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1. 发明申请

US20220223216A1 ROBUSTNESS-AWARE NAND FLASH MANAGEMENT 有权
公开(公告)号：US20220223216A1
公开(公告)日：2022-07-14
申请号：US17147539
申请日：2021-01-13
申请人： Innogrit Technologies Co., Ltd.
发明人： Gang ZHAO , Lin Chen , Jie CHEN , Qun Zhao
IPC分类号： G11C16/34 , G11C16/16 , G11C16/26 , G06F12/02
摘要： Systems, apparatus and methods are provided for performing program operations in a non-volatile storage system. In one embodiment, there is provided a method that may comprise categorizing active storage blocks of a non-volatile storage device into a robust group and a less-robust group based on a number of factors including page error count, program time and number of Program/Erase (P/E) cycles; determining that a cache program operation needs to be performed; selecting a first storage block from the robust group to perform the cache program operation; determining that a regular program operation needs to be performed; and selecting a second storage block from the less-robust group to perform the regular program operation.

2. 发明授权

US11385698B1 Voltage drop management for VLSI and SoC 有权
公开(公告)号：US11385698B1
公开(公告)日：2022-07-12
申请号：US17137865
申请日：2020-12-30
申请人： Innogrit Technologies Co., Ltd.
发明人： Gang Zhao , Lin Chen , Zhengtian Feng , Qun Zhao
IPC分类号： G06F1/30 , G06F3/06
摘要： Apparatus and methods are provided for managing voltage drops on a semiconductor chip. One exemplary embodiment according to the present disclosure may provide a method for managing voltage drops in a semiconductor chip. The method may comprise monitoring power supply voltages for different voltage domains in the semiconductor chip by a voltage drop detection circuit, determining that a voltage drop event has occurred based on voltage information and duration information associated with the voltage drop event reported from the voltage drop detection circuit, generating diagnostic information that includes whether the voltage drop event is an external event or an internal event determined based on the voltage information and timing information reported from the voltage drop detection circuit, and taking an action based on the diagnosis information.

3. 发明申请

US20220206553A1 VOLTAGE DROP MANAGEMENT FOR VLSI AND SOC 有权
公开(公告)号：US20220206553A1
公开(公告)日：2022-06-30
申请号：US17137865
申请日：2020-12-30
申请人： Innogrit Technologies Co., Ltd.
发明人： Gang Zhao , Lin Chen , Zhengtian Feng , Qun Zhao
IPC分类号： G06F1/30 , G06F3/06
摘要： Apparatus and methods are provided for managing voltage drops on a semiconductor chip. One exemplary embodiment according to the present disclosure may provide a method for managing voltage drops in a semiconductor chip. The method may comprise monitoring power supply voltages for different voltage domains in the semiconductor chip by a voltage drop detection circuit, determining that a voltage drop event has occurred based on voltage information and duration information associated with the voltage drop event reported from the voltage drop detection circuit, generating diagnostic information that includes whether the voltage drop event is an external event or an internal event determined based on the voltage information and timing information reported from the voltage drop detection circuit, and taking an action based on the diagnosis information.

4. 发明申请

US20230005554A1 ROBUSTNESS-AWARE NAND FLASH MANAGEMENT 有权
公开(公告)号：US20230005554A1
公开(公告)日：2023-01-05
申请号：US17903390
申请日：2022-09-06
申请人： Innogrit Technologies Co., Ltd.
发明人： Gang ZHAO , Lin Chen , Jie CHEN , Qun Zhao
IPC分类号： G11C16/34 , G06F12/02 , G11C16/10 , G11C16/16 , G11C16/26
摘要： Systems, apparatus and methods are provided for performing program operations in a non-volatile storage system. In one embodiment, there is provided a method that may comprise categorizing active storage blocks of a non-volatile storage device into a robust group and a less-robust group based on a number of factors including page error count, program time and number of Program/Erase (P/E) cycles; determining that a cache program operation needs to be performed; selecting a first storage block from the robust group to perform the cache program operation; determining that a regular program operation needs to be performed; and selecting a second storage block from the less-robust group to perform the regular program operation.

5. 发明授权

US11494117B2 Method and system for data processing 有权
公开(公告)号：US11494117B2
公开(公告)日：2022-11-08
申请号：US16746844
申请日：2020-01-18
申请人： INNOGRIT TECHNOLOGIES CO., LTD.
发明人： Ying Chu , Wei Chou , Qian Cheng , Cheng-Yun Hsu , Qun Zhao
IPC分类号： G06F3/06 , G06F16/2455 , G06F16/23
摘要： A method for data processing, comprising updating intermediate storage information according to data to be processed and address information of the data to be processed in a first storage space, until the intermediate storage information has reached a preset size; and performing, in the first storage space, an operation corresponding to the data to be processed using the intermediate storage information, when the intermediate storage information reaches the preset size. By the above method, the computing cost for performing an operation corresponding to the data to be processed in the first storage space can be reduced, the efficiency in performing the corresponding operation can be improved, and with intermediate storage information adapted to the first storage spaces of different sizes, the number of operations on the first storage spaces can be reduced.

6. 发明授权

US11488678B2 Grouping flash storage blocks based on robustness for cache program operations and regular program operations 有权
公开(公告)号：US11488678B2
公开(公告)日：2022-11-01
申请号：US17147539
申请日：2021-01-13
申请人： Innogrit Technologies Co., Ltd.
发明人： Gang Zhao , Lin Chen , Jie Chen , Qun Zhao
IPC分类号： G11C16/14 , G11C16/34 , G06F12/02 , G11C16/10 , G11C16/16 , G11C16/26
摘要： Systems, apparatus and methods are provided for performing program operations in a non-volatile storage system. In one embodiment, there is provided a method that may comprise categorizing active storage blocks of a non-volatile storage device into a robust group and a less-robust group based on a number of factors including page error count, program time and number of Program/Erase (P/E) cycles; determining that a cache program operation needs to be performed; selecting a first storage block from the robust group to perform the cache program operation; determining that a regular program operation needs to be performed; and selecting a second storage block from the less-robust group to perform the regular program operation.

7. 发明授权

US11188263B2 Method of writing data to a storage device using aggregated queues 有权
公开(公告)号：US11188263B2
公开(公告)日：2021-11-30
申请号：US16746845
申请日：2020-01-18
申请人： INNOGRIT TECHNOLOGIES CO., LTD.
发明人： Lei Li , Ying Chu , Qian Cheng , Qun Zhao
IPC分类号： G06F3/06
摘要： The present disclosure relates to a method for data writing, a device and a storage medium, wherein the method includes acquiring a first data to be written and saving a plurality of sub-blocks of the first data in one or more designated aggregated queue of multiple aggregated queues according to an aggregation strategy; performing, in each designated aggregated queue, data interception on a plurality of sub-blocks in a current queue to obtain a second data to be written; and writing the second data in a storage device. The data distribution written in the storage device becomes more ideal by a multi-queue aggregation, and thus the method for data writing according to the embodiments of the present disclosure can reduce the time consumed in reading the storage device effectively.

8. 发明授权

US11188245B2 Data storage device, system, and data writing method 有权
公开(公告)号：US11188245B2
公开(公告)日：2021-11-30
申请号：US16746842
申请日：2020-01-18
申请人： INNOGRIT TECHNOLOGIES CO., LTD.
发明人： Hui Wen , Qun Zhao , Qian Cheng , Ying Chu , Cheng-Yun Hsu
IPC分类号： G06F12/00 , G06F3/06
摘要： The present disclosure relates to a data storage device, system, and a data writing method. The device comprises a controller and a plurality of storage blocks, each storage block consisting of an idle storage block and a non-idle storage block, the controller connecting to each storage block respectively, wherein the controller is configured to generate, when receiving a data writing command, a self-adapting adjustment instruction according to a comparison between a storage distribution state of the storage block and a first threshold value to configure the idle-storage block as an SLC block or an XLC block; the storage block is configured to correspondingly adjust the storage distribution state according to the self-adapting adjustment instruction to store written data in the SLC block or the XLC block of the idle storage block. By dynamically configuring the storage blocks as an SLC block or an XLC block according to the storage distribution state, the data storage device, system, and the data writing method according to the embodiments of the present disclosure is capable of maintaining the reading/writing performance of the storage device for a relatively long period.

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