first shift amount has a value changing potential over a surface of the sample to 0 V, upon shifting the DC voltage in the positive direction. The second shift amount has a value obtained based on a floating potential of the plasma.

2. 发明授权

US09960031B2 Plasma processing apparatus and plasma processing method 有权
公开(公告)号：US09960031B2
公开(公告)日：2018-05-01
申请号：US15293480
申请日：2016-10-14
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Masahiro Sumiya , Motohiro Tanaka
IPC分类号： H01L21/302 , H01L21/02 , H01J37/32 , H01L21/28 , H01L21/311 , H01L21/3213 , H01L21/3065 , H01L21/67
CPC分类号： H01L21/0206 , H01J37/32192 , H01J37/3266 , H01L21/02002 , H01L21/02164 , H01L21/02274 , H01L21/02334 , H01L21/28123 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137 , H01L21/67259
摘要： In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a component of Si.

3. 发明授权

US09496147B2 Plasma processing apparatus and plasma processing method 有权
公开(公告)号：US09496147B2
公开(公告)日：2016-11-15
申请号：US14509935
申请日：2014-10-08
申请人： Hitachi High-Technologies Corporation
发明人： Masahiro Sumiya , Motohiro Tanaka
IPC分类号： H01L21/302 , H01L21/3065 , H01J37/32 , H01L21/28 , H01L21/311 , H01L21/3213 , H01L21/02
CPC分类号： H01L21/0206 , H01J37/32192 , H01J37/3266 , H01L21/02002 , H01L21/02164 , H01L21/02274 , H01L21/02334 , H01L21/28123 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137 , H01L21/67259
摘要： In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a component of Si.

4. 发明授权

US11315792B2 Plasma processing apparatus and plasma processing method 有权
公开(公告)号：US11315792B2
公开(公告)日：2022-04-26
申请号：US16506095
申请日：2019-07-09
申请人： Hitachi High-Technologies Corporation
发明人： Masaki Ishiguro , Masahiro Sumiya , Shigeru Shirayone , Kazuyuki Ikenaga , Tomoyuki Tamura
IPC分类号： H01J37/32 , H01L21/3065 , H01L21/683
摘要： A plasma processing apparatus includes a plasma processing chamber processing a sample using plasma, a radio frequency power supply supplying radio frequency power for generating the plasma, a sample stage including an electrode electrostatically chucking the sample, mounting the sample thereon, a DC power supply applying DC voltage to the electrode, and a control device shifting the DC voltage previously set, in a negative direction by a first shift amount during discharge of the plasma, shifting the DC voltage having been shifted in the negative direction by the first shift amount, in a positive direction by a second shift amount after the discharge of the plasma. The first shift amount has a value changing potential over a surface of the sample to 0 V, upon shifting the DC voltage in the positive direction. The second shift amount has a value obtained based on a floating potential of the plasma.

5. 发明申请

US20170032955A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20170032955A1
公开(公告)日：2017-02-02
申请号：US15293480
申请日：2016-10-14
申请人： HITACHI HIGH-TECHNOLOGIES CORPORATION
发明人： Masahiro Sumiya , Motohiro Tanaka
IPC分类号： H01L21/02 , H01L21/67 , H01L21/311
CPC分类号： H01L21/0206 , H01J37/32192 , H01J37/3266 , H01L21/02002 , H01L21/02164 , H01L21/02274 , H01L21/02334 , H01L21/28123 , H01L21/3065 , H01L21/31116 , H01L21/32136 , H01L21/32137 , H01L21/67259
摘要： In a plasma processing apparatus comprising a processing chamber arranged in a vacuum chamber, a sample stage arranged under the processing chamber and having its top surface on which a wafer to be processed is mounted, a vacuum decompression unit for evacuating the interior of the processing chamber to reduce the pressure therein, and introduction holes arranged above said sample stage to admit process gas into the processing chamber, the wafer having its top surface mounted with a film structure and the film structure being etched by using plasma formed by using the process gas, the film structure is constituted by having a resist film or a mask film, a poly-silicon film and an insulation film laminated in this order from top to bottom on a substrate and before the wafer is mounted on the sample stage and the poly-silicon film underlying the mask film is etched, plasma is formed inside the processing chamber to cover the surface of members inside the processing chamber with a coating film containing a component of Si.
摘要翻译：在包括设置在真空室中的处理室的等离子体处理装置中，设置在处理室下方并且其顶表面上安装有待加工晶片的样品台，用于抽出处理室内部的真空减压单元为了降低其中的压力，以及设置在所述样品台上方的引入孔，以允许处理气体进入处理室，晶片的顶表面安装有膜结构，并且通过使用通过使用处理气体形成的等离子体蚀刻膜结构，膜结构通过在基板上从顶部到底部依次层叠抗蚀剂膜或掩模膜，多晶硅膜和绝缘膜，并且在晶片安装在样品台上之前和多晶硅蚀刻掩模膜下面的膜，在处理室内部形成等离子体，以覆盖处理室内的部件的表面含有Si成分的膜。

6. 发明申请

US20160027618A1 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD 审中-公开
标题翻译：等离子体加工设备和等离子体处理方法
公开(公告)号：US20160027618A1
公开(公告)日：2016-01-28
申请号：US14626988
申请日：2015-02-20
申请人： Hitachi High-Technologies Corporation
发明人： Masatoshi Kawakami , Hiroho Kitada , Hideki Kihara , Hironori Kusumoto , Masahiro Sumiya , Motohiro Tanaka , Yutaka Kozuma
IPC分类号： H01J37/32 , H01L21/3213 , H01L21/311 , H01L21/67 , H01L21/3065
CPC分类号： H01J37/32449 , H01J37/32816 , H01J37/32834
摘要： A plasma processing apparatus includes a sample stage in a processing chamber in a vacuum container having a placement surface on which a wafer to be processed by using the plasma is placed, a discharge pump connected to a discharge port disposed below the sample stage, and an adjuster that adjusts the amount of discharged gas, in which a first process step of supplying a first processing gas from above the placement surface into the processing chamber and supplying a second processing gas from below the placement surface into the processing chamber to process the wafer by using the first processing gas and a second process step where the first processing gas and the second processing gas are reversed are repeatedly switched over therebetween, and the adjuster adjusts a pressure in the processing chamber to a predetermined value during the processing.
摘要翻译：一种等离子体处理装置，包括在真空容器的处理室中的样品台，该真空容器具有放置表面，在该放置面上配置有利用等离子体处理的晶片，与放置在样品台下方的排出口连接的排出泵，调节器，其调节排出气体的量，其中第一处理步骤将第一处理气体从放置表面上方供应到处理室中，并且将第二处理气体从放置表面下方供应到处理室中，以通过使用第一处理气体和第一处理气体和第二处理气体反转的第二处理步骤在其间重复切换，并且调节器在处理期间将处理室中的压力调节到预定值。

7. 发明申请

US20140377958A1 PLASMA PROCESSING METHOD AND VACUUM PROCESSING APPARATUS 审中-公开
标题翻译：等离子体处理方法和真空处理装置
公开(公告)号：US20140377958A1
公开(公告)日：2014-12-25
申请号：US14180552
申请日：2014-02-14
申请人： Hitachi High-Technologies Corporation
发明人： Kazuumi Tanaka , Masahiro Sumiya
IPC分类号： H01L21/3065 , H01L21/67
CPC分类号： H01L21/02071 , H01L21/67207
摘要： A plasma processing method embodying this invention is for applying plasma processing to a sample having a metal-containing film. This method includes the steps of applying plasma processing to the sample by using a mixture of halogen-containing gas and nitrogen gas, generating a plasma using a mixture of oxygen gas and inert gas in a plasma production chamber, which is different from a post-treatment chamber used for posttreatment of the plasma-processed sample, and performing posttreatment of the sample while at the same time transporting the generated plasma to the posttreatment chamber via a transfer path disposed between the plasma production chamber and the posttreatment chamber.
摘要翻译：体现本发明的等离子体处理方法是对具有含金属膜的样品进行等离子体处理。该方法包括以下步骤：通过使用含卤素气体和氮气的混合物对样品进行等离子体处理，在等离子体生成室中使用氧气和惰性气体的混合物产生等离子体，处理室，用于对等离子体处理样品进行后处理，并且在通过设置在等离子体生成室和后处理室之间的传送路径同时将生成的等离子体输送到后处理室的同时进行样品的后处理。

8. 发明申请

US20210358722A1 PLASMA PROCESSING APPARATUS 有权
公开(公告)号：US20210358722A1
公开(公告)日：2021-11-18
申请号：US16494437
申请日：2018-07-20
申请人： Hitachi High-Technologies Corporation
发明人： Anil Pandey , Yoshito Kamaji , Masahiro Sumiya
IPC分类号： H01J37/32
摘要： To reduce the damage caused due to the degradation of sealing material without complicating the structure of the vacuum sealing material of the vacuum container and to perform cleaning without affecting the lifetime of the sealing material in a plasma processing apparatus, this invention provides a plasma processing apparatus in which a window portion and a processing chamber are coupled to each other with an elastomeric sealing material sandwiched therebetween, and a sealing material is arranged at a position where a ratio of a distance from the inner wall surface of a processing chamber in an interstice portion to the sealing material with respect to the interstice between the window portion and the processing chamber having the sealing material sandwiched there between is 3 or more, in a vacuum state with the air exhausted from the processing chamber by the vacuum exhaust unit.

9. 发明授权

US10825700B2 Plasma processing apparatus and method for releasing sample 有权
公开(公告)号：US10825700B2
公开(公告)日：2020-11-03
申请号：US15425155
申请日：2017-02-06
申请人： Hitachi High-Technologies Corporation
发明人： Masaki Ishiguro , Masahiro Sumiya
IPC分类号： H01L21/67 , H01J37/32 , H01L21/683
摘要： The invention provides a plasma processing apparatus which includes a processing chamber, a radio frequency power source to supply a radio frequency power for plasma generation, a sample stage equipped with an electrostatic chuck electrode of a sample, a DC power source to apply a DC voltage to the electrode, and a control unit to change the DC voltage from a predetermined value to almost 0 V when a predetermined time elapses since the supplying of the radio frequency power is stopped. The predetermined value is a predetermined value indicating that a potential of the sample when the DC voltage is almost 0 V becomes almost 0 V. The predetermined time is a time defined on the basis of a time when charged particles generated by the plasma processing disappear or a time when an afterglow discharge disappears.

10. 发明授权

US09941133B2 Plasma processing apparatus and plasma processing method 有权
公开(公告)号：US09941133B2
公开(公告)日：2018-04-10
申请号：US15057162
申请日：2016-03-01
申请人： Hitachi High-Technologies Corporation
发明人： Masaki Ishiguro , Masahiro Sumiya , Shigeru Shirayone , Kazuyuki Ikenaga , Tomoyuki Tamura
IPC分类号： C23C16/00 , C23F1/00 , H01L21/306 , H01L21/3065 , H01L21/683 , H01J37/32
CPC分类号： H01L21/3065 , H01J37/32422 , H01J37/32577 , H01J37/32706 , H01J37/32917 , H01J37/32972 , H01L21/6831
摘要： A plasma processing apparatus includes a plasma processing chamber processing a sample using plasma, a radio frequency power supply supplying radio frequency power for generating the plasma, a sample stage including an electrode electrostatically chucking the sample, mounting the sample thereon, a DC power supply applying DC voltage to the electrode, and a control device shifting the DC voltage previously set, in a negative direction by a first shift amount during discharge of the plasma, shifting the DC voltage having been shifted in the negative direction by the first shift amount, in a positive direction by a second shift amount after the discharge of the plasma. The first shift amount has a value changing potential over a surface of the sample to 0 V, upon shifting the DC voltage in the positive direction. The second shift amount has a value obtained based on a floating potential of the plasma.

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