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1. 发明授权

US06680252B2 Method for planarizing barc layer in dual damascene process 有权
标题翻译：双镶嵌工艺中平面化棒材层的方法
公开(公告)号：US06680252B2
公开(公告)日：2004-01-20
申请号：US09854966
申请日：2001-05-15
申请人： Anseime Chen , Hui-Ling Huang , Vencent Chang , Andersen Chang
发明人： Anseime Chen , Hui-Ling Huang , Vencent Chang , Andersen Chang
IPC分类号： H01L21302
CPC分类号： H01L21/76808 , H01L21/0276
摘要： The present invention is directed to a method for planarizing BARC layer in dual damascene process. For forming a dual damascene interconnect structure, by use of the present invention, a planar topography of the BARC layer is achieved by chemical mechanical polishing. The present invention applies a low temperature to bake the coated BARC layer before BARC material cross-links and induces the anti-reflective characteristic. Then, the BARC layer is planarized by chemical mechanical polishing. Next, a high temperature baking of the BARC layer is provided before coating the photoresist, so formation of the BARC layer is controlled with minimized variation in surface level and has the antireflective characteristic. Thus, the profile distortion on the via and the critical dimension control for the via are improved by patterning the via on a planar and an anti-reflective surface.
摘要翻译：本发明涉及一种用于在双镶嵌工艺中平坦化BARC层的方法。为了形成双镶嵌互连结构，通过使用本发明，通过化学机械抛光实现了BARC层的平面形貌。本发明应用低温以在BARC材料交联之前烘烤涂覆的BARC层并诱导抗反射特性。然后，BARC层通过化学机械抛光进行平面化。接下来，在涂覆光致抗蚀剂之前提供BARC层的高温烘烤，因此以最小化的表面水平的变化来控制BARC层的形成并具有抗反射特性。因此，通过在平面和抗反射表面上图形化通孔来改善通孔上的轮廓畸变和通孔的临界尺寸控制。

2. 发明授权

US07592262B2 Method for manufacturing MOS transistors utilizing a hybrid hard mask 有权
标题翻译：利用混合硬掩模制造MOS晶体管的方法
公开(公告)号：US07592262B2
公开(公告)日：2009-09-22
申请号：US11689508
申请日：2007-03-21
申请人： Hui-Ling Huang , Ming-Shing Chen , Nien-Chung Li , Li-Shiun Chen , Hsin Tai
发明人： Hui-Ling Huang , Ming-Shing Chen , Nien-Chung Li , Li-Shiun Chen , Hsin Tai
IPC分类号： H01L21/302
CPC分类号： H01L21/28123 , H01L21/0337 , H01L21/32139 , H01L29/66636
摘要： A method for manufacturing MOS transistor with hybrid hard mask includes providing a substrate having a dielectric layer and a polysilicon layer thereon, forming a hybrid hard mask having a middle hard mask and a spacer hard mask covering sidewalls of the middle hard mask on the polysilicon layer, performing a first etching process to etch the polysilicon layer and the dielectric layer through the hybrid hard mask to form a gate structure, performing a second etching process to form recesses in the substrate at two sides of the gate structure, and performing a SEG process to form epitaxial silicon layers in each recess.
摘要翻译：一种制造具有混合硬掩模的MOS晶体管的方法包括：在其上提供具有介电层和多晶硅层的衬底，形成具有中间硬掩模和覆盖多晶硅层上的中间硬掩模的侧壁的间隔物硬掩模的混合硬掩模执行第一蚀刻工艺以通过混合硬掩模蚀刻多晶硅层和电介质层以形成栅极结构，执行第二蚀刻工艺以在栅极结构的两侧在衬底中形成凹槽，并且执行SEG工艺以在每个凹部中形成外延硅层。

3. 发明申请

US20080233746A1 METHOD FOR MANUFACTURING MOS TRANSISTORS UTILIZING A HYBRID HARD MASK 有权
标题翻译：使用混合硬掩模制造MOS晶体管的方法
公开(公告)号：US20080233746A1
公开(公告)日：2008-09-25
申请号：US11689508
申请日：2007-03-21
申请人： Hui-Ling Huang , Ming-Shing Chen , Nien-Chung Li , Li-Shiun Chen , Hsin Tai
发明人： Hui-Ling Huang , Ming-Shing Chen , Nien-Chung Li , Li-Shiun Chen , Hsin Tai
IPC分类号： H01L21/302
CPC分类号： H01L21/28123 , H01L21/0337 , H01L21/32139 , H01L29/66636
摘要： A method for manufacturing MOS transistor with hybrid hard mask includes providing a substrate having a dielectric layer and a polysilicon layer thereon, forming a hybrid hard mask having a middle hard mask and a spacer hard mask covering sidewalls of the middle hard mask on the polysilicon layer, performing a first etching process to etch the polysilicon layer and the dielectric layer through the hybrid hard mask to form a gate structure, performing a second etching process to form recesses in the substrate at two sides of the gate structure, and performing a SEG process to form epitaxial silicon layers in each recess.
摘要翻译：一种制造具有混合硬掩模的MOS晶体管的方法包括：在其上提供具有介电层和多晶硅层的衬底，形成具有中间硬掩模和覆盖多晶硅层上的中间硬掩模的侧壁的间隔物硬掩模的混合硬掩模执行第一蚀刻工艺以通过混合硬掩模蚀刻多晶硅层和电介质层以形成栅极结构，执行第二蚀刻工艺以在栅极结构的两侧在衬底中形成凹槽，并且执行SEG工艺以在每个凹部中形成外延硅层。

4. 发明授权

US07268070B2 Profile improvement method for patterning 有权
标题翻译：轮廓改良方法
公开(公告)号：US07268070B2
公开(公告)日：2007-09-11
申请号：US10445047
申请日：2003-05-27
申请人： Hui-Ling Huang , Benjamin Szu-Min Lin , Cheng-Chung Chen , George Liu
发明人： Hui-Ling Huang , Benjamin Szu-Min Lin , Cheng-Chung Chen , George Liu
IPC分类号： H01L21/47 , H01L21/4757
CPC分类号： G03F7/40
摘要： There is a grain phenomenon issue of rough sidewall for patterning. Thus, imprecise grain profiles would be observed. As the critical dimensions of integrated circuit microelectronics fabrication device have decreased, the effect of grain phenomenon have become more pronounced. A profile improvement method with a thermal-compressive material and a thermal-compressive process is provided to solve the grain phenomenon issue for baseline of 0.09 um generation and beyond. With this material, the profile can be improved no matter in top view or lateral view. Furthermore, there are 0.1 um IDOF improvement and better physical etching performance.
摘要翻译：图案粗糙的侧壁存在颗粒现象问题。因此，将观察到不精确的颗粒轮廓。随着集成电路微电子制造装置的关键尺寸降低，晶粒现象的影响变得更加明显。提供了一种具有热压缩材料和热压缩工艺的轮廓改进方法，以解决0.09 um以上的基线的纹理现象问题。使用这种材料，无论在俯视图或侧视图中，轮廓都可以改进。此外，具有0.1um的IDOF改进和更好的物理蚀刻性能。

5. 发明授权

US06740473B1 Method for shrinking critical dimension of semiconductor devices 有权
标题翻译：缩小半导体器件临界尺寸的方法
公开(公告)号：US06740473B1
公开(公告)日：2004-05-25
申请号：US10065914
申请日：2002-11-28
申请人： Benjamin Szu-Min Lin , Hui-Ling Huang
发明人： Benjamin Szu-Min Lin , Hui-Ling Huang
IPC分类号： G03F700
CPC分类号： G03F7/40
摘要： A method for shrinking critical dimension of semiconductor devices includes forming a first pattern of a photoresist layer on a semiconductor device layer, by performing a blanket exposing process to expose the photoresist layer and the exposed semiconductor device layer to light having a wavelength that can be absorbed by the photoresist layer to provide the photoresist layer with a predetermined energy per unit area, thereby producing photo generated acids therein. A first thermal process is performed to diffuse the photo-generated acids formed within the photoresist layer and to equalize glass transition temperature (Tg) of the photoresist layer. A second thermal process is thereafter carried out. The first thermal process is carried out under a temperature lower than Tg of the photoresist layer.
摘要翻译：缩小半导体器件的临界尺寸的方法包括：在半导体器件层上形成光致抗蚀剂层的第一图案，通过进行橡皮布曝光工艺，将光致抗蚀剂层和暴露的半导体器件层暴露于具有可被吸收的波长的光通过光致抗蚀剂层提供每单位面积预定能量的光致抗蚀剂层，从而在其中产生光生酸。执行第一热处理以扩散在光致抗蚀剂层内形成的光生酸，并平衡光致抗蚀剂层的玻璃化转变温度（Tg）。此后进行第二热处理。第一热处理在低于光致抗蚀剂层的Tg的温度下进行。

6. 发明授权

US08950343B2 Adjustable table with an assistant device 有权
标题翻译：带可调节台的辅助装置
公开(公告)号：US08950343B2
公开(公告)日：2015-02-10
申请号：US13930197
申请日：2013-06-28
申请人： Hui-Ling Huang
发明人： Hui-Ling Huang
IPC分类号： A47B3/02 , A47B9/16
CPC分类号： A47B9/16 , A47B3/02
摘要： An adjustable table includes a table board, a first foot, a second foot, an air pressure bar and an assistant device. The first foot crossly and pivotally connects with the second foot, wherein one end of the first foot pivotally connects with a first fastener on the bottom side of the table board, and one end of the second foot pivotally connects with a pivot joint. The assistant device is fixed between the first fastener and a second fastener, wherein one end of the air pressure bar is fixed on the second fastener while the other end fixed on the assistant device. Therefore, when the air pressure bar is operated, smooth sliding of the air pressure bar is provided, whereby the structural strength of the table is reinforced.
摘要翻译：可调节的桌子包括台板，第一脚，第二脚，空气压力杆和辅助装置。第一脚与第二脚交叉并枢转地连接，其中第一脚的一端与台板的底侧上的第一紧固件枢转连接，并且第二脚的一端与枢转接头枢转连接。辅助装置固定在第一紧固件和第二紧固件之间，其中空气压力杆的一端固定在第二紧固件上，而另一端固定在辅助装置上。因此，当气压杆操作时，提供气压棒的平滑滑动，从而增强了工作台的结构强度。

7. 发明申请

US20140041554A1 ADJUSTABLE TABLE WITH AN ASSISTANT DEVICE 审中-公开
标题翻译：具有辅助装置的可调节表
公开(公告)号：US20140041554A1
公开(公告)日：2014-02-13
申请号：US13930197
申请日：2013-06-28
申请人： Hui-Ling Huang
发明人： Hui-Ling Huang
IPC分类号： A47B9/16 , A47B3/02
CPC分类号： A47B9/16 , A47B3/02
摘要： A height-adjustable table includes a table board, a first foot, a second foot, an air pressure bar and an assistant device. The first foot crossly and pivotally connects with the second foot, wherein one end of the first foot pivotally connects with a first fastener on the bottom side of the table board, and one end of the second foot pivotally connects with a pivot joint. The assistant device is fixed between the first fastener and a second fastener, wherein one end of the air pressure bar is fixed on the second fastener while the other end fixed on the assistant device. Therefore, when the air pressure bar is operated, smooth sliding of the air pressure bar is provided, whereby the structural strength of the table is reinforced.
摘要翻译：高度可调节的桌子包括台板，第一脚，第二脚，气压杆和辅助装置。第一脚与第二脚交叉并枢转地连接，其中第一脚的一端与台板的底侧上的第一紧固件枢转连接，并且第二脚的一端与枢转接头枢转连接。辅助装置固定在第一紧固件和第二紧固件之间，其中空气压力杆的一端固定在第二紧固件上，而另一端固定在辅助装置上。因此，当气压杆操作时，提供气压棒的平滑滑动，从而增强了工作台的结构强度。

8. 发明授权

US08624918B2 Electronic reader and control method thereof 有权
标题翻译：电子阅读器及其控制方法
公开(公告)号：US08624918B2
公开(公告)日：2014-01-07
申请号：US13172829
申请日：2011-06-30
申请人： Hui-Ling Huang , Xiao-Guang Li
发明人： Hui-Ling Huang , Xiao-Guang Li
IPC分类号： G09G5/00
CPC分类号： G09B5/02
摘要： An electronic reader which includes a storage unit, and an input unit generating signals in response to user input. In addition, a processing unit detects the signals corresponding to the user input; controls the electronic reader to enter a reading mode, and displays a file according to the user input, records a length of duration time for which the electronic reader operates in the reading mode; determines the duration time and executes a variety of protective instructions and steps depending on the length of duration time for which the electronic reader operates in the reading mode. A control method is also provided.
摘要翻译：一种包括存储单元的电子阅读器和响应于用户输入产生信号的输入单元。此外，处理单元检测与用户输入相对应的信号; 控制电子阅读器进入读取模式，并根据用户输入显示文件，记录电子阅读器在阅读模式下操作的持续时间长度; 确定持续时间，并根据电子读取器在读取模式下操作的持续时间的长度执行各种保护指令和步骤。还提供了一种控制方法。

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